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    BW5 TRANSISTOR Search Results

    BW5 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    BW5 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    memory depth expansion

    Abstract: T35L6464A 64KX64
    Text: tm TE CH T35L6464A SYNCHRONOUS BURST SRAM 64K x 64 SRAM FEATURES PIN ASSIGNMENT Top View OPTIONS CE BW8 BW7 BW6 BW5 OE CLK BWE GW BW4 BW3 VSS VCC BW2 BW1 ADSC ADSP ADV VSSQ CE2 CE3 CE2 VSS VCC 102 2 3 4 5 101 100 99 98 6 7 8 9 97 96 95 94 10 11 12 13 93


    Original     		PDF T35L6464A 128-LEAD memory depth expansion T35L6464A 64KX64

    Bw5 transistor

    Abstract: SBW transistor sbw marking
    Text: Preliminary Data Sheet SBW-5089 Product Description DC-8 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ SBW-5089 is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP


    Original     		PDF SBW-5089 SBW-5089 MM50V ML200C, ECB-100607 EDS-103325 Bw5 transistor SBW transistor sbw marking

    Bw5 transistor

    Abstract: ML200C SBW-5089 broadband bias tee
    Text: Preliminary Data Sheet SBW-5089 Product Description DC-8 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ SBW-5089 is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP


    Original     		PDF SBW-5089 SBW-5089 ML200C, ECB-100607 EDS-103325 Bw5 transistor ML200C broadband bias tee

    SB61S64K64A-4

    Abstract: SB61S64K64A-5
    Text: SB61S64K64A Silicon-BasedTechnology Ultra High-Speed PBSRAM 64Kx 64 SYNCHRONOUS PIPELINED-BURST CMOS SRAM Preliminary FEATURES: •Single ■Synchronous ■Fast 3.3V -5% and +10% power supply clock access time: 3.75ns/133MHz , 4ns/125MHz , 5ns/100MHz ■Two clocked chip enable/one clocked chip disable


    Original     		PDF SB61S64K64A 75ns/133MHz 4ns/125MHz 5ns/100MHz 128-pin SB61S64K64A 304-bit Tel886-3-5777897 Fax886-3-5779832 SB61S64K64A-4 SB61S64K64A-5

    SB61S128K64A-5

    Abstract: No abstract text available
    Text: SB61S128K64A Silicon-BasedTechnology Ultra High-Speed PBSRAM 128Kx 64 SYNCHRONOUS PIPELINED-BURST CMOS SRAM Preliminary FEATURES: •Single ■Synchronous pipelined-operation 3.3V -5% and +10% power supply ■Internally self-timed WRITE cycle clock access time:


    Original     		PDF SB61S128K64A 75ns/133MHz 4ns/125MHz 5ns/100MHz 128-pin SB61S128K64A 608-bit usi5779832 Tel886-3-5777897 SB61S128K64A-5

    GVT7164D64

    Abstract: No abstract text available
    Text: GALVANTECH, INC. GVT7164D64 64K X 64 SYNCHRONOUS BURST SRAM SYNCHRONOUS BURST SRAM PIPELINED OUTPUT 64K x 64 SRAM +3.3V SUPPLY,FULLY REGISTERED INPUTS AND OUTPUTS, BURST COUNTER FEATURES GENERAL DESCRIPTION • • • • • The Galvantech Synchronous Burst SRAM family


    Original     		PDF GVT7164D64 GVT7164D64 536x64 7164D64 access/10ns access/12ns access/15ns

    Untitled

    Abstract: No abstract text available
    Text: SB61S128K64A Silicon-BasedTechnology Ultra High-Speed PBSRAM 128Kx 64 SYNCHRONOUS PIPELINED-BURST CMOS SRAM Preliminary FEATURES: Single 3.3V -5% and +10% power supply Fast clock access time: 3.75ns/133MHz , 4ns/125MHz , 5ns/100MHz Two clocked chip enable/one clocked chip disable


