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    BUL54 Price and Stock

    Inventek Systems LLC ISM4343-WBU-L54U

    WIFI/BT COMBO MOD
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    DigiKey ISM4343-WBU-L54U Tray 1
    • 1 $19.48
    • 10 $14.142
    • 100 $11.45225
    • 1000 $10.25
    • 10000 $10.25
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    Avnet Americas ISM4343-WBU-L54U Tray 12 Weeks 196
    • 1 -
    • 10 -
    • 100 -
    • 1000 $11.10868
    • 10000 $11.10868
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    Mouser Electronics ISM4343-WBU-L54U
    • 1 -
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    • 1000 $10.25
    • 10000 $10.25
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    Inventek Systems LLC ISM4343-WBU-L54C

    WIFI/BT COMBO MOD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ISM4343-WBU-L54C Tray 1
    • 1 $19.48
    • 10 $14.142
    • 100 $11.45225
    • 1000 $10.25
    • 10000 $10.25
    		Buy Now
    Avnet Americas ISM4343-WBU-L54C Tray 12 Weeks 196
    • 1 -
    • 10 -
    • 100 -
    • 1000 $11.10868
    • 10000 $11.10868
    		Buy Now
    Mouser Electronics ISM4343-WBU-L54C
    • 1 -
    • 10 -
    • 100 -
    • 1000 $10.25
    • 10000 $10.25
    		Get Quote

    BUL54 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BUL54 Semelab ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR Original PDF
    BUL54A Semelab ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR Original PDF
    BUL54A Semelab Bi-Polar Transistors (CECC and High Rel) & High Energy Scan PDF
    BUL54AFI Semelab ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR Original PDF
    BUL54A-SM Semelab ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR Original PDF
    BUL54ASMD Semelab ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR Original PDF
    BUL54A-TO5 Semelab Bipolar NPN Device in a Hermetically Sealed TO5 Metal Package Original PDF
    BUL54B Semelab ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR Original PDF
    BUL54B Semelab Bi-Polar Transistors (CECC and High Rel) & High Energy Scan PDF
    BUL54BFI Semelab ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR Original PDF
    BUL54BSMD Semelab Bipolar NPN Device in a Hermetically Sealed Ceramic Surface Mount Package for High Reliability Applications Original PDF

    BUL54 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BUL54BSMD

    Abstract: No abstract text available
    Text: BUL54BSMD Dimensions in mm inches . 0.89 (0.035) min. 3.60 (0.142) Max. 3 16.02 (0.631) 15.73 (0.619) 4.14 (0.163) 3.84 (0.151) 3.70 (0.146) 3.41 (0.134) 1 10.69 (0.421) 10.39 (0.409) 0.76 (0.030) min. 3.70 (0.146) 3.41 (0.134) Bipolar NPN Device in a Hermetically sealed


    Original     		PDF BUL54BSMD O276AB) 15-Aug-02 BUL54BSMD

    BUL54AFI

    Abstract: transistor 500v 0.5a NPN Transistor VCEO 1000V
    Text: SEME BUL54AFI LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 6.3 10.2 3.6 Dia. 15.1 Designed for use in electronic ballast applications • • • • • 1 2 3 14.0 1.3 0.85 2.54 2.54


    Original     		PDF BUL54AFI 100mA BUL54AFI transistor 500v 0.5a NPN Transistor VCEO 1000V

    BUL54B

    Abstract: transistor 800V 1A
    Text: SEME BUL54B LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 6.3 10.2 3.6 Dia. 15.1 Designed for use in electronic ballast applications • • • • • 1 2 3 14.0 1.3 0.85 2.54 2.54


    Original     		PDF BUL54B 100mA BUL54B transistor 800V 1A

    Untitled

    Abstract: No abstract text available
    Text: SEME BUL54A LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 10.2 4.5 6.3 1.3 3.6 Dia. 18.0 15.1 Designed for use in electronic ballast applications • • • • • 1 2 3 14.0 1.3


