BY 178 DIODE Search Results

BY 178 DIODE Result Highlights (5)

Part	Manufacturer	Description
CUZ24V	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 24 V, USC
XCUZ13V	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 13.0 V, USC
XCUZ36V	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 36.0 V, USC
CUZ12V	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 12 V, USC
MUZ5V6	Toshiba Electronic Devices & Storage Corporation	Zener Diode, 5.6 V, USM

BY 178 DIODE Price and Stock

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Microchip Technology Inc JANTX1N4115-1
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	JANTX1N4115-1		178			1 - 10 $6.82 100 $4.32 1000 $4.1 10000 $4.1	Buy Now
Microchip Technology Inc JANTXV1N5811US Diode - JANTXV Level - 150V - 3A - 875 mV @ 4 A Forward (Vf) (Max) @ If - Fast Recovery =< 500ns, > 200mA (Io) - B, SQ-MELF Package.
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	JANTXV1N5811US		178			1 - 10 $11.43 100 $10.93 1000 $10.25 10000 $10.25	Buy Now
Microchip Technology Inc JANTXV1N5290-1
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	JANTXV1N5290-1					1 - 10 - 100 $30.13 1000 $30.13 10000 $30.13	Buy Now
Microchip Technology Inc CDLL4135 Zener Diode - 100V - ±5% Tolerance - 500 mW - 1600 Ohms - 1.1 V @ 200 mA Forward (Vf) (Max) @ If - DO-213AB - Surface Mount.
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	CDLL4135					1 - 10 - 100 $5.23 1000 $3.63 10000 $3.63	Buy Now
Microchip Technology Inc 1N5245B-1
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	1N5245B-1					1 - 10 - 100 $2.81 1000 $1.93 10000 $1.93	Buy Now

