BVW 2800 Search Results

BVW 2800 Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
UPA2800T1L-E1-AY		Renesas Electronics Corporation	Switching N-Channel Power MOSFET, HVSON, /Embossed Tape
2SK2800-E		Renesas Electronics Corporation	Nch Single Power Mosfet 60V 40A 20Mohm To-220Ab
ISL28006FH20Z-T7		Renesas Electronics Corporation	Micropower, Rail to Rail Input Current Sense Amplifier with Voltage Output
ISL28006FH20Z-T7A		Renesas Electronics Corporation	Micropower, Rail to Rail Input Current Sense Amplifier with Voltage Output
ISL28005FH-20EVAL1Z		Renesas Electronics Corporation	Micropower, Rail-to-Rail Input, Fixed Gain Current Sense Amp Evaluation Boards

BVW 2800 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: LH28F020SU-L FEATURES • 256K x 2M 256K x 8 Flash Memory 3 2 - P IN T S O P 8 Bit Configuration • 5 V Write/Erase (3.3 V Vcc) r • Minimum 2.7 V Read Capability - 180 ns Maximum Access Time Ag / a ,3C 4 i • System Performance Enhancement - Erase Suspend for Read	OCR Scan	LH28F020SU-L J63428 SMT96103	PDF
FR-PA02 Abstract: No abstract text available Text: SHARP SPEC No. I E L 0 9 X 1 5 9 A ISSUE: Dec. 11. 1997 To ; S P E C I F I C A T I O N S Product Type 8M xl6 Flash Memory+2M(x8) SRAM LRS 13 06 Model No. ( LRS 1 3 0 6 1 ) ♦This specifications contains 51pages including the cover and appendix. If you have any objections, please contact us before issuing purchasing order.	OCR Scan	51pages TS0P48-P-10 AA2028 LRS1306 FR-PA02	PDF
Untitled Abstract: No abstract text available Text: — — Am29SL800B A M D * 8 Megabit 1 M x 8-Bit/512 K x 16-Bit CMOS 1.8 Volt-only Super Low Voltage Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 1.8 to 2.2 V for read, program, and erase operations — Ideal for battery-powered applications	OCR Scan	Am29SL800B 8-Bit/512 16-Bit)	PDF
28F008SA Abstract: 28F016SA 28F016SV 28F160S3 28F160S5 28F320S3 28F320S5 28f320s5 cross e28f016 Text: SEE NEW DESIGN RECOMMENDATIONS i n t e i REFERENCE ONLY 16-MBIT FlashFile MEMORY 28F016SV Includes Commercial and Extended Temperature Specifications • SmartVoltage Technology — User-Selectable 3.3 V or 5 V Vcc - User-Selectable 5 V or 12 V V PP ■ 65 ns Access Time	OCR Scan	16-MBIT 28F016SV 56-Lead 28F016SA, 28F008SA 28F008SA 28F016SV 28F016SA 28F160S3 28F160S5 28F320S3 28F320S5 28f320s5 cross e28f016	PDF
Untitled Abstract: No abstract text available Text: in te i 28F016SV 16-MBIT 1 MBIT x 16, 2 MBIT x 8 FlashFile MEMORY Includes Commercial and Extended Temperature Specifications • SmartVoltage Technology — User-Selectable 3.3V or 5V Vcc — User-Selectable 5V or 12V VPP ■ 65 ns Access Time ■ 1 Million Erase Cycles per Block	OCR Scan	28F016SV 16-MBIT 28F016SA, 28F008SA 28F008SA 56-Lead 28F016SV	PDF
R96FAX Abstract: No abstract text available Text: MODEM PRODUCTS DATA BOOK <1 Rockwell International Semiconductor Products Division Rockwell International Corporation 1987 All Rights Reserved Printed in U.S.A. Order No. 1 February, 1987 Rockwell Sem iconductor Products Division is headquartered in Newport Beach, California with Field	OCR Scan		PDF