C 4055 transistor
Abstract: 2N2221AX
Text: 2N2221AX MECHANICAL DATA Dimensions in mm inches 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) HIGH SPEED SWITCHING BIPOLAR NPN TRANSISTOR IN A HERMETICALLY SEALED TO-18 PACKAGE 12.7 (0.500) min. 5.33 (0.210) 4.32 (0.170) FEATURES 0.48 (0.019) 0.41 (0.016)
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2N2221AX
O-206AA)
C 4055 transistor
2N2221AX
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marking 2U 95 diode
Abstract: automatic room power control circuit block diagra Pin Diagram of ic 4086 datasheet LTC1733 LTC4055 LTC4055EUF LTC4411 MO-220
Text: LTC4055 USB Power Controller and Li-Ion Linear Charger U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Charges Single Cell Li-Ion Batteries Directly from USB Port Load Dependent Charging Guarantees USB Input Current Compliance Automatic Battery Switchover When Input Supply
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LTC4055
500mA/100mA)
4055f
marking 2U 95 diode
automatic room power control circuit block diagra
Pin Diagram of ic 4086 datasheet
LTC1733
LTC4055
LTC4055EUF
LTC4411
MO-220
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48v regulated battery charger
Abstract: LTC1733 LTC1734 LTC4055 LTC4055EUF MO-220 automatic room power control circuit block diagra ntc 100K
Text: Electrical Specifications Subject to Change LTC4055 USB Power Controller and Li-Ion Linear Charger U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Charges Single Cell Li-Ion Batteries Directly from USB Port Load Dependent Charging Guarantees USB Input
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LTC4055
500mA/100mA)
LTC3411
LTC3440
600mA
4055p
48v regulated battery charger
LTC1733
LTC1734
LTC4055
LTC4055EUF
MO-220
automatic room power control circuit block diagra
ntc 100K
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Untitled
Abstract: No abstract text available
Text: Characterization of atomic layer deposition HfO2, Al2O3, and plasmaenhanced chemical vapor deposition Si3N4 as metal–insulator–metal capacitor dielectric for GaAs HBT technology Jiro Yota,a Hong Shen, and Ravi Ramanathan Skyworks Solutions, Inc., 2427 W. Hillcrest Drive, Newbury Park, California 91320
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Untitled
Abstract: No abstract text available
Text: HIGH SPEED SWITCHING TRANSISTORS FX series FTO-220 ITO-220 TO-220 ITO-3P MTO-3L MTO-3P Bipolar transistors NPN Absolute Maximum Ratings Electrical Characteristics VRM VCEO VEBO IC IB PT Tstg TJ VCEO (sus) (min) [V] [V] [V] [A] [A] [W] [˚C] [˚C] [V] 3 1
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FTO-220
ITO-220
O-220
2SC4051
ITO-220
2SC4663
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CIMRF7Z4011
Abstract: No abstract text available
Text: Y203-EN2-01.book Seite 253 Montag, 29. März 2004 12:52 12 CIMR-F7Z Varispeed F7 Frequency inverter for full flux vector control Current Vector Control with or without PG Torque Control PID Control Standard LCD operator Fieldbus options: DeviceNet, Profibus, CANOpen
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Y203-EN2-01
RS485
110KW
I23E-EN-01
CIMRF7Z4011
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CIMR-F7Z40151
Abstract: No abstract text available
Text: Y203-EN2-02-Katalog.book Seite 269 Mittwoch, 24. Mai 2006 2:22 14 CIMR-F7Z Varispeed F7 The industrial workhorse • • • • • • • • • • • Flux vector control with or without PG Silent operation. No current de-rating in silent mode. Torque control
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Y203-EN2-02-Katalog
RS485
I23E-EN-02
CIMR-F7Z40151
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CIMR-G7C4090
Abstract: CIMR-G7C4055
Text: Y203-EN2-02-Katalog.book Seite 249 Mittwoch, 24. Mai 2006 2:22 14 CIMR-G7C Varispeed G7 World first three level inverter architecture • • • • • • • • • • • • • • 3 level control 400 V class Current vector control and V/F with or without PG
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Y203-EN2-02-Katalog
RS-485
I37E-EN-01A
CIMR-G7C4090
CIMR-G7C4055
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c 945 TRANSISTOR equivalent
Abstract: No abstract text available
Text: MC100EP16VC 3.3V / 5V ECL Differential Receiver/Driver with High Gain and Enable Output The EP16VC is a differential receiver/driver. The device is functionally equivalent to the EP16 and LVEP16 devices but with high gain and enable output. The EP16VC provides an EN input which is synchronized with the
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MC100EP16VC
EP16VC
LVEP16
remains00
MC100EP16VC
AND8020
c 945 TRANSISTOR equivalent
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EN3475
Abstract: KEP66 MC100 MC100EP16VC MC100EP16VCD MC100EP16VCDR2 transistor 3005 33
Text: MC100EP16VC 3.3V / 5VĄECL Differential Receiver/Driver with High Gain and Enable Output The EP16VC is a world–class differential receiver/driver. The device is functionally equivalent to the EP16 and LVEP16 devices but with high gain and enable output.
