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    C 4055 TRANSISTOR Search Results

    C 4055 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    C 4055 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    C 4055 transistor

    Abstract: 2N2221AX
    Text: 2N2221AX MECHANICAL DATA Dimensions in mm inches 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) HIGH SPEED SWITCHING BIPOLAR NPN TRANSISTOR IN A HERMETICALLY SEALED TO-18 PACKAGE 12.7 (0.500) min. 5.33 (0.210) 4.32 (0.170) FEATURES 0.48 (0.019) 0.41 (0.016)


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    2N2221AX O-206AA) C 4055 transistor 2N2221AX PDF

    marking 2U 95 diode

    Abstract: automatic room power control circuit block diagra Pin Diagram of ic 4086 datasheet LTC1733 LTC4055 LTC4055EUF LTC4411 MO-220
    Text: LTC4055 USB Power Controller and Li-Ion Linear Charger U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Charges Single Cell Li-Ion Batteries Directly from USB Port Load Dependent Charging Guarantees USB Input Current Compliance Automatic Battery Switchover When Input Supply


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    LTC4055 500mA/100mA) 4055f marking 2U 95 diode automatic room power control circuit block diagra Pin Diagram of ic 4086 datasheet LTC1733 LTC4055 LTC4055EUF LTC4411 MO-220 PDF

    48v regulated battery charger

    Abstract: LTC1733 LTC1734 LTC4055 LTC4055EUF MO-220 automatic room power control circuit block diagra ntc 100K
    Text: Electrical Specifications Subject to Change LTC4055 USB Power Controller and Li-Ion Linear Charger U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Charges Single Cell Li-Ion Batteries Directly from USB Port Load Dependent Charging Guarantees USB Input


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    LTC4055 500mA/100mA) LTC3411 LTC3440 600mA 4055p 48v regulated battery charger LTC1733 LTC1734 LTC4055 LTC4055EUF MO-220 automatic room power control circuit block diagra ntc 100K PDF

    Untitled

    Abstract: No abstract text available
    Text: Characterization of atomic layer deposition HfO2, Al2O3, and plasmaenhanced chemical vapor deposition Si3N4 as metal–insulator–metal capacitor dielectric for GaAs HBT technology Jiro Yota,a Hong Shen, and Ravi Ramanathan Skyworks Solutions, Inc., 2427 W. Hillcrest Drive, Newbury Park, California 91320


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    Untitled

    Abstract: No abstract text available
    Text: HIGH SPEED SWITCHING TRANSISTORS FX series FTO-220 ITO-220 TO-220 ITO-3P MTO-3L MTO-3P Bipolar transistors NPN Absolute Maximum Ratings Electrical Characteristics VRM VCEO VEBO IC IB PT Tstg TJ VCEO (sus) (min) [V] [V] [V] [A] [A] [W] [˚C] [˚C] [V] 3 1


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    FTO-220 ITO-220 O-220 2SC4051 ITO-220 2SC4663 PDF

    CIMRF7Z4011

    Abstract: No abstract text available
    Text: Y203-EN2-01.book Seite 253 Montag, 29. März 2004 12:52 12 CIMR-F7Z Varispeed F7 Frequency inverter for full flux vector control Current Vector Control with or without PG Torque Control PID Control Standard LCD operator Fieldbus options: DeviceNet, Profibus, CANOpen


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    Y203-EN2-01 RS485 110KW I23E-EN-01 CIMRF7Z4011 PDF

    CIMR-F7Z40151

    Abstract: No abstract text available
    Text: Y203-EN2-02-Katalog.book Seite 269 Mittwoch, 24. Mai 2006 2:22 14 CIMR-F7Z Varispeed F7 The industrial workhorse • • • • • • • • • • • Flux vector control with or without PG Silent operation. No current de-rating in silent mode. Torque control


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    Y203-EN2-02-Katalog RS485 I23E-EN-02 CIMR-F7Z40151 PDF

    CIMR-G7C4090

    Abstract: CIMR-G7C4055
    Text: Y203-EN2-02-Katalog.book Seite 249 Mittwoch, 24. Mai 2006 2:22 14 CIMR-G7C Varispeed G7 World first three level inverter architecture • • • • • • • • • • • • • • 3 level control 400 V class Current vector control and V/F with or without PG


