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    C1815 MARKING TRANSISTOR Search Results

    C1815 MARKING TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    C1815 MARKING TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 C1815 Plastic-Encapsulate Transistors SOT-23 TRANSISTOR NPN FEATURES Power dissipation 1. BASE 2. EMITTER MARKING : C1815=HF 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


    Original     		OT-23 C1815 C1815 100uA, 100mA, 30MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 C1815 Plastic-Encapsulate Transistors SOT-23 TRANSISTOR NPN FEATURES Power dissipation 1. BASE 2. EMITTER MARKING : C1815=HF 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


    Original     		OT-23 C1815 C1815 100uA, 100mA, 30MHz PDF

    transistor C1815

    Abstract: c1815 ic c1815 C1815 equivalent c1815 SOT-23 NPN C1815 c1815 transistor C1815HF C1815 data c1815 marking transistor
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 C1815 Plastic-Encapsulate Transistors SOT-23 TRANSISTOR NPN FEATURES Power dissipation 1. BASE 2. EMITTER MARKING : C1815=HF 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


    Original     		OT-23 C1815 C1815 M100uA, 100mA, 30MHz transistor C1815 ic c1815 C1815 equivalent c1815 SOT-23 NPN C1815 c1815 transistor C1815HF C1815 data c1815 marking transistor PDF

    transistor c1815

    Abstract: c1815 c1815 SOT-23 C1815HF C1815 NPN Transistor c1815 marking transistor C1815H c1815 sot23 npn TRANSISTOR c1815 "transistor" c1815
    Text: C1815 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — Power dissipation MARKING : C1815=HF Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage


    Original     		C1815 OT-23 OT-23 C1815 100uA, 100mA, 30MHz transistor c1815 c1815 SOT-23 C1815HF C1815 NPN Transistor c1815 marking transistor C1815H c1815 sot23 npn TRANSISTOR c1815 "transistor" c1815 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 C1815 Plastic-Encapsulate Transistors SOT-23 TRANSISTOR NPN FEATURES Power dissipation 1. BASE 2. EMITTER MARKING : C1815=HF 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter


    Original     		OT-23 C1815 C1815 100uA, 100mA, 30MHz PDF

    C1815HF

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 C1815 Plastic-Encapsulate Transistors SOT-23 TRANSISTOR NPN FEATURES Power dissipation 1. BASE 2. EMITTER MARKING : C1815=HF 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


    Original     		OT-23 C1815 C1815 100uA, 30MHz C1815HF PDF

    C1815

    Abstract: 2c1815 transistor C1815 c1815 transistor C1815 HF c1815 SOT-23 MARKING HF NPN C1815 c1815 g C1815 NPN Transistor
    Text: C1815 200 mW, 150 mA, 60 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURE A L Power Dissipation 3 3 C B Top View 1 1 K Collector 2 E 2 3 MARKING: HF D F


    Original     		C1815 OT-23 31-Dec-2009 C1815 2c1815 transistor C1815 c1815 transistor C1815 HF c1815 SOT-23 MARKING HF NPN C1815 c1815 g C1815 NPN Transistor PDF

    2SC1815

    Abstract: NPN SILICON EPITAXIAL TRANSISTOR C1815
    Text: MCC           !"# $ %    !"# 2SC1815 Features • 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF Amplifier and General Purpose Applications. Capable of 0.4Watts of Power Dissipation.


    Original     		2SC1815 2SC1815 C1815 100uAdc, 310mAdc) 60Vdc, 50Vdc, 100mAdc, 10mAdc) NPN SILICON EPITAXIAL TRANSISTOR C1815 PDF

    pin configuration NPN transistor 2sc1815

    Abstract: pin configuration of transistor c1815 transistor C1815 C1815 GR c1815 transistor transistor C1815 y C1815 y NPN C1815 Transistor hFE CLASSIFICATION Marking CE c1815 g
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC1815 Features • 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF Amplifier and General Purpose Applications. Capable of 0.4Watts of Power Dissipation.


    Original     		2SC1815 2SC1815 C1815 100uAdc, 100mAdc, 10mAdc) 310mAdc) 10Vdc, pin configuration NPN transistor 2sc1815 pin configuration of transistor c1815 transistor C1815 C1815 GR c1815 transistor transistor C1815 y C1815 y NPN C1815 Transistor hFE CLASSIFICATION Marking CE c1815 g PDF

    pin configuration NPN transistor 2sc1815

    Abstract: pin configuration of transistor c1815 C1815 GR 2SC1815 2SC1815 DATASHEET c1815 C1815 equivalent c1815 transistor C1815 y transistor C1815 y
    Text: Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 2SC1815 Features • 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF Amplifier and General Purpose Applications. Capable of 0.4Watts of Power Dissipation.


