BYV27 200 TAP Search Results

BYV27 200 TAP Result Highlights (5)

Part	Manufacturer	Description
10091796-001LF	Amphenol Communications Solutions	XCede® High Speed Backplane Connectors, Cross-Recessed Pan Head Screw, SS, Self-Tapping, #2-32 x 3/8" Long.
TPL0401B-10DCKR	Texas Instruments	128-Taps Single-Channel Digital Potentiometer With I²C Interface 6-SC70 -40 to 125
TPL0401A-10DCKR	Texas Instruments	128-Taps Single-Channel Digital Potentiometer With I²C Interface 6-SC70 -40 to 125
TPL1401EVM	Texas Instruments	TPL1401 256-tap high-accuracy digital potentiometer (digipot) with buffered wiper evaluation module
TPL8002-25PWR	Texas Instruments	TANDEM 64-TAP Digital Potentiometer 16-TSSOP -40 to 85

BYV27 200 TAP Price and Stock

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Vishay Semiconductors BYV27-200-TAP DIODE AVALANCHE 200V 2A SOD57
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BYV27-200-TAP	Cut Tape	26,886		1	1 $0.72 10 $0.515 100 $0.72 1000 $0.34631 10000 $0.34631	Buy Now
	BYV27-200-TAP	Ammo Pack	25,000		5,000	1 - 10 - 100 - 1000 - 10000 $0.25659	Buy Now
Vishay Intertechnologies BYV27-200-TAP AVALANCHE DIODE SOD57 EPI - Bulk (Alt: 89K9678)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	BYV27-200-TAP	Bulk		16 Weeks, 5 Days	1	1 $0.73 10 $0.508 100 $0.401 1000 $0.401 10000 $0.401	Buy Now
	BYV27-200-TAP	Ammo Pack		14 Weeks	25,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Mouser Electronics	BYV27-200-TAP		23,457			1 $0.9 10 $0.659 100 $0.449 1000 $0.319 10000 $0.269	Buy Now
Verical	BYV27-200-TAP		43,389		27	1 - 10 - 100 $0.4399 1000 $0.3215 10000 $0.2507	Buy Now
	BYV27-200-TAP		18,207		24	1 - 10 - 100 $0.2798 1000 $0.2668 10000 $0.2582	Buy Now
	BYV27-200-TAP		10,246		208	1 - 10 - 100 - 1000 $0.3522 10000 $0.3245	Buy Now
	BYV27-200-TAP		4,688		117	1 - 10 - 100 - 1000 $0.2548 10000 $0.2548	Buy Now
Arrow Electronics	BYV27-200-TAP		43,390	14 Weeks	1	1 $0.7118 10 $0.5151 100 $0.4411 1000 $0.3224 10000 $0.2514	Buy Now
	BYV27-200-TAP	Cut Strips	18,207	14 Weeks	1	1 $0.2927 10 $0.2884 100 $0.2798 1000 $0.2668 10000 $0.2582	Buy Now
Newark	BYV27-200-TAP	Bulk	10,246		1	1 $0.241 10 $0.241 100 $0.241 1000 $0.241 10000 $0.241	Buy Now

TTI	BYV27-200-TAP	Ammo Pack			25,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
TME	BYV27-200-TAP		3,571		1	1 $0.787 10 $0.501 100 $0.359 1000 $0.273 10000 $0.234	Buy Now
Chip One Stop	BYV27-200-TAP	Cut Tape	4,688	0 Weeks, 1 Days	5	1 - 10 $0.252 100 $0.252 1000 $0.252 10000 $0.252	Buy Now
EBV Elektronik	BYV27-200-TAP			15 Weeks	5,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
New Advantage Corporation	BYV27-200-TAP		15,000		1	1 - 10 - 100 - 1000 - 10000 $0.39	Buy Now
Vyrian	BYV27-200-TAP		18,671			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Intertechnologies BYV27-200-TR Rectifiers 2 Amp 200 Volt 50 Amp IFSM
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	BYV27-200-TR		32,759			1 $0.64 10 $0.507 100 $0.374 1000 $0.287 10000 $0.265	Buy Now
TTI	BYV27-200-TR	Reel			25,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Semiconductors BYV27200TAP Electronic Component
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	BYV27200TAP		5,780			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Semiconductors BYV27/200TAP Miscellaneous Components
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Vyrian	BYV27/200TAP		18,485			1 - 10 - 100 - 1000 - 10000 -	Get Quote