    Original     		PDF SB61S128K64A 75ns/133MHz 4ns/125MHz 5ns/100MHz 128-pin SB61S128K64A 608-bit usin779832

    Silicon-Based Technology

    Abstract: No abstract text available
    Text: SB61S64K64A Silicon-BasedTechnology Ultra High-Speed PBSRAM 64Kx 64 SYNCHRONOUS PIPELINED-BURST CMOS SRAM Preliminary FEATURES: Single 3.3V -5% and +10% power supply Fast clock access time: 3.75ns/133MHz , 4ns/125MHz , 5ns/100MHz Two clocked chip enable/one clocked chip disable


    Original     		PDF SB61S64K64A 75ns/133MHz 4ns/125MHz 5ns/100MHz 128-pin SB61S64K64A 304-bit ad-3-5779832 Silicon-Based Technology

    marking LTES

    Abstract: T35L6464A 64KX64 marking a11
    Text: tm TE CH T35L6464A SYNCHRONOUS BURST SRAM 64K x 64 SRAM 3.3V SUPPLY, FULLY REGISTERED AND OUTPUTS, BURST COUNTER • Fast Access times: 5, 6, 7, and 8ns • Fast clock speed: 100, 83, 66, and 50 MHz • Provide high performance 3-1-1-1 access rate • Fast OE access times: 5 and 6ns


    Original     		PDF T35L6464A 128-LEAD marking LTES T35L6464A 64KX64 marking a11

    SMD BW4

    Abstract: Bw5 transistor MARKING SMD PNP TRANSISTOR 2SB736 2SD780 hFE CLASSIFICATION Marking
    Text: Transistors IC SMD Type PNP Silicon Epitaxial Transistor 2SB736 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Complementary to 2SD780. 0.55 Micro package. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1


    Original     		PDF 2SB736 OT-23 2SD780. SMD BW4 Bw5 transistor MARKING SMD PNP TRANSISTOR 2SB736 2SD780 hFE CLASSIFICATION Marking

    g23 schottky diode ST

    Abstract: ADP3500 ADP3500AST LQFP-64 5 amp 48 volt battery charger rtc circuit diagram
    Text: PRELIMINARY TECHNICAL DATA a CDMA Power Management System Preliminary Technical Data ADP3500 FEATURES Handles all CDMA Baseband and RF/IF Power Management Functions LDOs Optimized for Specific CDMA Subsystems Four Backup LDOs for Stand-By mode operation Four Li-Ion Battery Charge Modes


    Original     		PDF ADP3500 64pin CDMA/CDMA2000/PCS ADP3500 GPIO/INT50 ST-64A 64-Lead g23 schottky diode ST ADP3500AST LQFP-64 5 amp 48 volt battery charger rtc circuit diagram

    coin counter

    Abstract: Battery charger 48 volt circuit diagram rev counter cdma power meter block diagram coin operated battery charger DIODE ko3 ADP3500 ADP3500AST LQFP-64
    Text: PRELIMINARY TECHNICAL DATA a CDMA Power Management System Preliminary Technical Data ADP3500 FEATURES Handles all CDMA Baseband and RF/IF Power Management Functions LDOs Optimized for Specific CDMA Subsystems Four Backup LDOs for Stand-By mode operation Four Li-Ion Battery Charge Modes


    Original     		PDF ADP3500 64pin CDMA/CDMA2000/PCS ADP3500 ST-64A 64-Lead coin counter Battery charger 48 volt circuit diagram rev counter cdma power meter block diagram coin operated battery charger DIODE ko3 ADP3500AST LQFP-64

    keypad code lock circuit flow chart

    Abstract: 2508 BVS diagram for digital coin timer
    Text: PRELIMINARY TECHNICAL DATA a CDMA Power Management System Preliminary Technical Data ADP3502 FEATURES Eleven LDOs Optimized for Specific CDMA Subsystems Four Backup LDOs for Stand-By mode operation Ultra Low standby supply current High accuracy battery charging 0.7%


