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    BU 450 BDX Search Results

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    ELECTRONIC BALLAST DIAGRAM 400W

    Abstract: ELECTRONIC BALLAST 150 W HID DIAGRAM dimmable HID BALLAST ballast electronic hps electronic ballast mh 400w ELECTRONIC BALLAST DIAGRAM 1000W 61347-1 sodium vapor lamp ballast current characteristics 3.5kw pfc discharge electronic ballast 1000W
    Text: CAT RE-GEN COVER 02:CAT RE-GEN COVER 02 12/03/2010 16:06 Page 32 Europe Headquarters: Venture Lighting Europe Ltd. Trinity Court Batchworth Island Church Street, Rickmansworth, WD3 1RT, United Kingdom + 44 0845-2302222 Fax: +(44) 0845-2302077 [email protected]


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    PDF new44, PO5341 ELECTRONIC BALLAST DIAGRAM 400W ELECTRONIC BALLAST 150 W HID DIAGRAM dimmable HID BALLAST ballast electronic hps electronic ballast mh 400w ELECTRONIC BALLAST DIAGRAM 1000W 61347-1 sodium vapor lamp ballast current characteristics 3.5kw pfc discharge electronic ballast 1000W

    BU 450 bdx

    Abstract: bdx 330 BUX 837 BUX37 BDV65 ESM855 BUV74 bdx 66 bdx 67 BDX65 BUV54
    Text: general purpose darlington selector guide Pp60 — 150 W q guide de sélection darlingtons usage général ^ \ v • CEO 45V 60V ihomsoncsf 80V 100V 120V BDX67 BOX 66 BDX 67 A BDX 66 A BDX 67 B BDX 66 B BDX 67 C BDX 66 C TO-3 BDV67 BDV66 BDV 67 A BDV 66 A


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    PDF BDV67 BDV66 BDV65 BDV64 BDX33 O-220 BDX53 BDX54 T0-220 BU 450 bdx bdx 330 BUX 837 BUX37 ESM855 BUV74 bdx 66 bdx 67 BDX65 BUV54

    Untitled

    Abstract: No abstract text available
    Text: CRIMSON SEM ICO ND UC TO R INC TT ^2514096 CRIMSON SEMIC O N D U C T O R INC J 99D 00339 D dF | ESmOTb . . I P Cf h ~ 0 / M U LTIEPITAXIAL H.V. M E S A AND B IP L A N A R '- TO-3 continued V«o Vcio (V) (V) NPN BUW44 BUW45 BUW46 BUX13 BUX14 BUX43 BUX44 BUX46


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    PDF BUW44 BUW45 BUW46 BUX13 BUX14 BUX43 BUX44 BUX46 BUX47 BUX48

    MJE520

    Abstract: bd189 sc 6038 MJE12007 MOTOROLA 527 33A mj4647 mje13006 BD 433NPNTO-126 Je105 mps-u
    Text: MOTORCLA SC XSTRS/R F 12E D | t3t?5SM aüâ4m ? T | T -9 1 -0 1 Selection By Package Motorola power transistors are available in a wide variety of metal and plastic packages to match thermal, electrical and cost requirements. The following table com pares the basic


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    PDF -204AA -204AE T0-204A 97A-02 O-205AD BUS51 BUV21 BUV11 2N6249 BUX41 MJE520 bd189 sc 6038 MJE12007 MOTOROLA 527 33A mj4647 mje13006 BD 433NPNTO-126 Je105 mps-u

    Untitled

    Abstract: No abstract text available
    Text: TE X A S IN ST R -COPTO! 8 9 0 1 7 2 6 TEXAS INSTR ÎOPTO D 62C 3 6 6 4 9 BUX48, BUX48A N-P-N SILICON POW ER TRANSISTORS ~ r - ? 3 - t a r OCTOBER 1982 - REVISED OCTOBER 1984 • 175 W a t 2 5 ° C C ase Temperature • 15 A Continuous Collector Current •


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    PDF BUX48, BUX48A

    TRANSISTOR BDX

    Abstract: transistor BDX 62 A transistor BU 184 bdx 330 BU800 transistor BDX 65 transistor BU 109 darlington NPN 1000V 8a transistor ESM855 h21e BU 208
    Text: SUPERSWITCH high power transistor M U 86 selector guide guide de sélection transistors grande puissance MU 86 SUPERSWITCH power transistor and darlington for TV applications selector guide guide de sélection transistors de puissance et darlingtons pour applications TV


