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    C-BAND POWER GAAS FET Search Results

    C-BAND POWER GAAS FET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation

    C-BAND POWER GAAS FET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C-Band Power GaAs FET

    Abstract: NEZ3642-4D NEZ3642-8D NEZ4450-4D NEZ4450-8D NEZ5964-4D NEZ5964-8D NEZ6472-4D NEZ7177-4D NEZ7785-4D
    Text: PRELIMINARY DATA SHEET GaAs MES FET 4W/8W C-BAND POWER GaAs FET NEZ Series 4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS unit: mm 0.5±0.1 The NEZ Series of microwave power GaAs FETs offer C1.5 4PLACES GATE 2.5MIN. high output power, high gain and high efficiency at C-band


    Original     		PDF

    nec 2571 4 pin

    Abstract: gl 2576 NEZ7785-15D NEZ3642-15D NEZ4450-15D NEZ5964-15D NEZ6472-15D nez5964-15dd
    Text: PRELIMINARY DATA SHEET GaAs MES FET 15 W C-BAND POWER GaAs FET NEZ SERIES 15 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS unit: mm The NEZ Series of microwave power GaAs FETs offer 0.5 ±0.1 for microwave and satellite communications.


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    MGFC47B3538B

    Abstract: MGFC47B
    Text: <C band Internally Matched Power GaAs FET> MGFC47B3538B 3.5 – 3.8GHz BAND / 50W DESCRIPTION The MGFC47B3538B is an internally impedance-matched GaAs power FET especially designed for use in 3.5 – 3.8 GHz band amplifiers. The hermetically sealed metal-ceramic package


    Original     		PDF MGFC47B3538B MGFC47B3538B 37dBm GF-60 MGFC47B

    Untitled

    Abstract: No abstract text available
    Text: <C band Internally Matched Power GaAs FET> MGFC42V7177 7.1 - 7.7GHz BAND / 16W DESCRIPTION The MGFC42V7177 is an internally impedance-matched GaAs power FET especially designed for use in 7.1 – 7.7 GHz band amplifiers. The hermetically sealed metal-ceramic package


    Original     		PDF MGFC42V7177 MGFC42V7177

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC45B3436B 3.4 – 3.6 GHz BAND / 30W DESCRIPTION The MGFC45B3436B is an internally impedance-matched GaAs power FET especially designed for use in 3.4 – 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFC45B3436B MGFC45B3436B -45dBc 12ohm

    Untitled

    Abstract: No abstract text available
    Text: <C band Internally Matched Power GaAs FET> MGFC42V7177 7.1 - 7.7GHz BAND / 16W DESCRIPTION The MGFC42V7177 is an internally impedance-matched GaAs power FET especially designed for use in 7.1 – 7.7 GHz band amplifiers. The hermetically sealed metal-ceramic package


    Original     		PDF MGFC42V7177 MGFC42V7177

    MGFC47B3436

    Abstract: MGFC47B
    Text: < C band internally matched power GaAs FET > MGFC47B3436 3.4 – 3.6 GHz BAND / 50W DESCRIPTION The MGFC47B3436B is an internally impedance-matched GaAs power FET especially designed for use in 3.4 – 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFC47B3436 MGFC47B3436B 37dBm 10ohm MGFC47B3436 MGFC47B

    Untitled

    Abstract: No abstract text available
    Text: <C band Internally Matched Power GaAs FET> MGFC47B3538B 3.5 – 3.8GHz BAND / 50W DESCRIPTION The MGFC47B3538B is an internally impedance-matched GaAs power FET especially designed for use in 3.5 – 3.8 GHz band amplifiers. The hermetically sealed metal-ceramic package


    Original     		PDF MGFC47B3538B MGFC47B3538B 37dBm GF-60

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC45B3436B 3.4 – 3.6 GHz BAND / 30W DESCRIPTION The MGFC45B3436B is an internally impedance-matched GaAs power FET especially designed for use in 3.4 – 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFC45B3436B MGFC45B3436B -45dBc 12ohm

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC47B3436 3.4 – 3.6 GHz BAND / 50W DESCRIPTION The MGFC47B3436B is an internally impedance-matched GaAs power FET especially designed for use in 3.4 – 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFC47B3436 MGFC47B3436B 37dBm 10ohm

