BV4 transistor
Abstract: transistor BV4
Text: MMBTSB624LT1 PNP Silicon Epitaxial Planar Transistor For use in small type equipments, especially recommended or hybrid circuit and other applications The transistor is subdivided into five groups BV1, BV2, BV3, BV4 and BV5, according to its DC current gain.
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MMBTSB624LT1
OT-23
100mA
700mA
700mA,
PW350
BV4 transistor
transistor BV4
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TRANSISTOR BV3
Abstract: BV4 transistor BV4 pnp bv-1 transistor bV2
Text: MMBTSB624 PNP Silicon Epitaxial Planar Transistor For use in small type equipments, especially recommended or hybrid circuit and other applications The transistor is subdivided into five groups BV1, BV2, BV3, BV4 and BV5, according to its DC current gain.
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MMBTSB624
OT-23
100mA
700mA
700mA,
TRANSISTOR BV3
BV4 transistor
BV4 pnp
bv-1
transistor bV2
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BV4 transistor
Abstract: TRANSISTOR BV3 BV4 pnp MMBTSB624LT1
Text: MMBTSB624LT1 PNP Silicon Epitaxial Planar Transistor For use in small type equipments, especially recommended or hybrid circuit and other applications The transistor is subdivided into five groups BV1, BV2, BV3, BV4 and BV5, according to its DC current gain.
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MMBTSB624LT1
OT-23
100mA
700mA
700mA,
PW350
BV4 transistor
TRANSISTOR BV3
BV4 pnp
MMBTSB624LT1
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TRANSISTOR BV3
Abstract: No abstract text available
Text: MMBTSB624 PNP Silicon Epitaxial Planar Transistor For use in small type equipments, especially recommended or hybrid circuit and other applications The transistor is subdivided into five groups BV1, BV2, BV3, BV4 and BV5, according to its DC current gain.
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MMBTSB624
OT-23
100mA
700mA
700mA,
TRANSISTOR BV3
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2SB624
Abstract: No abstract text available
Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Pb High DC current gain.hFE: 200TYP Lead-free VCE=-1.0V,IC=-100mA z 2SB624 Complimentary to the 2SD596. APPLICATIONS z Audio frequency amplifier. z Switching appilication.
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2SB624
200TYP
-100mA)
2SD596.
OT-23
BL/SSSTC014
2SB624
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sot-23 bv4
Abstract: 2SB624 BV4 sot23 TRANSISTOR BV3 marking BV4 SOT23 BV2 2SD596 BV3 marking BV5 SOT-23 transistor BV4
Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Pb High DC current gain.hFE: 200TYP Lead-free VCE=-1.0V,IC=-100mA z 2SB624 Complimentary to the 2SD596. APPLICATIONS z Audio frequency amplifier. z Switching appilication.
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2SB624
200TYP
-100mA)
2SD596.
OT-23
BL/SSSTC014
sot-23 bv4
2SB624
BV4 sot23
TRANSISTOR BV3
marking BV4
SOT23 BV2
2SD596
BV3 marking
BV5 SOT-23
transistor BV4
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BV4 pnp
Abstract: BV4 transistor 2SB624 2SD596
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SB624 TRANSISTOR PNP SOT-23 1.BASE 2.EMITTER FEATURES 3.COLLECTOR High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) Complimentary to 2SD596. z z MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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OT-23
2SB624
OT-23
-100mA)
2SD596.