    Original     		PDF BUL54A 100mA

    Untitled

    Abstract: No abstract text available
    Text: SEME BUL54BFI LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 6.3 10.2 3.6 Dia. 15.1 Designed for use in electronic ballast applications • • • • • 1 2 3 14.0 1.3 0.85 2.54 2.54


    Original     		PDF BUL54BFI 100mA

    BUL54ASMD

    Abstract: NPN Transistor VCEO 1000V
    Text: BUL54ASMD ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 3 .6 0 0 .1 4 2 M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) 1 1 0 .6 9 (0 .4 2 1 )


    Original     		PDF BUL54ASMD 100mA 10MHz 300ms BUL54ASMD NPN Transistor VCEO 1000V

    Untitled

    Abstract: No abstract text available
    Text: SEME BUL54AFI LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 6.3 10.2 3.6 Dia. 15.1 Designed for use in electronic ballast applications • • • • • 1 2 3 14.0 1.3 0.85 2.54 2.54


    Original     		PDF BUL54AFI 100mA

    TO5 package

    Abstract: BUL54A-TO5
    Text: BUL54A-TO5 Dimensions in mm inches . 8.51 (0.34) 9.40 (0.37) Bipolar NPN Device in a Hermetically sealed TO5 Metal Package. 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 38.00 (1.5) min. Bipolar NPN Device. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021)


    Original     		PDF BUL54A-TO5 O205AA) 20-Aug-02 TO5 package BUL54A-TO5

    NPN Transistor VCEO 1000V

    Abstract: No abstract text available
    Text: SEME BUL54A-T257F LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 4.50 4.81 10.40 10.80 3.50 Dia. 3.70 Designed for use in electronic ballast applications 10.50 10.67 16.30 16.70 3.0


    Original     		PDF BUL54A-T257F 100mA 300ms NPN Transistor VCEO 1000V

    BUL54A

    Abstract: NPN Transistor VCEO 1000V
    Text: SEME BUL54A–SM LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 11.5 0.25 3.5 1 3 3.0 9.0 1.5 15.8 4.6 2.0 3.5 2 8.5 FEATURES TO220 Ceramic Surface Mount Package Pad 1 – Base Pad 2 – Collector


    Original     		PDF BUL54A 500mA 100mA 10MHz NPN Transistor VCEO 1000V

    NPN Transistor VCEO 1000V

    Abstract: BUL54A-TO5
    Text: SEME BUL54A-TO5 LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 8.51 0.34 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) Designed for use in electronic ballast applications 6.10 (0.240) 6.60 (0.260)


    Original     		PDF BUL54A-TO5 O-205AA) NPN Transistor VCEO 1000V BUL54A-TO5

    Untitled

    Abstract: No abstract text available
    Text: SILICON POWER NPN TRANSISTOR BUL54A-TO5 • Advanced Distributed Base design • High Voltage • Fast Switching • High Energy Rating • Screening Options Available Features: • • • Multi–base for efficient energy distribution across the chip resulting in significantly improved switching and


    Original     		PDF BUL54A-TO5 O-205AA)

    BUL54BFI

    Abstract: No abstract text available
    Text: SEME BUL54BFI LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 6.3 10.2 3.6 Dia. 15.1 Designed for use in electronic ballast applications • • • • • 1 2 3 14.0 1.3 0.85 2.54 2.54


    Original     		PDF BUL54BFI 100mA BUL54BFI

    NPN Transistor VCEO 1000V

    Abstract: BUL54A transistor 500v 0.5a
    Text: SEME BUL54A LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 10.2 4.5 6.3 1.3 3.6 Dia. 18.0 15.1 Designed for use in electronic ballast applications • • • • • 1 2 3 14.0 1.3


    Original     		PDF BUL54A 100mA NPN Transistor VCEO 1000V BUL54A transistor 500v 0.5a

    Untitled

    Abstract: No abstract text available
    Text: SEME BUL54B LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 6.3 10.2 3.6 Dia. 15.1 Designed for use in electronic ballast applications • • • • • 1 2 3 14.0 1.3 0.85 2.54 2.54


