C 828 TRANSISTOR Search Results

C 828 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

C 828 TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2SK1828 Abstract: 2SK182 Text: TOSHIBA 2SK1828 T O S H IB A FIELD EFFECT T R A N S IS T O R SILIC O N N C H A N N E L M O S TYPE 2 S K 1 828 H IG H SPEED S W IT C H IN G A P P L IC A T IO N S A N A L O G S W ITC H A P P L IC A T IO N S 2.5V Gate Drive Low Threshold Voltage : Vth = 0.5~1.5V	OCR Scan	2SK1828 10//S 2SK1828 2SK182	PDF
SF 829 B Abstract: SF829 SF819 SF827 sf 829 d SF126 SF826 sf829c SF816 SF 827 d Text: FUNKAMATEUR-Bauelementemformation Silizium-npn-Transistoren in Epitaxie-Planar-Technologie SF 826 SF827 SF 828 SF 829 Hersteller: V EB Halbleiterwerk Frankfurt Oder TG L 43386 Kurzcharakteristik Grenzwerte (im Betriebstemperaturbereich) Parameter (Bedingungen)	OCR Scan	SF827 SF829 SF82B SF82S SF 829 B SF819 sf 829 d SF126 SF826 sf829c SF816 SF 827 d	PDF
Untitled Abstract: No abstract text available Text: BF840 BF841 SILICON PLANAR TRANSISTORS N -P-N transistors Marking BF840 = NC BF841 = ND PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 0 .H Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR ABSOLUTE MAXIMUM RATINGS BF840 Collector-base voltage open emitter	OCR Scan	BF840 BF841	PDF
BF840 Abstract: BF841 transistors marking ND transistors C 828 Text: BF840 BF841 IL SILICON PLANAR TRANSISTORS N -P -N transistors Marking BF840 = NC BF841 = ND PACKAGE O UTLIN E DETAILS ALL D IM EN SION S IN m m _3.0_ 2.8 0.48 0.38 0.14 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2 6 2.4 J1’ .0 2 ! 0.89 0.60 0.40	OCR Scan	BF840 BF841 33c14 BF840 BF841 transistors marking ND transistors C 828	PDF
Untitled Abstract: No abstract text available Text: BF840 BF841 SILICON PLANAR TRANSISTORS N -P -N transistors Marking BF840 = NC BF841 = ND PACKAGE O U TLIN E DETAILS ALL D IM EN SIO N S IN m m 3.0 2.8 0.14 0.09 0.48 1 0.38 1 1 3 0.70 0.50 1 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6 I 2.4 I1 .	OCR Scan	BF840 BF841	PDF
R005 FZ Abstract: transistors C 828 BF841 BF840 ic MARKING FZ Text: BF840 BF841 SILICON PLANAR TRANSISTORS N -P-N transistors M a y in g BF840 = NC BF841 = ND PA C K A G E O U TLIN E D ETA ILS A L L D IM EN SIO N S IN m m _3.0_ 2.8 0.14 0.09 0.48 0.38 2 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 0.70 0.50 2.6 1.4	OCR Scan	BF840 BF841 BF840 R005 FZ transistors C 828 BF841 ic MARKING FZ	PDF
.W07B Abstract: W07b 722G 2SB828 2SB82B 2SD1064 as1012 Text: Ordering number: EN 722G 2SB828/2SD1064 N0.722G PNP/NPN Epitaxial P lan ar Silicon Transistors 50V/12A Switching Applications A p p licatio n s • Relay drivers, high-speed inverters, converters, and other general high-current switching applications. F e a tu re s	OCR Scan	2SB828/2SD1064 0V/12A 2SB828 2SD1064 .W07B W07b 722G 2SB82B as1012	PDF
transistors BC 543 Abstract: BD 104 NPN BC827 BD 104 transistors d 826 bc 734 82s83 BC 828 BD 541 bc825 Text: SIE P SIEMENS • ÖZBSbGS 0041021 TS5 « S I E G SIEMENS AKTIENGESELLSCHAF - F s s - n PNP Silicon AF Transistors • • • • BD 826 . BD 830 High current gain High collector current Low collector-emitter saturation voltage Complementary types: BC 825, BC 827,	OCR Scan	Q62702-D1303 Q62702-D13Q4 Q62702-D1179 Q62702-D1257 Q62702-D1307 Q62702-D1308 Q62702-D61 Q62702-D1312 Q62702-D1313 Q62702-D1238 transistors BC 543 BD 104 NPN BC827 BD 104 transistors d 826 bc 734 82s83 BC 828 BD 541 bc825	PDF
