Ferraz Shawmut fuse nh
Abstract: No abstract text available
Text: Special Purpose Fuses Special Purpose Fuses European Fuses Rotating Fuses C1G Range Ferraz Shawmut rotating fuses are specially designed for with standing very high mechanical accelerations, up to 6000g. They are perfectly suited to protecting rectifying diodes used in rotating excitors of power producing
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6000g.
Ferraz Shawmut fuse nh
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hall effect 66a
Abstract: 66a hall sensor planar transformer theory transmission line transformers 2C12 RG405 ATN-4112A FCI Airmax VSe FREQUENCY DOMAIN REFLECTOMETER HP8720ES
Text: DesignCon 2006 Theory and Measurement of Unbalanced Differential-Mode Transmission Lines Stephen B. Smith, FCI USA, Inc. [email protected] Sedig S. Agili, Penn State University. ssa10@psu.edu Vittal Balasubramanian, FCI USA, Inc. [email protected]
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ssa10
MTT-13,
hall effect 66a
66a hall sensor
planar transformer theory
transmission line transformers
2C12
RG405
ATN-4112A
FCI Airmax VSe
FREQUENCY DOMAIN REFLECTOMETER
HP8720ES
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C1H mmic
Abstract: UPC2711TB UPC2712TB-E3 mmic e3 UPC2711TB-E3 UPC2712TB c1g nec marking C1H mmic
Text: PRELIMINARY DATA SHEET 5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER FEATURES UPC2711TB UPC2712TB TYPICAL PERFORMANCE CURVES • HIGH DENSITY SURFACE MOUNTING: 6 pin super minimold or SOT- 363 package GAIN vs. FREQUENCY 25 • SUPPLY VOLTAGE: VCC = 4.5 to 5.5 V
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UPC2711TB
UPC2712TB
UPC2711TB:
UPC2712TB:
UPC2711TB
UPC2712TB
C1H mmic
UPC2712TB-E3
mmic e3
UPC2711TB-E3
c1g nec
marking C1H mmic
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marking c1g
Abstract: marking c1h UPC2712TB pt 7313
Text: BIPOLAR ANALOG INTEGRATED CIRCUITS UPC2711TB, UPC2712TB 5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER TYPICAL PERFORMANCE CURVES FEATURES • HIGH DENSITY SURFACE MOUNTING: 6 pin super minimold or SOT- 363 package GAIN vs. FREQUENCY 25 • SUPPLY VOLTAGE: VCC = 4.5 to 5.5 V
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UPC2711TB:
UPC2712TB:
UPC2711TB,
UPC2712TB
UPC2712TB
UPC2711TB
UPC2711TB
marking c1g
marking c1h
pt 7313
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am tuners
Abstract: Sat Tuner Application Note marking c1g 865 marking power amplifier diode gp 421 marking 865 marking 865 mmic transistor 936 UPC2711 UPC2711TB
Text: BIPOLAR ANALOG INTEGRATED CIRCUITS UPC2711TB, UPC2712TB 5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER TYPICAL PERFORMANCE CURVES FEATURES • HIGH DENSITY SURFACE MOUNTING: 6 pin super minimold or SOT- 363 package GAIN vs. FREQUENCY 25 • SUPPLY VOLTAGE: VCC = 4.5 to 5.5 V
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UPC2711TB,
UPC2712TB
UPC2711TB:
UPC2712TB:
UPC2711TB
UPC2711TB
UPC2712TB
am tuners
Sat Tuner Application Note
marking c1g
865 marking power amplifier
diode gp 421
marking 865
marking 865 mmic
transistor 936
UPC2711
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pt 7313
Abstract: diode gp 421 UPC2711TB UPC2711TB-E3 UPC2712TB UPC2712TB-E3
Text: UPC2711TB UPC2712TB 5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER FEATURES TYPICAL PERFORMANCE CURVES • HIGH DENSITY SURFACE MOUNTING: 6 pin super minimold or SOT- 363 package GAIN vs. FREQUENCY 25 • SUPPLY VOLTAGE: VCC = 4.5 to 5.5 V UPC2712TB • WIDEBAND RESPONSE:
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UPC2711TB
UPC2712TB
UPC2711TB:
UPC2712TB:
UPC2711TB
UPC2712TB
pt 7313
diode gp 421
UPC2711TB-E3
UPC2712TB-E3
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marking code C1H
Abstract: k1g marking C1G Transistor MARKING
Text: MMBTA05 / MMBTA06 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • • • • • • Epitaxial Planar Die Construction Complementary PNP Type Available MMBTA55 / MMBTA56 Ideal for Low Power Amplification and Switching
