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    C 3198 TRANSISTOR Search Results

    C 3198 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation

    C 3198 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    A1266

    Abstract: transistor a1266 A1266 Y A1266 GR a1266 transistor 2SC3198 TRANSISTOR 2SC 3198 TRANSISTOR C 3198 c 3198 transistor transistor 2SC3198
    Text: 2SC 3198 2SC 3198 SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE PCT PROCESS 1 Unit in mm ( A P P LICATIONS ) • L o w F r e q u e n c y Am plifiers ■ L o w N o is e Am plifiers ( FE A TU R E S ^ • E xc e ll e nt h FE Li n e ar it y, h FE (0.1mA) / h FE (2mA) = 0 . 9 5 (Typ.)


    OCR Scan     		2SC3198 2SC3198Â 2SA1266/2S A1266Â 150mA 100mA, IB-100mA f-30MHz A1266 transistor a1266 A1266 Y A1266 GR a1266 transistor TRANSISTOR 2SC 3198 TRANSISTOR C 3198 c 3198 transistor transistor 2SC3198 PDF

    NPN Bipolar Transistor

    Abstract: KTC3198-O TO-92 NPN Bipolar Transistor Bl 370 MARKING A1G
    Text: KTC3198-O/Y/GR/BL Taiwan Semiconductor Small Signal Product TO-92 NPN Bipolar Transistor FEATURES - The transistor is subdivided into four groups according to its DC current gain: O, Y, GR, BL - Pb free and RoHS compliant MECHANICAL DATA - Case: TO-92 small outline plastic package


    Original     		KTC3198-O/Y/GR/BL C/10s 195mg S1405004 NPN Bipolar Transistor KTC3198-O TO-92 NPN Bipolar Transistor Bl 370 MARKING A1G PDF

    IC 4822

    Abstract: transistor c1093 AC digital voltmeter using 7107 TRANSISTOR REPLACEMENT GUIDE c9014 R1019 FM ic c1093 AD905wt cf745 04 p AD905WA china DVD player lens circuit diagram
    Text: DVD Receiver LX3700D/21S/21R/22S/25S LX3750W/22S/25S/37 Service Service Service LX3750W LX3700D Service Manual TABLE OF CONTENTS COMPACT Page Location of PC Boards . 1-2 Versions Variation & Package . 1-2


    Original     		LX3700D/21S/21R/22S/25S LX3750W/22S/25S/37 LX3750W LX3700D BAS316 BZX79-B5V1 BZX79-B15 IC 4822 transistor c1093 AC digital voltmeter using 7107 TRANSISTOR REPLACEMENT GUIDE c9014 R1019 FM ic c1093 AD905wt cf745 04 p AD905WA china DVD player lens circuit diagram PDF

    Untitled

    Abstract: No abstract text available
    Text: PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 1 - MARCH 94 FEATURES * 150 Volt VCE0 * 1 Amp continuous current * Ptot= 1 Watt ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL ZTX554 ZTX555 UNIT Collector-Base Voltage V CBO -140 -160 V C ollector-Em itter Voltage


    OCR Scan     		ZTX554 ZTX555 -120V -140V -100mA, -10mA* ZTX555 PDF

    FZT600

    Abstract: No abstract text available
    Text: SOT223 NPN SILICON PLANAR MEDIUM POWER DARLINGTON FZT600 TRANSISTOR 1 Issu E 2- FEBRUARY 1995 FEATURES ! I ‘ * 2A continuous * Guaranteed 140 VOLT current c VCE[l hFE Specified up to 1A E PART MARKING DETAIL FZT600 - * ,BSOLUTE MAXIMUM PARAMETFR .—.-.


    Original     		OT223 FZT600 10OmA, 20MHz Col16ctor FZT600 PDF

    91010-01TX

    Abstract: MHQ6002HX MD6002 MHQ6002
    Text: 4bE J> • b3b7254 GQISfiTB 4 ■ MOTb“F ’^ v £ ? MOTOROLA SC XSTRS/R F MOTOROLA SEMICONDUCTOR! TECHNICAL DATA DM0 MD6002HX, HXV (DUAL) MD6002FHXV (DUAL) *MHQ6002HX, HXV (QUAD) MQ6002HXV (QUAD) Dual/Quad NPN/PNP Complementary Pairs Small-Signal Transistors