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BY 178 DIODE Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
ESD0P2RF-02LRH Abstract: PCB on-chip ESD discharge protection connector s22 varistor AN103 AN140 AN167 BFP740F ESD0P2RF-02LS JESD22-A114D copper bond wire infineon Text: Application Note, Rev. 1.0, Dec. 2008 Application Note No. 178 ESD Protection for RF Antennas using Infineon ESD0P4RFL and ESD0P2RF Small Signal Discretes Edition 2008-12-05 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2008.	Original	BGA728L7 ESD0P2RF-02LRH PCB on-chip ESD discharge protection connector s22 varistor AN103 AN140 AN167 BFP740F ESD0P2RF-02LS JESD22-A114D copper bond wire infineon	PDF
Untitled Abstract: No abstract text available Text: R2062 SERIES 3 wire interface Real-Time Clock ICs with Battery Backup switch-over Function NO.EA-178-130814 OUTLINE The R2062 is a CMOS real-time clock IC connected to the CPU by three signal lines, CE, SCLK, and SIO, and configured to perform serial transmission of time and calendar data to the CPU. Further, battery backup	Original	R2062 EA-178-130814 Room403, Room109, 10F-1,	PDF
ML614 Abstract: R2062 R2062K01-E2 R2062K02-E2 SSOP16 Text: R2062 SERIES 3 wire interface Real-Time Clock ICs with Battery Backup switch-over Function NO.EA-178-070910 OUTLINE The R2062 is a CMOS real-time clock IC connected to the CPU by three signal lines, CE, SCLK, and SIO, and configured to perform serial transmission of time and calendar data to the CPU. Further, battery backup	Original	R2062 EA-178-070910 X1X1X101) ML614 R2062K01-E2 R2062K02-E2 SSOP16	PDF
ML614 Abstract: R2062 R2062K01-E2 R2062K02-E2 SSOP16 Text: R2062 SERIES 3 wire interface Real-Time Clock ICs with Battery Backup switch-over Function NO.EA-178-080118 OUTLINE The R2062 is a CMOS real-time clock IC connected to the CPU by three signal lines, CE, SCLK, and SIO, and configured to perform serial transmission of time and calendar data to the CPU. Further, battery backup	Original	R2062 EA-178-080118 X1X1X101) ML614 R2062K01-E2 R2062K02-E2 SSOP16	PDF
free transistor equivalent book Abstract: marking H2A sot-23 marking W2 sot363 H2B sot23 transistor number code book FREE Text: DL126TRS/D Tape & Reel and Packaging Specifications for Small-Signal Transistors, FETs and Diodes http://onsemi.com Excerpted from the ON Semiconductor Small–Signal Transistors, FETs and Diodes Device Data Book, DL126/D. For the most current Tape & Reel information, please download BRD8011/D	Original	DL126TRS/D DL126/D. BRD8011/D free transistor equivalent book marking H2A sot-23 marking W2 sot363 H2B sot23 transistor number code book FREE	PDF
EIA-468 label location Abstract: W1 sot 363 MPS3904RLRA free transistor equivalent book MARKING W2 SOT23 sot353 transistor MARKING CODE LAYOUT G SOT89 marking W2 sot363 Text: DL126TRS/D Tape & Reel and Packaging Specifications for Small-Signal Transistors, FETs and Diodes http://onsemi.com Excerpted from the ON Semiconductor Small–Signal Transistors, FETs and Diodes Device Data Book, DL126/D. Embossed Tape and Reel is used to facilitate automatic pick and place equipment feed requirements. The tape is used as the	Original	DL126TRS/D DL126/D. 70/SOT 75/SOT 416/SC r14525 EIA-468 label location W1 sot 363 MPS3904RLRA free transistor equivalent book MARKING W2 SOT23 sot353 transistor MARKING CODE LAYOUT G SOT89 marking W2 sot363	PDF
