bd 825 10
Abstract: SIEMENS BD 827-10 D1305 ti 829 IC 8256 bd 827-10 d1310 Q62702-D1305 BD829 D1113
Text: sie j> ö?3Sbci5 oomflib bbfi m s i E G m SIEMENS AKTIEN6ESELLSCHAF SIEM EN S BD 825 . BD 829 NPN Silicon AF Transistors • • • • High current gain High collector current Low collector-emitter saturation voltage Complementary types: BD 826, BD 828,
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Q62702-D1135
Q62702-D149
Q62702-D1213
Q62702-D60
Q62702-D1305
Q62702-D1306
Q62702-D1113
Q62702-D1309
Q62702-D1310
Q62702-D1311
bd 825 10
SIEMENS BD 827-10
D1305
ti 829
IC 8256
bd 827-10
d1310
BD829
D1113
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SF 829 B
Abstract: SF829 SF819 SF827 sf 829 d SF126 SF826 sf829c SF816 SF 827 d
Text: FUNKAMATEUR-Bauelementemformation Silizium-npn-Transistoren in Epitaxie-Planar-Technologie SF 826 SF827 SF 828 SF 829 Hersteller: V EB Halbleiterwerk Frankfurt Oder TG L 43386 Kurzcharakteristik Grenzwerte (im Betriebstemperaturbereich) Parameter (Bedingungen)
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SF827
SF829
SF82B
SF82S
SF 829 B
SF819
sf 829 d
SF126
SF826
sf829c
SF816
SF 827 d
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2SC4081RT1
Abstract: No abstract text available
Text: 2SC4081RT1 General Purpose Amplifier Transistor NPN Surface Mount • Moisture Sensitivity Level: 1 http://onsemi.com MAXIMUM RATINGS TA = 25°C Symbol Value Unit Collector−Base Voltage V(BR)CBO 60 Vdc Collector−Emitter Voltage V(BR)CEO 50 Vdc Emitter−Base Voltage
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2SC4081RT1
2SC4081RT1/D
2SC4081RT1
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2SA1576ART1
Abstract: No abstract text available
Text: 2SA1576ART1 General Purpose Amplifier Transistors PNP Surface Mount • Moisture Sensitivity Level: 1 http://onsemi.com MAXIMUM RATINGS TA = 25°C Symbol Value Unit Collector−Base Voltage V(BR)CBO 60 Vdc Collector−Emitter Voltage V(BR)CEO 50 Vdc Emitter−Base Voltage
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2SA1576ART1
2SA1576ART1/D/D
2SA1576ART1
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MSC2295
Abstract: MSC2295–BT1
Text: MSC2295−BT1, MSC2295−CT1 Preferred Device NPN RF Amplifier Transistors Surface Mount Features http://onsemi.com • Pb−Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS TA = 25°C Symbol Value Unit Collector−Base Voltage Rating V(BR)CBO 30
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MSC2295-BT1,
MSC2295-CT1
MSC2295-BT1/D
MSC2295
MSC2295–BT1
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npn, transistor, sc 107 b
Abstract: No abstract text available
Text: MSC3930−BT1 Preferred Device NPN RF Amplifier Transistor • Pb−Free Package is Available http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector−Base Voltage V(BR)CBO 30 Vdc Collector−Emitter Voltage V(BR)CEO
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MSC3930-BT1
MSC3930-BT1/D
npn, transistor, sc 107 b
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Untitled
Abstract: No abstract text available
Text: MSC2295−BT1, MSC2295−CT1 Preferred Device NPN RF Amplifier Transistors Surface Mount Features http://onsemi.com • Pb−Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS TA = 25°C Symbol Value Unit Collector−Base Voltage V(BR)CBO 30 Vdc Collector−Emitter Voltage
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MSC2295â
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Untitled
Abstract: No abstract text available
Text: 2SC4081RT1 General Purpose Amplifier Transistor NPN Surface Mount • Moisture Sensitivity Level: 1 w This device is available in Pb−free package s . Specifications herein http://onsemi.com apply to both standard and Pb−free devices. Please see our website at
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2SC4081RT1
SC-70
2SC4081RT1/D
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Untitled
Abstract: No abstract text available
Text: MSC3930−BT1 Preferred Device NPN RF Amplifier Transistor • Pb−Free Package is Available http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector−Base Voltage V(BR)CBO 30 Vdc Collector−Emitter Voltage V(BR)CEO
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MSC3930â
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Untitled
Abstract: No abstract text available
Text: 2SA1576ART1 General Purpose Amplifier Transistors PNP Surface Mount • Moisture Sensitivity Level: 1 w This device is available in Pb−free package s . Specifications herein http://onsemi.com apply to both standard and Pb−free devices. Please see our website at
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2SA1576ART1
2SA1576ART1/D/D
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MSB709
Abstract: No abstract text available
Text: MSB709−RT1 Preferred Device PNP General Purpose Amplifier Transistor Surface Mount Features http://onsemi.com • Pb−Free Package is Available COLLECTOR 3 MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector − Base Voltage V(BR)CBO −60 Vdc
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MSB709-RT1
MSB709-RT1/D
MSB709
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Untitled
Abstract: No abstract text available
Text: MSB709−RT1 Preferred Device PNP General Purpose Amplifier Transistor Surface Mount Features http://onsemi.com • Pb−Free Package is Available COLLECTOR 3 MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector − Base Voltage V(BR)CBO −60 Vdc
