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    C 129 TRANSISTOR Search Results

    C 129 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    C 129 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    c 129 transistor

    Abstract: Heatsinks to-220 Heatsinks SK129 TO-220 transistor TO 220 WITH 4 PINS aa90 SOT32 A9089
    Text: Hola1 H A H Extruded heatsinks for PCB mounting for semiconductor clip-mounting B C D art. no. SK SK SK SK E 129 129 129 129 25,4 38,1 50,8 63,5 [mm] . . . . please indicate: F TO 220 TO 220 TO 220 TO 220 Rth [K/W] 25.4 38.1 50.8 63.5 7.8 6.5 5.3 4.5


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    Untitled

    Abstract: No abstract text available
    Text: BCR 129 NPN Silicon Digital Transistor Preliminary data • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7kΩ Type Marking Ordering Code Pin Configuration BCR 129 WVs 1=B Q62702- Package 2=E 3=C SOT-23 Maximum Ratings


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    PDF Q62702- OT-23 Nov-26-1996

    Untitled

    Abstract: No abstract text available
    Text: BCR 129 NPN Silicon Digital Transistor 3 • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=10kΩ 2 C 3 1 VPS05161 R1 1 2 B E EHA07264 Type Marking BCR 129 WVs Pin Configuration 1=B 2=E Package 3=C SOT-23 Maximum Ratings


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    PDF VPS05161 EHA07264 OT-23 Oct-19-1999

    MAPHST0034

    Abstract: MAPHST MAPHS VCC36 9-GHz c 129 transistor
    Text: MAPHST0034 RADAR PULSED POWER TRANSISTOR 129 WATTS, 2.70-2.90 GHz, 100µs PULSE, 10% DUTY Datasheet 032803 ECRIEE OUTLINE DRAWING FEATURES ∗ NPN Silicon Microwave Power Transistor ∗ Common Base Configuration ∗ Broadband Class C Operation ∗ High Efficiency Interdigitated Geometry


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    PDF MAPHST0034 29Wpk, MAPHST0034 MAPHST MAPHS VCC36 9-GHz c 129 transistor

    Untitled

    Abstract: No abstract text available
    Text: IPB039N10N3 G  3 Power-Transistor Product Summary Features P฀' 381>>5<฀>?A=1<฀<5E5< P฀G35<<5>C฀71C5฀381A75฀G฀R 9H"[Z#฀@A?4D3C฀ & V 9H ( J R 9H"[Z#$YMc +&1 Y I9 ).( 6 P฀.5AH฀<?F฀?> A5B9BC1>35฀R 9H"[Z# P฀"978฀3DAA5>C฀31@129<9CH


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    PDF IPB039N10N3 381A75à C1A75Cà 931C9? C85AF9B5à

    Untitled

    Abstract: No abstract text available
    Text: IPB025N10N3 G  3 Power-Transistor Product Summary Features P฀' 381>>5<฀>?A=1<฀<5E5< P฀G35<<5>C฀71C5฀381A75฀G฀R 9H"[Z#฀@A?4D3C฀ & V 9H ( J R 9H"[Z#$YMc *&- Y I9 )0( 6 P฀GCA5=5<H฀<?F฀?> A5B9BC1>35฀R 9H"[Z# P฀"978฀3DAA5>C฀31@129<9CH


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    PDF IPB025N10N3 381A75à C1A75Cà 931C9? C85AF9B5à

    E7941

    Abstract: E6327 Q67000-S073 Q67000-S314 bsp129
    Text: BSP 129 SIPMOS Small-Signal Transistor ● ● ● ● ● ● ● VDS 240 V ID 0.2 A RDS on 20 Ω N channel Depletion mode High dynamic resistance Available grouped in VGS(th) Type Ordering Code Tape and Reel Information Pin Configuration Marking Package


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    PDF Q67000-S073 E6327: OT-223 Q67000-S314 E7941: E7941 E6327 bsp129

    E7941

    Abstract: c 129 transistor Q67000-S073 E6327 Q67000-S314 BSP 17 D 21001A
    Text: SIPMOS Small-Signal Transistor ● ● ● ● ● ● ● BSP 129 VDS 240 V ID 0.2 A RDS on 20 Ω N channel Depletion mode High dynamic resistance Available grouped in VGS(th) Type Ordering Code Tape and Reel Information Pin Configuration Marking Package


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    PDF Q67000-S073 E6327: OT-223 Q67000-S314 E7941: E7941 c 129 transistor E6327 BSP 17 D 21001A

    c 129 transistor

    Abstract: transistor c 129 Q67000-S073 SIPMOS E6327 BSP129
    Text: BSP 129 SIPMOS Small-Signal Transistor ● VDS 240 V ● ID 0.2 A ● RDS on 20 Ω ● N channel ● Depletion mode ● High dynamic resistance Type Ordering Code Tape and Reel Information Pin Configuration Marking Package BSP 129 Q67000-S073 E6327: 1000 pcs/reel


