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    BUZ 32 SMD Search Results

    BUZ 32 SMD Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    1812SMS-47NG Coilcraft Inc General Purpose Inductor, 47uH, 2%, 1 Element, Air-Core, SMD, 1915, SMD Visit Coilcraft Inc Buy
    1812SMS-68NG Coilcraft Inc General Purpose Inductor, 68uH, 2%, 1 Element, Air-Core, SMD, 1915, SMD Visit Coilcraft Inc Buy
    5315TC-105XGBD Coilcraft Inc General Purpose Inductor, 1000uH, 2%, 1 Element, SMD Visit Coilcraft Inc Buy
    5315TC-374XGBD Coilcraft Inc General Purpose Inductor, 370uH, 2%, 1 Element, SMD Visit Coilcraft Inc Buy
    5315TC-704XGBD Coilcraft Inc General Purpose Inductor, 700uH, 2%, 1 Element, SMD Visit Coilcraft Inc Buy

    BUZ 32 SMD Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BUZ32 SMD Infineon Technologies Power MOSFET, 200V, DPAK, RDSon=0.4 ?, 9.5A, NL Original PDF
    BUZ32SMD Infineon Technologies SIPMOS Power Transistor Scan PDF
    BUZ 32 SMD Infineon Technologies SIPMOS Power Transistor Scan PDF

    BUZ 32 SMD Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    C67078-S1353-A2

    Abstract: No abstract text available
    Text: BUZ 104 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code


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    O-220 C67078-S1353-A2 C67078-S1353-A2 PDF

    104L

    Abstract: C67078-S1358-A2
    Text: BUZ 104L SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/dt rated • Low on-resistance • 175 °C operating temperature Pin 1 • also in TO-220 SMD available Pin 2 G Pin 3 D S Type VDS ID RDS on


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    O-220 C67078-S1358-A2 104L C67078-S1358-A2 PDF

    Q67040-S4009-A2

    Abstract: SPP31N05 BUZ 32 SMD
    Text: BUZ 103 S SPP31N05 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 103 S 55 V


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    SPP31N05 O-220 Q67040-S4009-A2 30/Jan/1998 Q67040-S4009-A2 SPP31N05 BUZ 32 SMD PDF

    Q67040-S4008-A2

    Abstract: SPP28N05L EAS120
    Text: BUZ 103 SL SPP28N05L SIPMOS Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code


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    SPP28N05L O-220 Q67040-S4008-A2 30/Jan/1998 Q67040-S4008-A2 SPP28N05L EAS120 PDF

    transistor buz 36

    Abstract: BUZ 81 KS57C21632 KS57P21632 SAM47
    Text: KS57C21632/P21632 1 PRODUCT OVERVIEW PRODUCT OVERVIEW OVERVIEW The KS57C21632 single-chip CMOS microcontroller has been designed for high performance using Samsung's newest 4-bit CPU core, SAM47 Samsung Arrangeable Microcontrollers . With an up-to-896-dot LCD direct drive capability, and flexible 8-bit timer/counters, the KS57C21632 offers an


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    KS57C21632/P21632 KS57C21632 SAM47 up-to-896-dot 100-pin 0100B 1001B, transistor buz 36 BUZ 81 KS57P21632 SAM47 PDF

    c4204

    Abstract: C4304 transistor c4204 KS57C4104 KS57C4204 KS57C4304 SAM47
    Text: KS57C4104/P4104/C4204/P4204/C4304/P4304 1 PRODUCT OVERVIEW PRODUCT OVERVIEW OVERVIEW The KS57C4104/KS57C4204/KS57C4304 single-chip CMOS microcontroller has been designed for very high performance using Samsung's newest 4-bit CPU core, SAM47 Samsung Arrangeable Microcontroller .


