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    onsemi BSS138

    MOSFET N-CH 50V 220MA SOT23-3
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    Newark BSS138 Reel 51,000 3,000
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    Future Electronics BSS138 Reel 7,287,000 3,000
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    Onlinecomponents.com BSS138 54,000
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    BSS138 576
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    Rochester Electronics BSS138 8,954 1
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    Ameya Holding Limited BSS138 556,039
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    New Advantage Corporation BSS138 9,738,000 1
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    AnBon Semi BSS138

    N-CHANNEL ENHANCEMENT MODE MOSFE
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    DigiKey BSS138 Digi-Reel 161,586 1
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    BSS138 Reel 161,484 3,000
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    Suzhou Good-Ark Electronics Co Ltd BSS138

    MOSFET, N-CH, SINGLE, 0.22A, 50V
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    DigiKey BSS138 Cut Tape 49,137 1
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    UMW BSS138

    MOSFET N-CH 50V 220MA SOT23
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    DigiKey BSS138 Digi-Reel 2,780 1
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    SLKOR BSS138

    50V 220MA 3.5@10V,220MA 225MW N
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    BSS138 Datasheets (132)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BSS138 Chino-Excel Technology N-Channel Enhancement Mode Field Effect Transistor Original PDF
    BSS138 Diodes TRANS MOSFET N-CH 50V 0.2A 3SOT-23 Original PDF
    BSS138 Diodes MOSFET N-CH, 200MA Original PDF
    BSS138 Diodes N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Original PDF
    BSS138 Fairchild Semiconductor TRANS MOSFET N-CH 50V 0.22A 3SOT-23 T/R Original PDF
    BSS138 Fairchild Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF
    BSS138 General Semiconductor MOSFET, Enhancement, N Channel, 50V, SOT-23, 3-Pin Original PDF
    BSS138 Infineon Technologies N-Channel SIPMOS Small-Signal Transistor Original PDF
    BSS138 Kexin N-Channel Enhancement Mode MOSFET Original PDF
    BSS138 On Semiconductor Power MOSFET 200 mAmps, 50 Volts Original PDF
    BSS138 Philips Semiconductors N-Channel Enhancement Mode Vertical D-MOS FET Original PDF
    BSS138 Siemens Original PDF
    BSS138 Siemens SIPMOS Small-Signal Transistor Original PDF
    BSS138 Siemens SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level) Original PDF
    BSS138 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    BSS138 TY Semiconductor N-Channel Enhancement Mode MOSFET - SOT-23 Original PDF
    BSS138 Weitron Small Signal MOSFET N-Channel Original PDF
    BSS138 Zetex Semiconductors SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET Original PDF
    BSS138 Calogic N-ChanneI Enhancement Mode Vertical DMOS FET Scan PDF
    BSS138 Chino-Excel Technology N-Channel Enhancement Mode Field Effect Transistor Scan PDF
    ...

    BSS138 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BSS138PW

    Abstract: TRANSISTOR SMD CODE PACKAGE SOT323
    Text: BSS138PW 60 V, 320 mA N-channel Trench MOSFET Rev. 1 — 2 November 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using


    Original
    PDF BSS138PW OT323 SC-70) AEC-Q101 771-BSS138PW115 BSS138PW TRANSISTOR SMD CODE PACKAGE SOT323

    bss138

    Abstract: bss138 MARKING BSS138 SS all diodes ratings DMOS FET marking code SS SOT23 BSS138TA marking ss BSS138/BSS100 TO-92
    Text: A Product Line of Diodes Incorporated BSS138 50V N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET IN SOT23 Features and Benefits Mechanical Data • • • • • • • • BVDSS > 50V RDS on ≤ 3.5Ω @ VGS= 5V Maximum continuous drain current ID = 200mA


    Original
    PDF BSS138 200mA AEC-Q101 OT-23 J-STD-020 MIL-STD-202, OT-23 DS35479 bss138 bss138 MARKING BSS138 SS all diodes ratings DMOS FET marking code SS SOT23 BSS138TA marking ss BSS138/BSS100 TO-92

    bss138 MARKING

    Abstract: bss138 k38 bss138 MARKING c38 BSS138 BSS138Q BSS138 equivalent BSS138Q-7-F marking k38 K38 mosfet
    Text: BSS138 N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant Note 1


    Original
    PDF BSS138 AEC-Q101 J-STD-020 MIL-STD-202, DS30144 bss138 MARKING bss138 k38 bss138 MARKING c38 BSS138 BSS138Q BSS138 equivalent BSS138Q-7-F marking k38 K38 mosfet