Untitled Abstract: No abstract text available Text: Features • 8-bit Microcontroller Compatible with MCS 51 Products • Enhanced 8051 Architecture • • • • • – Single-clock Cycle per Byte Fetch – Up to 20 MIPS Throughput at 20 MHz Clock Frequency – Fully Static Operation: 0 Hz to 20 MHz – On-chip 2-cycle Hardware Multiplier	Original	64-byte	PDF
3654A Abstract: at89lp428 AT89s52 AT89LP828 at89s52 pwm at89s2051 pwm at89s52 development board at89s52 interrupt vector table pin of Atmel AT89s52 cdv0 Text: Features • 8-bit Microcontroller Compatible with MCS 51 Products • Enhanced 8051 Architecture • • • • • – Single-clock Cycle per Byte Fetch – Up to 20 MIPS Throughput at 20 MHz Clock Frequency – Fully Static Operation: 0 Hz to 20 MHz – On-chip 2-cycle Hardware Multiplier	Original	64-byte 128-byte 3654A at89lp428 AT89s52 AT89LP828 at89s52 pwm at89s2051 pwm at89s52 development board at89s52 interrupt vector table pin of Atmel AT89s52 cdv0	PDF
C 828 Transistor Abstract: C 828 Transistor pins TRANSISTOR C 369 transistor c 828 low level Mil-R-39016 iC 828 Transistor transistor 828 MIL-R-39016/9 828 diode MIL-R-39016-9 Text: MA MAD MADD MAT TO-5 HIGH-PERFORMANCE RELAYS • ■ ■ MA MAD MADD MAT STANDARD TO-5 HIGH-PERFORMANCE RELAY STANDARD TO-5 DIODE SUPPRESSED HIGH-PERFORMANCE RELAY STANDARD TO-5 DIODE SUPPRESSED/PROTECTED HIGH-PERFORMANCE RELAY STANDARD TO-5 DIODE SUPPRESSED/TRANSISTOR DRIVEN HIGH-PERFORMANCE	Original	MIL-R-39016/9 MIL-R-39016/15 MIL-R-39016/20 MIL-R-28776/1 C 828 Transistor C 828 Transistor pins TRANSISTOR C 369 transistor c 828 low level Mil-R-39016 iC 828 Transistor transistor 828 MIL-R-39016/9 828 diode MIL-R-39016-9	PDF
C 828 Transistor Abstract: transistor c 828 cii to-5 type mad relay Text: MA MAD MADD MAT TO-5 HIGH-PERFORMANCE RELAYS • ■ ■ MA MAD MADD MAT STANDARD TO-5 HIGH-PERFORMANCE RELAY STANDARD TO-5 DIODE SUPPRESSED HIGH-PERFORMANCE RELAY STANDARD TO-5 DIODE SUPPRESSED/PROTECTED HIGH-PERFORMANCE RELAY STANDARD TO-5 DIODE SUPPRESSED/TRANSISTOR DRIVEN HIGH-PERFORMANCE	Original	MIL-R-39016/9 MIL-R-39016/15 MIL-R-39016/20 MIL-R-28776/1 C 828 Transistor transistor c 828 cii to-5 type mad relay	PDF
828BD Abstract: BD NPN transistors BD 826 NPN Text: SIEMENS/ SPCLi SEMICOND S ûûD » • ö23 b32 Q 00142bQ b « S I P T-'Zfl-Ol Transistors — bipolar A F tran sisto rs P lastic package TO 202 Maximum ratings Type = N PNP = P V ceo BD 825'* BD 826" BD 827" BD 828” BD 829" BD 830" N P N P N P 45 45 60	OCR Scan	00142bQ 828BD BD NPN transistors BD 826 NPN	PDF
transistors C 828 Abstract: BF840 Text: CDU BF840 BF841 SILICON PLANAR TRANSISTORS N -P -N transistors M arking BF840 = NC BF841 = ND PACKAGE O UTLIN E DETAILS ALL DIM EN SION S IN mm 3.0 0.14 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR ' ABSOLUTE M AXIM UM RATIN GS BF840 Collector-base voltage open emitter	OCR Scan	BF840 BF841 BF840 BF841 transistors C 828	PDF