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    Y203-EN2-02-Katalog RS-485 I37E-EN-01A CIMR-G7C4090 CIMR-G7C4055 PDF

    c 945 TRANSISTOR equivalent

    Abstract: No abstract text available
    Text: MC100EP16VC 3.3V / 5V ECL Differential Receiver/Driver with High Gain and Enable Output The EP16VC is a differential receiver/driver. The device is functionally equivalent to the EP16 and LVEP16 devices but with high gain and enable output. The EP16VC provides an EN input which is synchronized with the


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    MC100EP16VC EP16VC LVEP16 remains00 MC100EP16VC AND8020 c 945 TRANSISTOR equivalent PDF

    EN3475

    Abstract: KEP66 MC100 MC100EP16VC MC100EP16VCD MC100EP16VCDR2 transistor 3005 33
    Text: MC100EP16VC 3.3V / 5VĄECL Differential Receiver/Driver with High Gain and Enable Output The EP16VC is a world–class differential receiver/driver. The device is functionally equivalent to the EP16 and LVEP16 devices but with high gain and enable output.


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    MC100EP16VC EP16VC LVEP16 r14525 MC100EP16VC/D EN3475 KEP66 MC100 MC100EP16VC MC100EP16VCD MC100EP16VCDR2 transistor 3005 33 PDF

    IRF620

    Abstract: No abstract text available
    Text: HE D I 4055*452 GOGflMflQ Ü | 3 7 -"tf Data Sheet No. PD-9.317G INTERNATIONAL R E C T I F I E R INTERNATIONAL RECTIFIER HEXFET’ TRANSISTORS IOR IRF620 IRF621 'd IRF6SS N-Channel Ls 200 Volt, 0.8 Ohm HEXFET TO-220AB Plastic Package The HEXFET technology is the key to International Rec­


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    IRF620 IRF621 O-220AB C-233 IRF620, IRF621, IRF622, IRF623 T-39-11 C-234 IRF620 PDF

    Untitled

    Abstract: No abstract text available
    Text: 11E D | INTERNATIONAL R E C T I F I E R 4055 45 2 0 0 00 3 0 0 4 | Data Sheet No. PD-9.525A T -35-25 IN T E R N A T IO N A L R E C T IF IE R IOR AVALANCHE AND dv/dt RATED HEXFET IRFR220 TRANSISTORS IRFR222 IRFU220 N -C H A N N E L IRFU222 Product Summary 200 Volt, 0.80 Ohm HEXFET


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    IRFR220 IRFR222 IRFU220 IRFU222 IRFR220, IRFR222, IRFU220, IRFU222 IRFR220TR 554S2 PDF

    2sc4061

    Abstract: No abstract text available
    Text: High Speed Switching Transistors F X series ITO-220 Bipolar transistors NPN Type No. EIAJ T0-220 Absolute Maximum Ratings Electrical Characteristics V c eo VCE (min) (sat) (max) [V ] jc fT ton V be (sat) (max) (max) (typ) (max) [V ] [•c /w ] [M H z]


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    ITO-220 T0-220 FTO-220 ITO-220 Fig82-3 2SC4061 2SC4663 PDF

    Untitled

    Abstract: No abstract text available
    Text: High Speed Switching Transistors . ITO-220 TO-220 IT0-3P MT0-3P Bipolar transistors NPN Absolute Maximum Ratings Type No. Electrical Characteristics VcBO VcEO V ebo Ic Ib Pr Tstg Tj V CEO (sus) (min) [V ] [V ] [V ] [A] [A ] [W ] re i rc ] [V ] h FE (min)


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    ITO-220 O-220 O-220 FTO-220 ITO-220 2SC4663 PDF

    ts 4052

    Abstract: 2sc 5241
    Text: High Speed Switching Transistors FX series B ipolar transistors NPN ITO-220 TO -220 A bsolute M axim um Ratings VcEO V ebo Ic [V] [V] [A] 2SC4051 4052 Type No. E lectrical C haracteristics VcE V cE O IlFE (min) V be d jc (sat) (sat) (m ax) (m ax) (max) ton


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    ITO-220 2SC4051 ITO-220 FTO-220 ts 4052 2sc 5241 PDF

    ITO-220

    Abstract: "Bipolar Transistors"
    Text: Ir'M ITO-220 Bipolar transistors NPN T O -220 Absolute Maximum Ratings Electrical Characteristics VCEO (sus) (min) [V ] hFE VcE (sat) (max) V be 6\o fT (sat) (max) (max) (typ) [°C /W ] [M H z ] [V ] ton ts tf (max) (max) M M (max) U s] Outline Type No.