SOD223 Abstract: SOD-223 Text: LESHAN RADIO COMPANY, LTD. Common Anode Silicon Dual Switching diodes LM1MA151WAT1G LM1MA152WAT1G These Common Anode Silicon Epitaxial Planar Dual Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC-59 package which is designed for low	Original	LM1MA151WAT1G LM1MA152WAT1G SC-59 -100mA LM1MA151WAT3G 10000/Tape 3000/Tape SOD223 SOD-223	PDF
str 50113 Abstract: BZX79-C6 c5v1 BZX79C6V2 philips BZX79-C27AMO C4V7 ST SOD27 BZX79-C bzx79-c philips BZX79C9V1AMO Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BZX79 series Voltage regulator diodes Product specification Supersedes data of 1996 Apr 26 1999 May 25 Philips Semiconductors Product specification Voltage regulator diodes BZX79 series FEATURES DESCRIPTION • Total power dissipation:	Original	M3D176 BZX79 DO-35) BZX79-A) BZX79-B) BZX79-C6V8 str 50113 BZX79-C6 c5v1 BZX79C6V2 philips BZX79-C27AMO C4V7 ST SOD27 BZX79-C bzx79-c philips BZX79C9V1AMO	PDF
marking H2A sot-23 Abstract: MPS3904RLRA EIA 481 SOT363 H2B sot23 transistor 228 T3 Text: DL126TRS/D Tape & Reel and Packaging Specifications for Small-Signal Transistors, FETs and Diodes http://onsemi.com Excerpted from the ON Semiconductor Small–Signal Transistors, FETs and Diodes Device Data Book, DL126/D. Embossed Tape and Reel is used to facilitate automatic pick and place equipment feed requirements. The tape is used as the	Original	DL126TRS/D DL126/D. 70/SOT 75/SOT 416/SC 88/SOT marking H2A sot-23 MPS3904RLRA EIA 481 SOT363 H2B sot23 transistor 228 T3	PDF
9351 Abstract: diode ring mixer 9351 equivalent HSCH-9301 HSCH-9351 HSCH9351 HP 9301 SONY+msl+9351 Text: Agilent HSCH-9301/HSCH-9351 GaAs Beam Lead Schottky Barrier Ring and Bridge Diodes Data Sheet HSCH-9301 Junction Side up 125 (4.9) 115 (4.1) 183 (7.2) 178 (7.0) 756 (29.8) 746 (29.4) 390 (15.4) 310 (12.2) Features 125 (4.9) 105 (4.1) L = 0.1 nH 346 (13.6)	Original	HSCH-9301/HSCH-9351 HSCH-9301 HSCH-9301 HSCH-9351 HSCH-9301/-9351/rev 9351 diode ring mixer 9351 equivalent HSCH9351 HP 9301 SONY+msl+9351	PDF
Untitled Abstract: No abstract text available Text: SKiiP 26NAB066V1 Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper ', 4 ' ,- * #% +$ * #% 12/3 + * #% 12/3 +$ 5 " 7 Values Units .// 6 #/ ' ' 8 9/ : ; "%/ + Diode - Inverter, Chopper	Original	26NAB066V1	PDF
Untitled Abstract: No abstract text available Text: LESHAN RADIO COMPANY, LTD. Surface Mount Schotty Diode LRB500V-40T1G zApplications Low current rectification 1 zFeatures 1 Small surface mounting type. 2) Low IR. IR=70nA Typ.) 3) High reliability. 4) Pb-Free package is available. 2 SOD-323 zConstruction	Original	LRB500V-40T1G OD-323 3000/Tape LRB500V-40T3G 10000/Tape	PDF
Untitled Abstract: No abstract text available Text: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE LRB521S-30T1 zApplictions Low current rectification and high speed switching zFeatures 1 Extremelysmall surface mounting type. SC-79/SOD523 IO=200mA guaranteed despite the size. Low VF.(V F=0.40V Typ. At 200mA)	Original	LRB521S-30T1 SC-79/SOD523) 200mA 200mA) OD523/SC-79 LRB521S-30T1	PDF
SOT 363 marking CODE 039 Abstract: LRB520S-30T1 LRB520S-30T3 marking code 4 SC-79 SOT-353 marking code b1 Text: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE LRB520S-30T1 zApplications Low current rectification and high speed switching zFeatures 1 Extremelysmall surface mounting type. SC-79/SOD523 Low IR.(IR=0.1mA Typ.) High reliability. 2 Pb-Free package is available.	Original	LRB520S-30T1 SC-79/SOD523) OD523/SC-79 LRB520S-30T3 3000/Tape 10000/Tape 1330mm 360mm SOT 363 marking CODE 039 LRB520S-30T1 LRB520S-30T3 marking code 4 SC-79 SOT-353 marking code b1	PDF

