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    BUT12 TRANSISTOR Search Results

    BUT12 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    BUT12 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BUT12A

    Abstract: BUT12
    Text: BUT12/12A BUT12/12A High Voltage Power Switching Applications TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BUT12 : BUT12A 850 1000 V V Collector-Emitter Voltage


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    BUT12/12A O-220 BUT12 BUT12A BUT12A BUT12 PDF

    pt 4115 led driver

    Abstract: AN-7527 an7527 an5043 AN-7501 AN-7502 AN42045 transistor k 4110 PC100 NPN ML4425
    Text: BUT12/12A BUT12/12A High Voltage Power Switching Applications TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BUT12 : BUT12A 850 1000 V V Collector-Emitter Voltage


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    BUT12/12A O-220 BUT12 BUT12A KM4211-PB: KM4211 FAN5231-PB: pt 4115 led driver AN-7527 an7527 an5043 AN-7501 AN-7502 AN42045 transistor k 4110 PC100 NPN ML4425 PDF

    BUT12

    Abstract: No abstract text available
    Text: BUT12/12A BUT12/12A High Voltage Power Switching Applications 1 TO-220 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BUT12 : BUT12A 850 1000 V V Collector-Emitter Voltage


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    BUT12/12A O-220 BUT12 BUT12A BUT12 PDF

    BUT12

    Abstract: BUT12A
    Text: BUT12/12A BUT12/12A High Voltage Power Switching Applications TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BUT12 : BUT12A 850 1000 V V Collector-Emitter Voltage


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    BUT12/12A O-220 BUT12 BUT12A BUT12 BUT12A PDF

    BUT12A

    Abstract: BUT12
    Text: SavantIC Semiconductor Product Specification BUT12 BUT12A Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·High voltage ,high speed APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems PINNING PIN DESCRIPTION


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    BUT12 BUT12A O-220C BUT12 BUT12A PDF

    PC based dc motor speed control

    Abstract: BUT12 transistor but12
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUT12 DESCRIPTION •High Voltage ·High Speed Switching APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems ABSOLUTE MAXIMUM RATINGS Ta=25℃


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    BUT12 PC based dc motor speed control BUT12 transistor but12 PDF

    BUT12

    Abstract: BUT12A BUT12AF BUT12F
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BUT12; BUT12A Silicon diffused power transistors Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 1997 Aug 13 Philips Semiconductors Product specification Silicon diffused power transistors


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    BUT12; BUT12A O-220AB MBB008 MBK106 O-220AB) O-220 BUT12 BUT12A BUT12AF BUT12F PDF

    BUT12

    Abstract: BUT12AF BUT12A BUT12F
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BUT12; BUT12A Silicon diffused power transistors Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 1997 Aug 13 Philips Semiconductors Product specification Silicon diffused power transistors


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    BUT12; BUT12A O-220AB MBB008 MBK106 O-220AB) SCA55 137067/00/01/pp11 BUT12 BUT12AF BUT12A BUT12F PDF

    BUT12AF equivalent

    Abstract: BUT12 BUT12A BUT12AF BUT12F
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BUT12; BUT12A Silicon diffused power transistors Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 1997 Aug 13 Philips Semiconductors Product specification Silicon diffused power transistors


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    BUT12; BUT12A O-220AB MBB008 MBK106 O-220AB) SCA55 137067/00/01/pp11 BUT12AF equivalent BUT12 BUT12A BUT12AF BUT12F PDF

    NPN Transistor TO220 vcc 150V

    Abstract: BUT12 transistor IC 12A
    Text: SILICON DIFFUSED POWER TRANSISTOR BUT12 GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a metal envelope ,primarily for use in switching power circuits. TO-220 QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat Icsat VF tf PARAMETER


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    BUT12 O-220 16KHz 100mA 16KHz NPN Transistor TO220 vcc 150V BUT12 transistor IC 12A PDF

    BUT12

    Abstract: No abstract text available
    Text: BUT12/12 A NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH SWITCHING APPLICATIONS ABSOLUTE MAXIMUM RATINGS C haracteristic Collector Base Voltage Symbol : BUT12 Rating Unit 850 V 1000 V 400 V VCES : B UT12A Collector Emitter Voltage : BUT12 VcEO : B UT12A 450 V


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    BUT12/12 BUT12 UT12A UT12A BUT12 PDF

    Untitled

    Abstract: No abstract text available
    Text: BUT12/12A NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH SWITCHING APPLICATIONS ABSOLUTE MAXIMUM RATINGS Characteristic C ollector Base Voltage Sym bol BUT12 Rating Unit 850 V 1000 V 400 V 450 V V ceS BU T12A C ollecto r E m itter Voltage BUT12 V cE O BU T12A


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    BUT12/12A BUT12 300ns, PDF

    BUT12A

    Abstract: BUT12 PC100-W
    Text: BUT12/12A NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH SWITCHING APPLICATIONS ABSOLUTE MAXIMUM RATINGS C haracteristic C ollector Base Voltage Sym bol BUT12 Rating BU T12A Unit 850 V 1000 V 400 V 450 V V ceS C ollector E m itter Voltage BUT12 V cE O BU T12A


