2SC4452
Abstract: EN2811
Text: Ordering number:EN2811 NPN Epitaxial Planar Silicon Transistor 2SC4452 High-Speed Switching Applications Features Package Dimensions • Fast switching speed. · Low collector saturation voltage. · High gain-bandwidth product. · Small collector capacity.
|
Original
|
PDF
|
EN2811
2SC4452
2SC4452applied
2059B
2SC4452]
2SC4452
EN2811
|
2SC4452
Abstract: ITR06977 ITR06978 ITR06979
Text: Ordering number:ENN2811 NPN Epitaxial Planar Silicon Transistor 2SC4452 High-Speed Switching Applications Features Package Dimensions • High-speed switching. · Low collector saturation voltage. · High gain-bandwidth product. · Small collector capacity.
|
Original
|
PDF
|
ENN2811
2SC4452
2059B
2SC4452]
2SC4452
ITR06977
ITR06978
ITR06979
|
bc577
Abstract: AGC OPA660 2N5460 simulation model ca3080 agc 2N5460 ca3080 1N4148 2N3904 AB-185 OPA621
Text: APPLICATION BULLETIN Mailing Address: PO Box 11400 • Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd. • Tucson, AZ 85706 Tel: 602 746-1111 • Twx: 910-952-111 • Telex: 066-6491 • FAX (602) 889-1510 • Immediate Product Info: (800) 548-6132
|
Original
|
PDF
|
OPA660
bc577
AGC OPA660
2N5460 simulation model
ca3080 agc
2N5460
ca3080
1N4148
2N3904
AB-185
OPA621
|
bc577
Abstract: BC577 transistor AGC OPA660 TRANSISTOR BC577 OPA660 ca3080 agc 2N5460 simulation model operational amplifier discrete schematic Transistor DG 44 1N4148
Text: APPLICATION BULLETIN Mailing Address: PO Box 11400 • Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd. • Tucson, AZ 85706 Tel: 602 746-1111 • Twx: 910-952-111 • Telex: 066-6491 • FAX (602) 889-1510 • Immediate Product Info: (800) 548-6132
|
Original
|
PDF
|
OPA660
bc577
BC577 transistor
AGC OPA660
TRANSISTOR BC577
OPA660
ca3080 agc
2N5460 simulation model
operational amplifier discrete schematic
Transistor DG 44
1N4148
|
Untitled
Abstract: No abstract text available
Text: Section 28. WDT and SLEEP Mode HIGHLIGHTS 28 This section of the manual contains the following major topics: Introduction . 28-2 Control Register . 28-3
|
Original
|
PDF
|
AN607
PIC18CXXX.
com/10/faqs/codeex/
DS39529A-page
PIC18C
|
AN607
Abstract: PIC18CXXX
Text: Section 28. WDT and SLEEP Mode HIGHLIGHTS This section of the manual contains the following major topics: 28.1 28.2 28.3 28.4 28.5 28.6 28.7 28.8 Introduction . 28-2
|
Original
|
PDF
|
AN607
PIC18CXXX.
com/10/faqs/codeex/
DS39529A-page
PIC18C
AN607
PIC18CXXX
|
Untitled
Abstract: No abstract text available
Text: TPS2811, TPS2812, TPS2813, TPS2814, TPS2815 DUAL HIGHĆSPEED MOSFET DRIVERS SLVS132F − NOVEMBER 1995 − REVISED OCTOBER 2004 D Industry-Standard Driver Replacement D 25-ns Max Rise/Fall Times and 40-ns Max TPS2811, TPS2812, TPS2813 . PACKAGES TOP VIEW
|
Original
|
PDF
|
TPS2811,
TPS2812,
TPS2813,
TPS2814,
TPS2815
SLVS132F
25-ns
40-ns
|
PS2814
Abstract: No abstract text available
Text: TPS2811, TPS2812, TPS2813, TPS2814, TPS2815 DUAL HIGHĆSPEED MOSFET DRIVERS SLVS132F − NOVEMBER 1995 − REVISED OCTOBER 2004 D Industry-Standard Driver Replacement D 25-ns Max Rise/Fall Times and 40-ns Max TPS2811, TPS2812, TPS2813 . PACKAGES TOP VIEW
|
Original
|
PDF
|
TPS2811,
TPS2812,
TPS2813,
TPS2814,
TPS2815
SLVS132F
25-ns
40-ns
PS2814
|
Untitled
Abstract: No abstract text available
