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    C 1971 TRANSISTOR Search Results

    C 1971 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    C 1971 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Application of the SN74141N I.C. to Driving Multidecade Display Tubes A pplication Report B110 Texas Instruments Limited • Manton Lane • Bedford • Phone 0234 67466 • Telex 82178 C opyright 1971 by Texas Instruments Lim ited. A ll Rights Reserved. This publication,


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    SN74141N PDF

    T1P127

    Abstract: T1P-127 TIP12Q
    Text: TIP120, TIP121, TIP122 NPN SILICON POWER DARLINGTONS Copyrlgm C 1997, Pow er Innovations Limited, U K_ D E C E M B E R 1971 - R E V IS E D M A R C H 1997 • Designed for Complementary Use with TIPI 25, T1P126 end T1P127 • 65 W at 25°C Case Temperature


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    TIP120, TIP121, TIP122 T1P126 T1P127 O-220 TIP120 TCS12QAC T1P-127 TIP12Q PDF

    2N4862

    Abstract: PG1010 API Electronics transistor 1012 PG1001 PG1002 PG1003 PG1004 PG1005 PG1006
    Text: :a "p I ELEC T R O N IC S IN C : 13 . / ,-Í3A00 75t DE~J QD43Scì2 0G0D07S 1 ^ - fa - INTERIM BULLETIN Subject to Revision W ithout Notice -July 15, 1971 POWER TRANSISTOR ENGINEERING BULLETIN * 3 n “O n m o v P I R G O E L E C T R o n ic s iñc. ; Z ^ rJ


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    QD43Sc 0G0D07S PG1001 PG1017, T0-46 PG1002 PG1003 2N4862 PG1004 PG1010 API Electronics transistor 1012 PG1005 PG1006 PDF

    transistor 2N 2222 h 331

    Abstract: transistor marking wv4 GI 312 diode NBX 2102 marking 1Nco 2N5926 JANTX rial mci TRANSISTOR wv4
    Text: I INCH-PQUKITT M IL-S-l9500/447A ER 10 J u n e 1991 ctiDrDcrntkir u * nu MIL-S-19500/447(ER) 19 February 1971 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, MPN, SILICON, POWER, T V O r I ITL 9 1 I C Û O C , u1nA nM IT Va nA Mn uf\ ul An Un Ti Va Vi


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    MIL-S-19500/447A MIL-S-19500/447 2N5926, MIL-S-19500. 5961-A006) transistor 2N 2222 h 331 transistor marking wv4 GI 312 diode NBX 2102 marking 1Nco 2N5926 JANTX rial mci TRANSISTOR wv4 PDF

    2N1050A

    Abstract: T 3036 2N1047A 2N1049A 2N1048A 2n1048 2N1049
    Text: MIL I C | 000D12S DDDaDfl? T | SPECS M I L - S - l9 5 0 0 /1 7 6B 13 December 1971 SUPERSEDING M IL -S -1 9 5 0 0 /1 7 6A 10 N ovem ber 1965 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER TYPES 2N1047A, 2N1048A, 2N1049A AND 2N1050A


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    000D12S MIL-S-l9500/176B MIL-S-19500/176A 2N1047A, 2N1048A, 2N1049A 2N1050A 2N1047A 2N1048A 2N1050A T 3036 2n1048 2N1049 PDF

    2SC1971

    Abstract: transistor 2sc1971 RF POWER TRANSISTOR NPN 2sc1971 2Sc1971 transistor 2sc1971 application note NJ100 33MF RF POWER TRANSISTOR transistor 6w N50q
    Text: MITSUBISHI RF POWER TRANSISTOR 2SC1971 NPN EP IT A X IA L PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2S C 1971 is a silicon N PN epitaxial planar ty p e transistor designed Dimensions in mm fo r R F pow er am plifiers on V H F band m obile radio applications.


