Untitled
Abstract: No abstract text available
Text: APT6017WVR 600V 31.5A 0.17Ω Ω POWER MOS V TO-267 V® Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT6017WVR
O-267
O-267
MIL-STD-750
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Untitled
Abstract: No abstract text available
Text: • R r M APT6017WVR A d va n ced po w er Te c h n o l o g y 0.1 7a 600v 31 .sa POWER MOS V' Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT6017WVR
O-267
APT6017W
00A/ps)
IL-STD-750
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PDF
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LG direct drive motor
Abstract: 600v 20 amp mosfet transistor tl 11C mosfet
Text: m jg m J T f 50 AMP, 600 VOLT IGBT PLUS DIODE HALF BRIDGE POWER HYBRID 4f\* a 4 1 U 1 M.S. K EN N ED Y CORP. 315 699-9201 0170 Thompson Road •Cicero, N.Y. 13039 FEATURES: 600V, 50 Amp Capability Ultra Low Thermal Resistance - Junction to Case - 0.21 °C/W
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4101B
MII-H-38534
LG direct drive motor
600v 20 amp mosfet
transistor tl
11C mosfet
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PDF
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Untitled
Abstract: No abstract text available
Text: APT6017WVR 600V 31.5A 0.170Ω POWER MOS V TO-267 V® Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT6017WVR
O-267
O-267
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IRF MOSFET 100A 200v
Abstract: IRF 100A IRF n 30v IRF5851 MOSFET 150 N IRF IRF5802 IRF5803 IRF5804 IRF5805 IRF5806
Text: IRF5801PbF Static @ TJ = 25°C unless otherwise specified Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS Drain-to-Source Leakage Current
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IRF5801PbF
10sec.
IRF MOSFET 100A 200v
IRF 100A
IRF n 30v
IRF5851
MOSFET 150 N IRF
IRF5802
IRF5803
IRF5804
IRF5805
IRF5806
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PDF
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Untitled
Abstract: No abstract text available
Text: Single N-channel MOSFET ELM3C0660A •General description ■Features ELM3C0660A uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • Vds=600V • Id=6A • Rds(on) < 1.25Ω (Vgs=10V) ■Maximum absolute ratings
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ELM3C0660A
ELM3C0660A
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Untitled
Abstract: No abstract text available
Text: Single N-channel MOSFET ELM3C0660A •General description ■Features ELM3C0660A uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • Vds=600V • Id=6A • Rds(on) < 1.25Ω (Vgs=10V) ■Maximum absolute ratings
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ELM3C0660A
ELM3C0660A
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ku024n06p
Abstract: IS80A
Text: SEMICONDUCTOR KU024N06P TECHNICAL DATA N-ch Trench MOS FET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter,
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KU024N06P
120uH,
IS80A,
dI/dt200A/,
ku024n06p
IS80A
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Untitled
Abstract: No abstract text available
Text: NTE2969 MOSFET N−Channel, Enhancement Mode High Speed Switch TO3P Package Description: The NTE2969 is an N−channel enhancement mode power field effect transistor in a TO3P type package especially tailored to minimize on−state resistance, provide superior switching performance, and
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NTE2969
NTE2969
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Untitled
Abstract: No abstract text available
Text: Single N-channel MOSFET ELM34416AA-N •General description ■Features ELM34416AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=30V Id=11A Rds(on) < 12.0mΩ (Vgs=10V) Rds(on) < 17.5mΩ (Vgs=4.5V)
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ELM34416AA-N
ELM34416AA-N
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Untitled
Abstract: No abstract text available
Text: Single N-channel MOSFET ELM34416AA-N •General description ■Features ELM34416AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=30V Id=11A Rds(on) < 12.0mΩ (Vgs=10V) Rds(on) < 17.5mΩ (Vgs=4.5V)
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ELM34416AA-N
ELM34416AA-N
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Untitled
Abstract: No abstract text available
Text: Single N-channel MOSFET ELM33412CA-S •General description ■Features ELM33412CA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • • Vds=20V Id=6A Rds(on) < 24mΩ (Vgs=4.5V) Rds(on) < 32mΩ (Vgs=2.5V)
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ELM33412CA-S
ELM33412CA-S
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c2802
Abstract: AS1210
Text: APT5024BVR A dvan ced P o w er Te c h n o l o g y 500v 22A 0.240a POWER MOS V Power MOS V isa new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V
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APT5024BVR
O-247
00A/fis)
O-247AD
c2802
AS1210
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PDF
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kf9n25
Abstract: KF9N25D
Text: SEMICONDUCTOR KF9N25D TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converters
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KF9N25D
Fig13.
Fig14.
