ELECTRONIC BALLAST DIAGRAM 400W
Abstract: ELECTRONIC BALLAST 150 W HID DIAGRAM dimmable HID BALLAST ballast electronic hps electronic ballast mh 400w ELECTRONIC BALLAST DIAGRAM 1000W 61347-1 sodium vapor lamp ballast current characteristics 3.5kw pfc discharge electronic ballast 1000W
Text: CAT RE-GEN COVER 02:CAT RE-GEN COVER 02 12/03/2010 16:06 Page 32 Europe Headquarters: Venture Lighting Europe Ltd. Trinity Court Batchworth Island Church Street, Rickmansworth, WD3 1RT, United Kingdom + 44 0845-2302222 Fax: +(44) 0845-2302077 [email protected]
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new44,
PO5341
ELECTRONIC BALLAST DIAGRAM 400W
ELECTRONIC BALLAST 150 W HID DIAGRAM
dimmable HID BALLAST
ballast electronic hps
electronic ballast mh 400w
ELECTRONIC BALLAST DIAGRAM 1000W
61347-1
sodium vapor lamp ballast current characteristics
3.5kw pfc
discharge electronic ballast 1000W
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BU 450 bdx
Abstract: bdx 330 BUX 837 BUX37 BDV65 ESM855 BUV74 bdx 66 bdx 67 BDX65 BUV54
Text: general purpose darlington selector guide Pp60 — 150 W q guide de sélection darlingtons usage général ^ \ v • CEO 45V 60V ihomsoncsf 80V 100V 120V BDX67 BOX 66 BDX 67 A BDX 66 A BDX 67 B BDX 66 B BDX 67 C BDX 66 C TO-3 BDV67 BDV66 BDV 67 A BDV 66 A
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BDV67
BDV66
BDV65
BDV64
BDX33
O-220
BDX53
BDX54
T0-220
BU 450 bdx
bdx 330
BUX 837
BUX37
ESM855
BUV74
bdx 66 bdx 67
BDX65
BUV54
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Untitled
Abstract: No abstract text available
Text: CRIMSON SEM ICO ND UC TO R INC TT ^2514096 CRIMSON SEMIC O N D U C T O R INC J 99D 00339 D dF | ESmOTb . . I P Cf h ~ 0 / M U LTIEPITAXIAL H.V. M E S A AND B IP L A N A R '- TO-3 continued V«o Vcio (V) (V) NPN BUW44 BUW45 BUW46 BUX13 BUX14 BUX43 BUX44 BUX46
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BUW44
BUW45
BUW46
BUX13
BUX14
BUX43
BUX44
BUX46
BUX47
BUX48
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MJE520
Abstract: bd189 sc 6038 MJE12007 MOTOROLA 527 33A mj4647 mje13006 BD 433NPNTO-126 Je105 mps-u
Text: MOTORCLA SC XSTRS/R F 12E D | t3t?5SM aüâ4m ? T | T -9 1 -0 1 Selection By Package Motorola power transistors are available in a wide variety of metal and plastic packages to match thermal, electrical and cost requirements. The following table com pares the basic
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-204AA
-204AE
T0-204A
97A-02
O-205AD
BUS51
BUV21
BUV11
2N6249
BUX41
MJE520
bd189
sc 6038
MJE12007
MOTOROLA 527 33A
mj4647
mje13006
BD 433NPNTO-126
Je105
mps-u
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Untitled
Abstract: No abstract text available
Text: TE X A S IN ST R -COPTO! 8 9 0 1 7 2 6 TEXAS INSTR ÎOPTO D 62C 3 6 6 4 9 BUX48, BUX48A N-P-N SILICON POW ER TRANSISTORS ~ r - ? 3 - t a r OCTOBER 1982 - REVISED OCTOBER 1984 • 175 W a t 2 5 ° C C ase Temperature • 15 A Continuous Collector Current •
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BUX48,
BUX48A
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TRANSISTOR BDX
Abstract: transistor BDX 62 A transistor BU 184 bdx 330 BU800 transistor BDX 65 transistor BU 109 darlington NPN 1000V 8a transistor ESM855 h21e BU 208
Text: SUPERSWITCH high power transistor M U 86 selector guide guide de sélection transistors grande puissance MU 86 SUPERSWITCH power transistor and darlington for TV applications selector guide guide de sélection transistors de puissance et darlingtons pour applications TV