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    ITO-220 O-220 O-220 ITO-220 FTO-220 "Bipolar Transistors" PDF

    tf s 544 a

    Abstract: No abstract text available
    Text: High Speed Sw itching Transistors F3 series Bipolartransistors NPN Parts No. EIAJ No. VCBO VCEO V ebo lc Ib Pt [V] [V] [V] [A] [A] [W] 3 1 45 500 400 7 6 2 50 10 4 100 VCEO 3164 hFE (sus) (m in) 2SC3162 3163 Electrical Characteristics Absolute Maximum Ratings


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    2SC3162 O-220 2SC4051 ITO-220 ITO-220 2SC4663 tf s 544 a PDF

    ic 4580

    Abstract: SL 100 NPN Transistor hfe 4053 4833 4834 ITO-220 2SC3162 2SC4051 2SC4663
    Text: H ig h S p e e d S w it c h in g T r a n s is t o r s F3 s er ie s Bipolar transistors NPN Electrica Characteristics Absolute Maximum Ratings Part No. VCEO EIAJ No. VCBO VCEO V ebo Ic IB Pt [V] [V] [V] [A] [A] [W] 3 1 45 500 400 7 6 2 50 10 4 100 (sus) (min)


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    2SC3162 O-220 2SC4663 ITO-220 ic 4580 SL 100 NPN Transistor hfe 4053 4833 4834 2SC3162 2SC4051 PDF

    2SC3219

    Abstract: x3165 2SC321 TP8V45FX T10M20F3 T10W20F3 T10W40F3 T20M20F3 T3M40F3 T3V40F3
    Text: POWER TRANSISTORS SHINDENGEN ELECTRIC HF G 3SE J> m 023.^307 GDGOaifl G ISHE J age * Ultra High Speed Switching Transisto F3 series 0 1 pel EIAJ No. » tt Ä * S fc Absolute Maximum Ratings £ Type No. Vcbo VCEO VEBO 3220 • lo IB PT Tstg IJ [•c ] DcJ V oeo


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    2SC3219 T6V20F3 T10W20F3 T6M20F3 T10M20F3 TP3V45FX y4053 T5V45FX TP5V45FX T8V45FX x3165 2SC321 TP8V45FX T10M20F3 T10W20F3 T10W40F3 T20M20F3 T3M40F3 T3V40F3 PDF

    Untitled

    Abstract: No abstract text available
    Text: Jp|j-0fpi QtjOfi QI Provisional Data Sheet No. PD-9.424B IGR Rectifier JANTX2N6784 HEXFET POWER MOSFET JANTXV2N6784 [REF:MIL-PRF-19500/556] [GENERIC:IRFF210] N -C H A N N E L 200 Volt, 1.50 HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transis­


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    JANTX2N6784 JANTXV2N6784 MIL-PRF-19500/556] IRFF210] PDF

    TRANSISTOR 2FE

    Abstract: No abstract text available
    Text: International I R Rectifier pd-9.h6id IRG4PC30U PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter


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    IRG4PC30U O-247AC TRANSISTOR 2FE PDF

    Untitled

    Abstract: No abstract text available
    Text: Provisional Data Sheet No. PD-9.1551 IQR Rectifier HEXFET POWER MOSFET IRFN350 N - CHA N N E L Product Summary 400 Volt, 0.315fi HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The effi­ cient geometry achieves very low on-state resistancecom­


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    IRFN350 315fi PDF

    Untitled

    Abstract: No abstract text available
    Text: In te r n a tio n a l 549 provisional Data Sheet No. PD-9.1 IGR R ectifier HEXFET POWER MOSFET IRFN250 N -C H A N N E L Product Summary 200 Volt, 0.100ft HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The effi­


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    IRFN250 100ft SS452 PDF

    transistor C946

    Abstract: No abstract text available
    Text: PD - 9.1114 International [^Rectifier IRGPC40KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast CoPack IGBT Features • • • • V ces = 600V Short circuit rated -10ns @125°C, VGE= 15V Switching-loss rating includes all "tail" losses


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    IRGPC40KD2 -10ns C-951 O-247AC C-952 transistor C946 PDF