BUZ71A
Abstract: transistor buz71a STripFET
Text: BUZ71A N - CHANNEL 50V - 0.1Ω - 13A -TO-220 STripFET POWER MOSFET T YPE BUZ71A • ■ ■ ■ ■ V DSS R DS o n ID 50 V < 0.12 Ω 13 A TYPICAL RDS(on) = 0.1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE
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BUZ71A
-TO-220
175oC
O-220
BUZ71A
transistor buz71a
STripFET
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BUZ71A
Abstract: No abstract text available
Text: BUZ71A N - CHANNEL 50V - 0.1Ω - 13A TO-220 STripFET POWER MOSFET TYPE BUZ71A • ■ ■ ■ ■ V DSS R DS on ID 50 V < 0.12 Ω 13 A TYPICAL RDS(on) = 0.1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE
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BUZ71A
O-220
175oC
BUZ71A
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buz71a
Abstract: transistor buz71a BUZ71A DATASHEET datasheet BUZ71A datecode G1 BUZ71A ST BUZ71A S
Text: BUZ71A N - CHANNEL 50V - 0.1Ω - 13A TO-220 STripFET POWER MOSFET T YPE BUZ71A • ■ ■ ■ ■ V DSS R DS on ID 50 V < 0.12 Ω 13 A TYPICAL RDS(on) = 0.1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE
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BUZ71A
O-220
175oC
buz71a
transistor buz71a
BUZ71A DATASHEET
datasheet BUZ71A
datecode G1
BUZ71A ST
BUZ71A S
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BUZ71A
Abstract: BUZ71AFI
Text: BUZ71A BUZ71AFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS R DS on ID BUZ71A BUZ71AFI 50 V 50 V < 0.12 Ω < 0.12 Ω 16 A 11 A • ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC
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BUZ71A
BUZ71AFI
100oC
175oC
O-220
ISOWATT220
BUZ71A
BUZ71AFI
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BUZ71A
Abstract: BUZ71AFI
Text: BUZ71A BUZ71AFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS R DS on ID BUZ71A BUZ71AFI 50 V 50 V < 0.12 Ω < 0.12 Ω 16 A 11 A • ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC
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BUZ71A
BUZ71AFI
100oC
175oC
O-220
ISOWATT220
BUZ71A
BUZ71AFI
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BUZ71A
Abstract: BUZ71AFI
Text: BUZ71A BUZ71AFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS R DS on ID BUZ71A BUZ71AFI 50 V 50 V < 0.12 Ω < 0.12 Ω 16 A 11 A • ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC
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BUZ71A
BUZ71AFI
100oC
175oC
O-220
ISOWATT220
BUZ71A
BUZ71AFI
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complementary of irf830
Abstract: IRF630 complementary irf630 irf640 irf540n irf640 IRF640 irf510 IRFP150 Irfp250 irfp460 IRF640 IRFP150N IRF610 complementary
Text: Power MOSFET Selection Trees TM N-CHANNEL STANDARD GATE MOSFETs BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 HUF75307T3ST HUF75309D3 HUF75309D3S HUF75309P3 HUF75309T3ST HUF75321D3 HUF75321D3S HUF75321P3 HUF75321S3S HUF75329D3
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BUZ11
BUZ71
BUZ71A
BUZ72A
HRF3205
HRF3205S
HRFZ44N
HUF75307D3
HUF75307D3S
HUF75307P3
complementary of irf830
IRF630 complementary
irf630 irf640
irf540n irf640
IRF640 irf510
IRFP150
Irfp250 irfp460
IRF640
IRFP150N
IRF610 complementary
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SSH6N80
Abstract: rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50
