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    C08BL242X Price and Stock

    Novacap C08BL242X-5UN-X0B

    CAP CER 2400PF 50V 0805
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    DigiKey C08BL242X-5UN-X0B Bulk 6,720 1
    • 1 $3.18
    • 10 $2.089
    • 100 $1.5095
    • 1000 $1.20062
    • 10000 $1.07485
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    Novacap C08BL242X-5ZN-X0T

    CAP CER 2400PF 50V 0805
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    DigiKey C08BL242X-5ZN-X0T Cut Tape 4,370 1
    • 1 $3.22
    • 10 $2.116
    • 100 $1.5299
    • 1000 $1.5299
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    C08BL242X-5ZN-X0T Digi-Reel 4,370 1
    • 1 $3.22
    • 10 $2.116
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    C08BL242X-5ZN-X0T Reel 4,000 500
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    • 10000 $1.08987
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    Novacap C08BL242X-5ZN-X0B

    CAP CER 2400PF 50V 0805
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    DigiKey C08BL242X-5ZN-X0B Bulk 2,151 1
    • 1 $3.98
    • 10 $2.65
    • 100 $1.9417
    • 1000 $1.56389
    • 10000 $1.41
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    Novacap C08BL242X-5UN-X0T

    CAP CER 2400PF 50V 0805
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey C08BL242X-5UN-X0T Reel 5,000
    • 1 -
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    • 10000 $1.11411
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    Novacap C08BL242X-5SN-X0T

    CAP CER 0805
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    DigiKey C08BL242X-5SN-X0T Reel
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    C08BL242X Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    C08BL242X-5SN-X0T Knowles Dielectric Labs Capacitors - Ceramic Capacitors - CAP CER 0805 Original PDF
    C08BL242X-5UN-X0B Knowles Dielectric Labs Capacitors - Ceramic Capacitors - CAP CER 2400PF 50V 0805 Original PDF
    C08BL242X-5UN-X0T Knowles Dielectric Labs Capacitors - Ceramic Capacitors - CAP CER 2400PF 50V 0805 Original PDF
    C08BL242X-5ZN-X0B Knowles Dielectric Labs Capacitors - Ceramic Capacitors - CAP CER 2400PF 50V 0805 Original PDF
    C08BL242X-5ZN-X0T Knowles Dielectric Labs Capacitors - Ceramic Capacitors - CAP CER 2400PF 50V 0805 Original PDF

    C08BL242X Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TGF2819-FL 100W Peak Power, 20W Average Power, 32V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers


    Original     		PDF TGF2819-FL TGF2819-FL

    Untitled

    Abstract: No abstract text available
    Text: T1G4012036-FS 120W Peak Power, 24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers


    Original     		PDF T1G4012036-FS T1G4012036-FS

    transistor 1800MHz

    Abstract: r.f. amplifier 30mhz
    Text: RF3826 RF3826 30MHz to 2500MHz, 9W GaN Wideband Power Amplifier 30MHz TO 2500MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology


    Original     		PDF RF3826 30MHz 2500MHz, 2500MHz 2500MHz) transistor 1800MHz r.f. amplifier 30mhz

    rf3826

    Abstract: ERJ-3GEYJ821 ERJ-3GEYJ391 transistor 1800MHz
    Text: RF3826 RF3826 30MHz to 2500MHz, 9W GaN Wideband Power Amplifier 30MHz TO 2500MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology


    Original     		PDF RF3826 30MHz 2500MHz, RF3826 2500MHz 2500MHz) ERJ-3GEYJ821 ERJ-3GEYJ391 transistor 1800MHz

    RFHA1000

    Abstract: No abstract text available
    Text: RFHA1000 RFHA1000 50MHz to 1000MHz, 15W GaN Wideband Power Amplifier 50MHz TO 1000MHz, 15W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 15W  Advanced Heat-Sink Technology


    Original     		PDF RFHA1000 50MHz 1000MHz, RFHA1000 1000MHz DS121114

    Untitled

    Abstract: No abstract text available
    Text: RFHA1003 RFHA1003 30MHz to 512MHz, 9W GaN Wideband Power Amplifier 30MHz TO 512MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology


    Original     		PDF RFHA1003 30MHz 512MHz, RFHA1003 512MHz DS120216

    404j

    Abstract: rf3826 transistor 1800MHz 100A0R9BT150X
    Text: RF3826 RF3826 30MHz to 2500MHz, 9W GaN Wideband Power Amplifier 30MHz TO 2500MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology


    Original     		PDF RF3826 30MHz 2500MHz, RF3826 2500MHz 2500MHz) 404j transistor 1800MHz 100A0R9BT150X

    Untitled

    Abstract: No abstract text available
    Text: TGF3015-SM 10W, 32V, 0.03 – 3 GHz, GaN RF Input-Matched Transistor Applications • • • • • • Military radar Civilian radar Land mobile and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features


