WSD501H
Abstract: BV45
Text: WSD501H * “G” Lead Pb -Free 1 2 SOD-323 WEITRON http://www.weitron.com.tw WSD501H MAXIMUM RATING Characteristics Symbol WSD 501H Unit Breakdown Voltage BV 45 Volts Continuous Reverse Voltage VR 40 Volts Average Rectified Forward Current IO 100 mAmps Peak Forward Surge Current
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WSD501H
OD-323
100mA
WSD501H
BV45
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BV 1 501
Abstract: SNK500-2x12-3 kaschke 096.906 BV 501 kaschke SP-E 16 75KV K2006 Kaschke sp-e 13 4
Text: Technical Data Sheet Part designation: Customer part no.: Kaschke Göttingen SP-E 13/6 SNK500-2x12-3 d:/bv/zn1864.dwg Customer: EI 3,81 a. 4 5 Uout 12V 7 6 Uout 12V 8 Uin 1 Remarks : AII 8 1 0,6 11,43±0,3 AI AIII EII EIII 10,16±0,3 max.15,1 max.17,5 max.14,3
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SNK500-2x12-3
/bv/zn1864
E13/6
K2006
44kHz
50Hz/2s)
BV 1 501
SNK500-2x12-3
kaschke 096.906
BV 501
kaschke SP-E 16
75KV
Kaschke sp-e 13 4
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IRF 504
Abstract: EB 203 D DALE PT 30-2 VISHAY MARKING 2U eb 102 vishay EB eb 203 EB 202 D EB marking code marking code EB 38
Text: IHA Vishay Dale Filter Inductors High Current FEATURES • • • • STANDARD ELECTRICAL SPECIFICATIONS MODEL IHA-101 IHA-102 IHA-103 IHA-104 IHA-105 IHA-201 IHA-202 IHA-203 IHA-204 IHA-205 IHA-301 IHA-302 IHA-303 IHA-304 IHA-305 IHA-501 IHA-502 IHA-503
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MIL-I-23053/5,
IHA-101
IHA-102
IHA-103
IHA-104
IHA-105
IHA-201
IHA-202
IHA-203
IHA-204
IRF 504
EB 203 D
DALE PT 30-2
VISHAY MARKING 2U
eb 102
vishay EB
eb 203
EB 202 D
EB marking code
marking code EB 38
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nec 2401
Abstract: DE150-501N04A 200W MOSFET POWER AMP DE-150-501N04 rf power mosfet 50MEG kp60
Text: DE150-501N04A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient
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DE150-501N04A
nec 2401
DE150-501N04A
200W MOSFET POWER AMP
DE-150-501N04
rf power mosfet
50MEG
kp60
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400P
Abstract: DE475-501N44A Directed Energy
Text: Directed Energy, Inc. An ♦ ♦ ♦ ♦ ♦ DE475-501N44A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 30MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
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DE475-501N44A
30MHz
400P
DE475-501N44A
Directed Energy
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nec 2401
Abstract: 501N04 QGS 80W 30 ohm mosfet High-Speed Switching 100mhz bd9883 DE150-501N04A Directed Energy Directed RF POWER MOSFET DE-150-501N04
Text: Directed Energy, Inc. An DE150-501N04A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR
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DE150-501N04A
nec 2401
501N04
QGS 80W 30 ohm
mosfet High-Speed Switching 100mhz
bd9883
DE150-501N04A
Directed Energy
Directed
RF POWER MOSFET
DE-150-501N04
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DE375-501N21A
Abstract: "RF MOSFETs" 400P
Text: DE375-501N21A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 50MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ
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DE375-501N21A
50MHz
DE375-501N21A
"RF MOSFETs"
400P
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DE475-501N44A
Abstract: 400P PIN diode SPICE model
Text: DE475-501N44A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 30MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ
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DE475-501N44A
30MHz
DE475-501N44A
400P
PIN diode SPICE model
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DE275-501N16A
Abstract: 92-0002 DE275-501N16
Text: Directed Energy, Inc. An DE275-501N16A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ
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DE275-501N16A
DE275-501N16A
92-0002
DE275-501N16
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400P
Abstract: DE375-501N21A mosfet SPICE MODEL
Text: Directed Energy, Inc. An ♦ ♦ ♦ ♦ ♦ DE375-501N21A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 50MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
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DE375-501N21A
50MHz
400P
DE375-501N21A
mosfet SPICE MODEL
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DE275-501N16A
Abstract: KP58
Text: DE275-501N16A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient
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DE275-501N16A
DE275-501N16A
KP58
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DE275X2-501N16A
Abstract: No abstract text available
Text: Directed Energy, Inc. IXYS Company An ♦ ♦ ♦ ♦ ♦ DE275X2-501N16A RF Power MOSFET Preliminary Data Sheet Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching The DE275X2-501N16A is a matched pair of RF power MOSFET devices in
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DE275X2-501N16A
DE275X2-501N16A
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200W MOSFET POWER AMP
Abstract: DE150-501N04A rf power mosfet 900 v 9 amp mosfet PIN diode SPICE model
Text: DE150-501N04A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient
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DE150-501N04A
501N04A
200W MOSFET POWER AMP
DE150-501N04A
rf power mosfet
900 v 9 amp mosfet
PIN diode SPICE model
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Untitled
Abstract: No abstract text available
Text: DE275X2-501N16A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching The DE275X2-501N16A is a matched pair of RF power MOSFET devices in a common source configuration. The device is optimized for push-pull or parallel operation in RF generators and amplifiers at frequencies to >65 MHz.