C 828 Transistor Abstract: B 828 transistor transistor c 828 transistor 828 d marking code dpak transistor C 828 Transistor NPN LC marking code transistor Text: Central CJD44H11 NPN CJD45H11 PNP Semiconductor Corp. COMPLEMENTARY SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD44H11, CJD45H11 types are Complementary Silicon Power Transistors manufactured in a surface mount package designed for switching and power	OCR Scan	CJD44H11 CJD45H11 CJD44H11, CP219 26-September C 828 Transistor B 828 transistor transistor c 828 transistor 828 d marking code dpak transistor C 828 Transistor NPN LC marking code transistor	PDF
Untitled Abstract: No abstract text available Text: ANALOG DEVICES FEATURES Excellent Video Performance Differential Gain & Phase Error of 0.01% & 0.05° High Speed 130 MHz 3 dB Bandwidth G = +2 450 V /( jis Slew Rate 80 ns Settling Tim e to 0.01% Low Power 15 m A Max Power Supply Current High Output Drive Capability:	OCR Scan		PDF
C 828 Transistor Abstract: marking code 20A iC 828 Transistor LB1200 Text: Central CZT5338 Semiconductor Corp. NPN SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT5338 type is an NPN silicon power transistor manufac tured by the epitaxial planar process, epoxy mold ed in a surface mount package, designed for	OCR Scan	CZT5338 OT-223 CP219 26-September OT-223 C 828 Transistor marking code 20A iC 828 Transistor LB1200	PDF
2SD1741 Abstract: 2SB1171 2SB1171A 2SD1741A ic 4604 tc 4604 Text: Power Transistors 2 S D 1 7 4 1 , 2SD1741, 2SD1741A 2 S D 1 7 4 1 A Silicon P N P Triple-Diffgsed P lanar Type P ackage Dim ensions Pow er Amplifier T V Vertical Deflection Output Pair with 2 S B 1 171, 2 S B 11 71 A • Features • High DC cu rre n t gain Iife and good linearity	OCR Scan	2SD1741, 2SD1741A 2SD1741 2SD1741A 3Efl52 2SB1171 2SB1171A ic 4604 tc 4604	PDF
Untitled Abstract: No abstract text available Text: MJE13004 MJE13005 S G S -T H O M S O N ^□ gytemKgir^MOOs HIGH VOLTAGE POWER SWITCH DESCRIPTION The MJE13004/13005 are silicon multiepitaxial me sa NPN transistors in JedecTO-220 plastic package particularly intended for switch-mode applications. TO-220	OCR Scan	MJE13004 MJE13005 MJE13004/13005 JedecTO-220 O-220 MJE13004-MJE13005	PDF
ALLIED 8546576 Abstract: 854-6502 C959 854-6565 854-6574 854-6525 transistor 5724 scr 4059 SC250E SC416 TRANSISTOR Text: Mallory Sonalert and Minilert Audible Warning Devices Visit MalloryÕs Website at www.nacc-mallory.com PC Board Mounted Sonalert Signal Compact Sonalert II Audible Signal c 4-28 VDC c Continuous Tone 64-78 dB Sound Level c 3-16 mA Typical Operating Current	Original	c4-28 c3-16 SBM428. SC250E SC250F LSC616N SC628D SC628H; ALLIED 8546576 854-6502 C959 854-6565 854-6574 854-6525 transistor 5724 scr 4059 SC416 TRANSISTOR	PDF
3N171 Abstract: VN10MA C 828 Text: _ _ C U lO O IC V N-Channel Enhancement Mode MOSFET Switch CORPORATION 3N170/3N171 FEATURES HANDLING PRECAUTIONS • • • • MOS field-effect transistors have extremely high input resistance and can be damaged by the accumulation of excess static charge. To avoid possible damage to the device	OCR Scan	3N170/3N171 3N171 VN10MA C 828	PDF
bd 825 10 Abstract: SIEMENS BD 827-10 D1305 ti 829 IC 8256 bd 827-10 d1310 Q62702-D1305 BD829 D1113 Text: sie j> ö?3Sbci5 oomflib bbfi m s i E G m SIEMENS AKTIEN6ESELLSCHAF SIEM EN S BD 825 . BD 829 NPN Silicon AF Transistors • • • • High current gain High collector current Low collector-emitter saturation voltage Complementary types: BD 826, BD 828,	OCR Scan	Q62702-D1135 Q62702-D149 Q62702-D1213 Q62702-D60 Q62702-D1305 Q62702-D1306 Q62702-D1113 Q62702-D1309 Q62702-D1310 Q62702-D1311 bd 825 10 SIEMENS BD 827-10 D1305 ti 829 IC 8256 bd 827-10 d1310 BD829 D1113	PDF
2SC2121 Abstract: cannon terminal g25a AC42C Text: 2 5 2 / 'J D > N P N = » E « y . - y - J B h > ; ^ SILICON NPN TRIPLE DIFFUSED M ESA TRANSISTOR O » » E E * 4 S’ T o High Voltage Switching Applications • Â i Œ T t y?m ; v < S Î n M Œ ^ sÎS^> ; Unit In C! E S = 7 5 0 V v CE sat = 5v (Max.) at Iq= 4A , Ijj=1A	OCR Scan	2sc2121 2SC2121 cannon terminal g25a AC42C	PDF
Untitled Abstract: No abstract text available Text: N-Channel Enhancement Mode MOSFET Switch caioqic CORPORATION 3N170/3N171 FEATURES HANDLING PRECAUTIONS • • • • MOS field-effect transistors have extremely high input resistance and can be damaged by the accumulation of excess static charge. To avoid possible damage to the device	OCR Scan	3N170/3N171 00CH42	PDF

C 828 TRANSISTOR Search Results

C 828 TRANSISTOR Result Highlights (5)

C 828 TRANSISTOR Datasheets Context Search

2SK1828

SF 829 B

Untitled

BF840

Untitled

R005 FZ

.W07B

transistors BC 543

Untitled

3654A

C 828 Transistor

C 828 Transistor

828BD

transistors C 828

C 828 Transistor

Untitled

C 828 Transistor

2SD1741

Untitled

ALLIED 8546576

3N171

bd 825 10

2SC2121

Untitled