    Original     		2SC1815 2SC1815 C1815 100uAdat) 100mAdc, 10mAdc) 310mAdc) 10Vdc, pin configuration NPN transistor 2sc1815 pin configuration of transistor c1815 C1815 GR 2SC1815 DATASHEET c1815 C1815 equivalent c1815 transistor C1815 y transistor C1815 y PDF

    pin configuration NPN transistor 2sc1815

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC1815 Features • 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF Amplifier and General Purpose Applications. Capable of 0.4Watts of Power Dissipation.


    Original     		2SC1815 2SC1815 C1815 100mAdc, 10mAdc) 310mAdc) 10Vdc, 30MHz) pin configuration NPN transistor 2sc1815 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 A1015 TRANSISTOR Plastic-Encapsulate Transistors PNP SOT-23 FEATURES High voltage and high current Excellent hFE Linearity Low niose Complementary to C1815 z z z z 1. BASE 2. EMITTER 3. COLLECTOR


    Original     		OT-23 A1015 C1815 -10mA 30MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 A1015 TRANSISTOR Plastic-Encapsulate Transistors SOT-23 PNP FEATURES High voltage and high current VCEO:=-50V(min.),IC=-150mA(max.) z Excellent hFE Linearity hFE (2)=80(Typ.) at VCE=-6V,IC=-150mA


    Original     		OT-23 A1015 -150mA -150mA C1815 -10mA 30MHz PDF

    A1015 BA

    Abstract: A1015 sot-23 c1815 pnp A1015 PNP TRANSISTOR A1015 transistor pnp a1015 marking BA sot-23 a1015 transistor c1815 SOT-23 transistor A1015
    Text: A1015 SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — — High voltage and high current VCEO:=-50V(min.),IC=-150mA(max.) Excellent hFE Linearity hFE (2)=80(Typ.) at VCE=-6V,IC=-150mA hFE (IC=-0.1mA)/hFE(IC=-2mA)=0.95(Typ.) Low niose: NF=1dB(Typ.) at f=1KHz


    Original     		A1015 OT-23 OT-23 -150mA C1815 -100u -10mA 30MHz A1015 BA A1015 sot-23 c1815 pnp A1015 PNP TRANSISTOR A1015 transistor pnp a1015 marking BA sot-23 a1015 transistor c1815 SOT-23 transistor A1015 PDF

    A1015 sot-23

    Abstract: A1015 A1015 BA transistor A1015 a1015 transistor C1815 br a1015 c1815 SOT-23 A1015 DATASHEET equivalent transistor A1015
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 A1015 TRANSISTOR Plastic-Encapsulate Transistors PNP SOT-23 FEATURES High voltage and high current Excellent hFE Linearity Low niose Complementary to C1815 z z z z 1. BASE 2. EMITTER 3. COLLECTOR


    Original     		OT-23 A1015 C1815 -10mA 30MHz A1015 sot-23 A1015 A1015 BA transistor A1015 a1015 transistor C1815 br a1015 c1815 SOT-23 A1015 DATASHEET equivalent transistor A1015 PDF

    C1815 NPN Transistor

    Abstract: npn TRANSISTOR c1815 pin configuration of transistor c1815 2SC1815 transistor C1815 y Transistor hFE CLASSIFICATION Marking CE pin configuration NPN transistor 2sc1815 2SC1815 GR c1815 g
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC1815 Features • 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF Amplifier and General Purpose Applications. Capable of 0.4Watts of Power Dissipation.


    Original     		2SC1815 2SC1815 C1815 100uAdc, 310mAdc) 60Vdc, 50Vdc, 100mAdc, 10mAdc) C1815 NPN Transistor npn TRANSISTOR c1815 pin configuration of transistor c1815 transistor C1815 y Transistor hFE CLASSIFICATION Marking CE pin configuration NPN transistor 2sc1815 2SC1815 GR c1815 g PDF

    pin configuration NPN transistor 2sc1815

    Abstract: pin configuration of transistor c1815 2SC1815 npn c1815 C1815 NPN Transistor IC 244 pin configuration 2s*1815 transistor
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC1815 Features • 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF Amplifier and General Purpose Applications.