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DE275X2-501N16A
DE275X2-501N16A
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DE375-501N21A
Abstract: 400P PIN diode SPICE model
Text: DE375-501N21A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 50MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ
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DE375-501N21A
50MHz
DE375-501N21A
400P
PIN diode SPICE model
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DE275-501N16A
Abstract: 501N16A gsm Handset Circuit Diagram PIN diode SPICE model
Text: DE275-501N16A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Ideal for Class C, D, & E Applications Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500
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DE275-501N16A
DE275-501N16A
501N16A
gsm Handset Circuit Diagram
PIN diode SPICE model
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DE475-501N44A
Abstract: 10-15V 400P PIN diode SPICE model
Text: DE475-501N44A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 30MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ
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DE475-501N44A
30MHz
DE475-501N44A
10-15V
400P
PIN diode SPICE model
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Untitled
Abstract: No abstract text available
Text: ePurge X Solid State Purge Controller Applied Analytics Data Sheet No. DS-501A — Revised 19 June 2013 An ultra-slim, next generation purging & pressurization device. In order to prevent fire or explosion, instrument enclosures are often “purged” of flammable gas. Before cycling power to the
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DS-501A
DS-501A:
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Untitled
Abstract: No abstract text available
Text: WSD501H WEITRON http://www.weitron.com.tw WSD501H MAXIMUM RATING Characteristics Symbol WSD 501H Unit Breakdown Voltage BV 45 Volts Continuous Reverse Voltage VR 40 Volts Average Rectified Forward Current IO 100 mAmps Peak Forward Surge Current 8.3ms1/2 Sine Wave
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WSD501H
100mA
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0E12
Abstract: MOSFET Termination Structure
Text: Low Voltage Super Junction MOSFET Simulation and Experimentation Timothy Henson, Joe Cao International Rectifier 233 Kansas St, El Segundo, CA 90245 USA as presented at ISPSD Conference , April 2003 Abstract. The application of Super Junction concepts to a low voltage power MOSFET is
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Untitled
Abstract: No abstract text available
Text: MIL-C-5015 Connectors MS-E/F/R/ER Contact Arrangements Face View Pin Insert LEGEND Resilient only Resilient & Plastic ¢ High Volume Layouts - readily available from Cannon Distributors ¢ ¢ ¢ ¢ B A B A D C B Shell Size No. of Contacts Service Rating
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MIL-C-5015
14S-9
12SA10
12S-3
12S-4
10SLA4
10SL-3
10SL-4
10S-2
14S-1
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in4606
Abstract: IN4150 1N4606 1N4150 1N4450 1N4607 1N460B D035 DT230C DT230H
Text: SIGNAL DIODES 100 - 200 M A TYPES 200 - 400 M A TYPES @ Part Number Ir BV 1OOü A Min. V 1N4451 40 1N4607 85 Vf @ 25°C Max. <nA) 1 Max. @ V r (V) (V) @ Ir(mA) Co @ OV (pf) trr Package T»pe (nsec) 50 30 1.00 300 6 10 100 50 1.00 400 4 10 1 Package Outline No.
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100/iA
1N4150*
1N4450
1N4606
100/tA
1N445I
1N4607
1N460B
DT230C
DT230H
in4606
IN4150
1N4150
D035
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CB345
Abstract: MU Thomson-CSF diode CY501H 1N5181 CB-323 Thomson-CSF diodes de redressement Diodes de redressement
Text: high voltage rectifier diodes diodes de redressem ent h au te tension Types 100 m A •o Vrrm ■f s m 10 ms mA (V) (A) vF max (VI / if THOMSON-CSF ■r /V r r m V(BR)R max (mA) (^à) min (V) 100 100 10 60000 100000 Case / Tgm i) = 25°C Tj = 125°C CY 501 H
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CY751
CB-329)
CB-323-
CB326|
CB-3311
CB343--CB345)
CB345
MU Thomson-CSF diode
CY501H
1N5181
CB-323
Thomson-CSF diodes de redressement
Diodes de redressement
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CSR 8811
Abstract: HM511001AP6 HM511001 HM511001ajp
Text: H M 5 1 1 0 0 1 A S e r ie s 1,048,576-Word x 1-Bit CMOS Dynamic RAMI • DESCRIPTION H M 511001A P Series The Hitachi HM511001A series is a CMOS dynamic RAM organized 1,048,576word x 1-bit. HM511001A has realized higher density, higher performance and vari
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HM511001A
576-Word
18-pin
20-pin
CSR 8811
HM511001AP6
HM511001
HM511001ajp
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