Untitled
Abstract: No abstract text available
Text: FSX027X GaAs FET & HEMT Chips FEATURES • Medium Power Output: P1dB=24.5dBm Typ. @8.0GHz • High Power Gain: G1dB=10dB(Typ.)@8.0GHz • Proven Reliability DRAIN DESCRIPTION The FSX027X is a general purpose GaAs FET designed for medium power applications up to 12GHz. These devices have a wide dynamic
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FSX027X
FSX027X
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GaAs FET HEMT Chips
Abstract: 12GHz 8GHz oscillator FSX017X fsx017
Text: FSX017X GaAs FET & HEMT Chips FEATURES • Medium Power Output: P1dB=21.5dBm Typ. @8.0GHz • High Power Gain: G1dB=11dB(Typ.)@8.0GHz • Proven Reliability Drain DESCRIPTION Source The FSX017X is a general purpose GaAs FET designed for medium power applications up to 12GHz. These devices have a wide dynamic
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FSX017X
FSX017X
12GHz.
GaAs FET HEMT Chips
12GHz
8GHz oscillator
fsx017
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FSX017X
Abstract: No abstract text available
Text: FSX017X GaAs FET & HEMT Chips FEATURES • Medium Power Output: P1dB=21.5dBm Typ. @8.0GHz • High Power Gain: G1dB=11dB(Typ.)@8.0GHz • Proven Reliability Drain DESCRIPTION Source The FSX017X is a general purpose GaAs FET designed for medium power applications up to 12GHz. These devices have a wide dynamic
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FSX017X
FSX017X
12GHz.
FCSI0598M200
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GaAs FET HEMT Chips
Abstract: NF 841 12GHz FSX027X
Text: FSX027X GaAs FET & HEMT Chips FEATURES • Medium Power Output: P1dB=24.5dBm Typ. @8.0GHz • High Power Gain: G1dB=10dB(Typ.)@8.0GHz • Proven Reliability DRAIN DESCRIPTION The FSX027X is a general purpose GaAs FET designed for medium power applications up to 12GHz. These devices have a wide dynamic
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FSX027X
FSX027X
12GHz.
GaAs FET HEMT Chips
NF 841
12GHz
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Untitled
Abstract: No abstract text available
Text: FSX017X GaAs FET & HEMT Chips FEATURES • Medium Power Output: P1dB=21.5dBm Typ. @8.0GHz • High Power Gain: G1dB=11dB(Typ.)@8.0GHz • Proven Reliability Drain DESCRIPTION Source The FSX017X is a general purpose GaAs FET designed for medium power applications up to 12GHz. These devices have a wide dynamic
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FSX017X
FSX017X
12GHz.
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GaAs FET HEMT Chips
Abstract: NF 841 FSX027X
Text: FSX027X GaAs FET & HEMT Chips FEATURES • Medium Power Output: P1dB=24.5dBm Typ. @8.0GHz • High Power Gain: G1dB=10dB(Typ.)@8.0GHz • Proven Reliability DRAIN DESCRIPTION The FSX027X is a general purpose GaAs FET designed for medium power applications up to 12GHz. These devices have a wide dynamic
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FSX027X
FSX027X
12GHz.
FCSI0598M200
GaAs FET HEMT Chips
NF 841
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GaAs FET HEMT Chips
Abstract: No abstract text available
Text: FSX027X GaAs FET & HEMT Chips FEATURES • Medium Power Output: P1dB=24.5dBm Typ. @8.0GHz • High Power Gain: G1dB=10dB(Typ.)@8.0GHz • Proven Reliability DRAIN DESCRIPTION The FSX027X is a general purpose GaAs FET designed for medium power applications up to 12GHz. These devices have a wide dynamic
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FSX027X
FSX027X
12GHz.
-65afety,
FCSI0598M200
GaAs FET HEMT Chips
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FSX017X
Abstract: fujitsu hemt GaAs FET HEMT Chips
Text: FSX017X GaAs FET & HEMT Chips FEATURES • Medium Power Output: P1dB=21.5dBm Typ. @8.0GHz • High Power Gain: G1dB=11dB(Typ.)@8.0GHz • Proven Reliability Drain DESCRIPTION Source The FSX017X is a general purpose GaAs FET designed for medium power applications up to 12GHz. These devices have a wide dynamic
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FSX017X
FSX017X
12GHz.
FCSI0598M200
fujitsu hemt
GaAs FET HEMT Chips
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Untitled
Abstract: No abstract text available
Text: FSX027X GaAs FET & HEMT Chips FEATURES • Medium Power Output: P1dB=24.5dBm Typ. @8.0GHz • High Power Gain: G1dB=10dB(Typ.)@8.0GHz • Proven Reliability DRAIN DESCRIPTION The FSX027X is a general purpose GaAs FET designed for medium power applications up to 12GHz. These devices have a wide dynamic
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FSX027X
FSX027X
12GHz.
