Untitled
Abstract: No abstract text available
Text: LINEAR TECHNOLOGY CORP 43E D • SSlSMbfl 0D051A2 7 « L T C RH1011 ■— T -7 3 -5 3 Voltage C om parator DESCRIPTION ABSOLUTE M A X IM U M RATINGS The RH1011 is a general purpose comparator with significantly better input characteristics than the LM 111. Although pin compatible with the LM 111, it
|
OCR Scan
|
0D051A2
RH1011
RH1011
|
PDF
|
245A-02
Abstract: No abstract text available
Text: MOTOROLA SC XSTRS/R F 2bE D h3b7254 O Q m M S Ö MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA Discrete Military Products PNP/NPN Silicon Complementary Power Darlington Transistors mo M JM 6052 111/111 (NPN) (PNP) M JM 6059 Suffixes: HX, H X V Processed per
|
OCR Scan
|
h3b7254
MIL-S-19500/
O-116)
245A-02
|
PDF
|
MOTOROLA 2n2920
Abstract: 2N2920 2N2920JAN
Text: MOTOROU Order this document by 2N2920JANID SEMICONDUCTOR TECHNICAL DATA @ 2N2920JAN, JTX, JTXV, JANS Processed per MIL4-I ,111, t ,11111 411 .,.:,>$’ \.>.l , c*\~ ~!.?,:$,! a- 9500/355 ual N,PNSilicon Small+ ignal Transistors .!. 3 Unit Vdc Vdo VEBO Emitter+ase Vohge
|
Original
|
2N2920JANID
2N2920JAN,
S50SS.
1PHW4101
2N292W~
MOTOROLA 2n2920
2N2920
2N2920JAN
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SGS-THOMSON :IL[i g?GMD § M S C 8 1 111 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS • EM ITTER BALLASTED ■ R E FR AC TO R Y /G O LD M ETALLIZATION ■ VSW R C APABILITY oo:1 @ RATED C O N D ITIO N S ■ HERM ETIC STRIPAC PACKAGE
|
OCR Scan
|
MSC81111
|
PDF
|
Untitled
Abstract: No abstract text available
Text: KSR2111 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION B ias R esistor Built In • Sw itching circuit, Inverter, Interface circuit, D river C ircuit • Built in bias R esistor (R=22K£1) • C om plem ent to K S R 1 111 S O T-23 ABSOLUTE MAXIMUM RATINGS (TA=25°C)
|
OCR Scan
|
KSR2111
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Low Voltage Regulators IV I BA704 BA707 111 Nfïl Dimensions Unit: mm 4.0 =0.2 V C .6 C = Voltage Fig. 1 Block Diagram OUTPUT —O Features 1. 2. 3. 4. 5. 6. Wide input voltage range. Excellent line regulation. Excellent load regulation. Excellent temperature stability.