    OCR Scan     		b3b7254 MD6002HX, MD6002FHXV MHQ6002HX, MQ6002HXV 91010-01TX MHQ6002HX MD6002 MHQ6002 PDF

    Untitled

    Abstract: No abstract text available
    Text: PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 1 - MARCH 94 FEATURES * 150 Volt V,CEO 1 Amp continuous current P,o,= 1 Watt E-Line TQ92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage VCBO C ollector-Em itter Voltage ZTX555


    OCR Scan     		ZTX554 ZTX555 001G35S PDF

    ZTX555

    Abstract: ZTX554 DSA003769
    Text: ZTX554 ZTX555 ISSUE 1 – MARCH 94 FEATURES * 150 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt TYPICAL CHARACTERISTICS IB1=IB2=IC/10 ZTX554/55-2 -0.8 tr ts ns µs 500 5 Switching time VCE sat - (Volts) IC/IB=10 -0.6 -0.4 -0.2 -0.0001 -0.001 -0.01 -0.1


    Original     		ZTX554 ZTX555 IC/10 ZTX554/55-2 ZTX555 ZTX554 DSA003769 PDF

    Untitled

    Abstract: No abstract text available
    Text: ZTX554 Not Recommended for New Design Please Use ZTX555 ZTX554 ZTX555 ISSUE 1 – MARCH 94 FEATURES * 150 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt TYPICAL CHARACTERISTICS IB1=IB2=IC/10 ZTX554/55-2 -0.8 tr ts ns µs 500 5 Switching time VCE sat - (Volts)


    Original     		ZTX554 ZTX555 ZTX555 100ms ZTX554 PDF

    Z60N

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER TRANSISTOR bSMTflST QÜ17703 ÔTT 2SC4240 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION 2SC 4240 is a silicon NPN epitaxial planar type transistor specifi­ cally designed for VHF power amplifier applications. OUTLINE DRAWING Dim ensions in mm


    OCR Scan     		2SC4240 peg13dB. 220pF, 1000pF, 4700p Z60N PDF

    Transistor C 3199

    Abstract: LADC-100 BD790 BD792 bd791 bd789
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BD789 Com plem entary Plastic Silicon Power Transistors BD791 * PNP . . . designed for low power audio amplifier and low-current, high speed switching applications. • • • • BD790 BD792* High Collector-Emitter Sustaining Voltage —


    OCR Scan     		BD789, BD790 BD791, BD792 BD789 BD791 BD790 BD792* BD791 Transistor C 3199 LADC-100 PDF

    UCN5830B

    Abstract: UCN5831B GP-004-1 UCN58 WP001A
    Text: ALLEGRO MICROSYSTEMS IN C 33 E D 05G433Ö Ü00527S b • ALGR BiMOS II4-B IT LATCHED DRIVER The UCN5830B latched driver is a high-current integrated circuit comprised of CMOS data latches, a bipolar Darlington transistor driver for each latch, and CMOS control circuitry for the common STROBE


    OCR Scan     		0SG433fi PP-025-1 UCN5830B UCN5831B GP-004-1 UCN58 WP001A PDF

    Untitled

    Abstract: No abstract text available
    Text: 5830 BiMOS II 4-BIT LATCHED DRIVER The UCN5830B latched driver is a high-current integrated circuit com prised of CM OS data latches, a bipolar Darlington transistor driver for each latch, and CM OS control circuitry for the com m on STROBE and O UTPUT ENABLE functions. Although primarily designed for use


    OCR Scan     		UCN5830B PDF

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE 86D 01398 ObE D • bbS3T31 D013b3b 0 ” d _JL BLV98 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor in SOT-171 envelope intended fo r use in class-B operated base station transmitters in the 900 MHz communications band.


    OCR Scan     		bbS3T31 D013b3b BLV98 OT-171 ECHANICA53T31 0013b42 BLV98 PDF

    c 3198 transistor

    Abstract: 2N6383 IC 6648 2N6648 2n6385 sc 3198 transistor
    Text: MOTOROLA SC XSTR S/ R F 12E D I b3b?5S4 □ 004 3MG 1 r -5 3 '^ 9 r -3 3 '3 / MOTOROLA SEMICONDUCTOR TECHNICAL DATA 15 A M P E R E P E A K COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . . . m o n o lith ic com plem en tary silicon Darlington transistors designed


    OCR Scan     		----2N6384 2N6385 c 3198 transistor 2N6383 IC 6648 2N6648 sc 3198 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: MPSA92 / MMBTA92 / PZTA92 MPSA92 MMBTA92 PZTA92 C C E C B TO-92 SOT-23 E B SOT-223 Mark: 2D B E C PNP High Voltage Amplifier This device is designed for high voltage driver applications. Sourced from Process 76. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		MPSA92 MMBTA92 PZTA92 MPSA92 MMBTA92 OT-23 OT-223 OT-223 PDF