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    PDF Q67000-S073 E6327: OT-223 c 129 transistor transistor c 129 SIPMOS E6327 BSP129

    SS129

    Abstract: ss 129 transistor c 129 Q62702-S015 Q67000-S116 G3SS bss 100 transistor 129 to-92
    Text: SIPMOS Small-Signal Transistor ● ● ● ● ● ● ● BSS 129 VDS 240 V ID 0.15 A RDS on 20 Ω N channel Depletion mode High dynamic resistance Available grouped in VGS(th) Type Ordering Code 2 1 Tape and Reel Information Pin Configuration Marking


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    PDF Q62702-S015 E6288: Q67000-S116 E6296: SS129 ss 129 transistor c 129 G3SS bss 100 transistor 129 to-92

    SS129

    Abstract: Q62702-S015 Q67000-S116
    Text: BSS 129 SIPMOS Small-Signal Transistor ● ● ● ● ● ● ● VDS 240 V ID 0.15 A RDS on 20 Ω N channel Depletion mode High dynamic resistance Available grouped in VGS(th) Type Ordering Code 2 1 Tape and Reel Information 3 Pin Configuration Marking Package


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    PDF Q62702-S015 E6288: Q67000-S116 E6296: SS129

    ss129

    Abstract: transistor marking 7D
    Text: SIPMOS Small-Signal Transistor BSS 129 • Vds • ID • • • • • 240 V 0.15 A ^D S on 2 0 Q N channel Depletion mode High dynamic resistance Available grouped in Vg^ Type Ordering Code Tape and Reel Information Pin C onfigu ration Marking BSS 129 Q62702-S015 E6288:1500 pcs/reel;


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    PDF Q62702-S015 E6288 Q67000-S116 E6296 ss129 transistor marking 7D

    Untitled

    Abstract: No abstract text available
    Text: BSS 129 Infine on technologies SIPMOS Small-Signal Transistor • • • • • • • 240 V 0.15 A ^DSfon 20 O N channel Depletion mode High dynamic resistance Available grouped in VGs th> V DS 1D Type Pin C onfigu ration Marking Tape and Reel Information


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    PDF Q62702-S015 E6288 Q67000-S116 E6296: 235b05 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5

    transistor Bs 998

    Abstract: No abstract text available
    Text: SIEM ENS Silicon N Channel MOSFET Tetrode BF 998 F e a tu re s • Short-channel transistor with high S/C quality factor • For low-noise, gain-controlled input stages up to 1 GHz 5:1 Type B F 998 M arking MO O rd ering C o d e tape and reel 1 Q 6 2 7 0 2 -F 1 129


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    PDF BB515 p270k2 transistor Bs 998

    UPC1296

    Abstract: UPC1296G D1713G 2SK519 MPD1708 tv sound ic 10 pin S907N C1248V SFZ-450GL K5-19
    Text: IPOLAR ANALOG INTEGRATED CIRCUIT /¿ P C I 2 9 6 G ELECTRONIC TUNING AM RADIO RECEIVER SUBSYSTEM D E S C R IP TIO N The iiPC 129$G is a m onolithic integrated circuit used in an electronic tuner E.T for A M radio o f car radio or car stereo. The circuit contains a RF am plifier, a mixer, an oscillator, an oscillator buffer, IF amplifiers, a detector, AG C circuits,


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    PDF uPC1296G PC1296G juPD1713G UPC1296 D1713G 2SK519 MPD1708 tv sound ic 10 pin S907N C1248V SFZ-450GL K5-19

    ON5040

    Abstract: l 129 v BSS129a 061f 129 to-92 bss t3 BSS129
    Text: S IE M I SIPMOS Small-Signal Transistors ,s JSIon BSP 129 BSS 129 = 240 V = 0.19/0.15 A = 20 Q SOT-223 BSP 129) ^ N channel Depletion mode X S s S Packages: SOT-223, D T O -9 2 1) Type TO-92 (BSS 129) G S G Ordering code for version in bulk Ordering code


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    PDF OT-223 OT-223, Q67000-S030 Q62702-S510 12-mm Q67000-S073 Q62702-S510-P1 VK00270 SIK00300 ON5040 l 129 v BSS129a 061f 129 to-92 bss t3 BSS129

    bc204

    Abstract: 2N4248 2N4249 BC205 2N4250 BC204A BC204b fairchild semiconductors BC205A BC206b
    Text: Sem iconductors Fairchild Sem iconductors Silicon Small Signal Transistors P N P Low Level, Low Noise Amplifier Transistors Plastic Package TOIOC, T 092 REFERENCE T A BLE Max Ratings Cod« BC204 BC204A BC204B BC205 BC205A BC205B BC206A BC206B BC206C BC320