|
OCR Scan
|
BA704
BA707
BA707
BA707â
|
PDF
|
TIP110
Abstract: 2A 80v complementary transistor TIP110 transistor TIP11 TIP111 TIP112 lc 112
Text: NPN EPITAXIAL TIP110/111/112 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ VCe=4V, lc=1A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE • C om plem entary to T IP 1 15/116/117
|
OCR Scan
|
TIP110/111/112
TIP115/116/117
O-220
TIP110
TIP111
TIP112
-TIP11
2A 80v complementary transistor
TIP110 transistor
TIP11
TIP111
TIP112
lc 112
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP115/116/117 HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE= -4V, lc= -1A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE C om plem entary to T IP 1 10/111/112
|
OCR Scan
|
TIP115/116/117
TIP115
TIP117
TIP116
|
PDF
|
TIP115
Abstract: TIP117 TIP116 2A 80v complementary transistor 60V transistor npn 2a
Text: PNP EPITAXIAL TIP115/116/117 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE= -4V, lc= -1A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE • C om plem entary to T IP 1 10/111/112
|
OCR Scan
|
TIP115/116/117
TIP110/111/112
O-220
TIP115
TIP116
TIP117
Temperatu-10V,
TIP117
TIP116
2A 80v complementary transistor
60V transistor npn 2a
|
PDF
|
TIP NPN
Abstract: TIP110 TIP111 TIP112 TIP115 TIP116 TIP117 tip 115
Text: TIP110, TIP111, TIP112 TIP115, TIP116, TIP117 TIP 110, 111, 112 TIP 115,116,117 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS General Purpose Darlington Amplifier and Low Speed Switching Applications DIM A B C D E F G H J K L U N MIN MAX 16.51
|
OCR Scan
|
TIP110,
TIP111,
TIP112
TIP115,
TIP116,
TIP117
TIP NPN
TIP110
TIP111
TIP115
TIP116
TIP117
tip 115
|
PDF
|
Untitled
Abstract: No abstract text available
Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP110/111/112 HIGH DC CURRENT GAIN MIN hFE =1000 @ V ce = 4V, I c =1A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO-220 Com plem ent to TIP115/116/117
|
OCR Scan
|
TIP110/111/112
TIP115/116/117
O-220
|
PDF
|
tip 115
Abstract: No abstract text available
Text: TIP110, TIP111, TIP112 TIP115, TIP116, TIP117 TIP 110, 111, 112 TIP 115,116,117 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS General Purpose Darlington Amplifier and Low Speed Switching Applications Ö ° Jo I Ü ¡H DIM A B C E F G H J K L
|
OCR Scan
|
TIP110,
TIP111,
TIP112
TIP115,
TIP116,
TIP117
tip 115
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PNP EPITAXIAL TIP115/116/117 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE= -4V, lc= -1A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE • C om plem entary to T IP 1 10/111/112
|
OCR Scan
|
TIP115/116/117
TIP115
|
PDF
|
T1P112
Abstract: T1P111
Text: TIP110, TIP111, TIP112 TIP115, TIP116, TIP117 TIP 110, 111, 112 TIP 115,116,117 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS General Purpose Darlington Amplifier and Low Speed Switching Applications DIM A B C D E F G H J K L M N MIN MAX 16.51
|
OCR Scan
|
TIP110,
TIP111,
TIP112
TIP115,
TIP116,
TIP117
23633T4
T1P112
T1P111
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: NPN EPITAXIAL TIP110/111/112 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ V ce=4V, lc=1 A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE • C om plem entary to T IP 1 15/116/117
|
OCR Scan
|
TIP110/111/112
TIP110
|
PDF
|
MCD206
Abstract: BLV13 PHHI philips Trimmer 60 pf sot123 ceramic capacitor 47 pf MC-02C