-100mA
-700mA
-70mA
-10mA
BV4 pnp
BV4 transistor
2SB624
2SD596
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2SB624
Abstract: BV4 transistor marking BV4 transistor bv5
Text: 2SB624 2SB624 TRANSISTOR PNP SOT-23-3L FEATURES 1. BASE Power dissipation 3. COLLECTOR W (Tamb=25℃) 2. 80¡ À0. 05 0. 95¡ À0. 025 Collector current ICM: -0.7 A Collector-base voltage -30 V V(BR)CBO: Operating and storage junction temperature range 0. 35
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2SB624
OT-23-3L
-100mA
-700mA
-70mA
-10mA
2SB624
BV4 transistor
marking BV4
transistor bv5
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2SB624
Abstract: TRANSISTOR BV3 BV4 transistor
Text: Transys Electronics L I M I T E D SOT-23-3L Plastic-Encapsulated Transistors 2SB624 TRANSISTOR PNP SOT-23-3L FEATURES 1. BASE Power dissipation 3. COLLECTOR W (Tamb=25℃) 2. 80¡ À0. 05 0. 95¡ À0. 025 Collector current -0.7 A ICM: Collector-base voltage
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OT-23-3L
2SB624
OT-23-3L
-100mA
-700mA
-70mA
-10mA
2SB624
TRANSISTOR BV3
BV4 transistor
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SB624 SOT-23 TRANSISTOR PNP FEATURES 1.BASE 2.EMITTER 3.COLLECTOR High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) Complimentary to 2SD596. z z MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
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OT-23
2SB624
OT-23
-100mA)
2SD596.
-100mA
-700mA
-70mA
-10mA
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hFE-200 transistor PNP
Abstract: TRANSISTOR BV3
Text: 2SB624 SOT-23-3L Transistor PNP SOT-23-3L 1.BASE 2.EMITTER 2.92 3.COLLECTOR 0.35 1.17 Features 2.80 1.60 High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) Complimentary to 2SD596. 0.15 1.90 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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2SB624
OT-23-3L
OT-23-3L
-100mA)
2SD596.
-700mA
-700mA,
-70mA
-10mA
hFE-200 transistor PNP
TRANSISTOR BV3
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sot-23 bv2
Abstract: marking BV4 2SB624
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SB624 TRANSISTOR PNP SOT-23-3L FEATURES 1. BASE Power dissipation 3. COLLECTOR W (Tamb=25℃) 2. 80¡ À0. 05 0. 95¡ À0. 025 Collector current -0.7 A ICM: Collector-base voltage
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OT-23-3L
2SB624
OT-23-3L
-100mA
-700mA
-70mA
-10mA
sot-23 bv2
marking BV4
2SB624
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2SB624
Abstract: 2SD596 BV4 transistor
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SB624 SOT-23-3L TRANSISTOR PNP FEATURES 1.BASE High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) Complimentary to 2SD596. z z 2.EMITTER 3.COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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OT-23-3L
2SB624
OT-23-3L
-100mA)
2SD596.
-100mA
-700mA
-700mA,
-70mA
-10mA
2SB624
2SD596
BV4 transistor
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hFE-200 transistor PNP
Abstract: 2SB624
Text: 2SB624 SOT-23 Transistor PNP SOT-23 1.BASE 2.EMITTER 3.COLLECTOR Features High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA) Complimentary to 2SD596. MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage
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2SB624
OT-23
OT-23
-100mA)
2SD596.
-700mA
-70mA
-10mA
-100A,
hFE-200 transistor PNP
2SB624
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sot-23 bv2
Abstract: 2SB624 2SD596
Text: 2SB624 SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER SOT-23 3 PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD 1 DESRIPTION 2 The2SB624 is designed for use in small type equipements especially 1. 1.BASE 2.EMITTER 3.COLLECTOR mended for hybrid integrated circuit and other applications.