    Original     		PDF BUL54B 100mA

    transistor VCEO 1000V

    Abstract: NPN Transistor VCEO 1000V BUL54A-TO5 LE17
    Text: SILICON POWER NPN TRANSISTOR BUL54A-TO5 • Advanced Distributed Base design • High Voltage • Fast Switching • High Energy Rating • Screening Options Available Features: • • • Multi–base for efficient energy distribution across the chip resulting in significantly improved switching and


    Original     		PDF BUL54A-TO5 O-205AA) transistor VCEO 1000V NPN Transistor VCEO 1000V BUL54A-TO5 LE17

    transistor 800V 1A

    Abstract: No abstract text available
    Text: bOE D fll331fl? 000051b 111 • S N L B SEMELAB PLC SEMELAB 'T J 'S - v l? BUL54B ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensionsin mm Designed for use in electronic ballast lighting applications


    OCR Scan     		PDF fll331fl? 000051b BUL54B T0220 300/is transistor 800V 1A

    Untitled

    Abstract: No abstract text available
    Text: INI INI SEME BUL54BFI LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 10.2 t* - * \ à 3.6 Dia. Designed for use in electronic ballast applications • SEMEFAB DESIGNED AND DIFFUSED DIE


    OCR Scan     		PDF BUL54BFI 100mA

    Untitled

    Abstract: No abstract text available
    Text: lili = & = m i S E M E BUL54A-SM LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm •SEMEFAB DESIGNED AND DIFFUSED DIE *— _2.0 3.5 r ^ * ►n .o*— ! - 111 •HIGH VOLTAGE 0.25 3.5


    OCR Scan     		PDF BUL54A-SM T0220 100mA 10MHz

    MIL npn high voltage transistor 1000V

    Abstract: No abstract text available
    Text: Illl = lt = Illl SEME BUL54A-SM LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 'SEMEFAB DESIGNED AND DIFFUSED DIE :-► r4- •HIGH VOLTAGE 2.0 3.5 ► < 3.5 • FAST SWITCHING tf = 40ns


    OCR Scan     		PDF BUL54A-SM T0220 MIL npn high voltage transistor 1000V

    Semefab

    Abstract: MIL npn high voltage transistor 1000V
    Text: Mil =X= mi SEME BUL54A LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 4.5 10.2 f*-► , 1.3 3.6 Dia. Designed for use in electronic ballast applications • SEMEFAB DESIGNED AND DIFFUSED DIE


    OCR Scan     		PDF BUL54A T0220 100mA Semefab MIL npn high voltage transistor 1000V

    Untitled

    Abstract: No abstract text available
    Text: INI INI SEME BUL54AFI LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 10.2 3.6 Dia. Designed for use in electronic ballast applications • SEMEFAB DESIGNED AND DIFFUSED DIE 1 2 3 • HIGH VOLTAGE


    OCR Scan     		PDF BUL54AFI 100mA

    T0251

    Abstract: T0-251
    Text: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES Type_No BUL47A BUL47B BUL48A BUL48B BUL49A BUL49B BUL50A BUL50B BUL51A BUL51B BUL52A BUL52AFI BUL52AH BUL52B BUL52BFI BUL52BL BUL53A BUL53B BUL54A BUL54B BUL54BFI BUL55A BUL55B BUL56A BUL56B BUL57A BUL58A


    OCR Scan     		PDF BUL47A BUL47B BUL48A BUL48B BUL49A BUL49B BUL50A BUL50B BUL51A BUL51B T0251 T0-251

    transistor 800V 1A

    Abstract: No abstract text available
    Text: Mil =X= mi SEME BUL54B LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 10.2 t*-*\ à 3.6 Dia. Designed for use in electronic ballast applications • SEMEFAB DESIGNED AND DIFFUSED DIE


    OCR Scan     		PDF BUL54B 100mA transistor 800V 1A