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fujitsu hemt
Abstract: No abstract text available
Text: FSX017X GaAs FET & HEMT Chips FEATURES • Medium Power Output: P1dB=21.5dBm Typ. @8.0GHz • High Power Gain: G1dB=11dB(Typ.)@8.0GHz • Proven Reliability Drain DESCRIPTION Source The FSX017X is a general purpose GaAs FET designed for medium power applications up to 12GHz. These devices have a wide dynamic
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FSX017X
FSX017X
12GHz.
fujitsu hemt
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FSX017X
Abstract: No abstract text available
Text: FSX017X GaAs FET & HEMT Chips FEATURES • Medium Power Output: P1dB=21.5dBm Typ. @8.0GHz • High Power Gain: G1dB=11dB(Typ.)@8.0GHz • Proven Reliability Drain DESCRIPTION Source The FSX017X is a general purpose GaAs FET designed for medium power applications up to 12GHz. These devices have a wide dynamic
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FSX017X
FSX017X
12GHz.
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7400A
Abstract: C-Band Power GaAs FET HEMT Chips electrostatic precipitator TIM6472-8 GAAS FET AMPLIFIER x-band 10w TPM2323-30 TIM5053-30L TPM1617 M7179 TPM1617-16
Text: TOSHIBA MICROWAVE POWER GaAs FET APPLICATION NOTES Recommended Assembly Methods for GaAs FET and HEMT Chip Form In assembling the GaAs FET and HEMT chips onto the microstrip circuits, the following die attaching and wire bonding methods are recommended. Precautions
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K 1358 fet transistor
Abstract: FET K 1358 MGFC4419G C 4804 transistor MGFC4419 GaAs FET HEMT Chips GaAs FET chip 581
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC4419G PRELIMINARY Notice : This is not a final specification Some parametric limits are subject to change. InGaAs HEMT Chip DESCRIPTION OUTLINE DRAWING The MGFC4419G low-noise HEMT High electron Mobility Transistor is designed for use in X to K band amplifiers.
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MGFC4419G
MGFC4419G
12GHz
K 1358 fet transistor
FET K 1358
C 4804 transistor
MGFC4419
GaAs FET HEMT Chips
GaAs FET chip 581
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zxnb4200
Abstract: zxnb ZLPM3315 zabg6001 zxnb 4200 lnb c-band RF gain stages ZLNB254 ZXNB4200JB16 twin lnb ZXHF5000
Text: APPLICATION FOCUS Direct Broadcast by Satellite 1 Meeting the challenges of DBS The Direct Broadcast by Satellite DBS market presents system developers with a number of quite specific challenges. High levels of analog device integration can help support the efforts to produce cost-effective, high
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2002/95/EC)
zxnb4200
zxnb
ZLPM3315
zabg6001
zxnb 4200
lnb c-band RF gain stages
ZLNB254
ZXNB4200JB16
twin lnb
ZXHF5000
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MESFET Application
Abstract: hitachi mosfet power amplifier audio application 2sk2685 spice 00E-12 hitachi mosfet audio application note Hitachi audio mosfet application booster gsm antenna hitachi discrete circuit diagram wireless video transmitter and re 2SK239A
Text: C 1998 Dirk Plha HITACHI Hitachi Discrete Devices for Wireless and Tuner Applications HITACHI DISCRETE DEVICES FOR WIRELESS & TUNER APPLICATIONS C 1998 Dirk Plha HITACHI Hitachi Discrete Devices for Wireless and Tuner Applications PRODUCT LINE-UP BY APPLICATION:
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49E-13
00E-01
00E-06
44E-13
HVC133
30E-12
27E-15
HVM132WK
MESFET Application
hitachi mosfet power amplifier audio application
2sk2685 spice
00E-12
hitachi mosfet audio application note
Hitachi audio mosfet application
booster gsm antenna
hitachi discrete
circuit diagram wireless video transmitter and re
2SK239A
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FMCW Radar
Abstract: radar 77 ghz sige radar 77 ghz receiver mesfet lnb FETs working 60Ghz infineon FMCW 77 ghz FMCW radar gunn diode Gunn Diode GaAs Gunn Diode "94 GHz"
Text: INFINEON TECHNOLOGIES AG’S SALES OFFICES WORLDWIDE – P A R T LY R E P R E S E N T E D B Y S I E M E N S A G AUS Siemens Ltd. 885 Mountain Highway Bayswater, Victoria 3153 T +61 3-97 21 2 1 11 Fax (+61) 3-97 21 72 75 BR Infineon Technologies South America Ltda.