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MMBTA05
MMBTA06
MMBTA55
MMBTA56)
AEC-Q101
J-STD-020
MIL-STD-202,
DS30037
marking code C1H
k1g marking
C1G Transistor MARKING
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uPC2712
Abstract: PC2713T Package Marking C2s
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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nec b1007
Abstract: T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G
Text: California Eastern Laboratories Package Dimensions PART NUMBER DESCRIPTION NE68018 NEC part numbers are specified by die and package number. NE680 Die "18" Package PACKAGE MARKINGS NEC devices are marked with various indications which indicate part type, lot code year and month . Due to size constraints,
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NE68018
NE680
UPA801TC
UPA808TC
UPA821TC
UPA826TC
UPA861TD
UPA831TC
UPA862TD
UPA835TC
nec b1007
T79 code marking
C3206
marking s16
marking code C1H
qfn marking t88
C3H marking
NE02107
T79 marking
C3206G
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nec d822
Abstract: D1289 NEC D1481 NEC D382 D1046 D1384 D1409 D1549 D1197 D552
Text: DATA SHEET SHEET DATA BIPOLAR ANALOG INTEGRATED CIRCUITS PPC2711TB, PPC2712TB 5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER FOR DBS TUNERS DESCRIPTION The PPC2711TB and PPC2712TB are silicon monolithic integrated circuits designed as buffer amplifier for DBS
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PPC2711TB,
PPC2712TB
PPC2711TB
PPC2712TB
PPC2711TB
PPC2711T/PPC2712T
PPC2711TB/PPC2712TB
PPC2711T/PPC2712T.
nec d822
D1289
NEC D1481
NEC D382
D1046
D1384
D1409
D1549
D1197
D552
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uPC2712
Abstract: PC2713T marking c1g GE 7313 upc2711tb UPC2712TB
Text: DATA SHEET SHEET DATA BIPOLAR ANALOG INTEGRATED CIRCUITS µPC2711TB, µPC2712TB 5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER DESCRIPTION The µPC2711TB and µPC2712TB are silicon monolithic integrated circuits designed as buffer amplifier for DBS tuners. These ICs are packaged in super minimold package which is smaller than conventional minimold.
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PC2711TB,
PC2712TB
PC2711TB
PC2712TB
PC2711TB
PC2711T/
PC2712T
PC2711TB/
uPC2712
PC2713T
marking c1g
GE 7313
upc2711tb
UPC2712TB
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PC2713T
Abstract: 9480 WS60 P11976J
Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
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PC2711TB,
PC2712TB
PC2712TBBSIC
PC2711T,
PC2712T
PC2711TB
PC2713T
9480 WS60
P11976J
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DB815
Abstract: UPC2708 UPC2708T UPC2708T-E3 UPC2711 UPC2711T UPC2711T-E3
Text: 3 GHz SILICON MMIC WIDE-BAND AMPLIFIER FEATURES UPC2708T UPC2711T GAIN vs. FREQUENCY 20 • WIDE FREQUENCY RESPONSE: 3 GHz • HIGH GAIN: 15 dB UPC2708T UPC2708 15 Gain, GS (dB) • SATURATED OUTPUT POWER: +10 dBm (UPC2708T) • INTERNAL CURRENT REGULATION MINIMIZES GAIN
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UPC2708T
UPC2711T
UPC2708T)
UPC2708
UPC2711
UPC2708T
UPC2711T
UPC2708T-E3
UPC2711T-E3
DB815
UPC2708
UPC2708T-E3
UPC2711
UPC2711T-E3
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Untitled
Abstract: No abstract text available
Text: ,r« 8 1993 NEC 3 GHz SILICON MMIC WIDE-BAND AMPLIFIER UPC2708T UPC2711T FEATURES_ • WIDE FREQUENCY RESPONSE: 3 GHz • HIGH GAIN: 15 dB UPC2708T • SATURATED OUTPUT POWER: +10 dBm (UPC2708T) • 5 V SINGLE SUPPLY VOLTAGE • SUPER SM ALL PACKAGE
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UPC2708T
UPC2711T
UPC2708T)
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laser diode spice model simulation
Abstract: Gigabit Logic
Text: TEKTRONIX INC/ TRI 2UINT 2bE 1 Bl ÖTObHlfl DDÜGSQ7 7 HITRÛ ' T - q ’i - l S [(È lB ÏL J G ig a B it L o g ic 16G020 Programmable Single Gate GaAs D-MESFET Array FEATURES • 11 single gate depletion MESFETs on each chip • f t = 22 GHz typical frequency response
