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    BUP 202 Search Results

    BUP 202 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BUP 202 Infineon Technologies TRANS IGBT CHIP N-CH 1000V 12A 3TO-220 AB Original PDF
    BUP202 Infineon Technologies IGBT Original PDF
    BUP202 Siemens IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free) Original PDF
    BUP202 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUP202 Siemens IGBT Transistor Scan PDF
    BUP202SMD Infineon Technologies IGBT Transistor Original PDF

    BUP 202 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: BUP 202 IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Type VCE IC BUP 202 1000V 12A Pin 1 Pin 2 Pin 3 G C E Package Ordering Code TO-220 AB Q67078-A4401-A2 Maximum Ratings


    Original
    PDF O-220 Q67078-A4401-A2 Dec-06-1995

    C67078-A4401-A2

    Abstract: No abstract text available
    Text: BUP 202 IGBT • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Pin 2 Pin 1 G Type VCE IC BUP 202 1000V A Pin 3 C E Package Ordering Code TO-220 AB C67078-A4401-A2 Maximum Ratings Parameter Symbol


    Original
    PDF O-220 C67078-A4401-A2 Nov-20-1997 C67078-A4401-A2

    BUN DIODE

    Abstract: 400v 15A transistor module DIODE EVP 25 400v 15A igbt module 600v 30a IGBT CM15TF-24H
    Text: CM15TF-24H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Six-IGBT IGBTMOD H-Series Module 15 Amperes/1200 Volts A B Q Q R BuP P R EuP BvP BuN EuN BvN R EvP BwP EwP EvN BwN EwN P J U N S - DIA. (2 TYP.) V K H L W H E


    Original
    PDF CM15TF-24H Amperes/1200 BUN DIODE 400v 15A transistor module DIODE EVP 25 400v 15A igbt module 600v 30a IGBT CM15TF-24H

    600v 30a IGBT

    Abstract: BUN DIODE CIRCUIT DIAGRAM UPS welding circuit diagram CM30TF-24H DIODE EVP 25 igbt 30A
    Text: CM30TF-24H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Six-IGBT IGBTMOD H-Series Module 30 Amperes/1200 Volts A B C BuP EuP BvP EvP BwP EwP P J N E u v D w N BuN EuN S - DIA. (2 TYP.) BvN EvN M F R BwN EwN F R L K


    Original
    PDF CM30TF-24H Amperes/1200 600v 30a IGBT BUN DIODE CIRCUIT DIAGRAM UPS welding circuit diagram CM30TF-24H DIODE EVP 25 igbt 30A

    BUN DIODE

    Abstract: 600v 20a IGBT igbt 600v 20a CM20TF-24H
    Text: CM20TF-24H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Six-IGBT IGBTMOD H-Series Module 20 Amperes/1200 Volts A B Q Q R BuP P R EuP BvP BuN EuN BvN R EvP BwP EwP EvN BwN EwN P J U N S - DIA. (2 TYP.) V K H L W H E


    Original
    PDF CM20TF-24H Amperes/1200 BUN DIODE 600v 20a IGBT igbt 600v 20a CM20TF-24H

    BUN DIODE

    Abstract: DIODE EVP 28 CM50TF-12H bup transistor
    Text: CM50TF-12H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Six-IGBT IGBTMOD H-Series Module 50 Amperes/600 Volts A B C BuP EuP BvP EvP BwP EwP P J N E u v D w N BuN EuN S - DIA. (2 TYP.) BvN EvN M BwN EwN F R F R K R


    Original
    PDF CM50TF-12H Amperes/600 20-25kHz) BUN DIODE DIODE EVP 28 CM50TF-12H bup transistor

    buz 342 G

    Abstract: DIODE BUZ z347 BUP 312 diode z104 z349 z332a IGBT P213 DIODE BUZ 300 buz91a
    Text: Gehäuseübersicht Package Information N-Kanal Leistungstransistoren Forts. N Channel Power Transistors G D S G TO-220 AB VDS V 50 50 50 50 50 50 50 50 50 50 50 50 50 50 60 60 60 60 60 100 100 100 100 100 100 100 100 RDS(on) Ω 10 m 18 m 23 m 28 m 30 m


    Original
    PDF O-220 O-218 346S2 BUO-218 buz 342 G DIODE BUZ z347 BUP 312 diode z104 z349 z332a IGBT P213 DIODE BUZ 300 buz91a

    buz 350 equivalent

    Abstract: BUP 203 transistor buz 36 BUP 312 BUP 304 leistungstransistoren bup 401 datasheet transistor buz 350 bup 213 BUP 309
    Text: Typenübersicht Selection Guide • Leistungstransistoren Forts. ■ Typ VDS ■ Type V 50 50 60 50 50 60 50 50 50 50 100 100 100 100 200 200 200 200 500 500 500 1000 1000 1000 1000 400 400 400 60 60 50 50 50 ■ BUZ 10 ■ BUZ 10L ■ BUZ 10S2 ■ BUZ 11