    Original     		PDF ADP3502 64-lead CDMA/CDMA2000/PCS ADP3502 keypad code lock circuit flow chart 2508 BVS diagram for digital coin timer

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY TECHNICAL DATA CDMA Power Management System Preliminary Technical Data ADP3500 FEATURES Handles all CDMA Baseband and RF/IF Power Management Functions LDOs Optimized for Specific CDMA Subsystems Four Backup LDOs for Stand-By mode operation Four Li-Ion Battery Charge Modes


    Original     		PDF 64pin CDMA/CDMA2000/PCS ADP3500 32KHz ST-64A 64-Lead

    Coin Based Mobile Phone Charger

    Abstract: No abstract text available
    Text: a CDMA Power Management System ADP3502 FEATURES 11 LDOs Optimized for Specific CDMA Subsystems 4 Backup LDOs for Standby Mode Operation Ultra Low Standby Supply Current High Accuracy Battery Charger 0.7% 3 Li-Ion Battery Charge Modes 5 mA Precharge Low Current Charge


    Original     		PDF ADP3502 64-Lead CDMA/CDMA2000/PCS LDO11 32kHz BAT54 SU-64) MS-026ABD Coin Based Mobile Phone Charger

    BU9873FJ

    Abstract: No abstract text available
    Text: Datasheet Real-Time Clock RTC series I2C BUS Serial Interface RTC with High-precision Oscillation Adjustment BU9873 Outline Important Characteristics • ■ The BU9873 is a CMOS real-time clock, which has a built-in interrupt generation function. This product is


    Original     		PDF BU9873 BU9873 BU9873FJ

    Coin based mobile battery charger circuit diagram

    Abstract: coin box mobile charger circuit diagram circuit diagram for Coin based mobile battery charger Coin Based Mobile Phone Charger Coin based mobile battery charger block diagram for Coin based mobile battery charger 2508 BVS Coin based mobile battery charger circuit AC voltmeter pic ml621
    Text: a CDMA Power Management System ADP3502 FEATURES 11 LDOs Optimized for Specific CDMA Subsystems 4 Backup LDOs for Standby Mode Operation Ultra Low Standby Supply Current High Accuracy Battery Charger 0.7% 3 Li-Ion Battery Charge Modes 5 mA Precharge Low Current Charge


    Original     		PDF ADP3502 64-Lead CDMA/CDMA2000/PCS LDO11 32kHz SU-64) MS-026ABD C03147 Coin based mobile battery charger circuit diagram coin box mobile charger circuit diagram circuit diagram for Coin based mobile battery charger Coin Based Mobile Phone Charger Coin based mobile battery charger block diagram for Coin based mobile battery charger 2508 BVS Coin based mobile battery charger circuit AC voltmeter pic ml621

    transistor 5bw

    Abstract: transistor 3bw 5bw transistor 2sb736r 3bw transistor 5BW 30 Bw5 transistor 1bw transistor transistor 1BW
    Text: 2 S B 7 3 6 ,2 S B 7 3 6 R Audio Frequency Power Amplifier PNP Silicon Epitaxial Transistor Complimentary to 2SD780, 2SD780R P A C K A G E DIMENSIONS High DC current gain: h FE = 200 TYP. <VCE = -1 .0 V , l c = -5 0 m A in m illim eters {inches) 25T i 10 a


    OCR Scan     		PDF 2SB736, 2SB736R 2SD780, 2SD780R 2SB736 transistor 5bw transistor 3bw 5bw transistor 2sb736r 3bw transistor 5BW 30 Bw5 transistor 1bw transistor transistor 1BW

    B52 transistor

    Abstract: Bw5 transistor MARKING B52 transistor b54 2SB736 2SB736A 2SD780 2SD780A 2SB736AB51
    Text: NEC SILICON TRANSISTORS ELECTRON DEVICE 2 S B 7 3 6 .2 S B 7 3 6 A AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR M IN I MOLD DESCRIPTION PACKAGE D IM EN SIO N S The 2SB736, 2SB736A are designed for use in small type equipments espe­ in millimeters


