BV SMD Search Results

BV SMD Result Highlights (5)

Part	Manufacturer	Description
BLM15PX121BH1D	Murata Manufacturing Co Ltd	FB SMD 0402inch 120ohm POWRTRN
BLM15PX181SH1D	Murata Manufacturing Co Ltd	FB SMD 0402inch 180ohm POWRTRN
BLM21HE802SN1L	Murata Manufacturing Co Ltd	FB SMD 0805inch 8000ohm NONAUTO
BLM15PX330BH1D	Murata Manufacturing Co Ltd	FB SMD 0402inch 33ohm POWRTRN
BLM15PX600SH1D	Murata Manufacturing Co Ltd	FB SMD 0402inch 60ohm POWRTRN

BV SMD Price and Stock

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Bourns Inc CRT1206-BV-57R6ELF Thin Film Precision Chip Resistor - 1/4 W - 57.6 ohms ±0.1% - ±5ppm/°C - 200V - SMD 1206
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	CRT1206-BV-57R6ELF					1 - 10 - 100 - 1000 - 10000 $0.519	Buy Now
Bourns Inc CRT0603-BV-3010ELF Thin Film Precision Chip Resistor - 1/10 W - 301 ohms ±0.1% - ±5ppm/°C - 75V - SMD 0603
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	CRT0603-BV-3010ELF					1 - 10 - 100 - 1000 - 10000 $0.3414	Buy Now
Bourns Inc CRT0805-BV-2401ELF Thin Film Precision Chip Resistor - 1/8 W - 2.40 Kohm ±0.1% - ±5ppm/°C - 150V - SMD 0805
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	CRT0805-BV-2401ELF					1 - 10 - 100 - 1000 - 10000 $0.4096	Buy Now
Bourns Inc CRT1206-BV-1100ELF Thin Film Precision Chip Resistor - 1/4 W - 110 ohms ±0.1% - ±5ppm/°C - 200V - SMD 1206
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	CRT1206-BV-1100ELF					1 - 10 - 100 - 1000 - 10000 $0.519	Buy Now
Bourns Inc CRT0603-BV-1002ELF Thin Film Precision Chip Resistor - 1/10 W - 10.0 Kohm ±0.1% - ±5ppm/°C - 75V - SMD 0603
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	CRT0603-BV-1002ELF					1 - 10 - 100 - 1000 - 10000 $0.3414	Buy Now