    Original
    PDF O-220 O-218 buz 350 equivalent BUP 203 transistor buz 36 BUP 312 BUP 304 leistungstransistoren bup 401 datasheet transistor buz 350 bup 213 BUP 309

    thyristor Q 720 To220

    Abstract: siemens bsm200ga120dn2 bup transistor BSM50GD120DN2 BSM15GD siemens igbt BSM100GB120DN2 BSM30GD60DN2 BSM25GD120DN2 BSM20GD60DN2
    Text: APPLICATIONS POWER SEMICONDUCTORS Andreas Bachofner ● Mario Feldvoss ● Sven Konrad ● Thomas Laska Second-generation IGBTs: The mighty midgets Contemporary power electronics applications call for smaller, lighter and more rugged components. They must also consume less energy, have a wider dynamic


    Original
    PDF

    BUZ MOSFET

    Abstract: mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D
    Text: s Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs tp :/ se /ww m w ic .s on ie du me ct ns or .d / e/ ht Product Information 04. 98 Fast IGBTs S-FET SO-8 D-PAK I-PAK MOS-Transistors in alphanumeric order VDS [V] R DSon [⏲] VGS th [V] I D [A] Package


    Original
    PDF 615NV OT-223 20iemens B152-H6493-G5-X-7600 BUZ MOSFET mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D

    STR-G6551

    Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
    Text: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision


    Original
    PDF 2002-Sep. STR-G6551 STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312

    SIEMENS 1200

    Abstract: siemens dioden bup203 C67078-A4400-A2
    Text: SIEMENS IGBTLeistungstransistoren Bestellnummer Ordering code h LU Typ Type IGBT Power transistors A Gehäuse Package Bild Figure BUP 202 1000 12.0 C67078-A4401-A2 TO-220 AB 8b BUP 203 1000 21.0 C67078-A4402-A2 TO-220 AB 8b BUP 302 1000 12.0 C67078-A4205-A2


    OCR Scan
    PDF C67078-A4401-A2 C67078-A4402-A2 C67078-A4205-A2 C67078-A4202-A2 C67078-A4200-A2 O-220 O-218 SIEMENS 1200 siemens dioden bup203 C67078-A4400-A2

    bup transistor

    Abstract: siemens igbt ge 739 C67078-A4401-A2 BUP 202
    Text: SIEMENS IGBT Transistors BUP 202 BUP 302 • N channel • MOS input voltage-controlled • Low forward voltage drop • High switching speed • Very low tail current • Low temperature sensitivity • Avalanche-rated • Latch-up-free • Suitable free wheeling diode


    OCR Scan
    PDF O-220 C67078-A4401-A2 O-218 C67078-A4205-A2 202/BUP SIL02019 SIL02018 SII00325 bup transistor siemens igbt ge 739 C67078-A4401-A2 BUP 202

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BUP 202 IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Type ^CE h 1000V 12A BUP 202 Pin 1 Pin 2 Pin 3 G C E Package Ordering Code TO-220 AB Q67078-A4401-A2 Maximum Ratings


    OCR Scan
    PDF O-220 Q67078-A4401-A2 023SbOS GPT05155 235bD5

    7078a

    Abstract: bup 200 transistor
    Text: SIEMENS IGBT High Power Switch BUP 202 Preliminary Data vCE = 1000 v lc = 8 A • • • • • • • • • N channel MOS in pu t (volta ge -controlle d) Low forw ard voltage drop High sw itching speed Very low tail current Low tem perature sensitivity


    OCR Scan
    PDF 078-A 401-A 7078a bup 200 transistor

    BUP 312

    Abstract: BUZ22 276 603d BUZ 81 bup300 buz171 BUP314D BUZ,350 BUZ,271 BUZ90A
    Text: SIEMENS Typ Type Alphanumerische Typenliste List of Types in Alphanumerical Order Bestellnummer Ordering Code Seite Page Typ Type BUP 200 Q67078-A4400-A2 1125 • BUZ 11 A C67078-S1301 -A3 177 BUP200D Q67040-A4420-A2 1132 ■ BUZ 11 AL C67078-S1330-A3 186


    OCR Scan
    PDF BUP200D BUP314D BUP410D Q67078-A4400-A2 Q67040-A4420-A2 Q67078-A4401-A2 Q67078-A4402-A2 Q67040-A4407-A2 Q67078-A4203-A2 Q67078-A4205-A2 BUP 312 BUZ22 276 603d BUZ 81 bup300 buz171 BUZ,350 BUZ,271 BUZ90A

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BUP 202 IGBT Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Avalanche rated Type B U P 202 VCE ic 1000V 12A Pin 1 Pin 2 Pin 3 G C E Package Ordering Code TO-220 AB Q67078-A4401-A2 Maximum Ratings


    OCR Scan
    PDF O-220 Q67078-A4401-A2 BUP202 GPTD5155

    BUN DIODE

    Abstract: No abstract text available
    Text: m u m ex Powerex, Inc., 200 Hlllls Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 |- U BuP EuP U BvP EvP D 8wP EwP l ;-G 4 o O n n 0 4 n n - m S - DIA— (2 TYP.) BuN BuN E EuN i—i BvN EvN r—I — K- CM20TF-24H SÍX-IGBT IGBTMOD H-Series Module


