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    BU508AF TRANSISTOR Search Results

    BU508AF TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    BU508AF TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BU508AF

    Abstract: bu508af datasheet transistor bu508af
    Text: BU508AF BU508AF TV Horizontal Output Applications TO-3PF 1 1.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCES Collector-Emitter Voltage Parameter Value 1500 Units


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    BU508AF BU508AF bu508af datasheet transistor bu508af PDF

    Untitled

    Abstract: No abstract text available
    Text: BU508AF BU508AF TV Horizontal Output Applications TO-3PF 1 1.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCES Collector-Emitter Voltage Parameter Value 1500 Units


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    BU508AF BU508AFTBTU PDF

    BU508AF

    Abstract: No abstract text available
    Text: BU508AF BU508AF TV Horizontal Output Applications TO-3PF 1 1.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCES Collector-Emitter Voltage Parameter Value 1500 Units


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    BU508AF BU508AF PDF

    Untitled

    Abstract: No abstract text available
    Text: BU508AF BU508AF TV Horizontal Output Applications TO-3PF 1 1.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VCES Collector-Emitter Voltage 1500


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    BU508AF PDF

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    Abstract: bu508af philips
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508AF GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a fully isolated SOT199 envelope, primarily for use in horizontal deflection circuits of colour television receivers.


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    BU508AF OT199 OT199 transistor bu508af bu508af philips PDF

    BU508AF

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification BU508AF Silicon NPN Power Transistors DESCRIPTION •With TO-3PFa package ·High voltage ·High speed switching APPLICATIONS ·For use in horizontal deflection circuits of high resolution monitors PINNING PIN DESCRIPTION


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    BU508AF BU508AF PDF

    BU508AF

    Abstract: transistor bu508af transistors FOR COLLECTOR CURRENT 4.5A
    Text: SILICON DIFFUSED POWER TRANSISTOR BU508AF GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic envelope,primarily for use in switching power circuites of colour television receivers QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM


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    BU508AF 16KHz 100mA 16KHz BU508AF transistor bu508af transistors FOR COLLECTOR CURRENT 4.5A PDF

    BU508AF

    Abstract: transistor bu508af transistor bu508af equivalent bu508af transistor bu508af datasheet ISOWATT218FX JESD97
    Text: BU508AF High voltage NPN power transistor for standard definition CRT display Features • State-of-the-art technology: – Diffused collector “Enhanced generation” ■ Stable performances versus operating temperature variation ■ Low base-drive requirement


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    BU508AF ISOWATT218FX BU508AF transistor bu508af transistor bu508af equivalent bu508af transistor bu508af datasheet ISOWATT218FX JESD97 PDF

    BU508AF equivalent

    Abstract: transistor bu508af transistor bu508af equivalent transistor BU508AF Data- sheet bu508af datasheet curve tracer all ic datasheet in one pdf file IBM REV 2.8 transistor fall time BU508AD
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508AF GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a fully isolated SOT199 envelope, primarily for use in horizontal deflection circuits of colour television receivers.


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    BU508AF OT199 OT199 BU508AF equivalent transistor bu508af transistor bu508af equivalent transistor BU508AF Data- sheet bu508af datasheet curve tracer all ic datasheet in one pdf file IBM REV 2.8 transistor fall time BU508AD PDF

    Untitled

    Abstract: No abstract text available
    Text: BU508AF High voltage NPN power transistor for standard definition CRT display Features • State-of-the-art technology: – Diffused collector “Enhanced generation” ■ Stable performances versus operating temperature variation ■ Low base-drive requirement


    Original
    BU508AF ISOWATT218FX BU508AF PDF

    Untitled

    Abstract: No abstract text available
    Text: BU508AF High voltage NPN Power transistor for standard Definition CRT display Preliminary Data Features • State-of-the-art technology: – Diffused collector “Enhanced generation” ■ Stable performances versus operating temperature variation ■ Low base-drive requirement


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    BU508AF 2002/93/EC ISOWATT218FX BU508AF PDF

    BU508AF

    Abstract: BU508DF BU508F
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN POWER TRANSISTORS BU508F, BU508AF, BU508DF TO- 3P Fully Isolated Plastic Package B C E Fast Switching, High Voltage Devices for use in Horizontal Deflection Circuits of Colour TV