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2SB624
OT-23
The2SB624
-100mA)
2SD596
sot-23 bv2
2SB624
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Untitled
Abstract: No abstract text available
Text: 2SB624 PNP Epitaxial Planar Transistors COLLECTOR SOT-23 3 3 P b Lead Pb -Free 1 BASE 1 2 2 EMITTER ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Symbol Limits Unit Collector-Base Voltage VCBO -30 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEBO -5 V
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2SB624
OT-23
16-Aug-05
OT-23
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2SB624
Abstract: No abstract text available
Text: 2SB624 PNP Epitaxial Planar Transistors 3 P b Lead Pb -Free 1 2 SC-59 ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Symbol Limits Unit Collector-Base Voltage VCBO -30 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEBO -5 V Collector Current IC -700 mA
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2SB624
SC-59
-500mA
-250mA
-200mA
-100mA
16-Aug-05
SC-59
2SB624
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bv5 300
Abstract: 2SB624
Text: 2SB624 PNP Epitaxial Planar Transistors 3 P b Lead Pb -Free 2 1 SC-59 ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Symbol Limits Unit Collector-Base Voltage VCBO -30 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEBO -5 V Collector Current IC -700 A Collector Power Dissipation
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2SB624
SC-59
-500mA
-250mA
-200mA
-100mA
16-Aug-05
SC-59
bv5 300
2SB624
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Bv4 smd transistor
Abstract: MARKING SMD PNP TRANSISTOR BV5 TRANSISTOR SMD BV4 CSB624 equivalent transistor smd 3 em 7 sot-23 MARKING bv SMD TRANSISTOR BV5
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTOR CSB624 PIN CONFIGURATION PNP 1 = BASE 2 = EM ITTER 3 = COLLECTOR SOT-23 Formed SMD Package 3 1 2 Designed for use in Small type Equipments Especially Recommended or Hybrid Circuit and
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ISO/TS16949
CSB624
OT-23
CSD596
C-120
CSB624Rev
160803E
Bv4 smd transistor
MARKING SMD PNP TRANSISTOR BV5
TRANSISTOR SMD BV4
CSB624
equivalent transistor smd 3 em 7
sot-23 MARKING bv
SMD TRANSISTOR BV5
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Bv4 smd transistor
Abstract: TRANSISTOR SMD BV4 MARKING SMD PNP TRANSISTOR BV5 Bv3 smd transistor smd transistor bv4 MARKING SMD PNP TRANSISTOR BV TRANSISTOR SMD BV CSB624 TRANSISTOR BV3 SMD TRANSISTOR BV5
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001Certified Manufacturer PNP SILICON PLANAR EPITAXIAL TRANSISTOR CSB624 PIN CONFIGURATION PNP 1 = BASE 2 = EM ITTER 3 = COLLECTOR SOT-23 Formed SMD Package 3 1 2 Designed for use in Small type Equipments Especially Recommended or Hybrid Circuit and
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ISO/TS16949
9001Certified
CSB624
OT-23
CSD596
C-120
CSB624Rev
160803E
Bv4 smd transistor
TRANSISTOR SMD BV4
MARKING SMD PNP TRANSISTOR BV5
Bv3 smd transistor
smd transistor bv4
MARKING SMD PNP TRANSISTOR BV
TRANSISTOR SMD BV
CSB624
TRANSISTOR BV3
SMD TRANSISTOR BV5
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D1802
Abstract: TRANSISTOR BV3 2SB624A 2SD596A nec marking power amplifier
Text: DATA SHEET SILICON TRANSISTOR 2SB624A AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES PACKAGE DRAWING Unit: mm • Complementary to NEC 2SD596A NPN Transistor. • High DC Current Gain: hFE = 200 TYP. (VCE = −1.0 V, IC = −100 mA)
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2SB624A
2SD596A
D1802
TRANSISTOR BV3
2SB624A
nec marking power amplifier
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2SB624
Abstract: No abstract text available
Text: SEC / ELECTRON DEVICE SILICON TRANSISTOR 2SB624 / AUDIO FREQUENCY POWER AMPLIFIER PIMP SILICON EPITAXIAL TRANSISTOR M IN I MOLD D E SC R IPTIO N PACK AG E D IM E N S IO N S The 2SB624 is designed for use in small type equipments especially recom mended fo r hybrid integrated circuit and other applications.
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2SB624
2SB624
2SD596
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2SB624
Abstract: 2SD596
Text: NEC SILICON TRANSISTOR 2SB624 ^3£CTR0N DEVICE AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR M IN I MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SB624 is designed fo r use in small type equipments especially recom in millimeters 2.8 + 0.2
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2SB624
2SB624
2SD596
NECTOKJ22686
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2S8624
Abstract: BV4 transistor
Text: 2 S B 6 2 4 .2 S B 6 2 4 R Audio Frequency Power Amplifier PNP Silicon Epitaxial Transistor • C o m p lim e n ta ry to 2 S D 5 9 6 , 2 S D 5 9 6 R P A C K A G E D IM E N S IO N S • High D C C u rre n t G ain: h FE = 2 0 0 T Y P . V CE = - 1 .0 V , lc !
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2SB624,
2SB624R
-100m
2SB624
2S8624
BV4 transistor
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