    Original     		PDF TGF3015-SM TGF3015-SM

    Untitled

    Abstract: No abstract text available
    Text: T2G4005528-FS 55W, 28V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features


    Original     		PDF T2G4005528-FS T2G4005528-FS TQGaN25

    Untitled

    Abstract: No abstract text available
    Text: T1G2028536-FL 285W, 36V DC – 2 GHz, GaN RF Power Transistor Applications • • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers GPS Communications Avionics


    Original     		PDF T1G2028536-FL T1G2028536-FL TQGaN25HV

    Untitled

    Abstract: No abstract text available
    Text: T2G4005528-FS 55W, 28V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features


    Original     		PDF T2G4005528-FS T2G4005528-FS

    Untitled

    Abstract: No abstract text available
    Text: T1G2028536-FS 285W, 36V DC – 2 GHz, GaN RF Power Transistor Applications • • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers GPS Communications Avionics


    Original     		PDF T1G2028536-FS T1G2028536-FS TQGaN25HV

    Untitled

    Abstract: No abstract text available
    Text: T2G4003532-FL 30W, 32V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features


    Original     		PDF T2G4003532-FL T2G4003532-FL TQGaN25

    T2G405528-FSEVB2

    Abstract: No abstract text available
    Text: T2G4005528-FS 55W, 28V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features


    Original     		PDF T2G4005528-FS T2G4005528-FS TQGaN25 T2G405528-FSEVB2

    panasonic inverter dv 707 manual

    Abstract: 018T A423 Mosfet FTR 03-E Arcotronics 1.27.6 nsl 7053 mkp DX 3500 manual Honeywell DBM 01A Polyester capacitors 823k 250V SPRAGUE powerlytic 36Dx sprague 68D
    Text: PASSIVE COMPONENTS Resistors Networks and Arrays Bourns. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 590, 591, 592 Caddock . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 593 CTS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 594


    Original     		PDF

    RFHA1006

    Abstract: 0906-4K LQG11A47NJ00
    Text: RFHA1006 RFHA1006 225MHz to 1215MHz, 9W GaN Wideband Power Amplifier 225MHz TO 1215MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology


    Original     		PDF RFHA1006 225MHz 1215MHz, RFHA1006 1215MHz DS120418 0906-4K LQG11A47NJ00

    EC 401 TRANSISTOR

    Abstract: Gan hemt transistor RFMD transistor 1800MHz
    Text: RF3826 RF3826 30MHz to 2500MHz, 9W GaN Wideband Power Amplifier 30MHz TO 2500MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology


    Original     		PDF RF3826 30MHz 2500MHz, RF3826 2500MHz 2500MHz) EC 401 TRANSISTOR Gan hemt transistor RFMD transistor 1800MHz

    Untitled

    Abstract: No abstract text available
    Text: NPA1006 Gallium Nitride 28V, 15W, 20-1000 MHz Amplifier Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features •     Broadband operation from 20-1000 MHz 28V Operation Input matched to 50 ohms Industry Standard DFN Plastic Package


    Original     		PDF NPA1006 NPA1006 NDS-039

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY RFHA3832 RFHA3832 10W GaN Wide-Band Power Amplifier The RFHA3832 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two way radios and general purpose amplification. Using an advanced high power density


    Original     		PDF RFHA3832 RFHA3832 DS131205

    1812C105KAT2A

    Abstract: No abstract text available
    Text: T1G6000528-Q3 7W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • Wideband and narrowband defense and commercial communication systems – General Purpose RF Power – Jammers – Radar – Professional radio systems – WiMAX – Wideband ampliiers


    Original     		PDF T1G6000528-Q3 T1G6000528-Q3 1812C105KAT2A

    transistor d90 smd

    Abstract: Type NS ceramic cap MIL-PRF-49464 F25CG0R2M1PX3 G10XXKITAPX05 bd-bj gap capacitors N220 P105 C11AH
    Text: Company Overview Dielectric Laboratories, Inc. DLI is your global partner for application specific microwave and millimeter wave components serving customers in fiber optic, wireless, medical, transportation, semiconductor, space, avionics and military markets. With over 35 years of


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: T1G4005528-FS 55W, 28V, DC – 3.5GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Avionics Wideband or narrowband amplifiers Product Features


    Original     		PDF T1G4005528-FS T1G4005528-FS

    CMPA2560025F

    Abstract: 920pF
    Text: CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA2560025F CMPA2560025F CMPA25 60025F 920pF

    RFHA1003S2

    Abstract: No abstract text available
    Text: RFHA1003 RFHA1003 30MHz to 512MHz, 9W GaN Wideband Power Amplifier 30MHz TO 512MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology


    Original     		PDF RFHA1003 30MHz 512MHz, RFHA1003 512MHz DS121114 RFHA1003S2