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Nexperia BUK9Y4R8-60E,115 MOSFET N-CH 60V 100A LFPAK56
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BUK9Y4R8-60E,115	Reel	15,000		1,500	1 - 10 - 100 - 1000 - 10000 $0.8335	Buy Now
TTI	BUK9Y4R8-60E,115	Reel	1,500		1,500	1 - 10 - 100 - 1000 - 10000 $0.75	Buy Now
Nexperia BUK9K52-60E,115 MOSFET 2N-CH 60V 16A LFPAK56D
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BUK9K52-60E,115	Digi-Reel	13,220		1	1 $1.23 10 $0.83 100 $1.23 1000 $0.46534 10000 $0.46534	Buy Now
	BUK9K52-60E,115	Cut Tape	13,220		1	1 $1.23 10 $0.83 100 $1.23 1000 $0.46534 10000 $0.46534	Buy Now
	BUK9K52-60E,115	Reel	12,000		1,500	1 - 10 - 100 - 1000 - 10000 $0.37	Buy Now
Newark	BUK9K52-60E,115	Cut Tape	2,093		1	1 $0.502 10 $0.502 100 $0.502 1000 $0.502 10000 $0.502	Buy Now
EBV Elektronik	BUK9K52-60E,115		3,000	15 Weeks	1,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Nexperia BUK9K45-100E,115 MOSFET 2N-CH 100V 21A LFPAK56D
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BUK9K45-100E,115	Reel	3,000		1,500	1 - 10 - 100 - 1000 - 10000 $0.5075	Buy Now
	BUK9K45-100E,115	Digi-Reel	3,000		1	1 $1.57 10 $1.061 100 $1.57 1000 $0.60618 10000 $0.60618	Buy Now
	BUK9K45-100E,115	Cut Tape	3,000		1	1 $1.57 10 $1.061 100 $1.57 1000 $0.60618 10000 $0.60618	Buy Now
Nexperia BUK9Y30-75B,115 MOSFET N-CH 75V 34A LFPAK56
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BUK9Y30-75B,115	Digi-Reel	1,719		1	1 $1.44 10 $0.968 100 $1.44 1000 $0.54926 10000 $0.54926	Buy Now
	BUK9Y30-75B,115	Cut Tape	1,719		1	1 $1.44 10 $0.968 100 $1.44 1000 $0.54926 10000 $0.54926	Buy Now
	BUK9Y30-75B,115	Reel	1,500		1,500	1 - 10 - 100 - 1000 - 10000 $0.48514	Buy Now
Newark	BUK9Y30-75B,115	Bulk	4,643		1	1 $0.967 10 $0.817 100 $0.628 1000 $0.438 10000 $0.438	Buy Now
Bristol Electronics	BUK9Y30-75B,115		1,572		4	1 - 10 $1.5 100 $0.5625 1000 $0.39 10000 $0.39	Buy Now
Rochester Electronics	BUK9Y30-75B,115		500		1	1 $0.3831 10 $0.3831 100 $0.3601 1000 $0.3256 10000 $0.3256	Buy Now
Avnet Silica	BUK9Y30-75B,115		1,500	12 Weeks	1,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Nexperia BUK9Y15-100E,115 MOSFET N-CH 100V 69A LFPAK56
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BUK9Y15-100E,115	Cut Tape	1,498		1	1 $1.78 10 $1.203 100 $1.78 1000 $0.69376 10000 $0.69376	Buy Now
Avnet Silica	BUK9Y15-100E,115		4,500	12 Weeks	1,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now

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BUK9 Datasheets (500)