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    2SC1971 2SC1971 175MHz T0-220 175MHz. T-30E 175MH2 transistor 2sc1971 RF POWER TRANSISTOR NPN 2sc1971 2Sc1971 transistor 2sc1971 application note NJ100 33MF RF POWER TRANSISTOR transistor 6w N50q PDF

    API Electronics

    Abstract: PG1024 DD0007 PG1018 PG1019 PG1020 PG1021 PG1022 PG1023 PG1035
    Text: A P I .».3 * 0077 / E L E C T R O N I C S I NC ri m T| D 0 4 3 S c12 0 D 0 D 0 7 ? S ; I* INTERIM BULLETIN S ubject to Revision W ithout Notice -Ju ly 15, 1971 POWER TRANSISTOR ENGINEERING BULLETIN TYPE PG1018 thru PG1035, 2 A M P NPN SILICO N PLANAR POWER TRANSISTORS


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    13A0077I D043ST5 DD0007? PG1018 PG1035, PG1019 PG1020 PG1021 PG1022 API Electronics PG1024 DD0007 PG1023 PG1035 PDF

    TRANSISTOR AH-10

    Abstract: pgl203 PG1200 PG1201 PG1202 PG1203 PG1204 PG1205 PG1206 PG1207
    Text: A P I ELECTRONICS INC 13 F T J d G 4 3 S cì2 DOOOOTl □ | '~33r 0 ^ _ INTERIM BULLETIN Su b je ct to R evision W ithout Notice Q 1P JR G POWER TRANSISTOR ENGINEERING BULLETIN -July 15, 1971 -ELECTRontcs inc. TYPE PG1200 thru PG1211, 5 A M P NPN SILICON PLANAR POWER TRANSISTORS


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    PG1200 PG1211, PG1201 PG1202 PG1203 PG1204 PG1205 PG1206 PG1207 TRANSISTOR AH-10 pgl203 PG1203 PG1207 PDF

    transistors t1p50

    Abstract: texas instruments tip47 texas instruments tip50 tip50
    Text: TIP47, TIP48, TIP49, TIP50 NPN SILICON POWER TRANSISTORS D E C E M B E R 1971 - R E V IS E D M A Y 1995 • 40 W at 25°C Case Temperature • 1 A Continuous Collector Current TO-220 PACKAGE TOP VIEW 2 A Peak Collector Current N. o 20 mJ Reverse-Energy Rating


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    TIP47, TIP48, TIP49, TIP50 O-220 TIP47 TIP48 TIP49 transistors t1p50 texas instruments tip47 texas instruments tip50 PDF

    Untitled

    Abstract: No abstract text available
    Text: TIPI 45, TIPI 46, TIP147 PNP SILICON POWER DARLINGTONS C o p y rig h t 1997, Power Innovations Limited, UK • DECEM BER 1971 - REVISED MARCH 1997 Designed for Complementary Use with TIP140, TIP141 and TIP142 • 125 W at 25°C Case Temperature • 10 A Continuous Collector Current


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    TIP147 TIP140, TIP141 TIP142 OT-93 TIP145 TIP146 PDF

    Untitled

    Abstract: No abstract text available
    Text: TIP110, TIP111, TIP112 NPN SILICON POWER DARLINGTONS C o p y rig h t 1997, Power Innovations Limited, UK • DECEM BER 1971 - REVISED MARCH 1997 Designed for Complementary Use with TIP115, TIP116 and TIP117 T 0 -2 2 0 PACKAGE TOP VIEW • 50 W at 25°C Case Temperature


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    TIP110, TIP111, TIP112 TIP115, TIP116 TIP117 TIP110 TIP111 PDF

    Untitled

    Abstract: No abstract text available
    Text: TIP115, TIP116, TIP117 PNP SILICON POWER DARLINGTONS C o p y rig h t 1997, Power Innovations Limited, UK • DECEM BER 1971 - REVISED MARCH 1997 Designed for Complementary Use with TIP110, TIP111 and TIP112 T 0 -2 2 0 PACKAGE TOP VIEW • 50 W at 25°C Case Temperature