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    PDF 130CIV 109DP O-220 104DP BUX37 CB-159) BUV54 CB-19 TRANSISTOR BDX transistor BDX 62 A transistor BU 184 bdx 330 BU800 transistor BDX 65 transistor BU 109 darlington NPN 1000V 8a transistor ESM855 h21e BU 208

    U/25/20/TN26/15/850/yd 803 ic

    Abstract: BUX22M JE13005 JE802 TIP+317+data+sheet bu808df1 je200 2n5337 S13003 2N6057
    Text: G E N E R A L P U R P O S E T R A N S IS T O R S TY PE ‘c V CE V CEsat 8 A (V) (V) 'o (A) 'b Rthj-c (mA) rc / w ) V CE0 V CB0 'c (V) (V) (A) 22 22 4 BD433 BD434 50 2.00 1.0 0.50 2.00 200 25 40 5 M JE200 M JE210 70 0.50 1.0 0.30 0.50 50 30 30 3 M JE520


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    PDF BD433 JE200 JE520 D44H1 D44H2 D44C1 D44C2 D44C3 2N6288 BD435 U/25/20/TN26/15/850/yd 803 ic BUX22M JE13005 JE802 TIP+317+data+sheet bu808df1 2n5337 S13003 2N6057

    BUX47A

    Abstract: BUX47 BUX47B BY205-400
    Text: T E X A S I N S T R -COPTO} Ô3&1726 T e x a s b5 instr DE | 0 T b l 7 5 b 003t.b41 fc, D 62C 36641 <o p t o > B U X 4 7, B U X 4 7A , BU X47B N-P-N SILICON POW ER TRANSISTORS 3 3 ' S 3 REVISED OCTOBER 1 9 8 4 125 W at 2 5 ° C Case Temperature 9 A Continuous Collector Current


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    PDF 003bb41 BUX47, BUX47A, BUX47B BUX47 BUX47A BY205-400

    SDT 9202

    Abstract: bdx 338 BU 450 bdx
    Text: ALPHANUMERIC BC 107. .73 BC 108. .73 BC 109. .73 BC 170. .74 BC 171. .74 BC 172. .74 BC 173. .74 BC 174. .74 BC 177. .73 BC 178. .73 BC 179. .73 BC 190. .73 BC 237. .74 BC 238. .74 BC 239. .74 BC 250. .74


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    BU106

    Abstract: 2N5239 2N5240 2N5805 2N5838 2N5840 2N6251 2N6308 2N6510 2n5239 complement
    Text: H IG H -V O LT A G E N-P-N & P-N-P POW ER T Y P E S 1C t o 3 0 A . . •c pm k - 12 A lc = 10A Py = 7 5 • 100W Switching Linear 130 x 130 130 x 1 3 0 1 3 0 x 130 BU 106 2N 5840 [N -P -N ] 2N 5240 [N -P -N ] BU 106 2N 5838 Va o sus =l40V VCER(sus) = 275 V


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    PDF lc-30A 130x130 180x180 210x210 BU106 2N5840 2N5240 2N6510 2N6308 2N5805 BU106 2N5239 2N5240 2N5805 2N5838 2N5840 2N6251 2N6308 2N6510 2n5239 complement

    Untitled

    Abstract: No abstract text available
    Text: TEXAS INSTR {OPTO} Ö 9 6 1 7 2 6 T EX A S D G3 bb b 3 IN S T R 62C O PTO 36663 B IIY Q 3 RI IYQ*5 N-P-N SILICON POWER TRANSISTORS Y - 3 s ~ n OCTOBER 1982 - REVISED OCTOBER 19B4 60 W at 5 0 ° C Case Temperature 6 A Continuous Collector Current 8 A Peak Collector Current


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    HBF4727A

    Abstract: ZD 607 - triac ZD 607 - triac circuit hbf 4727a TDA3310 hbf4727 HBF4740 DTL-930 7-stage frequency divider BF479S
    Text: / h o f t f o f m A T E ^SEMICONDUCTOR “ PRODUCTS 1979/80 I NT RODUCTI ON This publication aims to provide condensed information on the vast range of standard devices currently produced by SGS-ATES. For easy consultation the products have been divided into several sections according to the main product