    Original     		2SC1815 2SC1815 C1815 100uAdc, 310mAdc) 60Vdc, 100mAdc, 10mAdc) 10Vdc, pin configuration NPN transistor 2sc1815 pin configuration of transistor c1815 npn c1815 C1815 NPN Transistor IC 244 pin configuration 2s*1815 transistor PDF

    C1815 GR

    Abstract: 2SC1815 2SC1815GR 2sc1815 transistor micro transistor 2SC1815-GR 2SC1815-BL OF C1815 GR 2SC1815BL 2SC1815 GR
    Text: MCC TM Micro Commercial Components 2SC1815 2SC1815-O 2SC1815-Y 2SC1815-GR 2SC1815-BL   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF


    Original     		2SC1815 2SC1815-O 2SC1815-Y 2SC1815-GR 2SC1815-BL C1815 100uAdc, C1815 GR 2SC1815GR 2sc1815 transistor micro transistor 2SC1815-BL OF C1815 GR 2SC1815BL 2SC1815 GR PDF

    NPN C1815

    Abstract: micro transistor c1815 npn
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC1815 Features • 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF Amplifier and General Purpose Applications.


    Original     		2SC1815 2SC1815 C1815 100uAdc, 310mAdc) NPN C1815 micro transistor c1815 npn PDF

    C1815 GR

    Abstract: 2SC1815 2SC1815GR 2SC1815-GR c1815 transistor 2SC1815BL 2SC1815 DATASHEET OF C1815 GR 2SC1815-BL 2SC1815 GR
    Text: MCC TM Micro Commercial Components 2SC1815-O 2SC1815-Y 2SC1815-GR 2SC1815-BL   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF


    Original     		2SC1815-O 2SC1815-Y 2SC1815-GR 2SC1815-BL 2SC1815 C1815 C1815 GR 2SC1815GR 2SC1815-GR c1815 transistor 2SC1815BL 2SC1815 DATASHEET OF C1815 GR 2SC1815-BL 2SC1815 GR PDF

    C1815 GR

    Abstract: 2SC1815 NPN C1815 2SC1815-BL transistor c1815 2SC1815Y 2SC1815-GR 2SC1815BL 2SC1815GR 2SC1815 GR
    Text: MCC TM Micro Commercial Components 2SC1815-O 2SC1815-Y 2SC1815-GR 2SC1815-BL   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF


    Original     		2SC1815-O 2SC1815-Y 2SC1815-GR 2SC1815-BL 2SC1815 C1815 C1815 GR NPN C1815 2SC1815-BL transistor c1815 2SC1815Y 2SC1815BL 2SC1815GR 2SC1815 GR PDF

    2SC1815

    Abstract: 2SC1815Y C1815 y 2SC1815-BL 2SC1815-GR 2SC1815BL 2SC1815GR 2SC1815 GR 2SC1815 Y 2SC1815O
    Text: MCC TM Micro Commercial Components 2SC1815-O 2SC1815-Y 2SC1815-GR 2SC1815-BL   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF


    Original     		2SC1815-O 2SC1815-Y 2SC1815-GR 2SC1815-BL 2SC1815 C1815 -55oC 125oC 2SC1815Y C1815 y 2SC1815-BL 2SC1815BL 2SC1815GR 2SC1815 GR 2SC1815 Y 2SC1815O PDF

    c1815 SOT-23

    Abstract: transistor c1815 data C1815 transistor c1815 sheet C1815 data 30MHZ C1815 NPN Transistor data transistor C1815 transistor c1815 c1815 hf
    Text: C1815 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR NPN FEATURES * Power dissipation PCM : 0.2 W (Tamb=25OC) * Collector current ICM : 0.15 mA * Collector-base voltage V(BR)CBO : 60 V * Operating and storage junction temperature range O O TJ,Tstg: -55 C to +150 C


    Original     		C1815 OT-23 OT-23 MIL-STD-202E c1815 SOT-23 transistor c1815 data C1815 transistor c1815 sheet C1815 data 30MHZ C1815 NPN Transistor data transistor C1815 transistor c1815 c1815 hf PDF

    2SC1815

    Abstract: C1815 C1815 GR 2SC1815-BL 2SC1815-GR 2SC1815BL 2SC1815GR 2SC1815 GR 2SC1815 Y 2SC1815O
    Text: MCC TM Micro Commercial Components 2SC1815-O 2SC1815-Y 2SC1815-GR 2SC1815-BL   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF


    Original     		2SC1815-O 2SC1815-Y 2SC1815-GR 2SC1815-BL 2SC1815 C1815 -55oC 125oC C1815 C1815 GR 2SC1815-BL 2SC1815BL 2SC1815GR 2SC1815 GR 2SC1815 Y 2SC1815O PDF