Find more BYV27 200 TAP price and stock on Findchips.com

BYV27 200 TAP Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
BYV27-200-TAP		Vishay Semiconductors	Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE AVALANCHE 200V 2A SOD57		Original	PDF

BYV27 200 TAP Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
BYV27-50 Abstract: BYV27-100 BYV27-150 BYV27-200 DIODE WITH SOD CASE BYV27200TR BYV27-200-TR Text: BYV27-50, BYV27-100, BYV27-150, BYV27-200 www.vishay.com Vishay Semiconductors Ultra-Fast Avalanche Sinterglass Diode FEATURES • Controlled avalanche characteristic • Low forward voltage • Ultra fast recovery time • Glass passivated junction • Hermetically sealed package	Original	BYV27-50, BYV27-100, BYV27-150, BYV27-200 OD-57 MIL-STD-750, BYV27-200 BYV27-2trademarks 2011/65/EU BYV27-50 BYV27-100 BYV27-150 DIODE WITH SOD CASE BYV27200TR BYV27-200-TR	PDF
Untitled Abstract: No abstract text available Text: BYV27-50, BYV27-100, BYV27-150, BYV27-200 www.vishay.com Vishay Semiconductors Ultra-Fast Avalanche Sinterglass Diode FEATURES • Controlled avalanche characteristic • Low forward voltage • Ultra fast recovery time • Glass passivated junction • Hermetically sealed package	Original	BYV27-50, BYV27-100, BYV27-150, BYV27-200 OD-57 MIL-STD-750, 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.	PDF
BYV27-200-TAP Abstract: No abstract text available Text: BYV27-50, BYV27-100, BYV27-150, BYV27-200 www.vishay.com Vishay Semiconductors Ultra-Fast Avalanche Sinterglass Diode FEATURES • Controlled avalanche characteristic • Low forward voltage • Ultra fast recovery time • Glass passivated junction • Hermetically sealed package	Original	BYV27-50, BYV27-100, BYV27-150, BYV27-200 OD-57 MIL-STD-750, 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A BYV27-200-TAP	PDF
Untitled Abstract: No abstract text available Text: BYV27-50, BYV27-100, BYV27-150, BYV27-200 www.vishay.com Vishay Semiconductors Ultra-Fast Avalanche Sinterglass Diode FEATURES • Controlled avalanche characteristic • Low forward voltage • Ultra fast recovery time • Glass passivated junction • Hermetically sealed package	Original	BYV27-50, BYV27-100, BYV27-150, BYV27-200 OD-57 MIL-STD-750, 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A	PDF
BC237 Abstract: lm358 current monitor shunt BC237 NATIONAL SEMICONDUCTOR 4148 t Text: U2402B Fast-Charge Controller for NiCd/NiMH Batteries Description The fast-charge battery controller circuit, U2402B, uses bipolar technology. The IC enables the designer to create an efficient and economic charge system. The U2402B incorporates intelligent multiple-gradient batteryvoltage monitoring and mains phase control for power	Original	U2402B U2402B, U2402B D-74025 08-Nov-99 BC237 lm358 current monitor shunt BC237 NATIONAL SEMICONDUCTOR 4148 t	PDF
PBL and Application Note Abstract: No abstract text available Text: ERICSSON ^ February 1999 PBL 377 70/1 High Performance Stepper Motor Drive Circuit Description Key Features PBL 377 70/1 is a bipolar monolithic circuit intended to control and drive the current in one winding of a stepper motor. It is a high power version of PBL 377 17/1 and	OCR Scan	1522-PBL SE-164 PBL and Application Note	PDF