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3800-Pirituba
E-28760
DK-2750
FMCW Radar
radar 77 ghz sige
radar 77 ghz receiver
mesfet lnb
FETs working 60Ghz
infineon FMCW
77 ghz FMCW
radar gunn diode
Gunn Diode
GaAs Gunn Diode "94 GHz"
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fujitsu hemt
Abstract: fujitsu gaas fet FSX017X GaAs FET HEMT Chips
Text: FSX017X GaAs FET & HEMT Chips FEATURES • Medium Power Output: PidB=21.5dBm Typ. @8.0GHz • High Power Gain: G-|dB=11dB(Typ.)@8.0GHz • Proven Reliability DESCRIPTION The FSX017X is a general purpose GaAs FET designed for medium power applications up to 12GHz. These devices have a wide dynamic
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FSX017X
FSX017X
12GHz.
FCSI0598M200
fujitsu hemt
fujitsu gaas fet
GaAs FET HEMT Chips
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12QHz
Abstract: FSX027X GaAs FET HEMT Chips fujitsu gaas fet
Text: FSX027X - GaAs FET & HEMT Chips FEATURES • Medium Power Output: P-|dB=24.5dBm Typ. @8.0GHz • High Power Gain: GidB=10dB(Typ.)@ 8.0GHz • Proven Reliability DESCRIPTION The FSX027X is a general purpose GaAs FET designed for medium
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FSX027X
FSX027X
12GHz.
FCSI0598M200
12QHz
GaAs FET HEMT Chips
fujitsu gaas fet
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fet transistor a03
Abstract: MGFC4419
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC4419G InGaAs HEMT DESCRIPTION The MGFC4419G low-noise HEMT High Electron Mobility Transistor is designed for use in X to K band amplifiers. OUTLINE DRAWING FEATURES • Low noise figure NFmin. = 0.50dB (MAX.) • High associated gain
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MGFC4419G
MGFC4419G
12GHz
fet transistor a03
MGFC4419
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GaAs FET HEMT Chips
Abstract: on 5295 transistor MGFC4453A transistor on 4436 InGaAs HEMT mitsubishi low noise x band hemt transistor fet transistor a03 FET Spec sheet transistor on 5295 5458 transistor
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC4453A InGaAs HEMT DESCRIPTION The M G FC4453A low-noise HEMT High Electron Mobility OUTLINE DRAWING Transistor is designed for use in X to K band amplifiers. Unit : u m FEATURES Low noise figure @ f=12GHz NFmin. = 0.40dB (TYP.)
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MGFC4453A
MGFC4453A
12GHz
25pcs
GaAs FET HEMT Chips
on 5295 transistor
transistor on 4436
InGaAs HEMT mitsubishi
low noise x band hemt transistor
fet transistor a03
FET Spec sheet
transistor on 5295
5458 transistor
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CF001-03
Abstract: CF001 GaAs FET HEMT Chips CF001-01 CF001-02 celeritek ghz CFB001
Text: CF001 Series GaAs Pseudomorphic HEMT and MESFET Chips □ Super Low Noise: 0.8 dB at 12 GHz □ High Gain: Usable to 44 GHz □ P idB P°wer: U p t0 +19 dBm □ Active Layers Include: Pseudomorphic HEMT, Epitaxial and Ion Implanted □ Wafer Qualification Procedure
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CF001
CF001-01.
CF001-02
CF001-03
GaAs FET HEMT Chips
CF001-01
celeritek ghz
CFB001
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CD 294
Abstract: FLL357 348dB FLL400IP-2 FLK102MH-14 hemt low noise die Fujitsu GaAs FET Amplifier FLK017XP FLL120 fujitsu gaas fet
Text: FLC167WF - C-Band Power GaAs FET FEATURES • • • • • High O utput Power: P-|<jB = 3 1 .8dBm Typ. High Gain: G ^ b = 7.5dB(Typ.) High PAE: r iadd = 35% (Typ.) Proven Reliability Herm etic M etal/C eram ic Package
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FLC167WF
FLC167WF
FCSI0598M200
CD 294
FLL357
348dB
FLL400IP-2
FLK102MH-14
hemt low noise die
Fujitsu GaAs FET Amplifier
FLK017XP
FLL120
fujitsu gaas fet
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2SK676
Abstract: GaAs FET HEMT Chips
Text: 2SK676H5 SONY AIGaAs/GaAs Low Noise Microwave HEMT CHIP Description Chip outline Unit: jum The 2SK 676H 5 is an AIGaAs/GaAs HEMT chip fabricated by MOCVD Metal Organic Chemical Vapor Deposition . This 0.5 micron gate FET features very low noise figure and high
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2SK676H5
2SK676H
2SK676
GaAs FET HEMT Chips
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sony 0642
Abstract: No abstract text available
Text: SONY CORP/COMPONENT PRODS 4TE D 0302303 0003150 3 2SK677H5 SONY, AIGaAs/GaAs Low Noise Microwave HEMT CHIP Unit: ju.m Chip outline Description The 2SK677H5 is an AIGaAs/GaAs HEMT chip fabricated by MOCVD Metal Organic Chemical Vapor Deposition . This 0.5 micron
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2SK677H5
2SK677H5
D0G312b
sony 0642
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