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Diodes Incorporated BSS123W-7-F MOSFET N-CH 100V 170MA SOT323
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BSS123W-7-F	Reel	393,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.05786	Buy Now
Avnet Americas	BSS123W-7-F	Reel	3,000	8 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.03229	Buy Now
Mouser Electronics	BSS123W-7-F		23,929			1 $0.28 10 $0.179 100 $0.079 1000 $0.072 10000 $0.063	Buy Now
Arrow Electronics	BSS123W-7-F		24,000	8 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.043	Buy Now
Newark	BSS123W-7-F	Cut Tape	3,515		5	1 $0.247 10 $0.172 100 $0.118 1000 $0.083 10000 $0.083	Buy Now

RS	BSS123W-7-F	Bulk			100	1 - 10 - 100 $0.156 1000 $0.156 10000 $0.156	Get Quote
Bristol Electronics	BSS123W-7-F		1,264			1 - 10 - 100 - 1000 - 10000 -	Get Quote
	BSS123W-7-F		860			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Asia	BSS123W-7-F			12 Weeks	9,000	1 - 10 - 100 - 1000 - 10000 $0.04421	Buy Now
Avnet Silica	BSS123W-7-F		690,000	10 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
New Advantage Corporation	BSS123W-7-F		363,000		1	1 - 10 - 100 - 1000 - 10000 $0.051	Buy Now
Win Source Electronics	BSS123W-7-F		327,000			1 - 10 - 100 - 1000 - 10000 $0.0259	Buy Now
Diodes Incorporated BSS123WQ-7-F MOSFET N-CH 100V 170MA SOT323
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BSS123WQ-7-F	Reel	117,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.05512	Buy Now
Mouser Electronics	BSS123WQ-7-F		102,492			1 $0.22 10 $0.147 100 $0.065 1000 $0.058 10000 $0.038	Buy Now
Newark	BSS123WQ-7-F	Cut Tape	3,385		5	1 $0.196 10 $0.139 100 $0.096 1000 $0.075 10000 $0.075	Buy Now
Avnet Asia	BSS123WQ-7-F			8 Weeks	9,000	1 - 10 - 100 - 1000 - 10000 $0.03524	Buy Now
Avnet Silica	BSS123WQ-7-F		333,000	10 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

New Advantage Corporation	BSS123WQ-7-F		12,000		1	1 - 10 - 100 - 1000 - 10000 $0.0451	Buy Now
Win Source Electronics	BSS123WQ-7-F		192,737			1 - 10 - 100 - 1000 $0.0564 10000 $0.0437	Buy Now
PanJit Group BSS123_R1_00001 SOT-23, MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BSS123_R1_00001	Digi-Reel	21,358		1	1 $0.2 10 $0.119 100 $0.2 1000 $0.04724 10000 $0.04724	Buy Now
	BSS123_R1_00001	Reel	21,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.03896	Buy Now
Chip One Stop	BSS123_R1_00001	Cut Tape	3,000			1 - 10 - 100 $0.0441 1000 $0.0373 10000 $0.0297	Buy Now
Suzhou Good-Ark Electronics Co Ltd BSS123 MOSFET, N-CH, SINGLE, 0.19A, 100
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BSS123	Reel	15,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.0302	Buy Now
Diodes Incorporated BSS123Q-13 BSS FAMILY SOT23 T&R 10K
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BSS123Q-13	Reel	10,000		10,000	1 - 10 - 100 - 1000 - 10000 $0.03672	Buy Now
Newark	BSS123Q-13	Cut Tape	2,665		5	1 $0.162 10 $0.111 100 $0.075 1000 $0.054 10000 $0.054	Buy Now
TME	BSS123Q-13				1	1 $0.2351 10 $0.1644 100 $0.0811 1000 $0.0429 10000 $0.034	Get Quote
Avnet Asia	BSS123Q-13		10,000	8 Weeks	10,000	1 - 10 - 100 - 1000 - 10000 $0.03465	Buy Now
Avnet Silica	BSS123Q-13		860,000	10 Weeks	10,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

Chip Stock	BSS123Q-13		60,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
New Advantage Corporation	BSS123Q-13		130,000		1	1 - 10 - 100 - 1000 - 10000 $0.0408	Buy Now

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BSS12 Datasheets (155)