5-phase drive STEPPER MOTOR Abstract: 3770A PBL3770A BYV27 PBL3770ANS 5-phase microstepping Text: February 1999 PBL 3770A High Performance Stepper Motor Drive Circuit Description Key Features PBL 3770A is a bipolar monolithic circuit intended to control and drive the current in one winding of a stepper motor. It is a high power version of PBL 3717 and special	Original	1522-PBL 3770/6Uen. 16-pin 20-pin 28-pin SE-164 5-phase drive STEPPER MOTOR 3770A PBL3770A BYV27 PBL3770ANS 5-phase microstepping	PDF
BYV27 Abstract: REGULATOR IC 377 PLASTIC PACKAGE microstepping 3717 Text: February 1999 PBL 377 70/1 High Performance Stepper Motor Drive Circuit Description Key Features PBL 377 70/1 is a bipolar monolithic circuit intended to control and drive the current in one winding of a stepper motor. It is a high power version of PBL 377 17/1 and	Original	SE-164 BYV27 REGULATOR IC 377 PLASTIC PACKAGE microstepping 3717	PDF
stpr16 Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode Text: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •	Original	MURB1620CT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 stpr16 MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode	PDF
b2545 transistor Abstract: TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface Text: MBR2535CT, MBR2545CT MBR2545CT is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection	Original	MBR2535CT, MBR2545CT MBR2545CT B2535, B2545 VHE205 VHE210 VHE215 VHE220 VHE2401 b2545 transistor TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface	PDF
MR2835S equivalent Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502 Text: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected	Original	MBR6045PT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MR2835S equivalent A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502	PDF
A14F diode Abstract: DIODE marking ES2D V352 DC "Transient Voltage Suppressor" diode A14A rg3j 005 SR1002 0010C 357D-01 1N2069 Text: MURS220T3 Preferred Device Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system.	Original	MURS220T3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 A14F diode DIODE marking ES2D V352 DC "Transient Voltage Suppressor" diode A14A rg3j 005 SR1002 0010C 357D-01 1N2069	PDF
mur1650 Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount Text: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and	Original	MBRB1045 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 mur1650 T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount	PDF
equivalent components of diode 1N5399 Abstract: diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode Text: MBR6045WT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected	Original	MBR6045WT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 equivalent components of diode 1N5399 diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode	PDF

