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    BYY 48 Price and Stock

    Micron Technology Inc MTFDDAV480TGA-1BC1ZABYY

    Solid State Drives - SSD 5400 576GB M.2 SSD
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    Mouser Electronics MTFDDAV480TGA-1BC1ZABYY 273
    • 1 $143.28
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    Micron Technology Inc MTFDDAK480TGB-1BC1ZABYY

    Solid State Drives - SSD 5400 704GB 2.5in SSD
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    Mouser Electronics MTFDDAK480TGB-1BC1ZABYY 61
    • 1 $171.59
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    Micron Technology Inc MTFDDAK480TGA-1BC15ABYY

    Solid State Drives - SSD 5400 576GB 2.5in SSD
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    Mouser Electronics MTFDDAK480TGA-1BC15ABYY 45
    • 1 $153.4
    • 10 $147.57
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    Micron Technology Inc MTFDKBA480TFR-1BC1ZABYY

    Solid State Drives - SSD 7450 512GB M.2 SSD
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    Mouser Electronics MTFDKBA480TFR-1BC1ZABYY 11
    • 1 $166.88
    • 10 $161.45
    • 100 $161.45
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    Micron Technology Inc MTFDDAK480TGA-1BC1ZABYY

    Solid State Drives - SSD 5400 576GB 2.5in SSD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics MTFDDAK480TGA-1BC1ZABYY
    • 1 $186.39
    • 10 $162.4
    • 100 $162.4
    • 1000 $162.4
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    Find more BYY 48 price and stock on Findchips.com

    BYY 48 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BYS 045

    Abstract: BYS 045 v 72 BYY 56 byy 24 byy 57 1200 D 400 2200 E VRRM VRSM VBR byy 48 2209 n DA 6/1400
    Text: Low Power Diodes Kleine Leistungsdioden Rectitier diodes Type VRRM V IFSM A IFAVM A trr °C/W tvj max °C 6 - 150 IFSM A IFAVM tvj max °C 10 ms, tvj = tvj max D 6/ 1200.1600 100 Controlled avalanche diodes Type VRRM V VBR A A 10 ms, tA = 45°C tvj = tvj max


    Original     		PDF

    LG 5804

    Abstract: No abstract text available
    Text: VMMK-1218 0.5 to 18 GHz Low Noise E-PHEMT in a Wafer Scale Package Data Sheet Description Features Avago Technologies has combined it’s industry leading E-pHEMT technology with a revolutionary chip scale package. The VMMK-1218 can produce an LNA with high dynamic range, high gain and low noise figure that


    Original     		VMMK-1218 VMMK-1218 100mm 250mm AV02-1081EN LG 5804 PDF

    A004R

    Abstract: RO4350 VMMK-1218 VMMK-1218-BLKG USL10
    Text: VMMK-1218 0.5 to 18 GHz Low Noise E-PHEMT in a Wafer Scale Package Data Sheet Description Features Avago Technologies has combined it’s industry leading E-pHEMT technology with a revolutionary chip scale package. The VMMK-1218 can produce an LNA with high dynamic range, high gain and low noise figure that


    Original     		VMMK-1218 VMMK-1218 100mm 250mm AV02-1081EN A004R RO4350 VMMK-1218-BLKG USL10 PDF

    MM3Z20VT1

    Abstract: No abstract text available
    Text: SOD-323 Sma ll ssigna igna l zzene ene r d diode iode s 0.016 0.40 0.057(1.45) 200 mW Po Power wer diss ipat ion 0.010(0.25) 0.045(1.15) 0.070(1.80) Idea l fo forr ssurfac urfac e m moun oun tted app applicat licat ion 0.063(1.60) Zene r b break reak dow n vvolta


    Original     		OD-323 OD-323 MM3Z39VT1 MM3Z43VT1 MM3Z47VT1 MM3Z51VT1 MM3Z56VT1 MM3Z62VT1 MM3Z68VT1 MM3Z75VT1 MM3Z20VT1 PDF

    DIODE marking S4 59A

    Abstract: DIODE 1N4148 LL-34 Zener Diode SOD-323 marking code a2 marking v6 zener diode fairchild marking codes sot-23 RKZ18B2KG TWPEC 1w402 MTZJ SERIES ZENER DIODES 702 SOT-23 marking KJ marking 513 SOD-323
    Text: 2008.07 Renesas Diodes Status List Topic_Ultra-Small Zener Diodes " RKZ-KP Series " - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3