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MSB709â
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marking 12Y
Abstract: marking code onsemi MSC2712GT1 MSC2712GT1G MSC2712YT1 MSC2712YT1G 12Y marking
Text: MSC2712GT1, MSC2712YT1 General Purpose Amplifier Transistor NPN Surface Mount http://onsemi.com Features • Moisture Sensitivity Level: 1 • Pb−Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS TA = 25°C Symbol Value Unit Collector−Base Voltage
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MSC2712GT1,
MSC2712YT1
SC-59
MSC2712GT1/D
marking 12Y
marking code onsemi
MSC2712GT1
MSC2712GT1G
MSC2712YT1
MSC2712YT1G
12Y marking
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MSA1162GT1
Abstract: MSA1162GT1G MSA1162YT1 MSA1162YT1G
Text: MSA1162GT1, MSA1162YT1 General Purpose Amplifier Transistors PNP Surface Mount http://onsemi.com Features • Moisture Sensitivity Level: 1 • ESD Rating: TBD • Pb−Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS TA = 25°C Rating Symbol Value
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MSA1162GT1,
MSA1162YT1
MSA1162GT1/D
MSA1162GT1
MSA1162GT1G
MSA1162YT1
MSA1162YT1G
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Untitled
Abstract: No abstract text available
Text: 2SC2712GT1G General Purpose Amplifier Transistor NPN Surface Mount • Moisture Sensitivity Level: 1 • This is a Pb−Free Device http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector−Base Voltage V(BR)CBO 60 Vdc
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2SC2712GT1G
SC-59
2SC2712GT1/D
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MSD42SWT1
Abstract: MSD42SWT1G d4 sot323
Text: MSD42SWT1 Preferred Device NPN Silicon General Purpose High Voltage Transistor This NPN Silicon Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package which is designed for low power surface mount applications.
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MSD42SWT1
SC-70/SOT-323
MSD42SWT1/D
MSD42SWT1
MSD42SWT1G
d4 sot323
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mps a12
Abstract: mpsa12
Text: MPSA12 Darlington Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCES 20 Vdc Emitter Base Voltage VEBO 10 Vdc PD 625 5.0 mW mW/°C TJ, Tstg −55 to +150 °C Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient
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MPSA12
MPSA13/D
mps a12
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MSD602
Abstract: MSD602RT1
Text: MSD602−RT1 Preferred Device NPN General Purpose Amplifier Transistor Surface Mount Features http://onsemi.com • Pb−Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector−Base Voltage V(BR)CBO 60 Vdc
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MSD602-RT1
MSD602-RT1/D
MSD602
MSD602RT1
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Untitled
Abstract: No abstract text available
Text: MSB710−RT1 Preferred Device PNP General Purpose Amplifier Transistor Surface Mount Features http://onsemi.com • Pb−Free Package is Available COLLECTOR 3 MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector−Base Voltage V(BR)CBO −60 Vdc
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MSB710â
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MPSA12
Abstract: MPSA12RLRA MPSA12RLRP MPSA12RLRPG mps a12 Marking code mps
Text: MPSA12 Darlington Transistors NPN Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCES 20 Vdc Emitter Base Voltage VEBO 10 Vdc PD 625 5.0 mW mW/°C TJ, Tstg
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MPSA12
MPSA12/D
MPSA12
MPSA12RLRA
MPSA12RLRP
MPSA12RLRPG
mps a12
Marking code mps
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PDF
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2SC2712GT1G
Abstract: MMBT3904
Text: 2SC2712GT1G Medium Frequency NPN Amplifier Transistor 50 V, 200 mA, 80 MHz The 2SC2712GT1G is designed for low to medium frequency applications such as wireless toys. The targeted design enables improved performance versus the industry standard MMBT3904* in
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2SC2712GT1G
2SC2712GT1G
MMBT3904*
SC-59
2SC2712GT1/D
MMBT3904
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Untitled
Abstract: No abstract text available
Text: MPS6560 Audio Transistor NPN Silicon Features • Pb−Free Package is Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 25 Vdc Collector −Base Voltage VCBO 25 Vdc Emitter −Base Voltage
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MPS6560
MPS6560/D
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BSS64LT1G
Abstract: BSS64LT1
Text: BSS64LT1 Driver Transistor NPN Silicon Features • Pb−Free Package is Available http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 80 Vdc Collector −Base Voltage VCBO 120 Vdc Emitter −Base Voltage
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BSS64LT1
BSS64LT1/D
BSS64LT1G
BSS64LT1
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Untitled
Abstract: No abstract text available
Text: MSD601−RT1, MSD601−ST1 Preferred Device NPN General Purpose Amplifier Transistors Surface Mount Features http://onsemi.com • Pb−Free Packages are Available SC−59 PACKAGE SINGLE SILICON SWITCHING DIODES 40/80 V−100 mA SURFACE MOUNT MAXIMUM RATINGS TA = 25°C
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MSD601-RT1,
MSD601-ST1
SC-59
MSD601-RT1/D
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