    Untitled

    Abstract: No abstract text available
    Text: MOSFET SMD Type Product specification BSS138 • Features SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ● VDS V = 50V +0.1 1.3-0.1 +0.1 2.4-0.1 ● RDS(ON) ≤ 3.5Ω (VGS = 10V) 0.4 3 ● ID = 0.22 A 1 0.55 ● RDS(ON) ≤ 6Ω (VGS = 4.5V) 2 +0.1 0.95-0.1


    Original
    PDF BSS138 OT-23

    BSS138LT1G

    Abstract: BSS138LT1 BSS138LT3 BSS138LT3G
    Text: BSS138LT1 Preferred Device Power MOSFET 200 mA, 50 V N−Channel SOT−23 Typical applications are DC−DC converters, power management in portable and battery−powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.


    Original
    PDF BSS138LT1 OT-23 OT-23 BSS138LT1/D BSS138LT1G BSS138LT1 BSS138LT3 BSS138LT3G

    Untitled

    Abstract: No abstract text available
    Text: BSS138W N-Channel POWER MOSFET 3 DRAIN P b Lead Pb -Free 3 1 2 1 GATE Description: * Typical applications are dc–dc converters, power management in portable and battery–powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.


    Original
    PDF BSS138W OT-323 SC-70) 10-Apr-07 OT-323

    BSS138W

    Abstract: BSS138W-7 J-STD-020A marking k38 sot-323
    Text: BSS138W N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed A B C G Mechanical Data · · · · · · · · SOT-323 D Case: SOT-323, Molded Plastic


    Original
    PDF BSS138W OT-323 OT-323, J-STD-020A MIL-STD-202, DS30206 BSS138W BSS138W-7 J-STD-020A marking k38 sot-323

    marking code ss

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# BSS138 Features • • • • • • • N-Channel Enhancement Mode High dense cell design for extremely low RDS ON


    Original
    PDF BSS138 OT-23 OT-23 marking code ss

    Untitled

    Abstract: No abstract text available
    Text: BSS138 Small Signal MOSFET N-Channel 3 DRAIN * “G” Lead Pb -Free Features: SOT-23 3 1 *Low On-Resistance : 3.5 Ω *Low Input Capacitance: 40PF *Low Out put Capacitance : 12PF *Low Threshole :1 .5V *Fast Switching Speed : 20ns GATE 1 2 2 SOURCE Application:


    Original
    PDF BSS138 OT-23

    SOT23 marking skS

    Abstract: Q67042-S4184 diode sot-23 marking AG SKs SOT23 D023 BSS138N SKs 83 SKs TRANSISTOR E6327 marking code SKs
    Text: BSS138N SIPMOS Small-Signal-Transistor Product Summary Features • N-channel • Enhancement mode V DS 60 V R DS on ,max 3.5 Ω ID 0.23 A • Logic level • dv /dt rated SOT-23 Type Package Ordering Code Tape and Reel Information Marking BSS138N SOT-23


    Original
    PDF BSS138N OT-23 Q67042-S4184 E6327: Q67042-S4190 E6433: SOT23 marking skS Q67042-S4184 diode sot-23 marking AG SKs SOT23 D023 BSS138N SKs 83 SKs TRANSISTOR E6327 marking code SKs

    marking code ss

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# BSS138 Features • • • • • • • • N-Channel Enhancement Mode Halogen free available upon request by adding suffix "-HF"


    Original
    PDF BSS138 OT-23 OT-23 marking code ss

    bss138 MARKING

    Abstract: BSS138
    Text: BSS138 GENERAL FEATURES ● VDS = 50V,ID = 0.22A RDS ON < 6Ω @ VGS=4.5V RDS(ON) < 3.5Ω @ VGS=10V ESD Rating:1000V HBM ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Schematic diagram APPLICATION


    Original
    PDF BSS138 Rating1000V OT-23 OT-23 180mm 25unless bss138 MARKING BSS138

    Untitled

    Abstract: No abstract text available
    Text: BSS138D N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) 60V 0.25A SOT-23 RDS(ON) ( ) Max D 3.0 @VGS = 10V G 4.0 @VGS = 5V S D FEATURES Super high dense cell design for low RDS(ON). G Rugged and reliable. SOT-23 package. S Pb Free. o ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted)


    Original
    PDF BSS138D OT-23 OT-23

    BSS138

    Abstract: No abstract text available
    Text: BSS138 N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) 50V 0.22A SOT-23 RDS(ON) (Ω) Max D 3.5 @VGS = 10V G 6.0 @VGS = 4.5V S D FEATURES ◆ Super high dense cell design for low RDS(ON). G ◆ Rugged and reliable. ◆ SOT-23 package. S o ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted)