Text: 0020125 Philips Sem iconductors 75 B APX Product specification VHF power transistor ^ A U E P H ILIP S /D IS C R E TE b^E • Gold metallization ensures excellent reliability. MODE OF OPERATION c.w. class-B f MHz 175 111 O > Emitter-ballasting resistors for an
|
OCR Scan
|
BLV13
OT123
PINNING-SOT123
MBA45t
MCD21
MCD206
BLV13
PHHI
philips Trimmer 60 pf
sot123
ceramic capacitor 47 pf
MC-02C
|
PDF
|
mpc5023
Abstract: Oa05 MPC5201 HPC5020 Oa203 OA206 OA202 NEC bidirectional zener diodes OA03A OP 7241
Text: MW 3 1993 111 t V ANALOG MASTER BIPOLAR LINEAR ARRAYS c h s , v -c h s , m -c h s Series - NEC Electronics Inc. March 1993 Description Figure 1. Typical Analog Master Die NEC's Analog M aster fam ilies CHS, V-CHS, M-CHS Series are bipolar linear arrays for developing analog
|
OCR Scan
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: NPN EPITAXIAL TIP110/111/112 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ V ce=4V, lc=1 A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE • C om plem entary to T IP 1 15/116/117
|
OCR Scan
|
TIP110/111/112
TIP110
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP115/116/117 HIGH DC CURRENT GAIN MIN hFE= 1000 @ V c e = — 4V, lc = - 1 A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO-220 Com plem ent to TIP110/111/112
|
OCR Scan
|
TIP115/116/117
TIP110/111/112
O-220
|
PDF
|
irf113
Abstract: IRFF110 IRFF RFF-11
Text: SILI CON I X 1ÖE D INC ilicoont. C T ’S S ilic ix_ X M • 025*4735 001470 ^ 3 ■ IRFF110/111/112/113 in c o rp o r a t e d inci N-Channel Enhancement Mode Transistors T -^ o i -0 7 TO-205AF BOTTOM VIEW PRODUCT SUMMARY to PART NUMBER V BR|DSS IRFF11Q
|
OCR Scan
|
AES473S
IRFF110/111/112/113
O-205AF
IRFF11Q
IRFF111
IRFF112
IRFF113
Junction111/112/113
DQ147TE
T-39-07
irf113
IRFF110
IRFF
RFF-11
|
PDF
|
MPQ2907
Abstract: c-300mA MPQ2906 1-B215
Text: Data Sheet MPQ2906 MPQ2907 PNP S IL IC O N QUAD TRANSISTOR S e m ic o n d u c to r C o rp . 145 Adams Ave., Hauppauge, N Y 11788 USA Phone 516 435-111 0 JEDEC T O - 116 CASE FAX (516) 4 3 5 -1 8 2 4 Manufacturers of World Class Discrete Semiconductors DESCRIPTION
|
OCR Scan
|
MPQ2906
MPQ2907
O-116
MPQ2906,
MPQ2907
150mA,
300mA,
MPQ2906)
MPQ2907)
c-300mA
1-B215
|
PDF
|
144111P
Abstract: MC144110-MC144111 144110P
Text: MOTOROLA O rd e r th is d o c u m e n t by M C 14 411 0/D SEMICONDUCTOR TECHNICAL DATA D igital-to-A nalog Converters w ith Serial In terface M C 144110 M C 144 111 CMOS LSI T he M C 144110 and MC144111 are lo w -c o s t 6 - b it D/A con verters with serial
|
OCR Scan
|
MC144111
MC144110/D
144111P
MC144110-MC144111
144110P
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BCX54 BCX55 BCX56 SOT89 NPN SILICON PLANAR M EDIUM POWER TRANSISTORS ISSU E 3 - FEBRUARY 1996 O % PARTM ARKING DETAILS:BCX54 - BA BCX54-10 - BC BCX55 - BE BCX55-10 - BG BCX56 - BH BCX56-10 - BK BCX54-16 - BD BCX55-16 - BM BCX56-16 - BL 111 C O M PLEM EN TA RY TYPES:BCX54 - BCX51
|
OCR Scan
|
BCX54
BCX55
BCX56
BCX54
BCX54-10
BCX55
BCX55-10
BCX56
BCX56-10
BCX54-16
|
PDF
|
BU140
Abstract: bc140 BC140-10 BC141 BC141-16 BC140-16 BC141-10 BC-141 BC160 BC161
Text: N AUER b*iE ]> PHILIPS/DISCRETE • bbSBTBl ÜQ27SD7 A 111 BU140 BC141 SILICO N PLANAR EPITAXIAL T R A N SIST O R S N-P-N transistors in TO -39 metal envelopes for general purpose applications. P-N-P complements are B C 16 0 and BC161. Q U IC K R E F E R E N C E D A T A
|
OCR Scan
|
Q27SD7
BU140
BC141
BC160
BC161.
BC140
BC140-10
BC140-16
BC141-10
BC141
BC141-16
BC140-16
BC-141
BC161
|
PDF
|