Part	Manufacturer	Description	Datasheet Type	PDF
BUK9006-55A	Philips Semiconductors	N-channel Enhancement mode field-effect power Transistor	Original	PDF
BUK9107-40ATC	NXP Semiconductors	BUK9107-40ATC - TrenchPLUS logic level FET - Configuration: Single N-channel ; Current sensor: no ; ID DC: 75 A; RDS(on): 6.2@10V7@5V mOhm; Temperature sensor: yes ; Thermal Resistance: 0.55 K/W; VDSmax: 40 V	Original	PDF
BUK9107-40ATC	Philips Semiconductors	TrenchPLUS logic level FET	Original	PDF
BUK9107-40ATC,118	NXP Semiconductors	TrenchPLUS logic level FET - Configuration: Single N-channel ; Current sensor: no ; I_D DC: 75 A; R_DS(on): 6.2@10V7@5V mOhm; Temperature sensor: yes ; Thermal Resistance: 0.55 K/W; V_DSmax: 40 V; Package: SOT426 (D2PAK); Container: Tape reel smd	Original	PDF
BUK9107-40ATC/T3	NXP Semiconductors	TrenchPLUS logic level FET - Configuration: Single N-channel ; Current sensor: no ; I_D DC: 75 A; R_DS(on): 6.2@10V7@5V mOhm; Temperature sensor: yes ; Thermal Resistance: 0.55 K/W; V_DSmax: 40 V	Original	PDF
BUK9107-55ATE	NXP Semiconductors	BUK9107-55ATE - TrenchPLUS logic level FET - Configuration: Single N-channel ; Current sensor: no ; ID DC: 75 A; RDS(on): 6.2@10V7@5V mOhm; Temperature sensor: yes ; Thermal Resistance: 0.55 K/W; VDSmax: 55 V	Original	PDF
BUK9107-55ATE	Philips Semiconductors	TrenchPLUS logic level FET	Original	PDF
BUK9107-55ATE,118	NXP Semiconductors	BUK9107-55 - TRANSISTOR 75 A, 55 V, 0.0077 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-5, FET General Purpose Power	Original	PDF
BUK9107-55ATE,118	Philips Semiconductors	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 55V 75A D2PAK	Original	PDF
BUK9107-55ATE/T3	NXP Semiconductors	TrenchPLUS logic level FET - Configuration: Single N-channel ; Current sensor: no ; I_D DC: 75 A; R_DS(on): 6.2@10V7@5V mOhm; Temperature sensor: yes ; Thermal Resistance: 0.55 K/W; V_DSmax: 55 V	Original	PDF
BUK9120-48TC	Philips Semiconductors	PowerMOS transistor Voltage clamped logic level FET with temperature sensing diodes	Original	PDF
BUK912048TCT3	Philips Semiconductors	PowerMOS transistor Voltage clamped logic level FET with temperature sensing diodes	Original	PDF
BUK9207-30B	NXP Semiconductors	BUK9207-30B - Trenchmos logic level FET - Configuration: Single N-channel ; ID DC: 75 A; Qgd (typ): 12 nC; RDS(on): 5@10V7@[email protected] mOhm; Thermal Resistance: 0.95 K/W; VDSmax: 30 V	Original	PDF
BUK9207-30B	Philips Semiconductors	Trenchmos logic level FET	Original	PDF

BUK9207-30B,118	NXP Semiconductors	BUK9207 - TRANSISTOR 75 A, 30 V, 0.0077 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, PLASTIC, SC-63, TO-252, D-PAK-3, FET General Purpose Power	Original	PDF
BUK9207-30B,118	NXP Semiconductors	Trenchmos logic level FET - Configuration: Single N-channel ; I_D DC: 75 A; Q_gd (typ): 12 nC; R_DS(on): 5@10V7@[email protected] mOhm; Thermal Resistance: 0.95 K/W; V_DSmax: 30 V; Package: SOT428 (DPAK); Container: Tape reel smd	Original	PDF
BUK9207-30B/T3	NXP Semiconductors	Trenchmos logic level FET - Configuration: Single N-channel ; I_D DC: 75 A; Q_gd (typ): 12 nC; R_DS(on): 5@10V7@[email protected] mOhm; Thermal Resistance: 0.95 K/W; V_DSmax: 30 V	Original	PDF
BUK9209-40B	NXP Semiconductors	BUK9209-40B - Trenchmos logic level FET - Configuration: Single N-channel ; ID DC: 75 A; Qgd (typ): 12 nC; RDS(on): 7@10V9@[email protected] mOhm; Thermal Resistance: 0.95 K/W; VDSmax: 40 V	Original	PDF
BUK9209-40B	Philips Semiconductors		Original	PDF
BUK9209-40B,118	NXP Semiconductors	BUK9209 - TRANSISTOR 75 A, 40 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, PLASTIC, SC-63, DPAK-3, FET General Purpose Power	Original	PDF