Untitled Abstract: No abstract text available Text: LESHAN RADIO COMPANY, LTD. Band Switching Diode z Applications L1SS356T1G High frequency switching z Features 1 Small surface mounting type. 2) High reliability. 1 3) Pb-Free Package is Available. z Construction Silicon epitaxial planar 2 1 CATHODE SOD– 323	Original	L1SS356T1G	PDF
Untitled Abstract: No abstract text available Text: LESHAN RADIO COMPANY, LTD. Surface Mount Schotty Diode z Applications LRB501V-40T1G Low current rectification z Features 1 1 Small surface mounting type. 2) High reliability. 3) Pb-Free package is available. 2 z Construction SOD-323 Silicon epitaxial planar	Original	LRB501V-40T1G OD-323 3000/Tape LRB501V-40T3G 10000/Tape	PDF
Untitled Abstract: No abstract text available Text: LESHAN RADIO COMPANY, LTD. Band Switching Diode z Applications LBA277T1 High frequency switching z Features 1 Small surface mounting type. 2) High reliability. 1 z Construction Silicon epitaxial planar 2 z Pb-Free package is available SOD–523 Device Marking	Original	LBA277T1	PDF
Untitled Abstract: No abstract text available Text: LESHAN RADIO COMPANY, LTD. Schottky barrier diode LRB551V-30T1GG LRB551V-30T1G 1 zApplications High-frequency rectification Switching regulators 2 zFeatures 1 Small surface mounting type. CASE 477– 02, STYLE 1 SOD– 323 2) Ultra low VF VF=0.45V Typ. at 0.5A)	Original	LRB551V-30T1GG LRB551V-30T1G 3000/Tape LRB551V-30T3G 10000/Tape	PDF
LDC20B030 Abstract: LDC20B murata ldb20 ldb20 ldb25 balun Text: MONOLITHIC DEVICES m itfìa fn SOLDERING CONDITIONS FOR: LC CHIP FILTERS, DIRECTIONAL T2EKK2 COUPLERS/90° HYBRIDS, DELAY LINES, CHIP BALUN AND RF DIODE SWITCH I Soldering must be carried out by reflow soldering. Please contact Murata Electronics concerning other soldering	OCR Scan	COUPLERS/90° LDB20 LDC30B030GC2100 LDC30B030GC2500 LDC35B030GC0250 LDC20B030F1600 LDC20B030F1850 LDC20BxxxxJrax LDC20BxxxxHxxxx LDC20B030 LDC20B murata ldb20 ldb20 ldb25 balun	PDF
LDC30B030GC0850 Abstract: No abstract text available Text: MONOLITHIC DEVICES SOLDERING CONDITIONS FOR: LC CHIP FILTERS, DIRECTIONAL COUPLERS/900 HYBRIDS, DELAY LINES, CHIP BALUN AND RF DIODE SWITCH I Soldering must be carried out by reflow soldering. Please contact Murata Electronics concerning other soldering before use.	OCR Scan	COUPLERS/900 100aC. LDC30B030GC0850 LDC30B030GC1000 LDC30BXXXJXXXX LDC20 LDB30 LDB33	PDF
1N5628 Abstract: 12115X marking AB SOD123 1N5828 Text: 1N5826 1N5827 1N5828 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N582S and 1N5828 are Motorola Preferred Devices Designer’s Data Sheet Power Rectifiers SCHOTTKY BARRIER RECTIFIERS . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode.	OCR Scan	1N5826 1N5827 1N5828 1N582S 1N5828 DO-35 1N5628 12115X marking AB SOD123	PDF
1N5831 Abstract: E5 sot223 1N5829 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N5829 1N5830 1N5831 Designer's Data Sheet Switchm ode Power Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal	OCR Scan	prop30 DO-35 1N5831 E5 sot223 1N5829	PDF
diode sy 164 dl Abstract: diode sy 164 02N2222 b6045 Text: MOTOROLA MBR6035 MBR6045 • SEMICONDUCTOR TECHNICAL DATA Switchm ode Power Rectifiers MBR6045 Is a Motorola Preferred Device . using a platinum barrier metal in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact.	OCR Scan	MBR6035 MBR6045 MBR6045 diode sy 164 dl diode sy 164 02N2222 b6045	PDF
12v dc full wave bridge rectifier Abstract: 5000 watt full bridge design 1N5S34 Text: 1N5832 IN 5833 1N5834 MOTOROLA I SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet 1N5832 and 1N5S34 are Motorola Preferred Devices Switchmode Power Rectifier SCHOTTKY BARRIER RECTIFIERS . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode.	OCR Scan	1N5832 1N5834 1N5S34 12v dc full wave bridge rectifier 5000 watt full bridge design	PDF

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BY 178 DIODE Search Results

BY 178 DIODE Result Highlights (5)

BY 178 DIODE Price and Stock

Microchip Technology Inc JANTX1N4115-1

Microchip Technology Inc JANTXV1N5811US

Microchip Technology Inc JANTXV1N5290-1

Microchip Technology Inc CDLL4135

Microchip Technology Inc 1N5245B-1

BY 178 DIODE Datasheets Context Search

ESD0P2RF-02LRH

Untitled

ML614

ML614

free transistor equivalent book

EIA-468 label location

SOD223

str 50113

marking H2A sot-23

9351

Untitled

Untitled

Untitled

SOT 363 marking CODE 039

Untitled

Untitled

Untitled

Untitled

LDC20B030

LDC30B030GC0850

1N5628

1N5831

diode sy 164 dl

12v dc full wave bridge rectifier