Text: G5800 Global Mixed-mode Technology Inc. GSM Power Management System Features General Description Handles all GSM Baseband Power Management 2.8V to 5.5V Input Range Charger Input up to 15V Seven LDOs Optimized for Specific GSM Subsystems
|
Original
|
PDF
|
G5800
48-Pin
G5800
QFN7X7-48
|
Untitled
Abstract: No abstract text available
Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-61 PACKA G E N PN V cE O Ic s u s (m ax ) VOLTS A M PS 2N 1724 80 5 2 0 -9 0 @ 1 5 1@ 2N 1724A 120 5 2N 1725 80 2N 2811 D E V IC E TY PE ^FE@ IC/ V ce ( m in /m a x @ A /V ) ^ C E (sa t) @ If/IB (V @ A /A )
|
OCR Scan
|
PDF
|
|
2SC4452-2
Abstract: 10PA 2SC44 2SC4452 T500
Text: Ordering number: EN 2811 2SC4452 No.2811 NPN Epitaxial Planar Silicon Transistor High-Speed Switching Applications Features • Fast switching speed • Low collector saturation voltage •High gain-bandwidth product ■Small collector capacity • Very small-sized package permitting the 2SC4452-applied sets to be made small and slim
|
OCR Scan
|
PDF
|
2SC44
2SC4452-applied
2SC4452-2
10PA
2SC4452
T500
|
a/TO111
Abstract: No abstract text available
Text: BIPOLAR NPN PLANAR POWER TRANSISTORS TO-111 1 f1 TO-59 VCE sat max VOLTS •c @ ' b 2N2877 50 5.0 20- 60 1.0/2.0 2.0 5.0/0.5 2N2878 50 5.0 40-120 1.0/2.0 2.0 5.0/0.5 2N2879 70 5.0 20- 60 1.0/2.0 2.0 5.0/0.5 ’ 2N3996* 80 5.0 40-120 1.0/2.0 0.25 1.0/0.1
|
OCR Scan
|
PDF
|
O-111
2N2877
2N2878
2N2879
2N3996*
2N3997*
2N2880*
2N3998*
2N3999*
2N2812*
a/TO111
|
HSCH-1001
Abstract: 5082-2815 1N5165 5082-2970 5082-2813 5082-2805 1N5167 5082-2370 5082-2814 HSCH-1001 5082-2800
Text: COMPONENTS SCHOTTKY BARRIER DIODES FOR GENERAL PURPOSE APPLICATIONS SCHOTTKY BARRIER DIODES & HIGH CONDUCTANCE DIODES H E W L E T T ^ PACKARD 5082-2301/02/03/05 5082-2800 1N5711 5082- 2810(1N5712) 5O 82-2811(1N5713)0 5082-2835 5082-2900 HSCH-1001(1N6263)
|
OCR Scan
|
PDF
|
1N5711)
1N5712)
1N5713)
HSCH-1001
1N6263)
HSCH-1001.
DO-35)
5082-2815
1N5165
5082-2970
5082-2813
5082-2805
1N5167
5082-2370
5082-2814
HSCH-1001 5082-2800
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line M icrowave Pulse Power Transistor . . . designed for 10 2 5 -1 1 5 0 MHz pulse com mon base am plifier applications such as TCAS, TACAN and M o de-S transmitters. • Guaranteed Performance @ 1090 MHz Output Power = 150 W alts Peak
|
OCR Scan
|
PDF
|
MRF10500
MRF10150
|
|
|
SOT223 Package
Abstract: MARKING npn TRANSISTOR 1k sot223 MOTOROLA TRANSISTOR P1D
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor Surface Mount PZTA42T1 Motorola Preferred Device NPN Silicon COLLECTOR 2,4 SOT-223 PACKAGE NPN SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT EMITTER 3 MAXIMUM RATINGS Rating Symbol Value U nit Collector-Emitter Voltage Open Base
|
OCR Scan
|
PDF
|
PZTA42T1
OT-223
318E-04,
O-261AA
PZTA64T1
SOT223 Package
MARKING npn TRANSISTOR 1k sot223
MOTOROLA TRANSISTOR P1D
|
5082-2815
Abstract: 5082-2970 HSCH-1001 diode hp 2835 schottky 5082-2370 5082-2997 diode hp 2811 HSCH-1001 5082-2800 5082-2813 5082-2805
Text: ^5ñ d ÉT| 4 4 4 7 £ ú 4 DDGaf l 31 3 4 4 4 7 5 8 ^ H E WL E T T - P A C K A R D » m 5 8C CMPNTS HEWLETT PACKARD 02831 SCHOTTKY BARRIER DIODES FOR GENERAL PURPOSE APPLICATIONS d T-07 -*7 1N5711* 1N5712* 5082-2301 5082-2302 5082-2303 5082-2305 5082-2800/10/11/35*
|
OCR Scan
|
PDF
|
1N5711*
1N5712*
HSCH-1001
1N6263I*
1N5711,
1N5712,
1N5711
1N5711)
5082-2815
