200w dc applications
Abstract: 200w power amplifier QPP-026 H10895 xemod
Text: QPP-026 200W, 925-960MHz Class AB Power Stage QuikPAC Module Data General description: Features: The QPP-026 QuikPAC RF power module is a Class AB amplifier stage designed for use in the output stage of linear RF power amplifiers for cellular base stations. The power transistors are
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QPP-026
925-960MHz
QPP-026
H10549)
H10895)
200w dc applications
200w power amplifier
H10895
xemod
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AZP63
Abstract: AZEBP63Q
Text: AZEBP63Q Evaluation Board for AZP63 Low Phase Noise Buffers www.azmicrotek.com DESCRIPTION FEATURES The AZEBP63Q evaluation board is a multi-layer PCB assembly containing the AZP63 low phase noise buffer and supporting components. They provide an excellent platform for initial design verification and validation
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AZEBP63Q
AZP63
AZEBP63Q
-165dBc/Hz)
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AZP52
Abstract: AZP51 AZP54 AZEBP53Q AZP53
Text: AZEBP53Q Evaluation Board for AZP53 Low Phase Noise Buffers www.azmicrotek.com DESCRIPTION FEATURES The AZEBP53Q evaluation board is a multi-layer PCB assembly containing the AZP53 low phase noise buffer and supporting components. They provide an excellent platform for initial design verification and validation
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AZEBP53Q
AZP53
AZEBP53Q
-165dBc/Hz)
800MHz
AZP63.
AZP52
AZP51
AZP54
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Untitled
Abstract: No abstract text available
Text: AZEBP63Q Evaluation Board for AZP63 Low Phase Noise Buffers www.azmicrotek.com DESCRIPTION FEATURES The AZEBP63Q evaluation board is a multi-layer PCB assembly containing the AZP63 low phase noise buffer and supporting components. They provide an excellent platform for initial design verification and validation
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AZEBP63Q
AZP63
AZEBP63Q
-165dBc/Hz)
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Untitled
Abstract: No abstract text available
Text: AZEBP53Q Evaluation Board for AZP53 Low Phase Noise Buffers www.azmicrotek.com DESCRIPTION FEATURES The AZEBP53Q evaluation board is a multi-layer PCB assembly containing the AZP53 low phase noise buffer and supporting components. They provide an excellent platform for initial design verification and validation
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AZEBP53Q
AZP53
AZEBP53Q
-165dBc/Hz)
800MHz
AZP63.
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ia2410
Abstract: No abstract text available
Text: STEVAL-TDR011V1 2-stage RF power amplifier with LPF based on the PD85006L-E and STAP85050 RF power transistors Features • Excellent thermal stability ■ Frequency: 400 - 470 MHz ■ Supply voltage: 13.6 V ■ Output power: 50 W ■ Current: < 10 A ■ Input power: 20 dBm
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STEVAL-TDR011V1
PD85006L-E
STAP85050
STEVAL-TDR011V1
ia2410
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AS080447-33N
Abstract: l0422 IA2410 C22A c2f sot AS120252-9R3N IA4910 C2F SOT23 PD85006L-E PD85035S-E
Text: STEVAL-TDR011V1 2-stage RF power amplifier with LPF based on the PD85006L-E and STAP85050 RF power transistors Features • Excellent thermal stability ■ Frequency: 400 - 470 MHz ■ Supply voltage: 13.6 V ■ Output power: 50 W ■ Current: < 10 A ■ Input power: 20 dBm
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STEVAL-TDR011V1
PD85006L-E
STAP85050
STEVAL-TDR011V1
AS080447-33N
l0422
IA2410
C22A
c2f sot
AS120252-9R3N
IA4910
C2F SOT23
PD85035S-E
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MA4P7436-1141T
Abstract: AS080447-33N IA2410 AS120252-9R3N PD85006L-E SOT323-5 C1P SOT23 GRM42-6 COG c6p SOT23 PD85035s-e
Text: STEVAL-TDR011V1 2-stage RF power amplifier with LPF based on the PD85006L-E and STAP85050 RF power transistors Data brief Features • Excellent thermal stability ■ Frequency: 400 - 470 MHz ■ Supply voltage: 13.6 V ■ Output power: 50 W ■ Current: < 10 A
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STEVAL-TDR011V1
PD85006L-E
STAP85050
STEVAL-TDR011V1
MA4P7436-1141T
AS080447-33N
IA2410
AS120252-9R3N
SOT323-5
C1P SOT23
GRM42-6 COG
