C 879 TRANSISTOR Search Results

C 879 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

C 879 TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
6v 150 ohm relay ls1 Abstract: 6v ls1 relay IC LM386 Hama Adapter board rockwell modem guide ONDA Text: RC229ATF/1 Modem Designer’s Guide Rockwell I nte rn a tio na l Digital C o m m u n ic a t io n s Division 1994 Rockwell International All Rights Reserved Printed in U.S.A. Order No. 879 January 7, 1994 NOTICE Information furnished by Rockwell International Corporation is believed to be accurate and reliable. However, no responsibility is assumed	OCR Scan	RC229ATF/1 IL60018 J22196 6v 150 ohm relay ls1 6v ls1 relay IC LM386 Hama Adapter board rockwell modem guide ONDA	PDF
Untitled Abstract: No abstract text available Text: SIEMENS NPN Silicon Darlington Transistors BC 875 . BC 879 • High current gain • Low collector-emitter saturation voltage • Complementary types: BC 876, BC 878 BC 880 PNP Type Marking BC 875 BC 877 BC 879 Ordering Code PinClonfiguration 1 2 3 Package1)	OCR Scan	C62702-C853 C62702-C854 C62702-C855 EHP0022B 120blb CHP00232 fl235b05	PDF
hFE-1000 BC Abstract: C943 bc879 c942 bc 384 b bc 877 bc 390 C853 bc877 876 pin Text: NPN Silicon Darlington Transistors BC 875 … BC 879 High current gain ● Low collector-emitter saturation voltage ● Complementary types: BC 876, BC 878 BC 880 PNP ● 2 3 1 Type Marking Ordering Code Pin Configuration 1 2 3 Package1) BC 875 BC 877 BC 879	Original	C62702-C853 C62702-C854 C62702-C855 hFE-1000 BC C943 bc879 c942 bc 384 b bc 877 bc 390 C853 bc877 876 pin	PDF
bc 877 Abstract: C853 C62702-C853 C62702-C854 C62702-C855 marking bc BC879 bc 879 BC875 Text: NPN Silicon Darlington Transistors BC 875 … BC 879 High current gain ● Low collector-emitter saturation voltage ● Complementary types: BC 876, BC 878 BC 880 PNP ● Type Marking Ordering Code BC 875 BC 877 BC 879 – C62702-C853 C62702-C854 C62702-C855	Original	C62702-C853 C62702-C854 C62702-C855 bc 877 C853 C62702-C853 C62702-C854 C62702-C855 marking bc BC879 bc 879 BC875	PDF
transistor k 975 Abstract: c 879 transistor afe 1000 BD880 darlington bd 876 BD876 d966 transistor bd 975 transistor BD878 BD 875 Text: 2SC » • 023SbOS 0QGH421 3 ■ S I E 6 - ' NPN Silicon Planar Darlington Transistors SIEMENS AKTIEN6ESELLSCHAF 21 T-33-29 BD 875 BD 877 BD 879 ° BD 875, BD 877, and BD 879 are epitaxial NPN silicon planar darlington transistors in TO 126 plastic package 12 A 3 DIN 41869, sheet 4 . These darlington transistors	OCR Scan	023SbOS T-33-29 Q62702-D902 Q62702-D903 Q62702-D904 Q62902-B63 Q62902-B62 25imi BD977 transistor k 975 c 879 transistor afe 1000 BD880 darlington bd 876 BD876 d966 transistor bd 975 transistor BD878 BD 875	PDF
c 879 transistor Abstract: darlington bd 876 bd 879 transistor BD 468 S BO-87 877 transistor Text: 2SC » • 023SbOS 0QGH421 3 ■ S I E 6 - ' NPN Silicon Planar Darlington Transistors SIEMENS AKTIEN6ESELLSCHAF 21 T-33-29 BD 875 BD 877 BD 879 ° BD 875, BD 877, and BD 8 7 9 are epitaxial NPN silicon planar darlington transistors in TO 126 plastic package 12 A 3 DIN 4 1 8 6 9 , sheet 4 . These darlington transistors	OCR Scan	023SbOS 0QGH421 T-33-29 25roa c 879 transistor darlington bd 876 bd 879 transistor BD 468 S BO-87 877 transistor	PDF
BC875 Abstract: BC879 c 879 transistor BC876 BC880 BC879 darlington BC877 BC878 Text: b SE D • N AUER bbS3^31 BC875 BC877 BC879 APX []027hG2 SI D PHILIPS/DISCRETE V SMALL-SIGNAL DARLINGTON TRANSISTORS NPN epitaxial small-signal Darlington transistors, each in a plastic TO-92 envelope with an integrated diode and resistor. They can be used for general purpose low frequency applications and as relay drivers etc.	OCR Scan	027hG2 BC875 BC877 BC879 BC876, BC878, BC880. DD27hD4 BC879 c 879 transistor BC876 BC880 BC879 darlington BC878	PDF