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    BUT12/12A BUT12 BUT12A 100mA, 10perature 300ns, BUT12A PC100-W PDF

    but12 transistor

    Abstract: No abstract text available
    Text: BUT12/12A NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH SWITCHING APPLICATIONS ABSOLUTE MAXIMUM RATINGS Characteristic Collector Base Voltage Symbol BUT12 BUT12A Rating Unit 850 V 1000 V 400 450 8 V V 20 4 A A 100 150 W VcES Collector Emitter Voltage BUT12 BUT12A


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    BUT12/12A BUT12 BUT12A BUT12A 300uS, 100mA, but12 transistor PDF

    BUT12A

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon diffused power transistors BUT12; BUT12A DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a T0-220AB package. APPLICATIONS • Converters • Inverters • Switching regulators


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    T0-220AB BUT12; BUT12A BUT12 BUT12A PDF

    TRANSISTOR but12

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon diffused power transistors BUT12; BUT12A DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a TO-220AB package. F o i APPLICATIONS • Converters • Inverters • Switching regulators


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    O-220AB BUT12; BUT12A MBB008 MBK106 O-22QAB) BUT12 BUT12A TRANSISTOR but12 PDF

    BUT12

    Abstract: BUT12A
    Text: DISCRETE SEMICONDUCTORS BUT12; BUT12A Silicon diffused power transistors Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 1997 Aug 13 PHILIPS Philips S em ico n d u cto rs Printed from www.freetradezone.com, a service of Partminer,


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    BUT12; BUT12A O-22QAB O-220 O-220 BUT12 BUT12A PDF

    BUT12

    Abstract: 125OC BUT12A T0220AB
    Text: Philips Semiconductors Product specification Silicon diffused power transistors BUT12; BUT12A High-voltage, high-speed, glass-passivated npn pow er transistors in a T 0 2 2 0 envelope intended fo r use in converters, inverters, sw itching regulators, m o to r control systems, etc.


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    BUT12; BUT12A T0220 BUT12 8UT12A T0220AB. 7Z21446 7110A5b 00777CH 125OC BUT12A T0220AB PDF

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE bbS3T3i o o E a m a b*1E J> td3 BUT12 BUT12A SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a TO220 envelope intended fo r use in converters, inverters, switching regulators, m otor control systems, etc.


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    BUT12 BUT12A bb53c 00Efl4S3 PDF

    L25-M

    Abstract: l25m BUT 1 BUT12
    Text: BUT12/12 A NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH SWITCHING APPLICATIONS TO-220 ABSOLUTE MAXIMUM RATINGS Rating Symbol Characteristic C ollector-Base Voltage B U T12 850 VcES . B U T 12 A i C ollector Em itter Voltage : B U T 12 C ollector C urrent Pulse


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    BUT12/12 O-220 100mA, L25-M l25m BUT 1 BUT12 PDF

    BU2506DF

    Abstract: 1500v 02xs t199 5A 800V BU508
    Text: 42 Power Devices High Speed, High Voltage Transistors in order of current rating (cont.) Package Outline V CE (sat) tf typ at lc lC(DC)<1> V CES V CEO max. at Iq/I b (Inductive Load) BUT12 BUT12A TO-220AB 8A 850V 1000V 400V 450V 1.5V at 6A/1.2A 1.5V at 5A/1 A


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    BUT12 BUT12A O-220AB OT-93 OT-199 OT-186A OT-227B1 OT-227B1 200ns BU2506DF 1500v 02xs t199 5A 800V BU508 PDF

    BUT12

    Abstract: BUT12A BUT12A/B T0220AB
    Text: N AUER PHILIPS/DISCRETE bTE ]> • [^53=131 G02fl41ñ TG3 BUT12 BUT12A SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn pow er transistors in a T 0 2 2 0 envelope intended fo r use in converters, inverters, sw itching regulators, m o to r c o n tro l systems, etc.


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    BUT12 BUT12A T0220 T0220AB. BUT12A BUT12A/B T0220AB PDF

    BUT12A

    Abstract: BUT12 MGE246
    Text: DISCRETE SEMICONDUCTORS BUT12; BUT12A Silicon diffused power transistors Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 Philips S em ico n d u cto rs I C m i n e r . c o m E l e c t r o n i c - L i b r a r y S e r v i c e C o p y R i g h t 2003


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    BUT12; BUT12A O-22QAB O-220AB) O-220 O-220 BUT12 MGE246 PDF

    BUT11AX

    Abstract: TO-220AB 220ab BU2506DF BU2506DX sot199 bu508df
    Text: Concise Catalogue 1996 Philips Semiconductors POWER SEMICONDUCTORS High-voltage and switching NPN power transistors HIGH-VOLTAGE AND SWITCHING NPN POWER TRANSISTORS type number package 42 18 40 50 BUX86P BUX84F BUX84 BUW84 SOT82 SOT 186 TO-220AB SOT82 20 32


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    BUX86P BUX84F BUX84 BUW84 BUT211X BUT11F BUT11 BUT211 BUW11 BUT18 BUT11AX TO-220AB 220ab BU2506DF BU2506DX sot199 bu508df PDF