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BUK9 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
BUK9Y14-40B Abstract: No abstract text available Text: BUK9Y14-40B N-channel TrenchMOS logic level FET Rev. 03 — 2 June 2008 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using NXP High Performance Automotive (HPA) TrenchMOS technology. This	Original	PDF	BUK9Y14-40B BUK9Y14-40B
BUK9907-55ATE Abstract: No abstract text available Text: BUK9907-55ATE N-channel TrenchPLUS logic level FET Rev. 02 — 16 February 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for	Original	PDF	BUK9907-55ATE BUK9907-55ATE
55A4 Abstract: BUK98150-55A SC-73 Text: BUK98150-55A N-channel TrenchMOS logic level FET Rev. 04 — 11 June 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor FET in a plastic package using NXP General Purpose Automotive (GPA) TrenchMOS technology.	Original	PDF	BUK98150-55A BUK98150-55A 55A4 SC-73
buk9520-100b Abstract: c774 Text: BUK9520-100B N-channel TrenchMOS logic level FET Rev. 01 — 6 May 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to	Original	PDF	BUK9520-100B AEC-Q101 buk9520-100b c774
transistor fet 3884 Abstract: MS-013 SO20 AN10273 Text: BUK9MGP-55PTS Dual TrenchPLUS logic level FET Rev. 01 — 14 May 2009 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance HPA TrenchPLUS technology, featuring	Original	PDF	BUK9MGP-55PTS BUK9MGP-55PTS transistor fet 3884 MS-013 SO20 AN10273
BUK9620-100B Abstract: c778 c776 BUK9620 10S100 Text: BUK9620-100B N-channel TrenchMOS logic level FET Rev. 02 — 6 May 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to	Original	PDF	BUK9620-100B AEC-Q101 BUK9620-100B c778 c776 BUK9620 10S100
Untitled Abstract: No abstract text available Text: BUK9637-100E N-channel TrenchMOS logic level FET 5 October 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high	Original	PDF	BUK9637-100E OT404
MIFARE DESFire Abstract: No abstract text available Text: BUK9K29-100E Dual N-channel TrenchMOS logic level FET 28 August 2012 Product data sheet 1. Product profile 1.1 General description Dual logic level N-channel MOSFET in a LFPAK56D package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use	Original	PDF	BUK9K29-100E LFPAK56D MIFARE DESFire
9215055A Abstract: No abstract text available Text: DP AK BUK92150-55A N-channel TrenchMOS logic level FET 12 June 2014 Product data sheet 1. General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to	Original	PDF	BUK92150-55A 9215055A
Untitled Abstract: No abstract text available Text: Thermal RC network Foster SPICE thermal model Symbol Rth(j-mb) Parameter thermal resistance from junction to mounting base BUK9Y12-55B Conditions Cth1 4.181E-02 F Cth2 6.609E-03 F Cth3 1.555E-03 F Cth4 3.660E-04 F Cth5 8.612E-05 F Cth6 2.026E-05 F Cth7 4.768E-06 F	Original	PDF	BUK9Y12-55B 660E-04 612E-05 026E-05 768E-06 122E-06 566E-01 520E-01 699E-02 150E-02
Untitled Abstract: No abstract text available Text: Thermal RC network Foster SPICE thermal model Symbol Rth(j-mb) Parameter thermal resistance from junction to mounting base BUK9Y40-55B Conditions Cth1 1.131E-02 F Cth2 1.786E-03 F Cth3 4.474E-04 F Cth4 1.121E-04 F Cth5 2.808E-05 F Cth6 7.035E-06 F Cth7 1.763E-06 F	Original	PDF	BUK9Y40-55B 121E-04 808E-05 035E-06 763E-06 416E-07 822E-01 843E-01 977E-02 344E-02
915055 Abstract: No abstract text available Text: SO T2 23 BUK98150-55A N-channel TrenchMOS logic level FET 19 March 2014 Product data sheet 1. General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to	Original	PDF	BUK98150-55A 915055
Untitled Abstract: No abstract text available Text: Thermal RC network Foster SPICE thermal model Symbol Rth(j-mb) Parameter thermal resistance from junction to mounting base BUK9Y11-30B Conditions Cth1 2.589E-02 F Cth2 4.042E-03 F Cth3 9.598E-04 F Cth4 2.279E-04 F Cth5 5.413E-05 F Cth6 1.285E-05 F Cth7 3.053E-06 F	Original	PDF	BUK9Y11-30B 279E-04 413E-05 285E-05 053E-06 249E-07 498E-01 148E-01 929E-02 473E-03
Untitled Abstract: No abstract text available Text: SO T2 23 BUK9875-100A N-channel TrenchMOS logic level FET 19 March 2014 Product data sheet 1. General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to	Original	PDF	BUK9875-100A