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    KS57C4104/P4104/C4204/P4204/C4304/P4304 KS57C4104/KS57C4204/KS57C4304 SAM47 42-pin 44-pin c4204 C4304 transistor c4204 KS57C4104 KS57C4204 KS57C4304 SAM47 PDF

    transistor buz 36

    Abstract: S3C72G9 S3P72G9 SAM47
    Text: S3C72G9/P72G9 1 PRODUCT OVERVIEW PRODUCT OVERVIEW OVERVIEW The S3C72G9 single-chip CMOS microcontroller has been designed for high performance using Samsung's newest 4-bit CPU core, SAM47 Samsung Arrangeable Microcontrollers . With an up-to-896-dot LCD direct drive capability, and flexible 8-bit timer/counters, the S3C72G9 offers an


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    S3C72G9/P72G9 S3C72G9 SAM47 up-to-896-dot 100-pin S3P72G9. S3P72G transistor buz 36 S3P72G9 SAM47 PDF

    4 MHz Oscillator

    Abstract: transistor buz 36 SAM47 KS57C2916 KS57P2916
    Text: KS57C2916/P2916 MICROCONTROLLER 1 PRODUCT OVERVIEW PRODUCT OVERVIEW OVERVIEW The KS57C2916 single-chip CMOS microcontroller has been designed for high performance using Samsung's newest 4-bit CPU core, SAM47 Samsung Arrangeable Microcontrollers . With an up-to-704-dot LCD direct drive capability, and flexible 8-bit timer/counter, the KS57C2916 offers an


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    KS57C2916/P2916 KS57C2916 SAM47 up-to-704-dot 80-pin 0000B, 0100B 4 MHz Oscillator transistor buz 36 SAM47 KS57P2916 PDF

    BUZ104S

    Abstract: 104S E3045 Q67040-S4007-A2 12J8
    Text: BUZ 104S SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Drain-Source on-state resistance Continuous drain current Enhancement mode • Avalanche rated 55 V RDS on 0.08 Ω ID 13.5 A • dv/dt rated • 175 ˚C operating temperature


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    BUZ104S P-TO263-3-2 Q67040-S4007-A6 BUZ104S E3045 P-TO220-3-1 Q67040-S4007-A2 E3045A 104S E3045 12J8 PDF

    4 MHz Oscillator

    Abstract: BUZ 72 A S3C7295 S3P7295 SAM47
    Text: S3C7295/P7295 1 PRODUCT OVERVIEW PRODUCT OVERVIEW OVERVIEW The S3C7295 single-chip CMOS microcontroller has been designed for high performance using Samsung's newest 4-bit CPU core, SAM47 Samsung Arrangeable Microcontrollers . With an up-to-704-dot LCD direct drive capability, and flexible 8-bit timer/counter, the S3C7295 offers an


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    S3C7295/P7295 S3C7295 SAM47 up-to-704-dot 80-pin S3P7295. S3P7295 4 MHz Oscillator BUZ 72 A S3P7295 SAM47 PDF

    103S

    Abstract: BUZ103S E3045 Q67040-S4009-A2
    Text: BUZ 103S SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Drain-Source on-state resistance RDS on 0.036 Ω Continuous drain current ID Enhancement mode • Avalanche rated 55 V 31 A • dv/dt rated • 175 ˚C operating temperature


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    BUZ103S P-TO263-3-2 Q67040-S4009-A6 BUZ103S E3045 P-TO220-3-1 Q67040-S4009-A2 E3045A 103S E3045 PDF

    KS57C5116

    Abstract: p5116s P5116 KS57-series KS57P5116 SAM47
    Text: KS57C5116/P5116 MICROCONTROLLER 1 PRODUCT OVERVIEW PRODUCT OVERVIEW The KS57C5116/P5116 single-chip CMOS microcontroller has been designed for high-performance using Samsung's newest 4-bit CPU core, SAM47 Samsung Arrangeable Microcontrollers . The KS57P5116 is a


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    KS57C5116/P5116 SAM47 KS57P5116 16-kbyte KS57C5116. KS57C5116/P5116 64-pin KS57C5116 p5116s P5116 KS57-series SAM47 PDF

    smd rgs

    Abstract: SMD TRANSISTOR FL smd code buz 7C SMD TRANSISTOR SMD TRANSISTOR qd SM-38 transistor SMD DIODE 681 smd transistor ds smd transistor ds 65 DIODE BUZ smd
    Text: Infineon technologies BUZ 32 SMD SIPMOS Power T ransistor • N channel • Enhancement mode • Avalanche-rated tab Pin 1 Pin 2 Pin 3 D Type Vds 1D ^DS(on) Package BUZ 32 SMD 200 V 9.5 A 0.4 f i d 2p a k Ordering Code Q67042-S4133 Maximum Ratings Parameter