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130CIV
109DP
O-220
104DP
BUX37
CB-159)
BUV54
CB-19
TRANSISTOR BDX
transistor BDX 62 A
transistor BU 184
bdx 330
BU800
transistor BDX 65
transistor BU 109
darlington NPN 1000V 8a transistor
ESM855
h21e BU 208
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U/25/20/TN26/15/850/yd 803 ic
Abstract: BUX22M JE13005 JE802 TIP+317+data+sheet bu808df1 je200 2n5337 S13003 2N6057
Text: G E N E R A L P U R P O S E T R A N S IS T O R S TY PE ‘c V CE V CEsat 8 A (V) (V) 'o (A) 'b Rthj-c (mA) rc / w ) V CE0 V CB0 'c (V) (V) (A) 22 22 4 BD433 BD434 50 2.00 1.0 0.50 2.00 200 25 40 5 M JE200 M JE210 70 0.50 1.0 0.30 0.50 50 30 30 3 M JE520
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BD433
JE200
JE520
D44H1
D44H2
D44C1
D44C2
D44C3
2N6288
BD435
U/25/20/TN26/15/850/yd 803 ic
BUX22M
JE13005
JE802
TIP+317+data+sheet
bu808df1
2n5337
S13003
2N6057
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BUX47A
Abstract: BUX47 BUX47B BY205-400
Text: T E X A S I N S T R -COPTO} Ô3&1726 T e x a s b5 instr DE | 0 T b l 7 5 b 003t.b41 fc, D 62C 36641 <o p t o > B U X 4 7, B U X 4 7A , BU X47B N-P-N SILICON POW ER TRANSISTORS 3 3 ' S 3 REVISED OCTOBER 1 9 8 4 125 W at 2 5 ° C Case Temperature 9 A Continuous Collector Current
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003bb41
BUX47,
BUX47A,
BUX47B
BUX47
BUX47A
BY205-400
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SDT 9202
Abstract: bdx 338 BU 450 bdx
Text: ALPHANUMERIC BC 107. .73 BC 108. .73 BC 109. .73 BC 170. .74 BC 171. .74 BC 172. .74 BC 173. .74 BC 174. .74 BC 177. .73 BC 178. .73 BC 179. .73 BC 190. .73 BC 237. .74 BC 238. .74 BC 239. .74 BC 250. .74
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BU106
Abstract: 2N5239 2N5240 2N5805 2N5838 2N5840 2N6251 2N6308 2N6510 2n5239 complement
Text: H IG H -V O LT A G E N-P-N & P-N-P POW ER T Y P E S 1C t o 3 0 A . . •c pm k - 12 A lc = 10A Py = 7 5 • 100W Switching Linear 130 x 130 130 x 1 3 0 1 3 0 x 130 BU 106 2N 5840 [N -P -N ] 2N 5240 [N -P -N ] BU 106 2N 5838 Va o sus =l40V VCER(sus) = 275 V
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lc-30A
130x130
180x180
210x210
BU106
2N5840
2N5240
2N6510
2N6308
2N5805
BU106
2N5239
2N5240
2N5805
2N5838
2N5840
2N6251
2N6308
2N6510
2n5239 complement
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Untitled
Abstract: No abstract text available
Text: TEXAS INSTR {OPTO} Ö 9 6 1 7 2 6 T EX A S D G3 bb b 3 IN S T R 62C O PTO 36663 B IIY Q 3 RI IYQ*5 N-P-N SILICON POWER TRANSISTORS Y - 3 s ~ n OCTOBER 1982 - REVISED OCTOBER 19B4 60 W at 5 0 ° C Case Temperature 6 A Continuous Collector Current 8 A Peak Collector Current
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HBF4727A
Abstract: ZD 607 - triac ZD 607 - triac circuit hbf 4727a TDA3310 hbf4727 HBF4740 DTL-930 7-stage frequency divider BF479S
Text: / h o f t f o f m A T E ^SEMICONDUCTOR “ PRODUCTS 1979/80 I NT RODUCTI ON This publication aims to provide condensed information on the vast range of standard devices currently produced by SGS-ATES. For easy consultation the products have been divided into several sections according to the main product
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2N6214
Abstract: BU106 2N5239 2N5240 2N5805 2N5838 2N5840 2N6251 2N6308 2N6510
Text: HIGH-VOLTAGE N-P-N & P-N-P POWER T Y PE S 1C t o 3 0 A . . •c pm k - 12 A lc = 10A Py = 7 5 • 100W Switching Linear 130 x 130 130 x 1 3 0 1 3 0 x 130 BU 106 2N 5840 [N -P -N ] 2N 5240 [N -P -N ] BU 106 2N 5838 Va o sus =l40V VCER(sus) = 275 V hFE = 2 0 m in .