    2n4260

    Abstract: 2N4261 2N4260 MOTOROLA motorola 2N4261
    Text: MOTORCLA SC XSTRS/R F 1 SE 0 I b 3 b ? a S «4 □OfibMO"! ^ | MAXIMUM RATINGS Symbol Value Unit Collector-Emitter Voltage VCEO 15 Vdc Collector-Base Voltage VCBO 15 Vdc Emitter-Base Voltage VEBO 4.5 Vdc Collector Current — Continuous ic 30 mAdc Total Device Dissipation @ Ta = 25°C


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROL A SC ÍXSTRS/R F> 6367254 MOTOROLA SC XSTR S/R F 96D 80464 - NPN MOTOROLA - 3 3 - / 3 7^ 3 «3 - 2N6315, 2N6316 SEMICONDUCTOR PNP TECHNICAL DATA 2N6317, 2N6318 COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS


    OCR Scan     		2N6315, 2N6316 2N6317, 2N6318 PDF

    40788

    Abstract: No abstract text available
    Text: HARRIS SEMICOND SECTOR 44E D 13 4302571 0037517 7 Ö H A S T - 4 3 '2 - 1 CD 4078B Types 3 HARRIS Features: CMOS 8-lnput NOR/OR Gate High-Voltage Types 20-Volt Rating) • C D 40788 NO R/O R Gate provides the system designer w ith direct im plem enta­ tio n o f the positive-logic 8-input NOR and


    OCR Scan     		4078B CD4078BH. 40788 PDF

    IRF822

    Abstract: IRF820 IRF823 IRF821 Diode IRF820
    Text: Standard Power M O SFETs- IRF820, IRF821, IRF822, IRF823 F ile N u m b e r 1581 Power MOS Fîeld-Effect Transistors N -CHANNEL ENHANCEM ENT MODE N-Channel Enhancement-Mode Power Field-Effect Transistors 2.0A and 2.5A, 450V-500V


    OCR Scan     		IRF820, IRF821, IRF822, IRF823 50V-500V IRF822 IRF823 IRF820 IRF821 Diode IRF820 PDF

    an-9744

    Abstract: Transistor 3-347 AN9726 AN9718 Transistor 3-354
    Text: H A Semiconductor RM S S Signal Processing Communications 3 C o m m u n ic a tio n s P ro d u cts PAGE HI1177 8-Bit, 40MSPS, 2-Channel D/A Converter. 3-5 HI5628 8-Bit, 165/125/60MSPS, Dual High Speed CMOS D/A Converter.


    OCR Scan     		HI1177 HI5628 HI5640 HI5660 HI5662 HI5667 HI5721 HI5728 HI5731 HI5741 an-9744 Transistor 3-347 AN9726 AN9718 Transistor 3-354 PDF

    wl smd transistor

    Abstract: alternator circuit diagram transistor SMD WL sc 3198 transistor CAR ALTERNATOR REGULATOR 13,8 transistor ignition circuit transistor 3199 CAR ALTERNATOR REGULATOR transistor marking R10 smd MTB20
    Text: CS3361 Alternator Voltage Regulator FET Driver The CS3361 integral alternator regulator integrated circuit provides the voltage regulation for automotive, 3–phase alternators. It drives an external logic level N channel enhancement power FET for control of the alternator field current. In the event of a charge fault,


    Original     		CS3361 CS3361 MR2502 MPSA13 MTB20N20E wl smd transistor alternator circuit diagram transistor SMD WL sc 3198 transistor CAR ALTERNATOR REGULATOR 13,8 transistor ignition circuit transistor 3199 CAR ALTERNATOR REGULATOR transistor marking R10 smd MTB20 PDF

    VON100

    Abstract: VOP100
    Text: HFA1115/883 S E M I C O N D U C T O R High Speed, Low Power, Output Limiting Closed Loop Buffer Amplifier July 1994 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1.


    Original     		HFA1115/883 MIL-STD883 HFA1115/883 225MHz, VON100 VOP100 PDF

    Untitled

    Abstract: No abstract text available
    Text: HA-2640/883 S E M I C O N D U C T O R High Voltage Operational Amplifier July 1994 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. HA-2640/883 monolithic operational amplifier is designed to


    Original     		HA-2640/883 MIL-STD883 HA-2640/883 HV200 PDF