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC36V5258 5.2 – 5.8 GHz BAND / 4W DESCRIPTION OUTLINE DRAWING The MGFC36V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.2 – 5.8 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFC36V5258 MGFC36V5258

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC39V4450A 4.4 – 5.0 GHz BAND / 8W DESCRIPTION OUTLINE DRAWING The MGFC39V4450A is an internally impedance-matched GaAs power FET especially designed for use in 4.4 – 5.0 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFC39V4450A MGFC39V4450A -45dBc 28dBm

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC41V3642 3.6 – 4.2 GHz BAND / 14W OUTLINE DRAWING DESCRIPTION The MGFC41V3642 is an internally impedance-matched GaAs power FET especially designed for use in 3.6 – 4.2 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFC41V3642 MGFC41V3642 -45dBc 30dBm

    MGFC36V3742A

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC36V3742A 3.7 – 4.2 GHz BAND / 4W DESCRIPTION OUTLINE DRAWING The MGFC36V3742A is an internally impedance-matched GaAs power FET especially designed for use in 3.7 – 4.2 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFC36V3742A MGFC36V3742A -45dBc 25dBm

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC36V7177A 7.1 – 7.7 GHz BAND / 4W DESCRIPTION OUTLINE DRAWING The MGFC36V7177A is an internally impedance-matched GaAs power FET especially designed for use in 7.1 – 7.7 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFC36V7177A MGFC36V7177A -45dBc 25dBm

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC38V6472 6.4 – 7.2 GHz BAND / 6W DESCRIPTION OUTLINE DRAWING The MGFC38V6472 is an internally impedance-matched GaAs power FET especially designed for use in 6.4 – 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFC38V6472 MGFC38V6472 -45dBc 27dBm 10ctric

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC41V7177 7.1 – 7.7 GHz BAND / 12W OUTLINE DRAWING DESCRIPTION The MGFC41V7177 is an internally impedance-matched GaAs power FET especially designed for use in 7.1 – 7.7 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFC41V7177 MGFC41V7177 -45dBc 30dBm

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC42V3742 3.7 – 4.2 GHz BAND / 16W OUTLINE DRAWING DESCRIPTION The MGFC42V3742 is an internally impedance-matched GaAs power FET especially designed for use in 3.7 – 4.2 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFC42V3742 MGFC42V3742 -45dBc 31dBm

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC40V5258 5.2 - 5.8 GHz BAND / 10W OUTLINE DRAWING DESCRIPTION The MGFC40V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.2 – 5.8 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFC40V5258 MGFC40V5258

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC39V3436 3.4 – 3.6 GHz BAND / 8W DESCRIPTION OUTLINE DRAWING The MGFC39V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 – 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFC39V3436 MGFC39V3436 -45dBc 28dBm

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC36V7785A 7.7 – 8.5 GHz BAND / 4W DESCRIPTION OUTLINE DRAWING The MGFC36V7785A is an internally impedance-matched GaAs power FET especially designed for use in 7.7 – 8.5 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFC36V7785A MGFC36V7785A -45dBc 25dBm

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET GaAs MES FET 4W/8W C-BAND POWER GaAs FET NEZ Series 4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS unit: mm The NEZ Series of microwave power GaAs FETs offer high output power, high gain and high efficiency at C-band


    OCR Scan     		PDF NEZ3642-4D, NEZ4450-4D, NEZ5964ter

    nec 2571

    Abstract: nec 2571 4 pin NEC 1357 ez 946 k 3918 fet IMS 3630
    Text: PRELIMINARY DATA SHEET GaAs MES FET 15 W C-BAND POWER GaAs FET NEZ SERIES 15 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION P A C K A G E D IM EN SIO N S unit: mm The N EZ Series of microwave power GaAs FE T s offer 0.5 +0.1 high output power, high gain and high efficiency at C-band


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET GaAs MES FET 4W/8W C-BAND POWER GaAs FET NEZ Series 4W/8W C-BAND POWER G aAs FET N-CHANNEL G aAs MES FET DESCRIPTION PACKAGE DIMENSIONS unit: mm The N EZ Series of microwave power G aAs FET s offer high output power, high gain and high efficiency at C-band


    OCR Scan     		PDF NEZ3642-4D,