c6p SOT23
PD85035s-e
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C1f TRANSISTOR
Abstract: 200w Transistor rf transistor 200w QPP-025 class d 200w
Text: QPP-025 200W, 925-960MHz Class AB Power Stage QuikPAC Module Data General description: Features: The QPP-025 QuikPAC RF power module is an impedance matched Class AB amplifier stage designed for use in the output stage of linear RF power amplifiers for cellular base stations. The
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QPP-025
925-960MHz
QPP-025
H10549)
H10895)
C1f TRANSISTOR
200w Transistor
rf transistor 200w
class d 200w
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C1f TRANSISTOR
Abstract: QPP-035
Text: QPP-035 200W, 851-866MHz Class AB Power Stage Preliminary QuikPAC Module Data General description: Features: The QPP-035 QuikPAC RF power module is an impedance matched Class AB amplifier stage designed for use in the output stage of linear RF power amplifiers for SMR base stations. The
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QPP-035
851-866MHz
QPP-035
H10549)
H10895)
C1f TRANSISTOR
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C1f TRANSISTOR
Abstract: QPP-033
Text: QPP-033 200W, 832-870MHz Class AB Power Stage Preliminary QuikPAC Module Data General description: Features: The QPP-033 QuikPAC RF power module is an impedancematched Class AB amplifier stage designed for use in the output stage of linear RF power amplifiers for CDMA base stations. The
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QPP-033
832-870MHz
QPP-033
H10549)
H10895)
C1f TRANSISTOR
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QPP-035
Abstract: QPP-036
Text: QPP-036 200W, 851-866MHz Class AB Power Stage Preliminary QuikPAC Module Data General description: Features: The QPP-035 QuikPAC RF power module is an impedancematched Class AB amplifier stage designed for use in the output stage of linear RF power amplifiers for SMR base stations. The
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QPP-036
851-866MHz
QPP-035
H10549)
H10895)
QPP-036
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QPP-034
Abstract: 200W AMPLIFIER
Text: QPP-034 200W, 832-870MHz Class AB Power Stage Preliminary QuikPAC Module Data General description: Features: The QPP-034 QuikPAC RF power module is an impedancematched Class AB amplifier stage designed for use in the output stage of linear RF power amplifiers for CDMA base stations. The
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QPP-034
832-870MHz
QPP-034
H10549)
H10895)
200W AMPLIFIER
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Untitled
Abstract: No abstract text available
Text: STEVAL-TDR011V1 2-stage RF power amplifier with LPF based on the PD85006L-E and STAP85050 RF power transistors Features • Excellent thermal stability ■ Frequency: 400 - 470 MHz ■ Supply voltage: 13.6 V ■ Output power: 50 W ■ Current: < 10 A ■ Input power: 20 dBm
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STEVAL-TDR011V1
PD85006L-E
STAP85050
STEVAL-TDR011V1
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1206 SMD Capacitor types
Abstract: Nu SmD TRANSISTOR smd ss 5 transistor smd transistor c1c SMD Transistor SS F NPC1034 NCP1034 tranzistor smd NPN TRANZISTOR tranzistor smd KEY
Text: DN06041/D Design Note – DN06041/D NCP1034 Buck Converter Device NCP1034 Input Voltage 48 V ±20 % Output Voltage 5V Output Current 5A Description Voltage Topology ripple < 30 mV Buck I/O Isolation None Key Features This Design Note describes high voltage, high power
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DN06041/D
NCP1034
NCP1034
NCP1034.
1206 SMD Capacitor types
Nu SmD TRANSISTOR
smd ss 5 transistor
smd transistor c1c
SMD Transistor SS F
NPC1034
tranzistor smd
NPN TRANZISTOR
tranzistor smd KEY
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ic isl 887
Abstract: PC2710TB PC2709T C1E mmic NEC 718 MARKING Pa 6pin TRANSISTOR marking 1F 6pin C1f TRANSISTOR
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC2710TB 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The µPC2710TB is a silicon monolithic integrated circuit designed as PA driver for 900 MHz band cellular telephone tuners. This IC is packaged in super minimold package which is smaller than conventional minimold.