    OCR Scan     		PDF 2SB736, 2SB736A 2SB736A 2SD780, 2SD780A 2SB736 J22686 --84M B52 transistor Bw5 transistor MARKING B52 transistor b54 2SD780 2SB736AB51

    2SB736

    Abstract: B52 transistor
    Text: SIUCON TRANSISTORS 2SB736,2SB736A AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRAN SISTOR MINI M OLD DESCRIPTION P A C K A G E DIMENSIONS Th e 2 S B 7 36, 2 S B 7 3 6 A are designed fo r use in sm all ty p e equipm ents espe­ in millimeters 2 .8 ± 0.2


    OCR Scan     		PDF 2SB736 2SB736A 2SB736, 2SB736A B52 transistor

    circuit diagram with IC 7476

    Abstract: 600/DG34-1021-36-1012-F
    Text: ADVANCE I^ IC R D N 32K, 64K SYNCHRONOUS SRAM MODULE X MT2LSYT3272B2, MT4LSYT6472B2 72 SYNCHRONOUS SRAM MODULE 32K, 64K x 72 SRAM +3.3V SUPPLY WITH CLOCKED, REGISTERED INPUTS AND BURST COUNTER FEATURES PIN ASSIGNMENT Top View 160-Lead, Dual Read-out DIMM


    OCR Scan     		PDF MT2LSYT3272B2, MT4LSYT6472B2 200ms 001Db53 circuit diagram with IC 7476 600/DG34-1021-36-1012-F

    736a

    Abstract: stt5 117 ajg JE 170 JE 33 t1is 2SB736 2SB736A T108 T540
    Text: •3— S 7 • £/— h- NEC Silicon Transistors iïf/ x fx # 2 S B 7 3 6 ,7 3 6 A W i t # o h FE^ ' * v \ O2SD780, ! m m hFE : 2 0 0 T Y P . ( V CE = —1 .0 V, Ic = —50 mA) 2SD 780At 3 > r i J / ( T a = m 25 iJT i-o °C ) S Bg- § f§ 2SB736 2SB736A


    OCR Scan     		PDF 2SB736 200TYP. O2SD780, 2SD780At 2SB736A 2SB736 736a stt5 117 ajg JE 170 JE 33 t1is 2SB736A T108 T540

    CS-8171D8

    Abstract: CS-8171T5 CS-8171TV5 Bw5 transistor
    Text: M icropower 8V, 100mA Low Dropout Linear Regulator w ith RESET and ENABLE Features D escription T h e CS-8171 is a p recisio n 8V, 100m A m ic ro p o w e r v o ltag e re g u la ­ to r w ith v e ry lo w q u iescen t c u rre n t 75pA ty p ical at lOOpA load . T he


    OCR Scan     		PDF 100mA CS-8171 600mV. CS-8171D8 CS-8171T5 T0-220 CS-8171TV5 Bw5 transistor

    bt 2025 bh

    Abstract: BEL 100N TRANSISTOR PIN DIAGRAM BEL 100N TRANSISTOR bel 100n EPE6047S Pulse Transformers tp 12 80C25 80C26
    Text: SEEQ 80C25 AUtODUPLEX CMOS Ethernet Interface Adapter in 28L Package Technology, Incorporated P R E LIM IN A R Y October 1994 SEEO AutoDUPLEX Designation • Sym bol «identifies product as AutoDUPLEX device P rovides A u to D U P L E X " D ete c t Fu nction fo r


    OCR Scan     		PDF 80C25 10Base-T 10Base-2, 80C26 AUi/10Base-T MD400142/- in233 bt 2025 bh BEL 100N TRANSISTOR PIN DIAGRAM BEL 100N TRANSISTOR bel 100n EPE6047S Pulse Transformers tp 12 80C25