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    q67042-s4133 smd rgs SMD TRANSISTOR FL smd code buz 7C SMD TRANSISTOR SMD TRANSISTOR qd SM-38 transistor SMD DIODE 681 smd transistor ds smd transistor ds 65 DIODE BUZ smd PDF

    A4t 29 smd

    Abstract: smd a4t
    Text: BUZ 32 In fin e o n t*chriQlogt*s SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 32 Vds f lDS on 200 V 9.5 A 0.4 n • Package Ordering Code TO-220 AB C67078-S1310-A2 Maximum Ratings Symbol Parameter Continuous drain current


    OCR Scan
    O-220 C67078-S1310-A2 S35bQ5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T A4t 29 smd smd a4t PDF

    transistor buz 104

    Abstract: No abstract text available
    Text: SIEMENS BUZ 104 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated k • dv/df rated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available Type BUZ 104 Vbs 50V b 17.5 A ^bS on 0.1 Û Package


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    O-220 C67078-S1353-A2 transistor buz 104 PDF

    transistor SMD t70

    Abstract: BUZ104
    Text: SIEMENS BUZ 104 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/df rated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available Type BUZ104 Vfcs Io flbSfon Package Ordering Code 50 V


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    O-220 BUZ104 C67078-S1353-A2 a23Sbà GPT05155 fl235b05 00fi4Sc transistor SMD t70 BUZ104 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BUZ 104L SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/df rated • Low on-resistance • 175 °C operating temperature • also in TO-220 SMD available Type BUZ104L Vos 50 V b 17.5 A flDS on


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    O-220 BUZ104L 78-S1358-A2 0235bG5 0064bD4 G0fl4b05 0235bOS PDF

    Untitled

    Abstract: No abstract text available
    Text: BUZ 344 I nf ineon technologie» SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type ^DS to flDS on Package Ordering Code BUZ 344 100 V 50 A 0.035 n TO-218AA C67078-S3132-A2 Maximum Ratings Parameter Symbol Continuous drain current


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    O-218AA C67078-S3132-A2 S35bQ5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T PDF

    Untitled

    Abstract: No abstract text available
    Text: BUZ 30A Infineon Iftchnologi«* SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type VDS b ^DS on Package Ordering Code BUZ 30A 200 V 21 A 0.13 £i TO-220 AB C67078-S1303-A3 Maximum Ratings Parameter Symbol Continuous drain current


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    O-220 C67078-S1303-A3 S35bQ5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T PDF

    Untitled

    Abstract: No abstract text available
    Text: BUZ 21L Infineo n t « c h n o l o g •es SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level Type Vds % ^DS on Package Ordering Code BUZ21 L 100 V 21 A 0.085 ü TO-220 AB C67078-S1338-A2 Maximum Ratings Parameter


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    BUZ21 O-220 C67078-S1338-A2 S35bQ5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T PDF

    RPY 86

    Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
    Text: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ­


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: BUZ 73 Infineon technologies SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vbs b ^DS on Package Ordering Code BUZ 73 200 V 7A 0.4 £2. TO-220 AB C67078-S1317-A2 Maximum Ratings Parameter Symbol Continuous drain current


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    O-220 C67078-S1317-A2 0235bG5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T PDF

    Untitled

    Abstract: No abstract text available
    Text: BUZ 341 Infineon technologies SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated ' fé VPT0ÌI56 3 Pin 1 Pin 3 Pin 2 G S D Type Vds b flDS on Package Ordering Code BUZ 341 200 V 33 A 0.07 n TO-218AA C67078-S3128-A2 Maximum Ratings


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    O-218AA C67078-S3128-A2 S35bQ5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T PDF

    Untitled

    Abstract: No abstract text available
    Text: BUZ 72AL Infineon te c h n o lo g ie s SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level Type V^s BUZ 72 AL 100 V 9A flDS on Package Ordering Code 0.25 n TO-220 AB C67078-S1327-A3 Maximum Ratings Parameter Symbol


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    O-220 C67078-S1327-A3 S35bQ5 SQT-89 B535bQ5 D13377Ã B235bG5 PDF