Untitled Abstract: No abstract text available Text: □RE D • bbS3^31 □D27bD2 SID H A P X BC875 BC877 BC879 N AUER PHILIPS/DISCRETE SM ALL-SIGNAL DARLINGTON TRANSISTORS NPN epitaxial small-signal Darlington transistors, each in a plastic TO-92 envelope with an integrated diode and resistor. They can be used for general purpose low frequency applications and as relay drivers etc.	OCR Scan	D27bD2 BC875 BC877 BC879 BC876, BC878, BC880.	PDF
c 879 transistor Abstract: Transistor bc 879 S879T transistors BC 293 low noise transistors vhf bc238C S779T Text: TELEFUNKEN ELECTRONIC file D • fi'JSOO'lb 0005432 T H A L 6 6 i Marked with: 779 T n ilL itF IU lK lK iK l electronic Creative Technologies Marked with: 879 S 779 T S 879 T Silicon PNP RF Transistor Applications: UHF/VHF high current input and mixer stages	OCR Scan	S779T S879T 569-GS c 879 transistor Transistor bc 879 S879T transistors BC 293 low noise transistors vhf bc238C	PDF
Untitled Abstract: No abstract text available Text: BC875 BC877 BC879 SMALL-SIGNAL DARLINGTON TRANSISTORS NPN e p itaxia l sm all-serial D a rlington transistors, each in a plastic TO -92 package w ith an integrated diode and resistor. They can be used fo r general purpose low frequency applications and as relay drivers etc.	OCR Scan	BC875 BC877 BC879 BC876, BC878, BC880. BC875	PDF
G200 Abstract: 894 transistor 5r1 resistor Text: PTF 10195 125 Watts, 869–894 MHz GOLDMOS Field Effect Transistor Description • • The 10195 is an internally matched 125–watt GOLDMOS FET intended for cellular, GSM, D-AMPS, CDMA and EDGE applications. This device operates at 53% efficiency with 13 dB of gain minimum. Full gold	Original	P5182-ND3 P4525-ND 220QBK-ND 1-877-GOLDMOS 1522-PTF G200 894 transistor 5r1 resistor	PDF
capacitor 100uF 50V Abstract: Ericsson Microelectronics ericsson gsm c 879 transistor G200 100B4R3 Text: PTF 10195 125 Watts, 869–894 MHz GOLDMOS Field Effect Transistor Description • • The 10195 is an internally matched 125–watt GOLDMOS FET intended for cellular, GSM, D-AMPS, CDMA and EDGE applications. This device operates at 53% efficiency with 13 dB of gain minimum. Full gold	Original	20yP4525-ND 100uF Digi-KeyP5182-ND 1301-RPM 22AWG, 220ohm 220QBK-ND 1-877-GOLDMOS 1522-PTF capacitor 100uF 50V Ericsson Microelectronics ericsson gsm c 879 transistor G200 100B4R3	PDF
UC3843 step down converter Abstract: UC3843 sepic step up converter ,UC3843 step up converter uc3843 step up TL494 step up uc3843 step down TL494 step down UC3843 step up converter TL494 AC-DC CONVERTER UC3843 sepic converter Text: CHAPTER 1 Selector Guide http://onsemi.com 6 http://onsemi.com 7 ON Semiconductor Switching Controllers Selection Tables AC−DC/Isolated Switching PFC/PWM Combo Page 14 Power Factor Correction (Page 15) Flyback (Low Power) Forward (Low Power) Half−Bridge	Original	UC3843, Non-UC3843, UC3825 SO-16 NCP1561DR2 UC3843 step down converter UC3843 sepic step up converter ,UC3843 step up converter uc3843 step up TL494 step up uc3843 step down TL494 step down UC3843 step up converter TL494 AC-DC CONVERTER UC3843 sepic converter	PDF
Untitled Abstract: No abstract text available Text: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA TELEPHONE: 979 378-2022 (212)227FAX: (879) 3784880 2N 6083 NPN SILICON RF POWER TRANSISTORS •MAXIMUM RATINGS . . . designed (or 12.5 Voll VHP large-signal power amplifier applications required in military and industrial equipment operating to	Original	227FAX: 225MHz. ove35 2N6083 3N6083	PDF