mr852 Abstract: DIODE MUR410 BA 5904 A F P RS1G footprint wave soldering MUR460 BL mur1650 BYV1945 murs160t3 smb MBRD360 TRANSISTOR 534 Text: MBRM120LT3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced	Original	MBRM120LT3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 mr852 DIODE MUR410 BA 5904 A F P RS1G footprint wave soldering MUR460 BL mur1650 BYV1945 murs160t3 smb MBRD360 TRANSISTOR 534	PDF
MUR420 diode Abstract: MUR860 equivalent Diode 31DQ06 mr760 DIODE usd745c equivalent 1N5186GP 1N2069 diode MARKING BCJ P600K SES5001 cross reference Text: MBRM140T3 Advance Information Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package http://onsemi.com The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal	Original	MBRM140T3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MUR420 diode MUR860 equivalent Diode 31DQ06 mr760 DIODE usd745c equivalent 1N5186GP 1N2069 diode MARKING BCJ P600K SES5001 cross reference	PDF
diode A14A surface mount Abstract: SES5001 diode A14F diode mur120 equivalent diode diode A14A surface APPLICATION DIODE 1N5406 BC 536 PR3002 diode MBRD360 6A10 BL diode Text: MBRD620CT, MBRD630CT, MBRD640CT, MBRD650CT, MBRD660CT MBRD620CT, MBRD640CT and MBRD660CT are Preferred Devices SWITCHMODE Power Rectifiers http://onsemi.com DPAK Surface Mount Package SCHOTTKY BARRIER RECTIFIERS 6.0 AMPERES 20 TO 60 VOLTS . . . in switching power supplies, inverters and as free wheeling	Original	MBRD620CT, MBRD630CT, MBRD640CT, MBRD650CT, MBRD660CT MBRD640CT MBRD660CT VHE205 VHE210 diode A14A surface mount SES5001 diode A14F diode mur120 equivalent diode diode A14A surface APPLICATION DIODE 1N5406 BC 536 PR3002 diode MBRD360 6A10 BL diode	PDF
transistor U1620R Abstract: fast recovery diode ses5001 MUR1620CT equivalent PK MUR 460 DIODE PK MUR 460 transistor mbr4045pt 1N2069 MBRD360 Fast Recovery Diode, 24 Amperes, 600 Volts, Button Type STPS20h100 Text: MUR1620CTR Preferred Device SWITCHMODE Dual Ultrafast Power Rectifier . . . designed for use in negative switching power supplies, inverters and as free wheeling diodes. Also, used in conjunction with common cathode dual Ultrafast Rectifiers, makes a single phase full–wave	Original	MUR1620CTR MUR1620CT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 transistor U1620R fast recovery diode ses5001 MUR1620CT equivalent PK MUR 460 DIODE PK MUR 460 transistor mbr4045pt 1N2069 MBRD360 Fast Recovery Diode, 24 Amperes, 600 Volts, Button Type STPS20h100	PDF
PK MUR 460 Abstract: pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360 Text: MBR340 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,	Original	MBR340 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 PK MUR 460 pk mur460 PK MUR460 1110 gi756 diode carrier 30bq015 USD1120 0525 Transient Voltage Suppressors diode A14A surface SS14 SOD123 MBRD360	PDF
OZ 9983 Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45 Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —	Original	MBRB3030CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 OZ 9983 mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45	PDF
MUR1560 equivalent Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent Text: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in	Original	MBRD835L VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MUR1560 equivalent 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent	PDF
1n5822 trr Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50 Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay	Original	MBRD1035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 1n5822 trr A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50	PDF
Diode 1N4007 DO-7 Rectifier Diode Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode Text: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced	Original	MBRM120ET3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 Diode 1N4007 DO-7 Rectifier Diode FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode	PDF
TELEVISION EHT TRANSFORMERS Abstract: BYW96E PH smd code Z9P germanium transistor BY527 EQUIVALENT BYD33D BAX12 BB212 BB515 BBY31 Text: Philips Semiconductors Diodes Contents page SELECTION GUIDE Small-signal diodes 5 Tuner diodes 7 FM detection diodes 8 Low leakage diodes 8 Schottky barrier switching diodes 9 Stabistors Voltage regulators 9 10 Voltage reference diodes 11 Transient suppressor diodes	OCR Scan	LCD01 TELEVISION EHT TRANSFORMERS BYW96E PH smd code Z9P germanium transistor BY527 EQUIVALENT BYD33D BAX12 BB212 BB515 BBY31	PDF

BYV27 200 TAP Search Results

BYV27 200 TAP Result Highlights (5)

BYV27 200 TAP Price and Stock

Vishay Semiconductors BYV27-200-TAP

Vishay Intertechnologies BYV27-200-TAP

Vishay Intertechnologies BYV27-200-TR

Vishay Semiconductors BYV27200TAP

Vishay Semiconductors BYV27/200TAP

BYV27 200 TAP Datasheets (1)

BYV27 200 TAP Datasheets Context Search

BYV27-50

Untitled

BYV27-200-TAP

Untitled

BC237

PBL and Application Note

5-phase drive STEPPER MOTOR

BYV27

stpr16

b2545 transistor

MR2835S equivalent

A14F diode

mur1650

equivalent components of diode 1N5399

mr852

MUR420 diode

diode A14A surface mount

transistor U1620R

PK MUR 460

OZ 9983

MUR1560 equivalent

1n5822 trr

Diode 1N4007 DO-7 Rectifier Diode

TELEVISION EHT TRANSFORMERS