Part	Manufacturer	Description	Datasheet Type	PDF
BSS12	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
BSS12	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
BSS12	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF
BSS12	Unknown	Transistor Replacements	Scan	PDF
BSS123	Diodes	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR	Original	PDF
BSS123	Diodes	N-CHANNEL ENHANCEMENT MODE MOSFET	Original	PDF
BSS123	Fairchild Semiconductor	TRANS MOSFET N-CH 100V 0.17A 3SOT-23 T/R	Original	PDF
BSS123	Fairchild Semiconductor	N-Channel Logic Level Enhancement Mode Field Effect Transistor	Original	PDF
BSS123	Fairchild Semiconductor	N-Channel Logic Level Enhancement Mode Field Effect Transistor	Original	PDF
BSS123	Fairchild Semiconductor	N-Channel Logic Level Enhancement Mode Field Effect Transistor	Original	PDF
BSS123	Infineon Technologies	SIPMOS Small-Signal Transistor	Original	PDF
BSS123	Infineon Technologies	N-Channel Small Signal MOSFETs (20V - 800V); Package: PG-SOT23-3; Package: SOT-23; V_DS (max): 100.0 V; R_{DS (on)} (max) (@10V): 6,000.0 mOhm; R_{DS (on)} (max) (@4.5V): 10,000.0 mOhm; R_{DS (on)} (max) (@2.5V): -;	Original	PDF
BSS123	Philips Semiconductors	N-Channel Logic Level Enhancement Mode Field Effect Transistor	Original	PDF
BSS123	Philips Semiconductors	N-Channel Enhancement Mode Vertical D-MOS Transistor	Original	PDF

BSS123	Siemens	SIPMOS Small-Signal Transistor	Original	PDF
BSS123	Siemens	SIPMOS Small-Signal Transistor	Original	PDF
BSS123	Siemens		Original	PDF
BSS123	Siemens	SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level)	Original	PDF
BSS123	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
BSS123	Weitron	Power MOSFET N-Channel	Original	PDF