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    PDF BC204 35349H BC204A 35350X BC204B 35351R BC205 80/typ) 35352G BC205A 2N4248 2N4249 2N4250 fairchild semiconductors BC206b

    BC319B

    Abstract: BF337 BC115 BC114 BC207 BC113 BC207A BC207b fairchild semiconductors BC208
    Text: Fairchild Sem iconductors Sem iconductors Silicon Small Signal Transistors NPN Low Level, Low Noise Amplifier Transistors Plastic Package T092, T O IM REFERENCE T A B LE M a x R a tin g s Co d e Vceo V o lts Ptot T a — 25*C M in mW C h a r a c te r is tic s @


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    PDF BC113 35289X BC114 35Z90C BC115 6291A BC207 35292X BC207A 35293H BC319B BF337 BC207b fairchild semiconductors BC208

    ss129

    Abstract: No abstract text available
    Text: SIEMENS SIPMOS Small-Signal Transistor • FDS 240 v • /„ 0.15 A • ^ D S o n 20 Q • • • • N channel Depletion mode High dynamic resistance Available grouped in FGS(th) Type Ordering Code B S S 129 Tape and Reel Information PinC onfigu ration Marking


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    PDF Q62702-S510 Q62702-S015 E6288 Q67000-S116 E6296 SIK02548 ss129

    bc207

    Abstract: ME1120 bc208 BC209 BC113 BC207b BC209C BC107B fairchild BC207A BC209B
    Text: Fairchild Sem iconductors Sem iconductors Silicon Small Signal Transistors N P N Low Level, Low Noise Amplifier Transistors Plastic Package T092, T O IM REFERENCE TABLE Max Ratings Code BC113 BC114 BC115 BC207 BC207A BC207B BC203 BC208A BC20IB BC209 BC209B


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    PDF BC113 35289X BC114 35Z90C BC115 6291A BC207 35292X BC207A 35293H ME1120 bc208 BC209 BC207b BC209C BC107B fairchild BC209B

    MARKING CODE AGS

    Abstract: TRANSISTOR BSP 2000
    Text: SIEMENS SIPMOS Small-Signal Transistor • • ID Fds 240 V 0.2 A • ^ D S o n 20 Q • • • • N channel Depletion mode High dynamic resistance Available grouped in FGS(th) Type Ordering Code BSP 129 Tape and Reel Information Pin Conf igura tion Marking


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    PDF Q67000-S073 E6327 Q67000-S314 E7941 OT-223 MARKING CODE AGS TRANSISTOR BSP 2000

    BC207b

    Abstract: BC113 SGS BC208A BC209B BC207A BF257 BC113 BC114 BC209 BC208 transistor
    Text: Fairchild Sem iconductors Semiconductors Silicon Small Signal Transistors NPN Low Level, Low Noise Amplifier Transistors P lastic P ack ag e T 0 9 2 , T O IM REFERENCE TABLE Max Ratings Characteristics @ 25‘ C Code V c e o Pt o t Volts T a — 25*C mW


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    PDF BC113 35289X BC114 35Z90C BC115 6291A BC207 35292X BC207A 35293H BC207b BC113 SGS BC208A BC209B BF257 BC209 BC208 transistor

    AD143

    Abstract: ad148 ASZ1015 Germanium Power Devices
    Text: GERMANIUM POWER TRANSISTORS PRO ELECTRON TYPES CURRENT C A IN at Type Number ^ 1*0 V ^ CEO y Y ebo y max 32 32 32 - 64 64 64 80 80 50 50 50 32 40 40 40 55 22 22 22 55 80 40 32 32 50 50 50 35 26 26 30 30 32 32 100 100 100 A D Y 10 ADY11 A D Y 12 AD Y13 A D Y 20


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    PDF ADY11 ADY27 NS257 AD143 ad148 ASZ1015 Germanium Power Devices

    AD149

    Abstract: ASZ18 ASZ15 ASZ1015 ASZ16 ADY26 AD148 ASZ1018 AD133 ASZ17
    Text: GERMANIUM POWER TRANSISTORS PRO ELECTRON TYPES CURRENT C A IN at R. j-case °C !W max Outlines 0.35 0.35 0.35 0.35 0.35 0.35 1.5 1.5 1.5 1.5 1.5 1.5 127 127 127 127 127 127 A D 130— 111 — IV —V A D 131— III — IV — V 1 1 5 5 5 0.35 0.35 0.3 0.3


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    PDF AD130 AD130â AD131 AD131â AD132 AD132â AD133 AD133â NS257 T0-18 AD149 ASZ18 ASZ15 ASZ1015 ASZ16 ADY26 AD148 ASZ1018 AD133 ASZ17