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    2N6214

    Abstract: BU106 2N5239 2N5240 2N5805 2N5838 2N5840 2N6251 2N6308 2N6510
    Text: HIGH-VOLTAGE N-P-N & P-N-P POWER T Y PE S 1C t o 3 0 A . . •c pm k - 12 A lc = 10A Py = 7 5 • 100W Switching Linear 130 x 130 130 x 1 3 0 1 3 0 x 130 BU 106 2N 5840 [N -P -N ] 2N 5240 [N -P -N ] BU 106 2N 5838 Va o sus =l40V VCER(sus) = 275 V hFE = 2 0 m in .


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    PDF lc-30A 130x130 180x180 210x210 BU106 2N5840 2N5240 2N6510 2N6308 2N5805 2N6214 BU106 2N5239 2N5240 2N5805 2N5838 2N5840 2N6251 2N6308 2N6510

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


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    PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643

    BUX47A

    Abstract: BUX47 BUX47B BY205-400 silicon power transistors T35 ET
    Text: TEXAS IN STR -COPTO} Ô 3Ô 1726 T EX A S TË IN S T R DE | 0 T b l 7 5 b 003t.b41 62C 3 6 6 4 1 <OPTO> BUX47, BUX47A, BUX47B N-P-N SILICON POWER TRANSISTORS 3 3 ' S 3 R E V IS E D O C TO B E R 1 9 8 4 125 W at 2 5 °C Case Temperature 9 A Continuous Collector Current


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    PDF tbl75b BUX47, BUX47A, BUX47B bux47a 1ux47b BUX47 t-35-/s BUX47A BY205-400 silicon power transistors T35 ET

    2N6179

    Abstract: POWER TRANSISTORS 10A 400v pnp BU106 2N3055 RCA 2N2102 BUX17 BUX18 RCA 2N3055 transistor transistor BDX 65 2N5240
    Text: HIGH-VOLTAGE N-P-N & P-N-P POWER T Y PE S 1C t o 3 0 A . . •c pm k - 12 A lc = 10A Py = 7 5 • 100W Switching Linear 130 x 130 130 x 1 3 0 1 3 0 x 130 BU 106 2N 5840 [N -P -N ] 2N 5240 [N -P -N ] BU 106 2N 5838 Va o sus =l40V VCER(sus) = 275 V hFE = 2 0 m in .


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    PDF lc-30A 130x130 180x180 210x210 BU106 2N5840 2N5240 2N6510 2N6308 2N5805 2N6179 POWER TRANSISTORS 10A 400v pnp BU106 2N3055 RCA 2N2102 BUX17 BUX18 RCA 2N3055 transistor transistor BDX 65 2N5240

    357 opto

    Abstract: BUX48 BUX48A BY205-400 npn 1000V 15A
    Text: T EX AS I NS TR -COPTO! ~ tà D E T J f l'ib lT E b 8 9 0 1 7 2 6 TEXAS INSTR ÎOPTO 62C □ □ 3h b 4 36649 BUX48, BUX48A N-P-N SILICON POWER TRANSISTORS ~ r - ? 3 - t a r OCTOBER 1982 - REVISED OCTOBER 1984 • 175 W a t 2 5 ° C C ase Temperature •


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    PDF BUX48, BUX48A BUX48 BUX48A T-33-/S" 357 opto BY205-400 npn 1000V 15A

    RCA 40636 transistor

    Abstract: rca 40636 rca 2N3771 power circuit 40636 rca rca 40327 300W TRANSISTOR AUDIO AMPLIFIER 40636 220v 300w ac regulator circuit 2N3055 RCA 40327
    Text: Ic to 80 A . . . P t to 300 W . . . V cE to 170 V H O M ETAXIAL-BASE N-P-N POWER TYPES le - 16 A max. •260 W max. <e “ 1.6 A max. le a 1 . S A max. lc » 3 .S A max. lc * 4 A m ax. lc a 4 A max. le • 3 A max. le “ 3 A max. le - 7 A max. lc a 1 S A max.


