tca 945
Abstract: 12A200S IR10 RCR-2368B MARKING CODE JN marking 2501 TCA 208
Text: OUTLINE Type TCA Type TCA is a tantalum solid electrolytic capacitor which uses conductive polymer as cathode layer. Their equivalent series resistance (ESR) is extremely lowered with the characteristics of the polymer having high electric conductivity.
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7343L
Abstract: tca 4001
Text: OUTLINE Type TCA is a tantalum solid electrolytic capacitor which uses conductive polymer as cathode layer. Their equivalent series resistance ESR is extremely lowered with the characteristics of the polymer having high electric conductivity. This ensures higher permissible ripple current and excellent noise absorption performance on high-frequency circuits.
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RN10U
Abstract: No abstract text available
Text: P-TCA-E006 OUTLINE (Type TCA) Type TCA is a tantalum solid electrolytic capacitor which uses conductive polymer as cathode layer. Their equivalent series resistance (ESR) is extremely lowered with the characteristics of the polymer having high electric conductivity.
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P-TCA-E006)
RN10U
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Untitled
Abstract: No abstract text available
Text: No. P-TCA-002 DATE 2007-11 PRODUCTS DATA SHEET Tantalum Solid Electrolytic Capacitors with Conductive Polymer RoHS COMPLIANT LEAD FREE Type TCA OUTLINE Type TCA is a tantalum solid electrolytic capacitor which uses conductive polymer as cathode layer. Their equivalent series resistance ESR is extremely lowered with the characteristics of the polymer having high electric conductivity.
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P-TCA-002
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TCA 160c
Abstract: RCR-2368B m1 marking code marking code M1 marking A7 4001
Text: No. P-TCA-003 DATE 2008-10 PRODUCTS DATA SHEET Tantalum Solid Electrolytic Capacitors with Conductive Polymer RoHS COMPLIANT LEAD FREE Type TCA OUTLINE Type TCA is a tantalum solid electrolytic capacitor which uses conductive polymer as cathode layer. Their equivalent series resistance ESR is extremely lowered with the characteristics of the polymer having high electric conductivity.
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P-TCA-003
TCA 160c
RCR-2368B
m1 marking code
marking code M1
marking A7 4001
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AN1294
Abstract: PD57006 PD57006-E PD57006S PD57006S-E PD57006STR-E PD57006TR-E PD57006E
Text: PD57006-E PD57006S-E RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration ■ POUT = 6W with 15dB gain @ 945MHz / 28V ■ New RF plastic package
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PD57006-E
PD57006S-E
945MHz
PowerSO-10RF
PD57006
PowerSO-10RF.
PD570and
AN1294
PD57006-E
PD57006S
PD57006S-E
PD57006STR-E
PD57006TR-E
PD57006E
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945 TRANSISTOR
Abstract: 700B AN1294 GP413
Text: STAP57030 RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 30 W with 14 dB gain @ 945 MHz / 28 V ■ ST advanced PowerSO-10RF / STAP package
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STAP57030
PowerSO-10RF
STAP57030
945 TRANSISTOR
700B
AN1294
GP413
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SO42
Abstract: STM 160-30 "class AB Linear" hf PD55003 equivalent SD57045 linear amplifier 470-860 LT5232 VHF lna 30 to SD4100 SD2932 linear amplifier
Text: RF Selection Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions RF LDMOS HF to 1000 MHz Class AB Common Source - PowerSO-10RF VHF/UHF Mobile Radio and 900 MHz Cellular Applications P/N PD54003 PD54008 PD55003 PD55008 PD55015 PD55025S PD57002
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PowerSO-10RF
PD54003
PD54008
PD55003
PD55008
PD55015
PD55025S
PD57002
PD57006
PD57018
SO42
STM 160-30
"class AB Linear" hf
PD55003 equivalent
SD57045
linear amplifier 470-860
LT5232
VHF lna 30 to
SD4100
SD2932 linear amplifier
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SC70-5L
Abstract: diode 5L
Text: Specification for release Customer : Ordercode: Description: Package: 82402374 TVS Diode Array WE-TVS SC70-5L DATUM / DATE : 2010-01-27 A Features: B Schematic and Pin Configuration: • ESD Protection for 4 Lines - unidirectional • Provide ESD Protection for each line to
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SC70-5L
5/50ns)
UL94V-0
D-74638
diode 5L
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MRF181
Abstract: 300 uF 450 VDC Mallory Capacitor MRF181SR1
Text: MOTOROLA Order this document by MRF181/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF181SR1 MRF181ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices
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MRF181/D
MRF181SR1
MRF181ZR1
MRF181/D
MRF181
300 uF 450 VDC Mallory Capacitor
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c 945 p equivalent
Abstract: SC70-6L
Text: Specification for release Customer : Ordercode: Description: Package: 82402375 TVS Diode Array WE-TVS SC70-6L DATUM / DATE : 2010-01-27 A Features: B Schematic and Pin Configuration: • ESD Protection for 5 Lines - unidirectional • Provide ESD Protection for each line to
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SC70-6L
5/50ns)
UL94V-0
D-74638
c 945 p equivalent
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TC50025
Abstract: MRF181SR1 motorola 549 diode MRF181ZR1 ARLON-GX-0300-55-22 TC5002 300 uF 450 VDC Mallory Capacitor MRF181
Text: MOTOROLA The RF MOSFET Line MRF181SR1 MRF181ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs LIFETIME BUY Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices
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MRF181SR1
MRF181ZR1
TC50025
MRF181SR1
motorola 549 diode
MRF181ZR1
ARLON-GX-0300-55-22
TC5002
300 uF 450 VDC Mallory Capacitor
MRF181
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capacitor ceramic variable RF
Abstract: variable capacitor 945 TRANSISTOR 700B M243 SD57030 TSD57030 c 945 TRANSISTOR equivalent
Text: SD57030 RF POWER TRANSISTORS The LdmoST FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 30 W WITH 13 dB gain @ 945 MHz • BeO FREE PACKAGE M243 Epoxy Sealed DESCRIPTION
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SD57030
SD57030
TSD57030
capacitor ceramic variable RF
variable capacitor
945 TRANSISTOR
700B
M243
TSD57030
c 945 TRANSISTOR equivalent
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tr array sot23
Abstract: No abstract text available
Text: Specification for release Customer : Ordercode: Description: Package: 82402305 TVS Diode Array WE-TVS SOT23-6L DATUM / DATE : 2010-01-27 A Features: B Schematic and Pin Configuration: • ESD Protection for 5 Lines - unidirectional • Provide ESD Protection for each line to
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OT23-6L
5/50ns)
UL94V-0
D-74638
tr array sot23
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PD85035C
Abstract: 945 TRANSISTOR M243
Text: PD85035C RF power transistor, LdmoST family Features • Excellent thermal stability ■ Common source configuration ■ POUT = 35 W with 14.5 dB gain @ 945 MHz / 13.6 V ■ BeO-free ceramic package ■ ESD protection ■ In compliance with the 2002/95/EC european
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PD85035C
2002/95/EC
PD85035C
ID14138
945 TRANSISTOR
M243
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945 TRANSISTOR
Abstract: JESD97 M243 PD85035C transistor marked 12w
Text: PD85035C RF power transistor - LdmoST family Preliminary Data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 35 W with 14.5 dB gain @ 945 MHz / 13.6 V ■ BeO-free ceramic package ■ ESD protection ■ In compliance with the 2002/95/EC european
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PD85035C
2002/95/EC
PD85035C
945 TRANSISTOR
JESD97
M243
transistor marked 12w
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SD57045
Abstract: 28/BZW06-171 equivalent M243 TSD57045
Text: SD57045 RF POWER TRANSISTORS The LdmoST FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs ν ν ν ν EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 45 W PEP with 13 dB gain @ 945 MHz BeO FREE PACKAGE DESCRIPTION The SD57045 is a common source N-Channel
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SD57045
SD57045
TSD57045
28/BZW06-171 equivalent
M243
TSD57045
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SD57045
Abstract: M250 SD57045-01 TSD57045-01
Text: SD57045-01 RF POWER TRANSISTORS The LdmoST FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs ν ν ν ν EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 45 W PEP with 13 dB gain @ 945 MHz BeO FREE PACKAGE DESCRIPTION The SD57045-01 is a common source N-Channel
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SD57045-01
SD57045-01
TSD57045-01
SD57045
M250
TSD57045-01
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF POWER Field-Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs LIFETIME BUY Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices
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MRF184
MRF184S,
31JUL04
31JAN05
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Untitled
Abstract: No abstract text available
Text: SD57045 RF POWER TRANSISTORS The LdmoST FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • ■ ■ ■ EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 45 W PEP with 13 dB gain @ 945 MHz BeO FREE PACKAGE DESCRIPTION The SD57045 is a common source N-Channel
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SD57045
SD57045
TSD57045
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0843 12L
Abstract: No abstract text available
Text: SD57045-01 RF POWER TRANSISTORS The LdmoST FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • ■ ■ ■ EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 45 W PEP with 13 dB gain @ 945 MHz BeO FREE PACKAGE DESCRIPTION The SD57045-01 is a common source N-Channel
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SD57045-01
SD57045-01
TSD57045-01
0843 12L
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MWE6IC9100N-2 Rev. 6, 10/2011 RF LDMOS Wideband Integrated Power Amplifier The MWE6IC9100N wideband integrated circuit is designed with on-chip matching that makes it usable from 869 to 960 MHz. This multi-stage
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MWE6IC9100N--2
MWE6IC9100N
MWE6IC9100NBR1
MWE6IC9100N--2
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M R029
Abstract: h 945 p
Text: 4 3 RELEASED FOR PUBUCAT10N THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 19 BY AMP INCORPORATED. .19 ALL RIGHTS RESERVED. D 18.00 [457.2] — .079 [2.01] TYP — .154 [3.91] .160 [4.06] —► TYP 0.059 [1.50] .063 [1.60] TYP 4 )-$ — .069 [1.75] 2 PLCS
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PUBUCAT10N
23FEB95
24JUN98
qmp34754
home/qmp34754/robersto
24JUN98
M R029
h 945 p
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M R029
Abstract: R029
Text: THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 19 RELEASED FOR PUBLICATION BY AMP INCORPORATED. .19 ALL RIGHTS RESERVED. DIST AA 53 REVISIONS LTR .154 [3.91] .160 [4.06] TYP .069 [1.75] 2 PLCS —•(£) (j) -(j) j? ' BUS □ -s a RECEPTACLE c 1 / S 1 1 /
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26JUL99
13JUL98
23FEB95
13JUL98
amp34754
M R029
R029
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