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PC2710TB
PC2710TB
ic isl 887
PC2709T
C1E mmic
NEC 718
MARKING Pa 6pin TRANSISTOR
marking 1F 6pin
C1f TRANSISTOR
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STAP85050
Abstract: Multimeter service manual PD85006L-E "RF Power Amplifier" amplifier diagram C14A china mobile main board METAL DETECTOR circuit for make metal detector schematic schematic diagram power amplifier free download
Text: UM0890 User manual 2-stage RF power amplifier with LPF based on the PD85006L-E and STAP85050 RF power transistors Introduction This user manual briefly describes the function and use of the STEVAL-TDR011V1 demonstration board. The board is a two-stage 50 W RF power amplifier which includes an output LPF low-pass
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UM0890
PD85006L-E
STAP85050
STEVAL-TDR011V1
STEVAL-TDR011V1
Multimeter service manual
"RF Power Amplifier"
amplifier diagram
C14A
china mobile main board
METAL DETECTOR circuit for make
metal detector schematic
schematic diagram power amplifier free download
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Untitled
Abstract: No abstract text available
Text: 5V, SUPER MINIMOLD UPC2710TB MEDIUM POWER SI MMIC AMPLIFIER GAIN vs. FREQUENCY and TEMPERATURE FEATURES 35 • HIGH DENSITY SURFACE MOUNTING: 6 Pin Super Minimold or SOT-363 package VCC = 5.0 V • SATURATED OUTPUT POWER: +13.5 dBm • SUPPLY VOLTAGE: VCC = 4.5 to 5.5 V
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UPC2710TB
OT-363
UPC2710T,
UPC2710TB-E3
24-Hour
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ic isl 887
Abstract: P12152E PC2710TB VP15-00-3 UPC2710TB C1f TRANSISTOR
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC2710TB 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The µPC2710TB is a silicon monolithic integrated circuit designed as PA driver for 900 MHz band cellular telephone tuners. This IC is packaged in super minimold package which is smaller than conventional minimold.
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PC2710TB
PC2710TB
PC2710T
PC2710T.
ic isl 887
P12152E
VP15-00-3
UPC2710TB
C1f TRANSISTOR
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ BIPOLAR ANALOG INTEGRATED CIRCUIT |iPC2710TB 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The /XPC2710TB is a silicon monolithic integrated circuits designed as PA driver for 900 MHz band cellular
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iPC2710TB
/XPC2710TB
PC2710T
uPC2710T
WS60-00-1
C10535E)
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PC2710
Abstract: PC2710T P12152E PC2710TB PDC900M 38808
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC2710T 5 V, MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The µPC2710T is a silicon monolithic integrated circuits designed as PA driver for 900 MHz band cellular telephone tuners. This IC is packaged in minimold package.
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PC2710T
PC2710T
PC2710
P12152E
PC2710TB
PDC900M
38808
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PC2710TB
Abstract: MPC2710 C1f TRANSISTOR P12152E
Text: PRELIMINARY DATA SHEET_ BIPOLAR ANALOG INTEGRATED CIRCUIT JU P C 2 7 1 0 T B 5 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The //PC2710TB is a silicon monolithic integrated circuits designed as PA driver for 900 MHz band cellular
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uPC2710TB
PC2710TB
PC2710T
/PC2710TB
PC2710T.
MPC2710
C1f TRANSISTOR
P12152E
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UPC2710TB-E3-A
Abstract: uPC2710 UPC2710T UPC2710TB
Text: 5V, SUPER MINIMOLD UPC2710TB MEDIUM POWER SI MMIC AMPLIFIER GAIN vs. FREQUENCY and TEMPERATURE FEATURES 35 • HIGH DENSITY SURFACE MOUNTING: 6 Pin Super Minimold or SOT-363 package VCC = 5.0 V • SATURATED OUTPUT POWER: +13.5 dBm • SUPPLY VOLTAGE: VCC = 4.5 to 5.5 V
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UPC2710TB
OT-363
UPC2710TB
UPC2710T,
UPC2710TB-E3-A
uPC2710
UPC2710T
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Untitled
Abstract: No abstract text available
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT ¿iPC271 OT 5 V, MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The ^¡PC2710T is a silicon monolithic integrated circuits designed as PA driver for 900 MHz band cellular telephone tuners. This IC is packaged in minimold package.
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iPC271
PC2710T
WS60-00-1
C10535E)
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