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    TIP115, TIP116, TIP117 TIP110, TIP111 TIP112 TIP115 TIP116 PDF

    transistor c 1971

    Abstract: No abstract text available
    Text: TIPI 40, TIPI 41, TIP142 NPN SILICON POWER DARLINGTONS C o p y rig h t 1997, Power Innovations Limited, UK • DECEM BER 1971 - REVISED MARCH 1997 Designed for Complementary Use with TIP145, TIP146 and TIP147 • 125 W at 25°C Case Temperature • 10 A Continuous Collector Current


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    TIP142 TIP145, TIP146 TIP147 OT-93 TIP140 TIP141 transistor c 1971 PDF

    TIP122T

    Abstract: No abstract text available
    Text: TIPI 20, TIPI 21, TIP122 NPN SILICON POWER DARLINGTONS C o p y rig h t 1997, Power Innovations Limited, UK • DECEM BER 1971 - REVISED MARCH 1997 Designed for Complementary Use with TIP125, TIP126 and TIP127 T 0 -2 2 0 PACKAGE TOP VIEW • 65 W at 25°C Case Temperature


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    TIP122 TIP125, TIP126 TIP127 TIP120 TIP121 TIP122T PDF

    Untitled

    Abstract: No abstract text available
    Text: [A F I E L E C T R O N IC S 13 Y - _ ^3 A 0 0 75f IN C DE~| aDM aS^S 0D 0007S 1 p IN T E R IM B U L LE T IN Subject to Revision W ithout Notice -July 15, 1971 POWER TRANSISTOR ENGINEERING BULLETIN P I R G O E itC T R om cs inc. TYPE PG lbO l thru PG1017, 2 A M P NPN


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    0007S PG1017, PG1001 PG1002 PG1003 2N4862 PG1004 PG1005 PG1006 PG1007 PDF

    SN55325

    Abstract: D969 ISN55326 SN5404 SN54154 IN4607 76013d 76017D YC-710
    Text: T E X A S IN S T R - C L I N / I N T F O TI 8961724 TEXAS IN STR ÖFJflTblTSM < LIN /IN TFC 007bDlS 4 f 91D 76012 D SN55325 MEMORY CORE DRIVER D969, MARCH 1971-R EV ISED SEPTEMBER 1986 J PACKAGE TOP VIEW) 600-mA Output Capability Fast Switching Times TJ


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    007bDlE SN55325 1971-REVISED 600-mA 24-Volt -r-53 SN65325s D969 ISN55326 SN5404 SN54154 IN4607 76013d 76017D YC-710 PDF

    et 1103

    Abstract: PG1212 PG1213 PG1214 PG1215 PG1216 PG1217 PG1218 PG1219 PG1220
    Text: A P I E L E C T R O NI C S 0043592 A P I I NC E L E C TRONI CS INC 13AÛÛ9R T-áS13 DE I 00435^2 DDODOTS 7 INTERIM BULLETIN t S u b je ct to Revision Without Notice -J u ly 20, 1971 o W POWER TRANS!*T0R ENGINEERING fU PL^W lis S' TYPE PG1212 thru PG1223> 5 A M P NPN


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    PG1212 PG1223 PG1213 PG1214 PG1215 PG1216 PG1217 PG1218 PG1219 et 1103 PG1220 PDF

    TMS3001

    Abstract: 25CC SN7400 SN7416 SN7473
    Text: TM S 3 0 0 0 LR-DUAL 25 BIT STATIC SHIFT REGISTER T M S 3001 LR-DUAL 32 BIT STATIC SHIFT REGISTER features FE8RUARY 1971 • S ta tic logic • D C to 1 M H z operation • L o w pow er dissipation • Push-pull output buffers • T T L com patible description


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    25-BIT 32-BIT 64-bit TMS3001 25CC SN7400 SN7416 SN7473 PDF

    PG1018

    Abstract: PG1019 PG1020 PG1021 PG1022 PG1030 PG1031 PG1035 PGI023 Pirgo Electronics
    Text: A P I EL ECT RO NIC S INC ' 13 1 DE | 0 0 4 B S CJS 0 D 0 0 0 7 ? S | ~ 3 *°9 7 7J - 7 ? 3 3 - 0 'f T ' - INTERIM BULLETIN S u b je c t to R e visio n W ithout Notice -July 15/ 1971 V POWER TRANSISTOR ENGINEERING BULLETIN n _ _ zo -o — I— oo TYPE PG1018 thru PG1035, 2 A M P NPN