buk954r2 Abstract: BUK95 BUK954R2-55B Text: BUK954R2-55B N-channel TrenchMOS logic level FET Rev. 03 — 8 June 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to	Original	PDF	BUK954R2-55B buk954r2 BUK95 BUK954R2-55B
Untitled Abstract: No abstract text available Text: LF PA K 56D BUK9K17-60E Dual N-channel 60 V, 17 mΩ logic level MOSFET 19 March 2014 Product data sheet 1. General description Dual logic level N-channel MOSFET in an LFPAK56D Dual Power-SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101	Original	PDF	BUK9K17-60E LFPAK56D
BUK92150-55A Abstract: No abstract text available Text: BUK92150-55A N-channel TrenchMOS logic level FET Rev. 04 — 8 June 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to	Original	PDF	BUK92150-55A BUK92150-55A
BUK9609-40B Abstract: BUK95 Text: BUK9609-40B N-channel TrenchMOS logic level FET Rev. 02 — 7 June 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to	Original	PDF	BUK9609-40B BUK9609-40B BUK95
D970 Abstract: TRANSISTOR D972 BUK9C10-65BIT d973 BUK9C10 th d970 d787 D972 D976 transistor D973 Text: BUK9C10-65BIT N-channel TrenchPLUS logic level FET Rev. 02 — 21 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode field-effect power transistor in SOT427. Device is manufactured using NXP High-Performance TrenchPLUS technology, featuring very low	Original	PDF	BUK9C10-65BIT OT427. AEC-Q101 D970 TRANSISTOR D972 BUK9C10-65BIT d973 BUK9C10 th d970 d787 D972 D976 transistor D973
BUK9237-55A Abstract: buk9237 Text: BUK9237-55A TrenchMOS logic level FET Rev. 01 — 03 October 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.	Original	PDF	BUK9237-55A BUK9237-55A OT428 buk9237
BUK9230-55A Abstract: No abstract text available Text: BUK9230-55A TrenchMOS logic level FET Rev. 02 — 10 October 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.	Original	PDF	BUK9230-55A BUK9230-55A OT428
BUK9212-55B Abstract: No abstract text available Text: BUK9212-55B TrenchMOS logic level FET Rev. 02 — 12 December 2003 M3D300 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.	Original	PDF	BUK9212-55B M3D300 OT428 BUK9212-55B
BUK98150-55A Abstract: ID16 SC-73 Text: BUK98150-55A TrenchMOS logic level FET Rev. 01 — 03 October 2000 M3D087 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.	Original	PDF	BUK98150-55A M3D087 BUK98150-55A OT223 SC-73) ID16 SC-73
BUK9120-48TC Abstract: SOT426 Text: Philips Semiconductors Product specification PowerMOS transistor Voltage clamped logic level FET with temperature sensing diodes BUK9120-48TC GENERAL DESCRIPTION Protected N-channel enhancement mode logic level field-effect power transistor in a plastic envelope	Original	PDF	BUK9120-48TC OT426 BUK9120-48TC SOT426

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BUK9 Price and Stock

Nexperia BUK9Y4R8-60E,115

Nexperia BUK9K52-60E,115

Nexperia BUK9K45-100E,115

Nexperia BUK9Y30-75B,115

Nexperia BUK9Y15-100E,115

BUK9 Datasheets (500)

BUK9 Datasheets Context Search

BUK9Y14-40B

BUK9907-55ATE

55A4

buk9520-100b

transistor fet 3884

BUK9620-100B

Untitled

MIFARE DESFire

9215055A

Untitled

Untitled

915055

Untitled

Untitled

buk954r2

Untitled

BUK92150-55A

BUK9609-40B

D970

BUK9237-55A

BUK9230-55A

BUK9212-55B

BUK98150-55A

BUK9120-48TC