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    C1 SOT23 Search Results

    C1 SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    ISL54103IHZ-T7A Renesas Electronics Corporation DDC Accelerator (DDCA), SOT23, /Reel Visit Renesas Electronics Corporation
    EL6204CWZ-T7A Renesas Electronics Corporation Laser Driver Oscillator, SOT23, /Reel Visit Renesas Electronics Corporation
    ISL54103IHZ-T7 Renesas Electronics Corporation DDC Accelerator (DDCA), SOT23, /Reel Visit Renesas Electronics Corporation
    ISL21070CIH320Z-TK Renesas Electronics Corporation 25µA Micropower Voltage References, SOT23, /Reel Visit Renesas Electronics Corporation

    C1 SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IC 7403

    Abstract: MMPQ2222 PZT2222A SOIC-16 MMBT2222A NMT2222 PN2222A
    Text: MMBT2222A PZT2222A C C E E C B C TO-92 SOT-23 E B B SOT-223 Mark: 1P MMPQ2222 E1 B1 SOIC-16 E2 B2 E3 B3 E4 NMT2222 B4 C2 E1 C1 pin #1 C1 C2 C1 C3 C2 C4 C4 C3 B2 E2 SOT-6 B1 Mark: .1B NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch


    Original     		PDF MMBT2222A PZT2222A OT-23 OT-223 MMPQ2222 SOIC-16 NMT2222 IC 7403 MMPQ2222 PZT2222A SOIC-16 MMBT2222A NMT2222 PN2222A

    BV03C

    Abstract: DVR RXD1
    Text: Application Note 1804 SLOC TW3801-C1, TW3811- C1 Application Note 1 AN1804.0 November 27, 2012 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 1-888-468-3774 | Copyright Intersil Americas Inc. 2012. All Rights Reserved


    Original     		PDF TW3801-C1, TW3811- AN1804 1-888-INTERSIL OpeW3811 TW3811 BV03C DVR RXD1

    SMV1236-004LF

    Abstract: marking AF SMV1232 SMV1232-004 SMV1232-011 SMV1232-074 SMV1232-079 SMV1233-079 SMV1237 SMV1234-079LF
    Text: DATA SHEET SMV1232–SMV1237: Hyperabrupt Tuning Varactors Features High capacitance ratio, C1 V/C3 V = 1.8, C1 V/C6 V = 3.1 Low series resistance for low phase noise ● Multiple packages SOT-23, SOD-323, SC-70 and SC-79 ● Designed for high volume commercial applications


    Original     		PDF SMV1232 SMV1237: OT-23, OD-323, SC-70 SC-79 SMV1237 SMV1236-004LF marking AF SMV1232-004 SMV1232-011 SMV1232-074 SMV1232-079 SMV1233-079 SMV1234-079LF

    SMV1232

    Abstract: SMV1232-011 SMV1232-079 SMV1233-079 SMV1234-079 SMV1235-079 SMV1236-079 SMV1237
    Text: Hyperabrupt Tuning Varactors SMV1232–SMV1237 Features • High Capacitance Ratio, C1 V/C3 V = 1.8, C1 V/C6 V = 3.1 ■ Low Series Resistance for Low Phase Noise ■ Multiple Packages SOT-23, SOD-323, SC-70 and SC-79 ■ Designed for High Volume Commercial


    Original     		PDF SMV1232 SMV1237 OT-23, OD-323, SC-70 SC-79 SMV1237 SMV1232-011 SMV1232-079 SMV1233-079 SMV1234-079 SMV1235-079 SMV1236-079

    SMV1232

    Abstract: smv1234-001 SMV1237 SMV1233-079
    Text: Hyperabrupt Tuning Varactors SMV1232–SMV1237 Features • High Capacitance Ratio, C1 V/C3 V = 1.8, C1 V/C6 V = 3.1 ■ Low Series Resistance for Low Phase Noise ■ Multiple Packages SOT-23, SOD-323, SC-70 and SC-79 ■ Designed for High Volume Commercial


    Original     		PDF SMV1232 SMV1237 OT-23, OD-323, SC-70 SC-79 SMV1237 smv1234-001 SMV1233-079

    SMV1232

    Abstract: smv1234-001 varactor diode SPICE model SMV1233-079 smv1236-011 SMV1235-011 SMV1232-011 SMV1232-079 SMV1234-079 SMV1235-079
    Text: Hyperabrupt Tuning Varactors SMV1232–SMV1237 Features • High Capacitance Ratio, C1 V/C3 V = 1.8, C1 V/C6 V = 3.1 ■ Low Series Resistance for Low Phase Noise ■ Multiple Packages SOT-23, SOD-323, SC-70 and SC-79 ■ Designed for High Volume Commercial


    Original     		PDF SMV1232 SMV1237 OT-23, OD-323, SC-70 SC-79 SMV1237 smv1234-001 varactor diode SPICE model SMV1233-079 smv1236-011 SMV1235-011 SMV1232-011 SMV1232-079 SMV1234-079 SMV1235-079