    Original     		REJ16G0002-2200 DIODE marking S4 59A DIODE 1N4148 LL-34 Zener Diode SOD-323 marking code a2 marking v6 zener diode fairchild marking codes sot-23 RKZ18B2KG TWPEC 1w402 MTZJ SERIES ZENER DIODES 702 SOT-23 marking KJ marking 513 SOD-323 PDF

    AAJFK

    Abstract: No abstract text available
    Text: 9?,'@ +'4? 4VVS=>AB=฀#:A0<฀&<,9=4=>:< #<:/?.>฀%?88,<C 7LHZ[XLY X฀5FIC;N@;<฀9<JK฀+ &, &ba฀@E฀2- X฀*FN<JK฀=@>LI<฀F=฀D<I@K฀0IH฀O฀/Z . "1฀9N]`Tk //* P + >M#ba$&`Tk *(+.*  .2 a= * Z&glc X฀3CKI8฀CFN฀>8K<฀:?8I>< X฀#OKI<D<฀;M ;K฀I8K<;


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: 9?,'@ 004? 4VVS=>AB=฀#:A0<฀&<,9=4=>:< #<:/?.>฀%?88,<C 7LHZ[XLY X฀*FN<JK฀=@>LI< F=฀ D<I@K฀0 IH฀O฀/Z X฀3CKI8฀CFN฀>8K<฀:?8I>< - "1฀9N]`Tk //* P + >M#ba$&`Tk *(+33  -. a= * Z&glc X฀#OKI<D<฀;M ;K฀I8K<; X฀&@>?฀G<8B฀:LII<EK฀:8G89@C@KP


    Original     		PDF

    A004R

    Abstract: MM20 RO4350 VMMK-1218 VMMK-1218-BLKG 802.11abgn
    Text: VMMK-1218 0.5 to 18 GHz Low Noise E-PHEMT in a Wafer Scale Package Data Sheet Description Features Avago Technologies has combined it’s industry leading E-pHEMT technology with a revolutionary chip scale package. The VMMK-1218 can produce an LNA with high dynamic range, high gain and low noise figure that


    Original     		VMMK-1218 VMMK-1218 100mm 250mm AV02-1081EN A004R MM20 RO4350 VMMK-1218-BLKG 802.11abgn PDF

    Untitled

    Abstract: No abstract text available
    Text: 9?,'@ ,'4? 4VVS=>AB=฀#:A0<฀&<,9=4=>:< #<:/?.>฀%?88,<C 7LHZ[XLY X฀*FN<JK฀=@>LI< F= D<I@K฀0 IH฀O฀/Z X฀3CKI8฀CFN฀>8K<฀:?8I>< - "1฀9N]`Tk //* P + >M#ba$&`Tk * ,/*  ,1 a= * Z&glc X฀#OKI<D<฀;M ;K฀I8K<; X฀&@>?฀G<8B฀:LII<EK฀:8G89@C@KP


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: 9?3,'@ 004? 4VVS=>AB=฀#:A0<฀&<,9=4=>:< #<:/?.>฀%?88,<C 7LHZ[XLY W฀*FM<IJ฀=@>KH<฀F=฀D<H@J฀0-,฀N฀/Z W฀3CJH8฀CFM฀>8J<฀:?8H>< - "1฀9N]`Tj //* P + >M#ba$&`Tj *(+33  -. a= * Z&fkc W฀#NJH<D<฀;L ;J฀H8J<; W฀&@>?฀G<8B฀:KHH<EJ฀:8G89@C@JO


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: 9?3,'@ +'4? 4VVS=>AB=฀#:A0<฀&<,9=4=>:< #<:/?.>฀%?88,<C 7LHZ[XLY X฀*FN<JK฀=@>LI<฀F=฀D<I@K฀0IH฀O฀/Z X฀3CKI8฀CFN฀>8K<฀:?8I>< - "1฀9N]`Tk //* P + >M#ba$&`Tk *(+.*  .2 a= * Z&glc X฀#OKI<D<฀;M ;K฀I8K<; X฀&@>?฀G<8B฀:LII<EK฀:8G89@C@KP