5082-2970
HSCH-1001
diode hp 2835 schottky
5082-2370
5082-2997
diode hp 2811
HSCH-1001 5082-2800
5082-2813
5082-2805
|
2SC2802
Abstract: 2808 transistor n2818
Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English
|
OCR Scan
|
PDF
|
Te-25
2SC2802
2808 transistor
n2818
|
5082-2815
Abstract: 5082-2970 5082-2805 5082-2813 5082-2308 5082-2804 diode+hp+2835+schottky 5082-2826 5082-2997 5082-2912
Text: HEWLETT-PACKARD i CMPNTS HEWLETT PACKARD 20E D E3 4 447584 OOOSfc.37 0 SCHOTTKY BARRIER DIODES FOR GENERAL PURPOSE APPLICATIONS Features 1N5711 1N5712 5082-2800/10/11/35 5082-2301 5082-2302 5082-2303 5082-2900 0,41 .016 0.36 (>014) LOW TURN-ON VOLTAGE: AS LOW AS
|
OCR Scan
|
PDF
|
0005fc
1N5711
1N5712
1N5711,
1N5712,
i712-
1n57h
1n5712
5082-2815
5082-2970
5082-2805
5082-2813
5082-2308
5082-2804
diode+hp+2835+schottky
5082-2826
5082-2997
5082-2912
|
2SC4452
Abstract: QVC5 Q60H
Text: SANYO SEMICONDUCTOR CORP S2E D 7=^707!= G Q 0 7 1 D 1 Q T-3S -0 ? 2SC4452 • N P N Epitaxial Planar Silicon Transistor 20S9 High-Speed Switching Applications 2811 F e a tu re s • F ast switching speed • Low collector saturation voltage • High gain-bandwidth product
|
OCR Scan
|
PDF
|
G007101
2SC4452
-T-35-07
2SC4452-applied
QVC5
Q60H
|
5082-2815
Abstract: No abstract text available
Text: HEWLETT-PACKARD. CUPNTS HEWLETT PACKARD 20E D B 44475fi4 OOQSt.37 SCHOTTKY BARRIER DIODES FOR GENERAL PURPOSE APPLICATIONS Features 0.41 D a 1N5711 1N5712 5082-2800/10/11/35 5082-2301 5082-2302 5082-2303 5082-2900 .016 0.36 (>014) LOW TURN-ON VOLTAGE: AS LOW AS
|
OCR Scan
|
PDF
|
44475fi4
1N5711
1N5712
1N5711,
1N5712,
Figure12.
5082-2815
|
trw62601
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line M icrow ave Power O scillator TVansistor . . . designed for use as power oscillators at frequencies to 3.0 GHz with typical output power of over 1.0 watt. • Operation to 3.0 GHz • High Output Power 1.2 W Typ @ 2.5 GHz
|
OCR Scan
|
PDF
|
TRW62601
28A-03,
GP-13)
TP62601
trw62601
|
ULN2803N
Abstract: ULN2800 ULN2804N ULN2803D ULN2010 uln2004 application note ULN2020 ULN2000 ULN2801N ULN2803-D
Text: IN TEG RATED POWER &2 D Ë MflaSÛTÛ □□□□SSS 1 | ~ jK K V : 4825898 INTEGRATED POWER 'M Y E 82D 002 52 D Darlington Transistor Arrays D , . SEMICONDUCTORS LTD Features Description ' 7 or 8 darlington power drives In single package 50V or 95V breakdown voltage
|
OCR Scan
|
PDF
|
|
MRF650
Abstract: No abstract text available
Text: MOTOROLA wm S E M IC O N D U C T O R TECHNICAL DATA M R F6 50 The RF Line 2 N P N S il i c o n R F P o w e r T r a n s is t o r 50 WATTS, 512 MHz RF POWER TRANSISTOR NPN SILICON . . designed fo r 12.5 V o lt UHF large-signal a m p lifie r a pp licatio n s in ind u stria l and
|
OCR Scan
|
PDF
|
MRF650
MRF650
|
philips 433-2 npn
Abstract: handbook philips ic26 Philips Components, Soft Ferrites Data Handbook M philips hybrid amplifier OM modules display dc05 Philips IC20 4 linear handbook philips semiconductor data handbook 4000 series CMOS Logic ICs Magnetic Products, Soft Ferrites, Data Handbook M
Text: Philips Semiconductors Data handbook system Appendix A DATA HANDBOOK SYSTEM Discrete Semiconductors Philips Semiconductors data handbooks contain all pertinent data available at the time of publication and each is revised and reissued regularly. Book Title
|
OCR Scan
|
PDF
|
|