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lc-30A
130x130
180x180
210x210
BU106
2N5840
2N5240
2N6510
2N6308
2N5805
2N6214
BU106
2N5239
2N5240
2N5805
2N5838
2N5840
2N6251
2N6308
2N6510
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
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BUX47A
Abstract: BUX47 BUX47B BY205-400 silicon power transistors T35 ET
Text: TEXAS IN STR -COPTO} Ô 3Ô 1726 T EX A S TË IN S T R DE | 0 T b l 7 5 b 003t.b41 62C 3 6 6 4 1 <OPTO> BUX47, BUX47A, BUX47B N-P-N SILICON POWER TRANSISTORS 3 3 ' S 3 R E V IS E D O C TO B E R 1 9 8 4 125 W at 2 5 °C Case Temperature 9 A Continuous Collector Current
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tbl75b
BUX47,
BUX47A,
BUX47B
bux47a
1ux47b
BUX47
t-35-/s
BUX47A
BY205-400
silicon power transistors
T35 ET
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2N6179
Abstract: POWER TRANSISTORS 10A 400v pnp BU106 2N3055 RCA 2N2102 BUX17 BUX18 RCA 2N3055 transistor transistor BDX 65 2N5240
Text: HIGH-VOLTAGE N-P-N & P-N-P POWER T Y PE S 1C t o 3 0 A . . •c pm k - 12 A lc = 10A Py = 7 5 • 100W Switching Linear 130 x 130 130 x 1 3 0 1 3 0 x 130 BU 106 2N 5840 [N -P -N ] 2N 5240 [N -P -N ] BU 106 2N 5838 Va o sus =l40V VCER(sus) = 275 V hFE = 2 0 m in .
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lc-30A
130x130
180x180
210x210
BU106
2N5840
2N5240
2N6510
2N6308
2N5805
2N6179
POWER TRANSISTORS 10A 400v pnp
BU106
2N3055 RCA
2N2102
BUX17
BUX18
RCA 2N3055 transistor
transistor BDX 65
2N5240
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357 opto
Abstract: BUX48 BUX48A BY205-400 npn 1000V 15A
Text: T EX AS I NS TR -COPTO! ~ tà D E T J f l'ib lT E b 8 9 0 1 7 2 6 TEXAS INSTR ÎOPTO 62C □ □ 3h b 4 36649 BUX48, BUX48A N-P-N SILICON POWER TRANSISTORS ~ r - ? 3 - t a r OCTOBER 1982 - REVISED OCTOBER 1984 • 175 W a t 2 5 ° C C ase Temperature •
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BUX48,
BUX48A
BUX48
BUX48A
T-33-/S"
357 opto
BY205-400
npn 1000V 15A
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RCA 40636 transistor
Abstract: rca 40636 rca 2N3771 power circuit 40636 rca rca 40327 300W TRANSISTOR AUDIO AMPLIFIER 40636 220v 300w ac regulator circuit 2N3055 RCA 40327
Text: Ic to 80 A . . . P t to 300 W . . . V cE to 170 V H O M ETAXIAL-BASE N-P-N POWER TYPES le - 16 A max. •260 W max. <e “ 1.6 A max. le a 1 . S A max. lc » 3 .S A max. lc * 4 A m ax. lc a 4 A max. le • 3 A max. le “ 3 A max. le - 7 A max. lc a 1 S A max.