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    PDF ITO-391- ITO-220) O-661â ITO-2201 O-2201 ITO-31 130x130 RCA 40636 transistor rca 40636 rca 2N3771 power circuit 40636 rca rca 40327 300W TRANSISTOR AUDIO AMPLIFIER 40636 220v 300w ac regulator circuit 2N3055 RCA 40327

    RPY 86

    Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
    Text: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ­


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    bux81

    Abstract: BUX80
    Text: TEXAS INSTR {OPTO} 6961726 TE X A S b5 IN S TR DE IflTblTab 003bbS7 □ 62C <OPTO 3Ò657 BUX80, BUX81 N-P-N SILICON POWER TRANSISTORS /- 7 3-/3 O CTO BE R 1 9 8 2 - R EVISED O C T O B E R 198 4 1 5 0 W a t 2 5 ° C C ase T em p eratu re 1 0 A Continuous C ollector C urrent


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    PDF 003bbS7 BUX80 BUX81 BUX80, BUX81 T-33-/3

    BUX83

    Abstract: BUX82 gg3b
    Text: TEX AS INSTR {OPTO} “§ 9 6 1 7 2 6 TEXAS b2 IN STR » riflT h lT E b 62C O P T O QG3bbb3 36663 B IIY Q 3 RI IY Q Q N-P-N SILICON POWER TRANSISTORS O CTO BE R 1 9 8 2 - R EVISED O C T O B E R 198 4 60 W at 5 0 ° C C ase Temperature 6 A Continuous Collector Current


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    PDF BUX82 BUX83 BUX83 gg3b

    diode D45C

    Abstract: JE 800 transistor L146 IC BD800
    Text: STYLE 1: PIN 1. BASE 2. COLLECTOR CASE 340B-03 R e s is tiv e S w itc h in g Ic C o n t Am ps V C E O s u s V o lts M ax M in 8 500 700 f*FE M in /M a x @ lc |XS tf ps Amp M ax M ax M JF16006A 5 min 8 2.5 0.25 5 B U 1008A F 3 min 3 min 4.5 4.5 8* 8* 0.5*


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    PDF 340B-03 JF16006A JF10012# 100/12k JF16212* JF16018* JF16206 D44VH10 D45VH diode D45C JE 800 transistor L146 IC BD800

    2M3055

    Abstract: B0W94C mje520 2M5886 13007 hf mj 13008 2n5337 IU 1047 tip120 pnp BD908
    Text: G E N E R A L P U R P O S E T R A N S IS T O R S Comple­ Type mentary V CE0 V CB0 V (V) 'c (A) hFE * 'c (A) V CE V CEsat (V) (V) 9 'c (A) 'b R 1hj-c (mA) fC/W) 1.5 1.17 1.17 1.17 1.17 1399 1047 1047 1053 1053 T O -3 T O -3 T O -39 T O -3 T O -3 1047 1047


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    PDF 2N3055 2N3715 2N3716 2N3771 2M3772 2N3791 2N3792 2N4234 2N4398 2N4399 2M3055 B0W94C mje520 2M5886 13007 hf mj 13008 2n5337 IU 1047 tip120 pnp BD908

    2N3440 2N5416 REPLACEMENT

    Abstract: TRANSISTOR REPLACEMENT FOR 2N3053 40620 transistor 2n6308 TRANSISTOR REPLACEMENT Replacement for 2N5322 transistor 2n2102 replacement 300W TRANSISTOR AUDIO AMPLIFIER 2N4036 replacement Transistor PJ 431 40872
    Text: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C t o 3 0 A . . •c pm k - 12 A lc = 10A Py = 75 • 100W Switching Linear 130 x 130 130 x 1 3 0 1 3 0 x 130 BU 106 2N 5840 [N -P -N ] 2N 5240 [N -P -N ] BU 106 2N 5838 Va o sus =l40V VCER(sus) = 275 V hFE = 2 0 m in .


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    PDF lc-30A 130x130 180x180 210x210 bu106 2n5840 2n5240 2N6510 2N6308 2n5805 2N3440 2N5416 REPLACEMENT TRANSISTOR REPLACEMENT FOR 2N3053 40620 transistor 2n6308 TRANSISTOR REPLACEMENT Replacement for 2N5322 transistor 2n2102 replacement 300W TRANSISTOR AUDIO AMPLIFIER 2N4036 replacement Transistor PJ 431 40872