Text: Sales type BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 IRF620 IRF630 IRF640 IRF730 IRF740 IRF820 IRF830 IRF840 IRFBC30 IRFBC40 IRFZ40 MTP3055E STB10NA40 STB10NB20 STB10NB50 STB11NB40 STB15N25 STB16NB25 STB18N20 STB19NB20 STB30N10 STB36NE03L
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BUZ10
BUZ11
BUZ11A
BUZ71
BUZ71A
BUZ72A
BUZ80A
IRF520
IRF530
IRF540
SSH6N80
rfp60n06
IRF3205 IR
BUK417-500AE
SFP70N03
BUZ91A
2SK2717
STMicroelectronics
BUZ22
IXFH13N50
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irf540n irf640
Abstract: IRF630 complementary IRF840 complementary irf630 irf640 IRF730 complementary irfp460 complementary MOSFET IRF540n complementary Complementary MOSFETs buz11 IRF9540 complementary Irfp250 irfp460
Text: MOSFET Selection Trees Power MOSFET Products N-CHANNEL MOSFETs N-CHANNEL STANDARD GATE MOSFETs BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 HUF75307T3ST HUF75309D3 HUF75309D3S HUF75309P3 HUF75309T3ST HUF75321D3 HUF75321D3S
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BUZ11
BUZ71
BUZ71A
BUZ72A
HRF3205
HRF3205S
HRFZ44N
HUF75307D3
HUF75307D3S
HUF75307P3
irf540n irf640
IRF630 complementary
IRF840 complementary
irf630 irf640
IRF730 complementary
irfp460 complementary
MOSFET IRF540n complementary
Complementary MOSFETs buz11
IRF9540 complementary
Irfp250 irfp460
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Untitled
Abstract: No abstract text available
Text: , One, TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212)227-6005 FAX: (973) 376-8960 BUZ71 BUZ71A Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FETs 12 AMPERES •DSIon) 0.12 OHMS 60 VOLTS
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BUZ71
BUZ71A
O-220AB
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BUZ71A
Abstract: TB334
Text: BUZ71A Data Sheet December 2001 13A, 50V, 0.120 Ohm, N-Channel Power MOSFET Features • 13A, 50V This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers,
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BUZ71A
TA9770.
O-220ABopment.
BUZ71A
TB334
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BUZ71
Abstract: BUZ71A TB334 TO 220AB Mosfet TA9770 transistor buz71a
Text: BUZ71A Semiconductor Data Sheet 13A, 50V, 0.120 Ohm, N-Channel Power MOSFET October 1998 File Number 2419.1 Features • 13A, 50V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS ON = 0.120Ω (BUZ71 field effect transistor designed for applications such as
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BUZ71A
BUZ71
TA9770.
BUZ71A
TB334
TO 220AB Mosfet
TA9770
transistor buz71a
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transistor buz71a
Abstract: BUZ71A TB334
Text: BUZ71A Data Sheet June 1999 13A, 50V, 0.120 Ohm, N-Channel Power MOSFET Features This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching
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BUZ71A
TA9770.
BUZ71of
transistor buz71a
BUZ71A
TB334
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Untitled
Abstract: No abstract text available
Text: BUZ71A Data Sheet 13A, 50V, 0.120 Ohm, N-Channel Power MOSFET June 1999 File Number 2419.2 Features • 13A, 50V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS ON = 0.120Ω (BUZ71 field effect transistor designed for applications such as
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BUZ71A
BUZ71
TA9770.