Fig15.
kf9n25
KF9N25D
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A1 SOT-23 MOSFET P-CHANNEL
Abstract: P-Channel MOSFET code 1A TSM2307CX TSM2307 p-channel mosfet c 103 mosfet P-Channel MOSFET code L 1A P-Channel SOT-23 Power MOSFET sot-23 P-Channel MOSFET
Text: TSM2307 30V P-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Source 3. Drain -30 Features ID (A) 80 @ VGS = -10V -3 140 @ VGS = -4.5V -2 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance
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TSM2307
OT-23
TSM2307CX
A1 SOT-23 MOSFET P-CHANNEL
P-Channel MOSFET code 1A
TSM2307
p-channel mosfet
c 103 mosfet
P-Channel MOSFET code L 1A
P-Channel SOT-23 Power MOSFET
sot-23 P-Channel MOSFET
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Untitled
Abstract: No abstract text available
Text: BSC009NE2LS OptiMOSTM Power-MOSFET Product Summary Features • Optimized for e-fuse and ORing application • Very low on-resistance R DS on @ V GS=4.5 V • 100% avalanche tested • Superior thermal resistance VDS 25 V RDS(on),max 0.9 mW ID 100 A QOSS
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BSC009NE2LS
IEC61249-2-21
009NE2LS
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mosfet marking Bc
Abstract: No abstract text available
Text: TSM2303 30V P-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Source 3. Drain -30 ID (A) 180 @ VGS =-10V -1.3 300 @ VGS =-4.5V -1.1 Block Diagram Features ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance
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TSM2303
OT-23
TSM2303CX
mosfet marking Bc
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IRF7303
Abstract: RD-622 100U AN-994 RD622 i100u IRF7303 application
Text: PD - 9.1239B International UggìRectifier IRF7303 preliminary HEXFET Power M O S F E T • • • • • • • Generation V Technology Ultra Low On-Resistance Dual N-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching
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1239B
IRF7303
RD-622
100U
AN-994
RD622
i100u
IRF7303 application
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PDF
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Untitled
Abstract: No abstract text available
Text: TSM2307 30V P-Channel MOSFET PRODUCT SUMMARY VDS V RDS(on)(mΩ) SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain -30 Features ID (A) 80 @ VGS = -10V -3 140 @ VGS = -4.5V -2 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance
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TSM2307
OT-23
TSM2307CX
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melcher SMR 121.5ER-7
Abstract: Melcher family SMR SMR 121.5er-7 melcher, uster, switzerland 126ER-7 melcher smr MELCHER SWITCHING REGULATOR 123ER-7 123ER-8 126ER-8
Text: 5975062 ME LCHE R 89D 00025 INC M C L C H E R f Ackerstrasse 56 Postfach CH-8610 Uster Telefon 01 9413737 Telex 57154 meus ch Telefax 9409858 eIektronische G eräte AG S w itzerlan d /— / T - ttlt- S Switching Mode Regulator Input voltage Vi = V0+ 5 V . .35 VDC
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CH-8610
melcher SMR 121.5ER-7
Melcher family SMR
SMR 121.5er-7
melcher, uster, switzerland
126ER-7
melcher smr
MELCHER SWITCHING REGULATOR
123ER-7
123ER-8
126ER-8
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT2305 Power MOSFET P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT2305 is P-channel enhancement mode Power MOSFET, designed in serried ranks. with fast switching speed, low on-resistance, favorable stabilization. Used in commercial and industrial surface mount
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UT2305
UT2305
UT2305L
UT2305-AE3-R
UT2305L-AE3-R
OT-23
QW-R502-1at
QW-R502-133
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utc 324
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT2305 Power MOSFET 4.2A, 20V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UT2305 is P-channel enhancement mode power MOSFET, designed in serried ranks. With fast switching speed, low on-resistance, favorable stabilization.
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UT2305
UT2305
UT2305L-AE2-R
UT2305G-AE2-R
UT2305L-AE3-R
UT2305G-AE3-R
OT-23-3
OT-23
QW-R502-133
utc 324
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PDF
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UT2305G-AE3-R
Abstract: UT2305 UT2305G MARKING 23E SOT-23 P-Channel 1.8V MOSFET
Text: UNISONIC TECHNOLOGIES CO., LTD UT2305 Power MOSFET P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT2305 is P-channel enhancement mode Power MOSFET, designed in serried ranks. with fast switching speed, low on-resistance, favorable stabilization. Used in commercial and industrial surface mount
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UT2305
UT2305
UT2305L
UT2305G
UT2305-AE3-R
UT2305L-AE3-R
UT2305G-AE3-R
OT-23
QW-R502-133
UT2305G-AE3-R
UT2305G
MARKING 23E SOT-23
P-Channel 1.8V MOSFET
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mosfet 740
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UT2305A Power MOSFET P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT2305A is P-channel enhancement mode Power MOSFET, designed in serried ranks. with fast switching speed, low on-resistance, favorable stabilization. Used in commercial and industrial surface mount
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UT2305A
UT2305A
UT2305AL
UT2305A-AE3-R
UT2305AL-AE3-R
OT-23
QW-R502-192
mosfet 740
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