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BSS12 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
BSS123LT1G Abstract: No abstract text available Text: BSS123LT1G, BVSS123LT1G Power MOSFET 170 mAmps, 100 Volts N−Channel SOT−23 http://onsemi.com 170 mAMPS 100 VOLTS RDS on = 6 W Features • AEC−Q101 Qualified and PPAP Capable − BVSS123LT1G • These Devices are Pb−Free and are RoHS Compliant N−Channel	Original	BSS123LT1G, BVSS123LT1G OT-23 AEC-Q101 BVSS123LT1G BSS123LT1/D BSS123LT1G	PDF
BSS123W-7-F Abstract: BSS123W BSS123W-7 J-STD-020A Text: BSS123W N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT SPICE MODELS: BSS123W Features • · · · · · Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating Also Available in Lead Free Version	Original	BSS123W OT-323 OT-323, J-STD-020A MIL-STD-202, com/datasheets/ap02007 BSS123W-7-F. DS30368 BSS123W-7-F BSS123W BSS123W-7 J-STD-020A	PDF
BSS123 Abstract: SAs sot23 BSS123 L6433 L6327 PG-SOT23 PG-SOT-23 Text: BSS123 Rev. 1.41 SIPMOS Small-Signal-Transistor Feature Product Summary • N-Channel VDS • Enhancement mode RDS on • Logic Level ID • dv/dt rated 100 V 6 Ω 0.17 A PG-SOT23 3 Drain pin 3 • Qualified according to AEC Q101 Gate pin1 2 Source pin 2	Original	BSS123 PG-SOT23 VPS05161 L6327: L6433: BSS123 SAs sot23 BSS123 L6433 L6327 PG-SOT23 PG-SOT-23	PDF
DS30366 Abstract: K23 SOT23 BSS123 BSS123-7-F BSS123A BSS123 spice Text: SPICE MODEL: BSS123 BSS123 NEW PRODUCT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · · Low Gate Threshold Voltage SOT-23 Low Input Capacitance Min Max A 0.37 0.51 B 1.20 1.40 C 2.30 2.50 D 0.89 1.03 G E 0.45 0.60 H G 1.78 2.05	Original	BSS123 OT-23 DS30366 K23 SOT23 BSS123 BSS123-7-F BSS123A BSS123 spice	PDF
SOT-23 marking 717 Abstract: SAP SOT23 sot-23 MARKING CODE 718 Text: BSS123 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) Order Number / Package Product marking for TO-236AB: TO-236AB* SA❋ 100V 6.0Ω 0.5A BSS123 where ❋ = 2-week alpha date code *Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.	Original	BSS123 O-236AB: O-236AB* OT-23. SOT-23 marking 717 SAP SOT23 sot-23 MARKING CODE 718	PDF
BSS123W Abstract: BSS123W-7 J-STD-020A Text: BSS123W NEW PRODUCT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating · · · · · Dim Min Max A 0.25	Original	BSS123W OT-323, J-STD-020A MIL-STD-202, BSS123W-7 OT-323 3000/Tape com/datasheets/ap02007 DS30368 BSS123W BSS123W-7 J-STD-020A	PDF
BSS123Q-13 Abstract: DS30366 bss123 c23 K23 SOT23 K23 mOSFET BSS123Q-7 Text: BSS123 N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V BR DSS RDS(ON) ID TA = 25°C 100V 6.0Ω @ VGS = 10V 0.17 • • • • • • • Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating	Original	BSS123 DS30366 BSS123Q-13 bss123 c23 K23 SOT23 K23 mOSFET BSS123Q-7	PDF
marking code SA sot-23 Abstract: SOT-23 marking sa BSS123LT1 DIODE 8V SOT-23 SOT-23 9v Text: BSS123LT1 Preferred Device Power MOSFET 170 mAmps, 100 Volts N−Channel SOT−23 MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDSS 100 Vdc Gate−Source Voltage − Continuous − Non−repetitive tp ≤ 50 µs VGS VGSM ± 20 ± 40 Vdc	Original	BSS123LT1 OT-23 marking code SA sot-23 SOT-23 marking sa BSS123LT1 DIODE 8V SOT-23 SOT-23 9v	PDF
2410l Abstract: ND2406 ND2410L BSS129 ND2406L 2410* mosfet nd2410 Text: ND2406L/2410L, BSS129 N-Channel Depletion-Mode MOSFET Transistors Product Summary Part Number V BR DSV Min (V) ND2406L rDS(on) Max (W) VGS(off) (V) ID (A) 6 –1.5 to –4.5 0.23 10 –0.5 to –2.5 0.18 20 –0.7 (min) 0.15 240 ND2410L BSS129 230 Features	Original	ND2406L/2410L, BSS129 ND2406L ND2410L O-226AA O-226AA) S-52426--Rev. 14-Apr-97 2410l ND2406 ND2410L BSS129 ND2406L 2410* mosfet nd2410	PDF
D8145 Abstract: BSS126 L6327 PG-SOT23 PG-SOT-23 Text: BSS126 SIPMOS Small-Signal-Transistor Product Summary Features • N-channel • Depletion mode V DS 600 V R DS on ,max 700 Ω I DSS,min 0.007 A • dv /dt rated • Available with VGS(th) indicator on reel • Pb-free lead plating; RoHS compliant PG-SOT-23	Original	BSS126 PG-SOT-23 L6327: L6906: D8145 BSS126 L6327 PG-SOT23 PG-SOT-23	PDF
SOT23 K23 Abstract: K23 SOT23 MARKING Text: BSS123 NEW PRODUCT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating SOT-23 Max 0.37 0.51 B 1.20 1.40 C	Original	BSS123 OT-23 OT-23, J-STD-020A MIL-STD-202, BSS123-7 3000/Tape com/datasheets/ap02007 DS30366 SOT23 K23 K23 SOT23 MARKING	PDF
Untitled Abstract: No abstract text available Text: BSS123 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT SPICE MODEL: BSS123 Features • · · · · Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating SOT-23 A · ·	Original	BSS123 OT-23 OT-23, J-STD-020A MIL-STD-202, BSS123-7 3000/Tape com/datasheets/ap02007	PDF
D001A Abstract: F0016 Text: Type BSS127 SIPMOS Small-Signal-Transistor Product Summary Feature • n-channel • enhancement mode V DS 600 V R DS on ,max 500 Ω 0.023 A ID • Logic level • dv /dt rated • Pb-free lead plating, RoHS compliant PG-SOT23 Type Package Ordering Code	Original	BSS127 PG-SOT23 Q67045-A5014 E6327: 3000PCS/reel D001A F0016	PDF
D001A Abstract: F0016 Text: Type BSS127 SIPMOS Small-Signal-Transistor Product Summary Features • n-channel • enhancement mode V DS 600 V R DS on ,max 500 Ω 0.021 A ID • Logic level (4.5V rated) • dv /dt rated PG-SOT-23 • 100%lead-free; RoHS compliant • Qualified according to AEC Q101	Original	BSS127 IEC61249-2-21 PG-SOT-23 H6327: 3000PCS/reel D001A F0016	PDF