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16G020
050P3
laser diode spice model simulation
Gigabit Logic
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Untitled
Abstract: No abstract text available
Text: NEC 3 GHz SILICON MMIC WIDE-BAND AMPLIFIER FEATURES g a in vs. UPC2708T UPC2711T frequency • WIDE FREQUENCY RESPONSE: 3 GHz • HIGH GAIN: 15 dB UPC2708T • SATURATED OUTPUT POWER: +10 dBm (UPC2708T) • INTERNAL CURRENT REGULATION MINIMIZES GAIN CHANGE OVER TEMPERATURE
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UPC2708T)
UPC2708T
UPC2711T
UPC2711T
qua08T
UPC2708T/U
PC2711T
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74HC1G04
Abstract: 74HCT1G04 74HC1G125 74HC1G125GW 74HCT1G125 74HCT1G125GW
Text: Philips Semiconductors Product specification Bus buffer/line driver; 3-state 74HC1G125; 74HCT1G125 FEATURES QUICK REFERENCE DATA • Wide operating voltage: 2.0 to 6.0 V GND = 0 V; Tamb = 25 °C; tr = tf < 6.0 ns. TYP. SYMBOL • Symmetrical output impedance
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74HC1G125;
74HCT1G125
74HC1G/HCT1G125
74HC/HCT125.
74HC1G04
74HCT1G04
74HC1G125
74HC1G125GW
74HCT1G125
74HCT1G125GW
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Untitled
Abstract: No abstract text available
Text: TEKTRONIX INC/ TRI ÛUINT 2bE D B Ô^GbSlû G O D D S n 3 O T R Ö [ È S S I] G ig a B it L o g ic 16G021 Programmable Dual Gate GaAs D-MESFET Array FEATURES • • • • • • >Available with personalized interconnects in the package for design integration and improved
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16G021
050P3
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Untitled
Abstract: No abstract text available
Text: TEKTRONIX INC/ TRI rSUINT 2LE D El aiObSJa OOOOSOS a « T R Ú T 4 'j 3.11 G ig a B it L o g ic 1 -T A 16G011 Programmable GaAs Schottky Diode Arrays FEATURES • 14 Schottky barrier diodes and one full wave rectifier on each chip • 15 mA 16G010 and 100 mA (16G011) versions
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16G011
16G010)
16G011)
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT ¿iPC3210TB 5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER DESCRIPTION The ^¡PC3210TB is a silicon monolithic integrated circuits designed as w ideband amplifier. The ^¡PC3210TB is suitable to system s required w ideband operation from HF to L band.
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iPC3210TB
PC3210TB
WS60-00-1
C10535E)
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Untitled
Abstract: No abstract text available
Text: 3 GHz SILICON MMIC WIDE-BAND AMPLIFIER UPC2708T UPC2711T FEATURES • W IDE FREQUENCY RESPONSE: 3 GHz • HIGH GAIN: 15 dB UPC2708T • SATURATED OUTPUT POWER: +10 dBm (UPC2708T) m T> • INTERNAL CURRENT REGULATION MINIMIZES GAIN CHANGE OVER TEMPERATURE
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UPC2708T)
UPC2708T
UPC2711T
UPC2711T
UPC2708T-E3
UPC2711T-E3
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Untitled
Abstract: No abstract text available
Text: 3 GHz SILICON MMIC WIDE-BAND AMPLIFIER UPC2708T UPC2711T FEATURES • W ID E FREQ UENC Y R ESPO NSE: 3 GHz • HIG H G AIN: 15 dB UPC 2708T • SA TUR ATED O U TPU T PO W ER: +10 dBm (UPC2708T) • INTERNAL CU R R EN T REG ULATIO N M INIM IZES GAIN CH ANG E O VER T EM PER A TU R E
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UPC2708T
UPC2711T
2708T)
UPC2708T)
2708T
2711T
UPC2708T-E3
UPC2711T-E3
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ BIPOLAR ANALOG INTEGRATED CIRCUIT juPC3210TB 5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER DESCRIPTION The ¿¿PC3210TB is a silicon monolithic integrated circuits designed as wideband amplifier. The /iPC3210TB is
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uPC3210TB
PC3210TB
/iPC3210TB
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