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    PG1018 PG1035, PG1019 PG1020 PG1021 PG1022 PG1024 PG1025 PG1026 PG1030 PG1031 PG1035 PGI023 Pirgo Electronics PDF

    PG1157

    Abstract: PG1158 PG1159 PG1160 PG1161 PG1162 PG1163 PG1164 PG1165
    Text: 0043592 A P I A P I E L E C T R Q N IC S TÑT^ -J 3 A 0 0 8 9 ELECTRONICS INC 13 ~7~-oiJ - / f n BE | D 0 4 3 S “ia DnQQQai 1 IN TERIM B U L L E T IN S u b je ct to Revision W ithout Notice -July 15, 1971 - POWER TRANSISTOR ENGINEERING BULLETIN P r Ii R


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    PG1157 PG1165, PG1158 PG1159 PG1160 PG1161 PG1162 PG1163 PG1164 PG1159 PG1162 PG1165 PDF

    transistor n53

    Abstract: 2N4070 PGI386 PGI380 PGI381 PGI382 PGI383 PGI385
    Text: 004359 2 13 A PI E L E C T RO NI CS 1 3 A 0 1 20 INC d e | a o t a s i a onnaiao 2 Jj j e T ^ 3 “// B U L L E T lW r im Subject to Revision W ithout Notice. ‘ - J u ly 2 0 , 1971 . . POWER TRANSISTOR ENGINEERING RiJU ttlN 10 AMP NPN PLANAR TO ~3 PREMIUM GRADE


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    13A0120 2N4070 PGI380 PGI382 PGI385 PGI381 PGI383 PGI386 10MHz 13A0121 transistor n53 2N4070 PGI380 PGI385 PDF

    2N3303

    Abstract: T1S57 RJh 3347 2N3680 LA 4301 transistor ITT 2907 2N3792 2N3574 BF173 transistor bf 175
    Text: Semiconductor Components Data Book 4 Transistors C o p y rig h t 1971 by T exas In s tru m e n ts L im ited . A ll R ig h ts R eserv ed . P rin te d in th e U n ite d K ingdom . T his b o o k , o r p arts th e re o f, m ay n o t be rep ro d u ce d in any


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    Chiana56 2N3303 T1S57 RJh 3347 2N3680 LA 4301 transistor ITT 2907 2N3792 2N3574 BF173 transistor bf 175 PDF

    PG1212

    Abstract: PG1213 PG1214 PG1215 PG1216 PG1217 PG1218 PG122
    Text: A P I ; 0043592 A P I EL E C T R O N IC S IN C E LECTR ON IC S INC 13AÛ095 T - a 3 13 D F | 0 0 4 3 S cia ODOOCHS 7 INTERIM BULLETIN o t Su b ject to Revision Without Notice -J u ly 20, 1971 t/J -H POWER T R A N S A R ENGINEERING BU’UTW S' Rs TYPE PG1212 thru PG122$ 5 AM P NPN


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    13A0O95 T-33- 0043ST2 PG1212 PG122^ PG1213 PG1214 PG1215 PG1216 PG1217 PG1218 PG122 PDF

    2N2657

    Abstract: 2N2658 HA 1156 R PG1150 PG1151 PG1152 PG1153 PG1154 PG1155 PG1156
    Text: 0043592 A P F E L E CT RON IC S 2ÖA TNC' ÿ f ; A P I ELECTRONICS INC "e g 0 ^ 0 0 4 3 5 ^ 2 D D D Q 1 4 Ì >4 .0149 ., I IN TE R IM B U LLE TIN : - S u b j e c t to R e v is io n - ; 1 - W it h o u t N o tic e - A P R IL 15, 1971 • ' \ • POWER TRANSISTOR '


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    QQ43592 PG1150 PG1156, 2N2657 2N2658 HA 1156 R PG1151 PG1152 PG1153 PG1154 PG1155 PG1156 PDF