FDC6331 Abstract: fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305 Text: Discrete Temperature range Software version Revision date 2N7002 SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A 2N7002MTF SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A BS170 TO-92-3 Electrical 25°C to 125°C Orcad 9.1 Mar 22, 2002 BSS123 SOT-23-3	Original	2N7002 2N7002MTF BS170 BSS123 BSS138 BSS84 FDB045AN08A0 FDB2532 FDB3632 FDB3652 FDC6331 fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305	PDF
K23 mOSFET Abstract: No abstract text available Text: BSS123 N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V BR DSS RDS(ON) ID TA = 25°C 100V 6.0Ω @ VGS = 10V 0.17 • • • • • • • Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating	Original	BSS123 DS30366 K23 mOSFET	PDF
BSS123Q-7-F Abstract: MARKING CODE 028a sot 23 Text: BSS123 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR ADVANCE INFORMATION Product Summary Features and Benefits V BR DSS RDS(ON) ID TA = 25°C 100V 6.0Ω @ VGS = 10V 0.17 • • • • • • • Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed	Original	BSS123 DS30366 BSS123Q-7-F MARKING CODE 028a sot 23	PDF
bss123 sot23 Abstract: alternative bss123 Text: Obsolete. Alternative is BSS123. SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BSS123A ISSUE 4 – APRIL 1998 FEATURES * BVDSS = 100V * Low Threshold S D PARTMARKING DETAIL – SAA G ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage	Original	BSS123. BSS123A 280mA 170mA 100mA bss123 sot23 alternative bss123	PDF
TR40-10 Abstract: SA SOT-23 MARKING CODE 028a sot 23 Q62702-SS12 Text: BEE D • û23b32G 0017155 5 « S I P SIPMOS N Channel MOSFET SIEMEN S/ SPCL-, SEMICONDS t * " 3 S *- 2S " BSS123 _ ~_ • SIPMOS - enhancement mode • Draln-source voltage Vf>« = 100V • Continuous drain current I o - 0.17A • Draln-source on-reslstance	OCR Scan	23b32G BSS123 Q62702-SS12 OQ171bO TR40-10 SA SOT-23 MARKING CODE 028a sot 23 Q62702-SS12	PDF
VP1304N2 Abstract: TP2540ND VN1304N3 VP3203N3 LND150N8 VN3205N5 VN1310N3 TN2510N8 TN0102N2 VP1306N2 Text: _ _ fflpSupertex inc. Device Page # Device Page # Device A lp h a n u m e ric Index Page # Device Page# 2N7002 BSS123 DN2535N2 DN2535N3 DN2535N5 20 24 28 28 28 TN2106K1 TN2106N3 TN2124K1 TN2501N8 TN2501ND 57 57 61 63 63 TP2504ND TP2506ND TP2510N8 TP2510ND	OCR Scan	2N7002 BSS123 DN2535N2 DN2535N3 DN2535N5 DN2535ND DN2540N2 DN2540N3 DN2540N5 DN2540N8 VP1304N2 TP2540ND VN1304N3 VP3203N3 LND150N8 VN3205N5 VN1310N3 TN2510N8 TN0102N2 VP1306N2	PDF
Untitled Abstract: No abstract text available Text: BSS123LT1* CASE 318-07, STYLE 21 SOT-23 TO-236AB M AXIM UM RATINGS Rating D r a in - S o u r c e V o lta g e G a t e - S o u r c e V o lta g e Symbol Value Unit VDSS 100 Vdc s r 35 Vdc 'd m 0 .1 7 0 .6 8 Sym bol Max Pd 225 mW 1.8 m W -'C r w a 556 c w T j . T s tq	OCR Scan	BSS123LT1* OT-23 O-236AB)	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor BSS123LT1 N -C h an n el 3 DRAIN Motorola Preferred Device % 2 SOURCE 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain-Source Voltage VDSS 100 Vdc G ate-Source Voltage — Continuous — N on-repetitive tp < 50 ^s	OCR Scan	BSS123LT1 OT-23 O-236AB)	PDF
C086 Abstract: f 0472 N-Channel MOSFET Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA BSS123 Advance Information S m all-S ig n al Field E ffe c t T ran sisto r N-Channel Enhancement-Mode Silicon Gate TMOS N -C H A N N E L S M A L L -S IG N A L T M O S FET rD S o n l = 6 O H M S 100 V O L T S This TM O S FET is designed fo r h ig h -vo ltag e , h ig h	OCR Scan	BSS123 OT-23 O-236AA) C0034 C086 f 0472 N-Channel MOSFET	PDF
transistor 45 f 123 Abstract: No abstract text available Text: c m p r M - iii n SEM IC ONDUCTO R September 1996 tm BSS100 / BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary,	OCR Scan	BSS100 BSS123 BSS100: BSS123: BSS123 transistor 45 f 123	PDF

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BSS12 Price and Stock

Diodes Incorporated BSS123W-7-F

Diodes Incorporated BSS123WQ-7-F

PanJit Group BSS123_R1_00001

Suzhou Good-Ark Electronics Co Ltd BSS123

Diodes Incorporated BSS123Q-13

BSS12 Datasheets (155)

BSS12 Datasheets Context Search

BSS123LT1G

BSS123W-7-F

BSS123

DS30366

SOT-23 marking 717

BSS123W

BSS123Q-13

marking code SA sot-23

2410l

D8145

SOT23 K23

Untitled

D001A

D001A

FDC6331

K23 mOSFET

BSS123Q-7-F

bss123 sot23

TR40-10

VP1304N2

Untitled

Untitled

C086

transistor 45 f 123