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    BU508F, BU508AF, BU508DF C-120 BU508F BU508DFRev230202E BU508AF BU508DF PDF

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN POWER TRANSISTORS BU508F, BU508AF, BU508DF TO- 3P Fully Isolated Plastic Package B C E Fast Switching, High Voltage Devices for use in Horizontal Deflection Circuits of Colour TV


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    BU508F, BU508AF, BU508DF C-120 BU508F BU508DFRev230202E PDF

    BU508AF

    Abstract: BU508F bu508df bu508af datasheet transistor bu508af equivalent
    Text: Transys Electronics L I M I T E D NPN POWER TRANSISTORS BU508F, BU508AF, BU508DF TO- 3P Fully Isolated Plastic Package B C E Fast Switching, High Voltage Devices for use in Horizontal Deflection Circuits of Colour TV ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector -Emitter Voltage


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    bu508af datasheet

    Abstract: BU508AF BU508DF BU508F
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN POWER TRANSISTORS BU508F, BU508AF, BU508DF TO- 3P Fully Isolated Plastic Package B C E Fast Switching, High Voltage Devices for use in Horizontal Deflection Circuits of Colour TV


    Original
    BU508F, BU508AF, BU508DF C-120 BU508F BU508DFRev230202E bu508af datasheet BU508AF BU508DF PDF

    BU508AF

    Abstract: bu508af transistor
    Text: NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR BU508AF TV HORIZONTAL OUTPUT APPLICATIONS ABSOLUTE MIXIMUM RATING Chracteristlc Collector Emitter Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current DC Collector Current (Pulse) Collector Dissipation (Tc=25'C)


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    BU508AF

    Abstract: BU508F
    Text: NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR BU508AF TV HORIZONTAL OUTPUT APPLICATIONS ABSOLUTE MAXIMUM RATINGS Characteristic Collector Emitter Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current DC Collector Current (Pulse) Collector Dissipation (Tc = 25°C)


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    BU508AF BU508F BU508AF BU508F PDF

    BU508AF

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508AF GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a fully isolated SOT199 envelope, primarily for use in horizontal deflection circuits of colour television receivers.


    OCR Scan
    BU508AF OT199 16kHz BU508AF PDF

    BU508DF

    Abstract: BU508DF1 BU508AF transistor bu508af UBC023 bu50ba bu508af philips philips bu508af
    Text: Philips Semiconductors Product specification Silicon diffused power transistors BU508AF; BU508DF High-voltage, high-speed switching npn transistors in a fu lly isolated SOT199 envelope w ith integrated efficiency diode fo r the BU508DF , prim arily intended for use in horizontal deflection


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    Abstract: bu508af philips
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508AF GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a fully isolated SOT199 envelope, primarily for use in horizontal deflection circuits of colour television receivers.


    OCR Scan
    BU508AF OT199 16k-- 12nfb bu508af philips PDF

    Untitled

    Abstract: No abstract text available
    Text: NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR BU508AF TV HORIZONTAL OUTPUT APPLICATIONS ABSOLUTE MIXIMUM RATING C haracteristic Symbol Rating Unit Collector Emitter Voltage VcES 1500 V Collector Emitter Voltage VcEO 700 V Emitter Base Voltage V ebo 5 V Collector Current DC


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    BU508AF PDF

    bu508af

    Abstract: bu508af transistor
    Text: NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR BU508AF TV HORIZONTAL OUTPUT APPLICATIONS ABSOLUTE MIXIMUM RATING Rating Unit Collector Emitter Voltage V cES 1500 V Collector Emitter Voltage V cEO 700 V Emitter B ase Voltage V 5 V A Characteristic Symbol ebo


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    BU508AF 300uS, bu508af bu508af transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR BU508AF TV HORIZONTAL OUTPUT APPLICATIONS ABSOLUTE MIXIMUM RATING C haracteristic Sym bol Rating Unit C ollecto r E m itter Voltage V ceS 1500 V C ollecto r E m itter Voltage VcEO 700 V Em itter Base Voltage V ebo


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    BU508AF 100mA, 300ns, PDF

    bu508df

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE b=lE D bbS3T31 0D2fl2?D 325 IAPX BU508AF BU508DF SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed switching npn transistors in a fu lly isolated SOT199 envelope w ith integrated efficiency diode fo r the BU508DF , prim arily intended fo r use in horizontal deflection


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