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MC100EP16VC
EP16VC
LVEP16
r14525
MC100EP16VC/D
EN3475
KEP66
MC100
MC100EP16VC
MC100EP16VCD
MC100EP16VCDR2
transistor 3005 33
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IRF620
Abstract: No abstract text available
Text: HE D I 4055*452 GOGflMflQ Ü | 3 7 -"tf Data Sheet No. PD-9.317G INTERNATIONAL R E C T I F I E R INTERNATIONAL RECTIFIER HEXFET’ TRANSISTORS IOR IRF620 IRF621 'd IRF6SS N-Channel Ls 200 Volt, 0.8 Ohm HEXFET TO-220AB Plastic Package The HEXFET technology is the key to International Rec
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IRF620
IRF621
O-220AB
C-233
IRF620,
IRF621,
IRF622,
IRF623
T-39-11
C-234
IRF620
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Untitled
Abstract: No abstract text available
Text: 11E D | INTERNATIONAL R E C T I F I E R 4055 45 2 0 0 00 3 0 0 4 | Data Sheet No. PD-9.525A T -35-25 IN T E R N A T IO N A L R E C T IF IE R IOR AVALANCHE AND dv/dt RATED HEXFET IRFR220 TRANSISTORS IRFR222 IRFU220 N -C H A N N E L IRFU222 Product Summary 200 Volt, 0.80 Ohm HEXFET
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IRFR220
IRFR222
IRFU220
IRFU222
IRFR220,
IRFR222,
IRFU220,
IRFU222
IRFR220TR
554S2
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2sc4061
Abstract: No abstract text available
Text: High Speed Switching Transistors F X series ITO-220 Bipolar transistors NPN Type No. EIAJ T0-220 Absolute Maximum Ratings Electrical Characteristics V c eo VCE (min) (sat) (max) [V ] jc fT ton V be (sat) (max) (max) (typ) (max) [V ] [•c /w ] [M H z]
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ITO-220
T0-220
FTO-220
ITO-220
Fig82-3
2SC4061
2SC4663
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PDF
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Untitled
Abstract: No abstract text available
Text: High Speed Switching Transistors . ITO-220 TO-220 IT0-3P MT0-3P Bipolar transistors NPN Absolute Maximum Ratings Type No. Electrical Characteristics VcBO VcEO V ebo Ic Ib Pr Tstg Tj V CEO (sus) (min) [V ] [V ] [V ] [A] [A ] [W ] re i rc ] [V ] h FE (min)
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ITO-220
O-220
O-220
FTO-220
ITO-220
2SC4663
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PDF
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ts 4052
Abstract: 2sc 5241
Text: High Speed Switching Transistors FX series B ipolar transistors NPN ITO-220 TO -220 A bsolute M axim um Ratings VcEO V ebo Ic [V] [V] [A] 2SC4051 4052 Type No. E lectrical C haracteristics VcE V cE O IlFE (min) V be d jc (sat) (sat) (m ax) (m ax) (max) ton
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ITO-220
2SC4051
ITO-220
FTO-220
ts 4052
2sc 5241
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ITO-220
Abstract: "Bipolar Transistors"
Text: Ir'M ITO-220 Bipolar transistors NPN T O -220 Absolute Maximum Ratings Electrical Characteristics VCEO (sus) (min) [V ] hFE VcE (sat) (max) V be 6\o fT (sat) (max) (max) (typ) [°C /W ] [M H z ] [V ] ton ts tf (max) (max) M M (max) U s] Outline Type No.