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Z71A
Abstract: No abstract text available
Text: Æ 7 SGS-THOMSON BUZ71A * 7 # , Riflô g^ i[Li TrmQ(gs N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS ^DS(on BUZ71A 50 V 0.12 fi Id 13 A • ULTRA FAST SWITCHING • LOW DRIVE ENERGY FOR EASY DRIVE • COST EFFECTIVE INDUSTRIAL APPLICATIONS:
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BUZ71A
00A//iS
Z71A
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON BUZ71A BUZ71AFI M N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V dss R d S on Id BUZ71A BUZ71 AFI 50 V 50 V 0.1 2 il 0.1 2 Q 16 A 11 A . • . . . ■ . AVALANCHE RU G G EDN ESS TECHNO LO G Y 100% AVALANCHE TESTED REPETITIVE AVALANC HE DATA AT 100°C
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OCR Scan
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BUZ71A
BUZ71AFI
BUZ71
O-220
ISOWATT22Q
ATT220
BUZ71A/BUZ71AFI
GC34400
GC201BQ
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buz71
Abstract: BUZ71A
Text: BUZ71, BUZ71A f T S B c o n ix in c o r p o r a te d N-Channel Enhancement Mode Transistors TO-22QAB TOP VIEW o PRODUCT SUMMARY PART NUMBER V BR DSS r DS(ON) •d (V) (n ) (A) BUZ71 50 0.10 14 BUZ71A 50 0.12 13 1 GATE 2 DRAIN (Connected to TAB) 3 SOURCE ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)
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OCR Scan
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BUZ71,
BUZ71A
O-22QAB
BUZ71
BUZ71A
10peration
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Untitled
Abstract: No abstract text available
Text: ¿57 TYP E S G S -T H O M S O N ¡m e ra « N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS V BUZ71A BUZ71AFI BUZ71A b u z 7 1 AFI dss 50 V 50 V R D S o n < 0.12 < 0.12 a a Id 16 A 11 A • TYPICAL RDS(on) = 0.1 Q . . AVALANCHE RUGGED TECHNOLOGY
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OCR Scan
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BUZ71A
BUZ71AFI
BUZ71A/BUZ71AFI
ISQWATT220
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PDF
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Untitled
Abstract: No abstract text available
Text: BUZ71A N - CHANNEL 50V - 0.1Î2 - 13A -TO-220 STripFET POWER MOSFET TYPE BUZ71 A V R D S o n Id < 0.12 Q. 13 A dss 50 V . • TYPICAL RDS(on) =0.1 AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED . HIGH CURRENT CAPABILITY . 175°C OPERATING TEMPERATURE
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BUZ71A
-TO-220
BUZ71
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PDF
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Untitled
Abstract: No abstract text available
Text: BUZ71A S em iconductor Data Sheet June 1999 13A, 50V, 0.120 Ohm, N-Channel Power MOSFET File Number 2419.2 Features • 13A, 50V This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers,
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BUZ71A
TA9770.
BUZ71ALU
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PDF
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Untitled
Abstract: No abstract text available
Text: *57 SGS-THOMSON iLiOM iQ £I buz7ia BUZ71AFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V dss R DS(on) Id BUZ71A BUZ71AFI 50 V 50 V < 0.12 a < 0.12 a 16 A 11 A • . . ■ ■ . ■ TYPICAL RDS(on) = 0.1 £2 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED
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BUZ71A
BUZ71AFI
BUZ71
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BUZ71A
Abstract: 0120S
Text: in t e is il BUZ71A Data Sheet June 1999 13A, 50V, 0.120 Ohm, N -Channel Power M O SFET File Num ber 2419.2 Features • 13A, 50V This is an N-Channel enhancem ent mode silicon gate power field effect transistor designed for applications such as • rDS ON ~ 0.120S2
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BUZ71A
120S2
TA9770.
BUZ71A
0120S
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BUZ71A
Abstract: BUZ71
Text: BUZ71A O HARRIS N -Channel Enhancem ent-M ode Power Field-Effect Transistor August 1991 Package Features T0-220AB • 13A, 50V TO P VIEW • rD S on = 0 -1 2 f l • SOA is Power-Dissipation Limited DRAIN (FLANGE) • Nanosecond Switching Speeds u • Linear Transfer Characteristics
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BUZ71A
T0-220AB
BUZ71A
BUZ71
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buz71a
Abstract: No abstract text available
Text: PowerMOS transistor _ N AMER PHILIPS/DISCRETE OLE D BUZ71A • hhS3131 D D m M C H 5 ■ T-3 1 - 1/ May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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BUZ71A
hhS3131
O220AB
T-39-11
bb53T31
buz71a
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