Untitled Abstract: No abstract text available Text: SIEMENS BCR 135S NPN Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, 4 driver circuit 5 6 ’ Two galvanic internal isolated Transistors in one package >Built in bias resistor (R1= 10kii, R2= 47kii) 3 2 1 WJs CM II CO	OCR Scan	10kii, 47kii) VPS05604. OT-363 flS35tiD D12Q7Ebi A235b05	PDF
nec 2532 Abstract: NEC JAPAN 282 110 01 NEC 282 185 01 816-102 2SC5014 2SC5014-T1 2SC5014-T2 NEC 2134 transistor Text: DATA SHEET SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fT = 12 GHz TYP. in millimeters • Low Noise, High Gain	Original	2SC5014 2SC5014) 2SC5014-T2 nec 2532 NEC JAPAN 282 110 01 NEC 282 185 01 816-102 2SC5014 2SC5014-T1 2SC5014-T2 NEC 2134 transistor	PDF
5V68 Abstract: c 879 transistor PDTA144EE Text: Philips Semiconductors Preliminary specification PNP resistor-equipped transistor PDTA144EE FEATURES • Built-in bias resistors R1 and R2 typ. 47 k£l each • Simplification of circuit design • Reduces number of components and board space. APPLICATIONS	OCR Scan	PDTA144EE SC-75 PDTC144EE. MGA833 5V68 c 879 transistor PDTA144EE	PDF
C942 Abstract: C943 bc 877 C62702-C941 C62702-C943 C62702-C942 bc876 bc880 bc 880 bc 878 Text: PNP Silicon Darlington Transistors BC 876 … BC 880 High current gain ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BC 875, BC 877, BC 879 NPN ● Type Marking Ordering Code BC 876 BC 878 BC 880 – C62702-C943	Original	C62702-C943 C62702-C942 C62702-C941 C942 C943 bc 877 C62702-C941 C62702-C943 C62702-C942 bc876 bc880 bc 880 bc 878	PDF
darlington bd 876 Abstract: transistor bd 126 BD876 BD880 relay 876 BD transistor bd880 siemens BD 35 transistor TRANSISTOR BD 137 darlington bd Text: esc D a i fi23St.0S 0 0 0 4 4 2 3 7 H S IE 6 ^ PNP Silicon Planar Darlington Transistors SIEMENS AKTIEN6ESELLSCHAF h23 T-33-31 * BD 876 BD 878 BD 880 ° BD 876, BD 878, and BD 880 are epitaxial PNP silicon planar darlington transistors in TO 126 plastic package 12 A 3 DIN 41 869, sheet 4 . These darlington transistors	OCR Scan	A23Sfc QQ044S3 T-33-31 Q62702-D908 Q62702-D907 Q62702-D906 Q62902-B63 Q62902-B62 125min darlington bd 876 transistor bd 126 BD876 BD880 relay 876 BD transistor bd880 siemens BD 35 transistor TRANSISTOR BD 137 darlington bd	PDF
Untitled Abstract: No abstract text available Text: DTC114GU/DTC114GK/DTC114GS/DTC114GF DTC114GL/DTC114GA/DTC114GV DTC114GU/DTC114GK/DTC114GS/DTC114GF DTC114GL/DTC114GA/DTC114GV N : 7 > N ~7 > *r V; V 'J ' t - 7 ^/Transistor Switch Digital Transistors Includes Resistors • 41-JI2\f';±ll// Dimensions (Unit: mm)	OCR Scan	DTC114GU/DTC114GK/DTC114GS/DTC114GF DTC114GL/DTC114GA/DTC114GV 41-JI2\f' 100MHz DTC114G	PDF
lt326 Abstract: 2SD1845 Text: Power Transistors 2S D 18 45 2SD1845 Silicon N PN Triple-D iffused P lanar Type Package Dim ensions Horizontal Deflection Output • Features • D am per diode built-in • Minimizes external com ponent counts and simplifies circuitry • High breakdow n voltage, high reliability	OCR Scan	2SD1845 75kHz T326S2 lt326 2SD1845	PDF
BC87 Abstract: No abstract text available Text: SIEMENS PNP Silicon Darlington Transistors • BC 876 . BC 880 High current gain • High collector current • Low collector-emitter saturation voltage • Complementary types: BC 875, BC 877, BC 879 NPN Type Marking BC 876 BC 878 BC 880 Ordering Code	OCR Scan	C62702-C943 C62702-C942 C62702-C941 235b05 BC876 BC87	PDF
NEC 2532 n 749 Abstract: NEC 2532 PT1060 transistor NEC D 822 P transistor NEC D 587 NEC 2134 transistor transistor c 6091 transistor sp 772 SP 2822 Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • Small Package • High Gain Bandwidth Product fr = 12 GHz TYP. • Low Noise, High Gain • Low Voltage Operation	OCR Scan	2SC5014 2SC5014-T1 2SC5014-T2 2SC5014) NEC 2532 n 749 NEC 2532 PT1060 transistor NEC D 822 P transistor NEC D 587 NEC 2134 transistor transistor c 6091 transistor sp 772 SP 2822	PDF
c 879 transistor Abstract: MPS-2926 stu 407 MPS2926 100-C Text: MPS2926 silicon NPN SILICON ANNULAR TRANSISTOR NPN SILICON AMPLIFIER TRANSISTOR . . . designed for use in amplifier applications. • Collector-Emitter Breakdown Voltage — B V q e o = 18 Vd c • Small-Signal Current Gain — hfe •35-470 M A X IM U M R A T IN G S	OCR Scan	MPS2926 MPS2926 c 879 transistor MPS-2926 stu 407 100-C	PDF

C 879 TRANSISTOR Search Results

C 879 TRANSISTOR Result Highlights (5)

C 879 TRANSISTOR Datasheets Context Search

6v 150 ohm relay ls1

Untitled

hFE-1000 BC

bc 877

transistor k 975

c 879 transistor

BC875

Untitled

c 879 transistor

Untitled

G200

capacitor 100uF 50V

UC3843 step down converter

Untitled

Untitled

nec 2532

5V68

C942

darlington bd 876

Untitled

lt326

BC87

NEC 2532 n 749

c 879 transistor