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ITO-391-
ITO-220)
O-661â
ITO-2201
O-2201
ITO-31
130x130
RCA 40636 transistor
rca 40636
rca 2N3771 power circuit
40636 rca
rca 40327
300W TRANSISTOR AUDIO AMPLIFIER
40636
220v 300w ac regulator circuit
2N3055 RCA
40327
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RPY 86
Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
Text: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ
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bux81
Abstract: BUX80
Text: TEXAS INSTR {OPTO} 6961726 TE X A S b5 IN S TR DE IflTblTab 003bbS7 □ 62C <OPTO 3Ò657 BUX80, BUX81 N-P-N SILICON POWER TRANSISTORS /- 7 3-/3 O CTO BE R 1 9 8 2 - R EVISED O C T O B E R 198 4 1 5 0 W a t 2 5 ° C C ase T em p eratu re 1 0 A Continuous C ollector C urrent
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003bbS7
BUX80
BUX81
BUX80,
BUX81
T-33-/3
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BUX83
Abstract: BUX82 gg3b
Text: TEX AS INSTR {OPTO} “§ 9 6 1 7 2 6 TEXAS b2 IN STR » riflT h lT E b 62C O P T O QG3bbb3 36663 B IIY Q 3 RI IY Q Q N-P-N SILICON POWER TRANSISTORS O CTO BE R 1 9 8 2 - R EVISED O C T O B E R 198 4 60 W at 5 0 ° C C ase Temperature 6 A Continuous Collector Current
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BUX82
BUX83
BUX83
gg3b
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diode D45C
Abstract: JE 800 transistor L146 IC BD800
Text: STYLE 1: PIN 1. BASE 2. COLLECTOR CASE 340B-03 R e s is tiv e S w itc h in g Ic C o n t Am ps V C E O s u s V o lts M ax M in 8 500 700 f*FE M in /M a x @ lc |XS tf ps Amp M ax M ax M JF16006A 5 min 8 2.5 0.25 5 B U 1008A F 3 min 3 min 4.5 4.5 8* 8* 0.5*
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340B-03
JF16006A
JF10012#
100/12k
JF16212*
JF16018*
JF16206
D44VH10
D45VH
diode D45C
JE 800 transistor
L146 IC
BD800
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2M3055
Abstract: B0W94C mje520 2M5886 13007 hf mj 13008 2n5337 IU 1047 tip120 pnp BD908
Text: G E N E R A L P U R P O S E T R A N S IS T O R S Comple Type mentary V CE0 V CB0 V (V) 'c (A) hFE * 'c (A) V CE V CEsat (V) (V) 9 'c (A) 'b R 1hj-c (mA) fC/W) 1.5 1.17 1.17 1.17 1.17 1399 1047 1047 1053 1053 T O -3 T O -3 T O -39 T O -3 T O -3 1047 1047
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2N3055
2N3715
2N3716
2N3771
2M3772
2N3791
2N3792
2N4234
2N4398
2N4399
2M3055
B0W94C
mje520
2M5886
13007 hf
mj 13008
2n5337
IU 1047
tip120 pnp
BD908
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2N3440 2N5416 REPLACEMENT
Abstract: TRANSISTOR REPLACEMENT FOR 2N3053 40620 transistor 2n6308 TRANSISTOR REPLACEMENT Replacement for 2N5322 transistor 2n2102 replacement 300W TRANSISTOR AUDIO AMPLIFIER 2N4036 replacement Transistor PJ 431 40872
Text: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C t o 3 0 A . . •c pm k - 12 A lc = 10A Py = 75 • 100W Switching Linear 130 x 130 130 x 1 3 0 1 3 0 x 130 BU 106 2N 5840 [N -P -N ] 2N 5240 [N -P -N ] BU 106 2N 5838 Va o sus =l40V VCER(sus) = 275 V hFE = 2 0 m in .
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lc-30A
130x130
180x180
210x210
bu106
2n5840
2n5240
2N6510
2N6308
2n5805
2N3440 2N5416 REPLACEMENT
TRANSISTOR REPLACEMENT FOR 2N3053
40620 transistor
2n6308 TRANSISTOR REPLACEMENT
Replacement for 2N5322 transistor
2n2102 replacement
300W TRANSISTOR AUDIO AMPLIFIER
2N4036 replacement
Transistor PJ 431
40872
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