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: 9?9,'@ ,'4? 4VVS=>Aa฀#:A0<฀&<,9=4=>:< #<:/?.>฀%?88,<C 7LHZ[XLY X฀*FN<JK฀=@>LI< F= D<I@K฀0 IH฀O฀/Z X฀3CKI8฀CFN฀>8K<฀:?8I>< - "1฀9N]`Tk //* + >M#ba$&`Tk * ,/*  ,1 a= * Z&glc P X฀#OKI<D<฀;M ;K฀I8K<; X฀&@>?฀G<8B฀:LII<EK฀:8G89@C@KP


    Original     		PDF

    LG 5804

    Abstract: VMMK-1218-BLKG RGS 13/1 PHEMT marking code a BYY 56 byy 88 A004R MM20 RO4350 VMMK-1218
    Text: VMMK-1218 0.5 to 18 GHz Low Noise E-PHEMT in a Wafer Scale Package Data Sheet Description Features Avago Technologies has combined it’s industry leading E-pHEMT technology with a revolutionary chip scale package. The VMMK-1218 can produce an LNA with high dynamic range, high gain and low noise figure that


    Original     		VMMK-1218 VMMK-1218 100mm 250mm AV02-1081EN LG 5804 VMMK-1218-BLKG RGS 13/1 PHEMT marking code a BYY 56 byy 88 A004R MM20 RO4350 PDF

    Untitled

    Abstract: No abstract text available
    Text: 9?3,'@ ,'4? 4VVS=>AB=฀#:A0<฀&<,9=4=>:< #<:/?.>฀%?88,<C 7LHZ[XLY W฀*FM<IJ฀=@>KH<฀F=฀D<H@J฀0IH฀N฀/Z W฀3CJH8฀CFM฀>8J<฀:?8H>< - "1฀9N]`Tj //* P + >M#ba$&`Tj * ,/*  ,1 a= * Z&fkc W฀#NJH<D<฀;L ;J฀H8J<; W฀&@>?฀G<8B฀:KHH<EJ฀:8G89@C@JO


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: 9?9,'@ +'4? 4VVS=>Aa฀#:A0<฀&<,9=4=>:< #<:/?.>฀%?88,<C 7LHZ[XLY X฀5FIC;N@;<฀9<JK฀+ &, &ba฀@E฀2- X฀*FN<JK฀=@>LI<฀F=฀D<I@K฀0IH฀O฀/Z . "1฀9N]`Tk //* P + >M#ba$&`Tk *(+.*  .2 a= * Z&glc X฀3CKI8฀CFN฀>8K<฀:?8I>< X฀#OKI<D<฀;M ;K฀I8K<;


    Original     		PDF

    SW2100D

    Abstract: RFSW2100D ds1303
    Text: R RFSW2 2100D 55W GaN-on-SiC Refflective SPD DT RF Switch Bare Die 1mm x 0.8m mm Features • Broadban nd Operation 30 0MHz - 6GHz  Advanced d GaN HEMT Tecchnology  2GHz Typical Performancce o Insertio on Loss = 0.34d dB o Isolation = 37dB o P0.1dB of


    Original     		2100D RFSW2100D DS130314 SW2100D ds1303 PDF

    Untitled

    Abstract: No abstract text available
    Text: 9?E,'@ +'4? 4VVS=>AB=฀#:A0<฀&<,9=4=>:< #<:/?.>฀%?88,<C 7LHZ[XLY X฀5FIC;N@;<฀9<JK฀+ &, &ba฀@E฀2- X฀*FN<JK฀=@>LI<฀F=฀D<I@K฀0IH฀O฀/Z . "1฀9N N]`Tk //* P + >M#ba$&`Tk *(+.*  .2 a= * Z&glc X฀3CKI8฀CFN฀>8K<฀:?8I>< X฀#OKI<D<฀;M ;K฀I8K<;


    Original     		26892F 009-134-A O-247 PG-TO247-3 O-247, PDF

    Untitled

    Abstract: No abstract text available
    Text: 9?E,'@ 004? 4VVS=>AB=฀#:A0<฀&<,9=4=>:< #<:/?.>฀%?88,<C 7LHZ[XLY X฀*FN<JK฀=@>LI<฀F=฀D<I@K฀0IH฀O฀/Z X฀3CKI8฀CFN฀>8K<฀:?8I>< - "1฀9N N]`Tk //* P + >M#ba$&`Tk *(+33  -. a= * Z&glc X฀#OKI<D<฀;M ;K฀I8K<; X฀&@>?฀G<8B฀:LII<EK฀:8G89@C@KP