    OCR Scan
    PDF CM20TF-24H Amperes/1200 BUN DIODE

    leistungstransistoren

    Abstract: bup314d buz 342 G siemens 230 95 O BUP 307D BUZ,350 BUZ,271 BUP400D bup313d BUP314
    Text: SIEMENS Gehäuseübersicht Package Information N-Kanal Leistungstransistoren N Channel Power Transistors D i A PN \ ° s TO-220 AB *D S ^ D S o n V 50 50 50 50 50 50 50 50 50 50 50 50 50 50 60 60 60 60 60 100 100 100 100 100 100 100 100 Q 10 18 23 28 m


    OCR Scan
    PDF O-220 BUZ12A BUZ11S2 BUZ10S2 O-218 346S2 BUP410D leistungstransistoren bup314d buz 342 G siemens 230 95 O BUP 307D BUZ,350 BUZ,271 BUP400D bup313d BUP314

    BUP 312

    Abstract: buz 91 f BUP 303 IGBT DIODE BUZ 537 BUP 203
    Text: SIEMENS Typenübersicht Selection Guide Leistungstransistoren Typ Type • BUZ 10 ■ BUZ 10L ■ BUZ10S2 ■ BUZ 11 ■ BUZ11A BUZ11S2 ■ BUZ 11 AL ■ BUZ 12 ■ BUZ12A ■ BUZ 12AL BUZ 20 BUZ 21 BUZ 21L BUZ 22 BUZ 30A BUZ 31 BUZ 31L BUZ 32 BUZ 40B


    OCR Scan
    PDF BUZ10S2 BUZ11A BUZ11S2 BUZ12A O-220 O-218 BUP 312 buz 91 f BUP 303 IGBT DIODE BUZ 537 BUP 203

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS IGBT Transistors • • • • • • • • • N channel MOS input voltage-controlled Low forward voltage drop High switching speed Very low tail current Low tem perature sensitivity Avalanche-rated Latch-up-free Suitable free wheeling diode


    OCR Scan
    PDF

    BUP 300

    Abstract: al394 Buz 304 s1348 S1338 buz 210 0C67O78-S311O-A2 BUZ325 S1314 S1313
    Text: SIEM ENS Bestellnummer Ordering Code Typ Type 0C67O47-A2O66-A2 BYP 103 0C67O47-A2O71-A2 BYP 102 0C67O47-A2O72-A2 BYP 101 0C67O47-A225O-A2 BYP 300 0C67O47-A2251-A2 BYP 301 0C67O47-A2252-A2 BYP 302 0C67O47-A2253-A2 BYP 303 0C67O47-A2254-A2 BYP 100 0C67O78-A1008-A8


    OCR Scan
    PDF 0C67O47-A2O66-A2 0C67O47-A2O71-A2 0C67O47-A2O72-A2 0C67O47-A225O-A2 0C67O47-A2251-A2 0C67O47-A2252-A2 0C67O47-A2253-A2 0C67O47-A2254-A2 0C67O78-A1008-A8 0C67O78-A1OO8-A9 BUP 300 al394 Buz 304 s1348 S1338 buz 210 0C67O78-S311O-A2 BUZ325 S1314 S1313

    BUZ332A

    Abstract: BUZ54A BUZ,350 BUZ p channel BUP 312 BUZ,271 Buz94 BUZ357 buz 91 f BUZ345
    Text: Typenübersicht Selection Guide SIEM ENS SIPMOS Power Transistors N Channel Power Transistors s > 7 X s TO-220 AB ^D S ^ D S o n V Q 50 50 50 50 50 50 50 50 50 18m 28m 30m 35m 40m 55m 70m 0.1 0.12 60 60 60 60 60 18m 40m 70m 0.10 0.15 100 100 100 100 100


    OCR Scan
    PDF VUT05152 O-220 O-218 O-204 346S2 BUZ332A BUZ54A BUZ,350 BUZ p channel BUP 312 BUZ,271 Buz94 BUZ357 buz 91 f BUZ345

    bsm10gd100dn1

    Abstract: BSM10GD100DN BTS 302 BSM10GD100 E6327 BUZ 324 E6288 eTS 410 siemens bsm 101 AR C67076-A2505-A52
    Text: SIEMENS Typ/Bestellnummern Type/Ordering Codes Ordering code Type BRT 11 H C67079-A1000-A6 BSM 50 GAL 100 D C67076-A2002-A2 BRT 11 H Option 7 C67079-A1040-A11 BSM 50 GAL 120 D C67076-A2010-A2 BRT 11 H Option 1 + 7 C67079-A1040-A17 BSM 50 GB 100 D C67076-A2100-A2


    OCR Scan
    PDF E-6288 BSM10GD100DN1 C67079-A1000-A6 C67079-A1040-A11 C67079-A1040-A17 C67079-A1001-A6 C67079-A1041-A5 C67079-A10436 E-6327 BSM10GD100DN BTS 302 BSM10GD100 E6327 BUZ 324 E6288 eTS 410 siemens bsm 101 AR C67076-A2505-A52