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BV SMD Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
transistor A25 SMD Abstract: rl 254 diode Text: Photocoupler SMD/DIP Type High Isolation Voltage Single Transistor Type Multi Photocoupler Series PS2561-1,-2, PS2561L-1,-2 Features High isolation voltage BV = 5 000 Vr.m.s.: standard products BV = 3 750 Vr.m.s.: VDE0884 approved products Option High collector to emitter voltage (VCEO = 80 V)	Original	PDF	PS2561-1 PS2561L-1 VDE0884 PS2561-1 transistor A25 SMD rl 254 diode
transistor A25 SMD Abstract: smd transistor H-R Text: Photocoupler SMD/DIP Type High Isolation Voltage Single Transistor Type Multi Photocoupler Series PS2501-1,-2,-4, PS2501L-1,-2,-4 Features High isolation voltage BV = 5 000 Vr.m.s. High collector to emitter voltage (VCEO = 80 V) High-speed switching (tr = 3	Original	PDF	PS2501-1 PS2501L-1 PS2501-4 PS2501-1 transistor A25 SMD smd transistor H-R
p-channel mosfet Abstract: 2N7522 p-channel 200V 2n752 iGSS 80 nA Vgs 0v Text: Preliminary Data Sheet Repetitive Avalanche and dv/dt Rated MOSFET Transistor P-Channel 2N7522 200Volt, 0.505 Ω , RAD Hard MOSFET Package: SMD-0.5 R5 Product Summary Hex Size Technology BV DSS RDS on ID 3 RAD Hard -200V 0.505 Ω -8.0A Absolute Maximum Ratings	Original	PDF	2N7522 200Volt, -200V -160V, p-channel mosfet 2N7522 p-channel 200V 2n752 iGSS 80 nA Vgs 0v
2N7524 Abstract: smd 58a transistor 6-pin Zero-Gate Voltage Drain Current 60-VOLT 2n752 mosfet nA idss Text: Preliminary Data Sheet Repetitive Avalanche and dv/dt Rated MOSFET Transistor P-Channel 2N7524 60 Volt, 0.015 Ω , RAD Hard MOSFET Package: SMD-2 R5 Product Summary Hex Size Technology BV DSS RDS on ID 6 RAD Hard -60V 0.015 Ω -75*A Absolute Maximum Ratings	Original	PDF	2N7524 2N7524 smd 58a transistor 6-pin Zero-Gate Voltage Drain Current 60-VOLT 2n752 mosfet nA idss
2N7519 Abstract: No abstract text available Text: Preliminary Data Sheet Repetitive Avalanche and dv/dt Rated MOSFET Transistor P-Channel 2N7519 30 Volt, 0.035 Ω , RAD Hard MOSFET Package: SMD-0.5 R5 Product Summary Hex Size Technology BV DSS RDS on ID 3 RAD Hard -30V 0035 Ω -22*A Absolute Maximum Ratings	Original	PDF	2N7519 2N7519
556cn Abstract: MMQA20VTI MMQA20VT1 TA525 motorola diode smb Text: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document bv MMQA5V6T1/D DATA — MMQA5V6TI 5.6 Volt SC=59 Quad Monolithic Common Anode I ~ Transient Voltage Suppressor for ESD Protection This quad monolithic silicon voltage suppressor is designed for applications	Original	PDF	SC-59 140W1-2M7 0W5214315 2PHXW051 lZ951MPERWLlTH0 556cn MMQA20VTI MMQA20VT1 TA525 motorola diode smb
MT 6236 Abstract: Transistor WIG 10NO2Z woy transistor AN569 zener diod MARKING S04 diod zener Text: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document bv MMSF1ONO22D DATA DesignerSTM Data Sheet - I I Medium Power Surface Mount Products TMOS Single N-Channel with Monolithic Zener ESD Protected Gate EZFETSTM are an advanced series of power MOSFETS which	Original	PDF	MMSF1ONO22D 2W609 MT 6236 Transistor WIG 10NO2Z woy transistor AN569 zener diod MARKING S04 diod zener
*14315 transistor Abstract: MMDF3P03HDR2 AN569 MMDF3P03HD dual slope adc motorola notes FET MOSFET transistor "" Text: MOTOROLA SEMICONDUCTOR Advance —. TECHNICAL Order this document bv MMDF3P03HD/D DATA Information ~ Medium Power Surface Mount Products TMOS Dual P-Channel Field Effect ~ansistors Dual HDTMOS devices are an advanced series of power MOSFETS which utilize Motorola’s	Original	PDF	MMDF3P03HD/D 14W1-2 852-2M29296 MMDF3P03HDm *14315 transistor MMDF3P03HDR2 AN569 MMDF3P03HD dual slope adc motorola notes FET MOSFET transistor ""
Tny 178 PN Abstract: TNY284-290 smd zener diode 12b 40 tny 286 pn TNY288 Text: TNY284-290 TinySwitch-4 Family Energy-Efficient, Off-Line Switcher With Line Compensated Overload Power Product Highlights Lowest System Cost with Enhanced Flexibility • 725 V rated MOSFET • Increases BV de-rating margin • Line compensated overload power – no additional components	Original	PDF	TNY284-290 Tny 178 PN TNY284-290 smd zener diode 12b 40 tny 286 pn TNY288
TNY287 Abstract: TNY288 TNY285 tny 175 pn TNY287-288 Tny 178 PN tny 290 TNY290P TNY289-290 TNY287D Text: TNY284-290 TinySwitch-4 Family Energy-Efficient, Off-Line Switcher With Line Compensated Overload Power Product Highlights Lowest System Cost with Enhanced Flexibility • 725 V rated MOSFET • Increases BV de-rating margin • Line compensated overload power – no additional components	Original	PDF	TNY284-290 TNY287 TNY288 TNY285 tny 175 pn TNY287-288 Tny 178 PN tny 290 TNY290P TNY289-290 TNY287D
MMBD201 Abstract: BD201 bd2010 BD301 MMBD2010 318D-03 MMBD101 MMBD2010T1 DIODE WJ SOt23 MMBD3010T1 Text: MOTOROLA SEMICONDUCTOR — TECHNICAL Order this document bv MMBDIOIOLT1/D DATA MMBDIOIOLTI MMBD2010T~ Switching Diode Pad of the GreenMneTM Portfolio of devices with energy+onsewing traits. This switching diode has the following features: Very Low Leakage s 500 PA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair	Original	PDF	MMBD2010T~ 2PHX34593F+ MMBD201 BD201 bd2010 BD301 MMBD2010 318D-03 MMBD101 MMBD2010T1 DIODE WJ SOt23 MMBD3010T1
Untitled Abstract: No abstract text available Text: Low VF SMD Schottky Barrier Diode CDBQC0240L-HF I o = 200 mA V R = 40 Volts RoHS Device Halogen Free 0402C/SOD-923F Features 0.041 1.05 0.037(0.95) - Low forward voltage. - Designed for mounting on small surface. - Extremely thin package. - Majority carrier conduction.	Original	PDF	CDBQC0240L-HF 0402C/SOD-923F 0402/SOD-923F MIL-STD-750 QW-G1112
STS Bv 1500 Abstract: No abstract text available Text: BV 8, BV 12, BV 16 High Voltage Si-Rectifier Si-Hochspannungs-Gleichrichter Nominal current Nennstrom 350 mA Repetitive peak reverse voltage Periodische Spitzensperrspannung 7000. 15000 V Plastic case Kunststoffgehäuse 0 6.3 x 21 [mm] Weight approx. Gewicht ca.	OCR Scan	PDF	UL94V-0 R0D1RS14 DGG174 000017S STS Bv 1500
Untitled Abstract: No abstract text available Text: BV 4, BV 6 Si-Hochspannungs-Gleichrichter High Voltage Si-Rectifier 50 mA Nominal current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung 3 000. 5 000 V Plastic case Kunststoffgehäuse D O -15 Weight approx. Gewicht ca. 0.4 g Plastic material has UL classification 94V-0	OCR Scan	PDF	UL94V-0 R0D1RS14 000017S