    Original     		26892F 009-134-A O-247 PG-TO247-3 O-247, PDF

    Untitled

    Abstract: No abstract text available
    Text: 9?E,'@ ,'4? 4VVS=>AB=฀#:A0<฀&<,9=4=>:< #<:/?.>฀%?88,<C 7LHZ[XLY X฀*FN<JK฀=@>LI< F= D<I@K฀0 IH฀O฀/Z X฀3CKI8฀CFN฀>8K<฀:?8I>< - "1฀9N N]`Tk //* P + >M#ba$&`Tk * ,/*  ,1 a= * Z&glc X฀#OKI<D<฀;M ;K฀I8K<; X฀&@>?฀G<8B฀:LII<EK฀:8G89@C@KP


    Original     		26892F 009-134-A O-247 PG-TO247-3 O-247, PDF

    rjp3053

    Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
    Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5


    Original     		REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009 PDF

    D405N

    Abstract: AEG T 51 N 1200 AEG D 251 N 1200 D24NR d629n aeg tt 18 n 1200 BYY 56 aeg tt 46 n 1200 D 4409 N 200 AEG T 670 N 2200
    Text: 1 7E D • GDSTMSb G 0 D 1 3 2 T ö ■ T - O l- O l Leistungsdioden Power diodes Diodes de puissance Typ Ifrmsm Vrrm Type V' A Ifsm t-10nns M= Wjmax 45°C t-10nns M“ Wjmax 45°C kA kA A s A*s Ifavm/*c IpAVM A/°C tA=45*C 120°el. rec. A V TO tA =35aC


    OCR Scan     		G0D132T t-10r BYY57/ BYY58/ 20x20 100x125 D24NR 41/mln. D3507N D405N AEG T 51 N 1200 AEG D 251 N 1200 d629n aeg tt 18 n 1200 BYY 56 aeg tt 46 n 1200 D 4409 N 200 AEG T 670 N 2200 PDF

    D668N

    Abstract: D798N400 d629n D4409 Leistungsdiode d452 BYY 56 D4409N D668N2000 D668
    Text: A E G - A K T I EN GE SEL LS CHAFT 17E D • QOBWS 1 ■ AEGG Leistungsdioden Power diodes Diodes de puissance Typ Type V rrm If r m s m V' A If s m /¡ 2dt t-10nn* «vp •vjnnax 45°C t-IOnn* M" 45°G •vjmax kA kA fl?S A*s If a v m / ì c If a v m V TO


    OCR Scan     		tA-45 BYY57/ BYY58/ 20x20 100x125 D24NR 41/mln. D668N D798N400 d629n D4409 Leistungsdiode d452 BYY 56 D4409N D668N2000 D668 PDF

    RTM 866 - 480

    Abstract: SAK 110 TAA775G ITT TCA 700 Y SAJ 220 SG 2368 ITT 90 38 TCA 700 Y SAJ110 TCA 430 taa790
    Text: Halbleiter­ bauelemente 1972/73 INTERMETALL H albleiterwerk der Deutsche ITT Industries GmbH ITT Alphabetisches Typenverzeichnis Typ S eite Typ S eite Typ Seite 1 N 914 42 2 N 3055 38 BB 121 1 N914A 1 N914B 1 N 3604 42 42 42 2 N 3962 33 BB 122 2 N 3963 2 N 3964


    OCR Scan     		N914A N914B RTM 866 - 480 SAK 110 TAA775G ITT TCA 700 Y SAJ 220 SG 2368 ITT 90 38 TCA 700 Y SAJ110 TCA 430 taa790 PDF

    ZPD 5.1 ITT

    Abstract: ZPD ITT diode zener ZD 88 germanium BYY32 germanium transistor CJ 4148 ZENER BAW21 ITT ZPD 11 itt germanium diode
    Text: General Information Germanium Gold Bonded Diodes Silicon Diodes Silicon Capacitance Diodes Silicon Diode Switches PIN Diodes Silicon Zener Diodes and Temperature Compensated Stabilizing Circuits Silicon Stabilizer Diodes Light Emitting Diodes Silicon Rectifiers


    OCR Scan     		F-92223 D-7800 ZPD 5.1 ITT ZPD ITT diode zener ZD 88 germanium BYY32 germanium transistor CJ 4148 ZENER BAW21 ITT ZPD 11 itt germanium diode PDF