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ITO-220
O-220
O-220
ITO-220
FTO-220
"Bipolar Transistors"
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tf s 544 a
Abstract: No abstract text available
Text: High Speed Sw itching Transistors F3 series Bipolartransistors NPN Parts No. EIAJ No. VCBO VCEO V ebo lc Ib Pt [V] [V] [V] [A] [A] [W] 3 1 45 500 400 7 6 2 50 10 4 100 VCEO 3164 hFE (sus) (m in) 2SC3162 3163 Electrical Characteristics Absolute Maximum Ratings
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2SC3162
O-220
2SC4051
ITO-220
ITO-220
2SC4663
tf s 544 a
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ic 4580
Abstract: SL 100 NPN Transistor hfe 4053 4833 4834 ITO-220 2SC3162 2SC4051 2SC4663
Text: H ig h S p e e d S w it c h in g T r a n s is t o r s F3 s er ie s Bipolar transistors NPN Electrica Characteristics Absolute Maximum Ratings Part No. VCEO EIAJ No. VCBO VCEO V ebo Ic IB Pt [V] [V] [V] [A] [A] [W] 3 1 45 500 400 7 6 2 50 10 4 100 (sus) (min)
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2SC3162
O-220
2SC4663
ITO-220
ic 4580
SL 100 NPN Transistor
hfe 4053
4833
4834
2SC3162
2SC4051
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2SC3219
Abstract: x3165 2SC321 TP8V45FX T10M20F3 T10W20F3 T10W40F3 T20M20F3 T3M40F3 T3V40F3
Text: POWER TRANSISTORS SHINDENGEN ELECTRIC HF G 3SE J> m 023.^307 GDGOaifl G ISHE J age * Ultra High Speed Switching Transisto F3 series 0 1 pel EIAJ No. » tt Ä * S fc Absolute Maximum Ratings £ Type No. Vcbo VCEO VEBO 3220 • lo IB PT Tstg IJ [•c ] DcJ V oeo
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2SC3219
T6V20F3
T10W20F3
T6M20F3
T10M20F3
TP3V45FX
y4053
T5V45FX
TP5V45FX
T8V45FX
x3165
2SC321
TP8V45FX
T10M20F3
T10W20F3
T10W40F3
T20M20F3
T3M40F3
T3V40F3
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Untitled
Abstract: No abstract text available
Text: Jp|j-0fpi QtjOfi QI Provisional Data Sheet No. PD-9.424B IGR Rectifier JANTX2N6784 HEXFET POWER MOSFET JANTXV2N6784 [REF:MIL-PRF-19500/556] [GENERIC:IRFF210] N -C H A N N E L 200 Volt, 1.50 HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transis
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JANTX2N6784
JANTXV2N6784
MIL-PRF-19500/556]
IRFF210]
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TRANSISTOR 2FE
Abstract: No abstract text available
Text: International I R Rectifier pd-9.h6id IRG4PC30U PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter
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IRG4PC30U
O-247AC
TRANSISTOR 2FE
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Untitled
Abstract: No abstract text available
Text: Provisional Data Sheet No. PD-9.1551 IQR Rectifier HEXFET POWER MOSFET IRFN350 N - CHA N N E L Product Summary 400 Volt, 0.315fi HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The effi cient geometry achieves very low on-state resistancecom
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IRFN350
315fi
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Untitled
Abstract: No abstract text available
Text: In te r n a tio n a l 549 provisional Data Sheet No. PD-9.1 IGR R ectifier HEXFET POWER MOSFET IRFN250 N -C H A N N E L Product Summary 200 Volt, 0.100ft HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The effi
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IRFN250
100ft
SS452
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transistor C946
Abstract: No abstract text available
Text: PD - 9.1114 International [^Rectifier IRGPC40KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast CoPack IGBT Features • • • • V ces = 600V Short circuit rated -10ns @125°C, VGE= 15V Switching-loss rating includes all "tail" losses
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IRGPC40KD2
-10ns
C-951
O-247AC
C-952
transistor C946
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