    BCW29

    Abstract: 1C11
    Text: SEMICONDUCTOR BCW29 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 C1 1 2 Item Marking Description Device Mark C1 BCW29 hFE Grade - - * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method


    Original     		PDF BCW29 OT-23 BCW29 1C11

    MMPQ2907

    Abstract: SOIC-16
    Text: MMPQ2907 MMPQ2907 E1 B1 E2 B2 E3 B3 E4 SOIC-16 pin #1 C1 B4 C2 C1 C3 C2 C4 C4 C3 PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. Absolute Maximum Ratings*


    Original     		PDF MMPQ2907 SOIC-16 MMPQ2907 SOIC-16

    CBVK741B019

    Abstract: F63TNR L86Z MMPQ2907 NDM3000 NDM3001 SOIC-16
    Text: MMPQ2907 MMPQ2907 E1 B1 E2 B2 E3 B3 E4 SOIC-16 pin #1 C1 B4 C2 C1 C3 C2 C4 C4 C3 PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. Absolute Maximum Ratings*


    Original     		PDF MMPQ2907 SOIC-16 CBVK741B019 F63TNR L86Z MMPQ2907 NDM3000 NDM3001 SOIC-16

    Untitled

    Abstract: No abstract text available
    Text: MMPQ2907 MMPQ2907 E1 B1 E2 B2 E3 B3 E4 SOIC-16 pin #1 C1 B4 C2 C1 C3 C2 C4 C4 C3 PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. Absolute Maximum Ratings*


    Original     		PDF MMPQ2907 SOIC-16

    L50RIO

    Abstract: 37GL53010-C1 L53II revC1 rqw200n03 L50RI0 ITE8512E L53II L53IIX bd n49 ao4468
    Text: 5 Model : L53II0 4 3 2 1 PCB P/N:37GL53010-C1 PCBA P/N:82GL53010-C1 D D Intel Merom CPU + 965GM + ICH8-M Chipset C B A PG01 PG02 PG03 PG04 PG05 PG06 PG07 PG08 PG09 PG10 PG11 PG12 PG13 PG14 PG15 PG16 PG17 PG18 PG19 PG20 PG21 PG22 PG23 PG24 PG25 PG26 PG27 PG28


    Original     		PDF L53II0 37GL53010-C1 82GL53010-C1 965GM 9LPRS365 GL827 RTL25) PJP35 PJP36 PC258 L50RIO L53II revC1 rqw200n03 L50RI0 ITE8512E L53II L53IIX bd n49 ao4468

    ITE8512E

    Abstract: rqw200n03 L50RIO 37GL53010-C1 L53II revC1 ITE8512 L50RI0 FP6137B IT8512E L53II
    Text: 5 Model : L53II0 4 3 2 1 PCB P/N:37GL53010-C1 PCBA P/N:82GL53110-C1 SMSC D D Intel Merom CPU + 965GM + ICH8-M Chipset C B A PG01 PG02 PG03 PG04 PG05 PG06 PG07 PG08 PG09 PG10 PG11 PG12 PG13 PG14 PG15 PG16 PG17 PG18 PG19 INDEX SYSTEM BLOCK DIAGRAM POWER DIAGRAM & SEQUENCE


    Original     		PDF L53II0 37GL53010-C1 82GL53110-C1 965GM 9LPRS365 GL827 PJP35 PJP36 PC258 max8744 ITE8512E rqw200n03 L50RIO L53II revC1 ITE8512 L50RI0 FP6137B IT8512E L53II

    TO253

    Abstract: transistor k 790 PLCC-20
    Text: Package Information Tape and Reel Option for TSSOP, 8-Pin F BB BB E ØJ AA B H A C1 C ØK D G AA L M M1 L2 ØM L1 QL SECTION BB Siliconix 24-Sep-96 SECTION AA Dim A B C C1 D E F G H ØJ ØK L L1 L2 QL M M1 ØM Millimeters Min Max 15.70 16.30 1.65 1.85 3.50


    Original     		PDF 24-Sep-96 O-237 O-236 OT-23) O-253 OT-143) TO253 transistor k 790 PLCC-20

    TO253

    Abstract: PLCC-20 1307 TRANSISTOR TO-253 SILICONIX
    Text: Package Information Tape and Reel Option for TSSOP, 8-Pin F BB BB E ØJ AA B H A C1 C ØK D G AA L M M1 L2 ØM L1 QL SECTION BB Siliconix 24-Sep-96 SECTION AA Dim A B C C1 D E F G H ØJ ØK L L1 L2 QL M M1 ØM Millimeters Min Max 15.70 16.30 1.65 1.85 3.50


    Original     		PDF 24-Sep-96 O-237 O-236 OT-23) O-253 OT-143) TO253 PLCC-20 1307 TRANSISTOR TO-253 SILICONIX

    BCW29R

    Abstract: BCW29 BCW30R BCW30 MV SOT23 PARTMARKING MV BCW31 BCW32 720 sot23 DSA003672
    Text: SOT23 PNP SILICON PLANAR SMALL SIGNAL TRANSISTORS BCW29 BCW30 ISSUE 3 - JULY 1995 PARTMARKING DETAILS – BCW29 - C1 BCW30 - C2 BCW29R - C4 BCW30R - C5 E C B COMPLEMENTARY TYPES – BCW29 - BCW31 BCW30 - BCW32 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL


    Original     		PDF BCW29 BCW30 BCW29 BCW30 BCW29R BCW30R BCW31 BCW32 MV SOT23 PARTMARKING MV BCW31 BCW32 720 sot23 DSA003672

    Untitled

    Abstract: No abstract text available
    Text: SMBD7000/ MMBD7000 Silicon Switching Diode Array 3  For high-speed switching applications  Connected in series 2 1 VPS05161 3 1 2 EHA07005 Type Marking SMBD7000/ MMBD7000 s5C 1 = A1 Pin Configuration 2 = C2 3=C1/A2 Package SOT23 Maximum Ratings Parameter


    Original     		PDF SMBD7000/ MMBD7000 VPS05161 EHA07005 MMBD7000 EHB00137 EHB00138 Feb-18-2002

    BAV70

    Abstract: No abstract text available
    Text: BAV70 Silicon Switching Diode Array 3  For high-speed switching applications  Common cathode 2 1 VPS05161 3 1 2 EHA07004 Type Marking BAV70 A4s Pin Configuration 1 = A1 2 = A2 Package 3 = C1/2 SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage


    Original     		PDF BAV70 VPS05161 EHA07004 EHB00066 EHB00067 Jul-31-2001 EHB00068 BAV70

    BAV99

    Abstract: free pdf transistor a7s bav99 marking diode bav A2 SOT23
    Text: BAV99 Silicon Switching Diode Array 3  For high-speed switching applications  Connected in series 2 1 VPS05161 3 1 2 EHA07005 Type Marking BAV99 A7s Pin Configuration 1 = A1 2 = C2 Package 3=C1/A2 SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage


    Original     		PDF BAV99 VPS05161 EHA07005 EHB00076 EHB00077 Jul-30-2001 EHB00078 BAV99 free pdf transistor a7s bav99 marking diode bav A2 SOT23

    BAW56 application note

    Abstract: A1s sot23 BAW56 V6010 ta1504 A2 SOT23
    Text: BAW56 Silicon Switching Diode Array 3  For high-speed switching applications  Common anode 2 1 VPS05161 3 1 2 EHA07006 Type Marking BAW56 A1s Pin Configuration 1 = C1 2 = C2 Package 3=A1/A2 SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage VR


    Original     		PDF BAW56 VPS05161 EHA07006 EHB00091 EHB00092 Jul-31-2001 EHB00093 BAW56 application note A1s sot23 BAW56 V6010 ta1504 A2 SOT23

    BAV170

    Abstract: No abstract text available
    Text: BAV170 3 Silicon Low Leakage Diode Array  Low-leakage applications  Medium speed switching times 2  Common cathode 1 VPS05161 3 1 2 EHA07004 Type BAV170 Marking JXs Pin Configuration 1 = A1 2 = A2 3 = C1/2 Package SOT23 Maximum Ratings Parameter Symbol


    Original     		PDF BAV170 VPS05161 EHA07004 EHB00081 Aug-20-2001 EHB00082 BAV170

    a1 sot23

    Abstract: BGX400
    Text: BGX400 Silicon Switching Diodes 3  Switching applications  High breakdown voltage  Halfbridge rectifier 2 1 1 3 VPS05161 2 EHA07365 Type Marking BGX400 GXs Pin Configuration 1=C1/A2 2=C2 Package 3=A1 SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage


    Original     		PDF BGX400 VPS05161 EHA07365 Aug-20-2001 a1 sot23 BGX400

    BAV74

    Abstract: No abstract text available
    Text: BAV74 Silicon Switching Diode Array 3  For high-speed switching applications  Common cathode 2 1 VPS05161 3 1 2 EHA07004 Type Marking BAV74 JAs Pin Configuration 1 = A1 2 = A2 Package 3 = C1/2 SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage


    Original     		PDF BAV74 VPS05161 EHA07004 EHB00071 EHB00072 Jul-31-2001 EHB00073 BAV74

    Untitled

    Abstract: No abstract text available
    Text: SMBD7000 Silicon Switching Diode Array 3  For high-speed switching applications  Connected in series 2 1 VPS05161 3 1 2 EHA07005 Type Marking SMBD7000 s5C Pin Configuration 1 = A1 2 = C2 Package 3=C1/A2 SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage


    Original     		PDF SMBD7000 EHA07005 VPS05161 Jul-31-2001 EHB00137 EHB00138

    BCW29R

    Abstract: BCW30
    Text: SOT23 PNP SILICON PLANAR SMALL SIGNAL TRANSISTORS BCW29 BCW30 ISSUE 3 - JULY 1995_ PARTMARKING DETAILS - BCW29 BCW30 BCW29R BCW30R - C1 C2 C4 C5 COMPLEMENTARY TYPES - BCW29 - BCW31 BCW30 - BCW32 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL


    OCR Scan     		PDF BCW29 BCW30 BCW29R BCW30R BCW30 BCW31 BCW32