1ff TRANSISTOR SMD MARKING CODE Abstract: smd transistor 5c sot-23 NB ad smd transistor SMD TRANSISTOR MARKING 6C SMD TRANSISTOR MARKING 5c npn smd dual diode marking code AH sot-23 BC548 TRANSISTOR SMD smd diode ZENER marking code BC marking code diode C1J SMD SMD TRANSISTOR MARKING c1p Text: CENTRAL SENICONDUCTOR 50E D • DDDQS11 3Gb ■ CEN SMD Transistors SOT-23 Case U.S. Specification Preferred Series 350mW T Y P E NO. DESCRIPTION BVCBq (VOLTS) MW BV qeo (VOLTS) MIN BVebq (VOLTS) MIN Icbo 1^ V M (nA) (VOLTS) MAX MIN CMPT918 CMPT2222A CMPT2369	OCR Scan	PDF	DDDQS11 OT-23 350mW CMPT918 CMPT2222A CMPT2369 CMPT2484 CMPT2907A CMPT3640 CMPT3904 1ff TRANSISTOR SMD MARKING CODE smd transistor 5c sot-23 NB ad smd transistor SMD TRANSISTOR MARKING 6C SMD TRANSISTOR MARKING 5c npn smd dual diode marking code AH sot-23 BC548 TRANSISTOR SMD smd diode ZENER marking code BC marking code diode C1J SMD SMD TRANSISTOR MARKING c1p
ATV2500BL-25JI Abstract: SMD fuse BA Text: ATV2500B/ BV Features • • • • • • • • • High Performance, High Density Programmable Logic Device Typical 9 ns Pin-to-Pin Delay Fully Connected Logic Array With 416 Product Terms Flexible Output Macrocell 48 Flip-Flops - Two per Macrocell	OCR Scan	PDF	ATV2500B/ ATV2500BL ATV2500BVL ATV2500H/L 40-Pin Military/883C ATV2500BVL-30JC ATV2500BVL-30 ATV2500BVL-30LC ATV2500BL-25JI SMD fuse BA
2N2222 Abstract: 6C556 BCw610 Text: SMDTransistors SOT-23 Case 350mW Proelectron Series— Confd TYPE NO. BC8586 DESCRIPTION PNP LOW NOISE v n o VOLTS BV ceo (VOLTS) BVebo (VOLTS) MW MM MM m MAX 30 30 50 15 fCBO (^ ci (VOLTS) ftpE « MM MAX 30 220 475 V« (VOLTS) Vc í (SA T)« (mA> (VOUS)	OCR Scan	PDF	OT-23 350mW BC8586 BC858C BC859 BC85SA BC859B BC859C 8C860 8C860A 2N2222 6C556 BCw610
f20 fuse Abstract: ATV750BL-20DM Text: ATV750B/BV Features • Advanced, High Speed Programmable Logic Device Improved Performance • 10 ns Tpd , 100 MHz operation Enhanced Logic Flexibility Backward Compatible with ATV750/L Software and Hardware • New Flip-Flop Features D- or T-Type Product Term or Direct Input Pin Clocking	OCR Scan	PDF	ATV750B/BV ATV750/L 24-Pln ATV750BL ATV750BVL 24-Pln, 24-Lead 28-Lead ATVL-25G M/883 f20 fuse ATV750BL-20DM
MOSFET Selection Guide Abstract: TO257AA t0-205af TO254AA FSj264 Text: Rad Hard Power MOSFET Selection Guide N-Channel PACKAGE BV d s s V rDS(ON) (£!) ' d (A) FSL110D, FSL110R PART NUMBER T0-205AF 100 0.600 3.5 FSL13AOD, FSL13AOR TO-205AF 100 0.180 9 FSL23AOD, FSL23AOR TO-205AF 200 0.350 6 FSL23A4D, FSL23A4R T0-205AF 250 0.480	OCR Scan	PDF	FSL110D, FSL110R FSL13AOD, FSL13AOR FSL23AOD, FSL23AOR FSL23A4D, FSL23A4R FSL130D, FSL130R MOSFET Selection Guide TO257AA t0-205af TO254AA FSj264