    Original
    PDF BSS138 OT-23 OT-23 BSS138

    transistor bss138

    Abstract: bss138 bss138 MARKING BSS138 SS
    Text: BSS138 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance


    Original
    PDF BSS138 OT-23 transistor bss138 bss138 bss138 MARKING BSS138 SS

    SOT23 marking skS

    Abstract: SKs SOT23 BSS138N marking code SKs Q67042-S4184 BSS138N Q67042-S41 sks 46 SKs TRANSISTOR E6327
    Text: Rev. 2.0 BSS138N SIPMOS Small-Signal-Transistor Feature Product Summary • N-Channel VDS 60 V • Enhancement mode RDS on 3.5 Ω • Logic Level ID 0.23 A • dv/dt rated SOT23 Drain pin 3 Gate pin1 Source pin 2 Type Package Ordering Code Tape and Reel Information


    Original
    PDF BSS138N Q67042-S4184 E6327: Q67042-S4190 E6433: SOT23 marking skS SKs SOT23 BSS138N marking code SKs Q67042-S4184 BSS138N Q67042-S41 sks 46 SKs TRANSISTOR E6327

    BSS138

    Abstract: No abstract text available
    Text: BSS138 50V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES 0.120 3.04 • RDS(ON), [email protected],IDS@100mA=6Ω 0.110(2.80) • Advanced Trench Process Technology 0.006(0.15)MIN. • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), [email protected],IDS@200mA=4Ω


    Original
    PDF BSS138 100mA 500mA 200mA 2002/95/EC OT-23 OT-23 2010-REV BSS138

    Untitled

    Abstract: No abstract text available
    Text: BSS138 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR SPICE MODEL: BSS138 Features • · · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage SOT-23 A D B Mechanical Data · · · ·


    Original
    PDF BSS138 OT-23 OT-23, J-STD-020A MIL-STD-202, DS30144

    K38 SOT-23

    Abstract: marking k38 bss138 k38 TRANSISTOR K38
    Text: BSS138 NEW PRODUCT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage SOT-23 A D TOP VIEW Mechanical Data · · · · ·


    Original
    PDF BSS138 OT-23 OT-23, MIL-STD-202, 250mA -250mA 300ms, DS30144 K38 SOT-23 marking k38 bss138 k38 TRANSISTOR K38

    Untitled

    Abstract: No abstract text available
    Text: SO T3 23 BSS138BKW 60 V, 320 mA N-channel Trench MOSFET Rev. 1 — 12 August 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


    Original
    PDF BSS138BKW OT323 SC-70) AEC-Q101

    PG-SOT-23

    Abstract: marking SKs D023 BSS138N BSS138N L6327 L6327 PG-SOT23 dd1270
    Text: BSS138N SIPMOS Small-Signal-Transistor Product Summary Features • N-channel • Enhancement mode V DS 60 V R DS on ,max 3.5 Ω ID 0.23 A • Logic level • dv /dt rated • Pb-free lead-plating; RoHS compliant PG-SOT-23 Type Package Tape and Reel Marking


    Original
    PDF BSS138N PG-SOT-23 BSS138N PG-SOT-23 L6327: marking SKs D023 BSS138N L6327 L6327 PG-SOT23 dd1270

    0 281 005 023

    Abstract: D023 dd1270 0 281 003 018 0 281 020 023
    Text: BSS138N SIPMOS Small-Signal-Transistor Product Summary Features • N-channel • Enhancement mode V DS 60 V R DS on ,max 3.5 Ω ID 0.23 A • Logic level • dv /dt rated • Pb-free lead-plating; RoHS compliant PG-SOT-23 Type Package Tape and Reel Marking


    Original
    PDF BSS138N PG-SOT-23 BSS138N PG-SOT-23 L6327: L6433: 0 281 005 023 D023 dd1270 0 281 003 018 0 281 020 023

    B5G1

    Abstract: BSS138
    Text: National May 1995 Semiconductor~ BSS138 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Nationals proprietary, high cell density, DMOS technology. These products


    OCR Scan
    PDF BSS138 OT-23 B5G1 BSS138

    Silicon N-Channel Junction FET sot23

    Abstract: bss138 MARKING transistor bss138 BSS138
    Text: Philips Components Data sheet status Preliminary specification date of issue September 1990 FEATURES BSS138 N-channel enhancement mode vertical D-MOS FET PINNING - SOT223 PIN CONFIGURATION • Low threshold voltage • CMOS compatible • Low on-resistance.


    OCR Scan
    PDF BSS138 OT223 MB8160 Silicon N-Channel Junction FET sot23 bss138 MARKING transistor bss138 BSS138