I-348 Abstract: i348 TIR31 i346 IRFM360 IRFM360D IRFM360U I*348 9712A Text: Data Sheet No. PD-9.712A INTERNATIONAL RECTIFIER i R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR ài IRFM360 N-CHANNEL 400 Volt, 0.20 Ohm HEXFET Product Summary T h e HEXFE T® technology is the key to International Part N um ber BV q s S	OCR Scan	PDF	IRFM360 IRFM360D IRFM360U O-254 MIL-S-19500 I-348 i348 TIR31 i346 IRFM360 IRFM360U I*348 9712A
DAC8408BT Abstract: D-10 E1513 cpvf Text: R E V IS IO N S rr LTR APPROVED DATE VR-MO-DA DESCRIPTION ri REV SHEET REV SH EET REV STATUS OF SH EETS REV SHEET 1 3 4 PREPARED BY PMIC N/A STANDARDIZED MILITARY DRAWING 2 . O J fe tJ i— CHJ ^ Bv 5 6 7 8 AMSC N/A 11 12 13 „ DEFENSE ELECTRONICS SUPPLY CENTER	OCR Scan	PDF	E1513 5962-8967801XX DAC8408AT/883 5962-8967802XX DAC8408BT/883 19M-550-S47 DAC8408BT D-10 E1513 cpvf
B60C 800 Si Abstract: 0/B60C 800 Si Text: 1 I n t e r n a t io n a l R e c t i f i e r G o v e rn m e n t a n d S p a c e P ro d u c ts Paît Number 2 BV[)SS (Volts) RDS(on) (Ohms) Ip • Tc°25° (Amps) Id 9 TC«100" (Amps) Total Dos* Rating Rads (Si) Pd O Tc=25* (Watts) 15 7 15.3 12.7 6.0 24.3	OCR Scan	PDF	IRHN7254SE IRHN7450SE IRHNA73b IRHNA7460SE IRHN7C50SE IRHNA7264SE IRH72545E IRHM7264SE IRH7450SE IRH7C50SE B60C 800 Si 0/B60C 800 Si
Multimeter tektronix dmm 155 Abstract: No abstract text available Text: Pomoi Bv Your Side Or At Your fingertips Filled With Quality for The World’s Leading Test Instrumentation M o d e l 4 5 5 0 A S e m iM o d u la r O s c illo s c o p e P ro n e d e s ig n a llo w s c o m p o n e n t re p la c e m e n t :0 100. 2 0 0 a n d	OCR Scan	PDF
CS 20A RoHS Abstract: No abstract text available Text: 2. S c h e m a t ic : 1. M e c h a n ic a l D im e n s io n s : S e conda ry 0 .0 1 8 ± 0 .0 0 2 C 0 .2 5 0 Max E 0.100 XFMRS r> X F 0 1 9 6 2 -2 0 A • YYWW bV in 03 x CM 1 2 o □ 3 o u CM 6 O CQ K o o 4 P rim a ry 3. Electrical Specifications: Y Y jZ	OCR Scan	PDF	XF01962 MIL-STD-202G, UL94V-0 E151556 102mm) 100KHz 3000Vac, UL1950 May-14-07 CS 20A RoHS

BV SMD Search Results

BV SMD Result Highlights (5)

BV SMD Price and Stock

Bourns Inc CRT1206-BV-57R6ELF

Bourns Inc CRT0603-BV-3010ELF

Bourns Inc CRT0805-BV-2401ELF

Bourns Inc CRT1206-BV-1100ELF

Bourns Inc CRT0603-BV-1002ELF

BV SMD Datasheets Context Search

transistor A25 SMD

transistor A25 SMD

p-channel mosfet

2N7524

2N7519

556cn

MT 6236

*14315 transistor

Tny 178 PN

TNY287

MMBD201

Untitled

STS Bv 1500

Untitled

1ff TRANSISTOR SMD MARKING CODE

ATV2500BL-25JI

2N2222

f20 fuse

MOSFET Selection Guide

I-348

DAC8408BT

B60C 800 Si

Multimeter tektronix dmm 155

CS 20A RoHS