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    C22S Search Results

    C22S Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    RTK9744C22S01000BE Renesas Electronics Corporation RZ/G2LC Evaluation Board Kit Visit Renesas Electronics Corporation
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    C22S Price and Stock

    Taiwan Semiconductor BZT52C22S-R9G

    SOD-323F, 200MW, 5%, SMALL SIGNA
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    DigiKey BZT52C22S-R9G Cut Tape 10,000 1
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    BZT52C22S-R9G Digi-Reel 10,000 1
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    BZT52C22S-R9G Reel 10,000 10,000
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    Suzhou Good-Ark Electronics Co Ltd BZT52C22S

    DIODE, ZENER, 0.50W, 22.0V, 5%,
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    DigiKey BZT52C22S Digi-Reel 6,000 1
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    BZT52C22S Cut Tape 6,000 1
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    PanJit Group BZT52-C22S_R1_00001

    SURFACE MOUNT SILICON ZENER DIOD
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    DigiKey BZT52-C22S_R1_00001 Reel 5,000 5,000
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    Ozdisan Elektronik BZT52-C22S_R1_00001
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    Genicom Co Ltd GUVA-C22SD

    SENSOR PHOTODIODE 2SMD
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    Bristol Electronics GUVA-C22SD 550
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    Diodes Incorporated BZX84C22S-7

    DIODE ZENER ARRAY 22V SOT363
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    DigiKey BZX84C22S-7 Reel 3,000 3,000
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    BZX84C22S-7 Cut Tape 1,159 1
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    C22S Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DIODE 1474

    Abstract: 4932 DIODE se14 P 4932 C23CE 3112 cms diode Hitachi DSAUTAZ006
    Text: —PRELIMINARY— HD66764 176-channel Common Driver for Color Displays Preliminary Specification Rev.0.6 January, 2001 Description n o The HD66764 is a common-driver LSI for systems with color-liquid-crystal dot-matrix graphic displays. It incorporates 176 LCD drive circuits and power-supply circuits. An external capacitor is


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    PDF HD66764 176-channel HD66764 HD66763 384-channel 128-by-176 DIODE 1474 4932 DIODE se14 P 4932 C23CE 3112 cms diode Hitachi DSAUTAZ006

    C02S

    Abstract: c28s
    Text: 8 7 4 5 6 1 2 3 REVISIONS PART NUMBER CODING P _ C _ _ S_ _N REV. ECO. NO DESCRIPTION DATE BY A 861 INITIAL RELEASE 12/14/2005 HT B 1143 ADD ALL TERMINATION TYPES 9/14/2006 MV F F TERMINATION TYPE TERMINATION TYPE NUMBER OF POSITIONS PER ROW HEAD DIMENSION


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    PDF C10640 Drawings\C10640, C02S c28s

    C22S-DH-G-K20

    Abstract: C22S-DL-G-K10-120 ISO13850 C22S-D-W-K20
    Text: 1069-2012.qxp:QuarkCatalogTempNew 9/1/12 10:41 AM Page 1069 12 Pushbuttons RoHS Eaton’s C22 compact pushbutton line offers an industry leading array of functional, attractive, and ergonomically designed “all-in-one” illuminated and non-illuminated pushbuttons, emergency stops, selector switches and indicating lights. The


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    PDF C22-PVS45P-MS1-K11 C22-PVT60P-K11 ISO13850, NFPA79 C22-PVS45P-MS1-K11 C22-PVS60P-MS1-K11 C22-PVT45P-K11 C22-PVT60P-K11 C22S-DH-G-K20 C22S-DL-G-K10-120 ISO13850 C22S-D-W-K20

    C02S

    Abstract: c28s c14s C04S C33S
    Text: 8 7 4 5 6 1 2 3 P _ C _ _ S_ _N REVISIONS TERMINATION TYPE F NUMBER OF POSITIONS PER ROW TERMINATION CODE BA BB BC BD BE BF BG LEAD FREE GA GB GC GD D DA .140 3.56 B A .050 1.27 A B .140 3.56 HEAD DIMENSION .100 2.54 A .100 2.54 TYP. P _C _ _S _ _ N FITS RIGHT ANGLE BEND


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    PDF C10907 Drawings\C10907, C02S c28s c14s C04S C33S

    C22-WRKV-K20

    Abstract: C22-L-R-120 2826
    Text: 1070-2012.qxp:QuarkCatalogTempNew 9/1/12 10:41 AM Page 1070 INTERCONNECT TEST & MEASUREMENT 12 Selector Switches and Indicators Selector Switches RoHS With over 20 variations of operation and 8 varieties of key codes, the C22 line offers a very complete line of selector switches.


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    PDF C22-WK3-K11 7005860cifically IP69K C22-L-B-120 C22-L-B-24 C22-L-G-120 C22-L-G-24 C22-L-R-120 C22-L-R-24 C22-L-W-120 C22-WRKV-K20 2826

    DN1E010M1S

    Abstract: RPE132F104Z50 RPE131CH IC CON40A RPE132 DSP03-003-432G RPE131 DN1C220M1S CON40A S1C8F360 DEMO Board
    Text: MF1520-02 CMOS 8-BIT SINGLE CHIP MICROCOMPUTER S5U1C8F360T1 Manual S1C8F360 DEMO Board Hardware/Software NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice. Seiko Epson does not assume any


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    PDF MF1520-02 S5U1C8F360T1 S1C8F360 E-08190 DN1E010M1S RPE132F104Z50 RPE131CH IC CON40A RPE132 DSP03-003-432G RPE131 DN1C220M1S CON40A S1C8F360 DEMO Board

    4063AB

    Abstract: 4063YB cathode ray vacuum tube
    Text: C22SS/IB 4063A B C22SS/2B (4063Y B) H ig h V a c u u m C a t h o d e R a y Tub e 4063AB (B lu e S c re e n ) 4063YB (B lu e S creen Y p la te s te rm in a te d th ro u g h sid e o f b u lb ) CATHODE. Indirectly-heated oxide-coated Voltage Nom inal h e a te r c u rre n t


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    PDF 4063AB 4063YB C22SS/IB 4063AB) C22SS/2B 4063YB) 4063AB C22SS/I 4063YB cathode ray vacuum tube

    transistor a effet de champ

    Abstract: BF247 transistor 139 BF signaux
    Text: BF247 F IE L D E FFEC T T R A N S IS T O R , S IL IC O N , N C H A N N E L TRANSISTOR A E FFE T DE CHAMP, SILICIUM, CANAL N -Amplification Amplification -Chopper Découpeur V DS 25 V max. ' dss 30 . . . 25 0 mA à V QS = 0 in 3 groups e n 3 groupes 2 3 m A /V ty p à V GS = 0


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    PDF Iy21sI CB-76 C11ss C22ss C12ss transistor a effet de champ BF247 transistor 139 BF signaux

    BC264

    Abstract: transistor a effet de champ b c 264 transistor bc264 F-139 equivalent transistor BC 55 TRANSISTOR effet de champ BC 264 CB-76 50 transistor BC 1 BF 212 transistor
    Text: BC 264 FIELD EFFECT TRANSISTOR, SILICON, N CHANNEL TRANSISTOR A EF FE T OE CHAMP, SILICIUM, CANAL N - LF amplification Amplification BF V DS 30 V max. ' dss 2 . . . . 12 mA à V GS = 0 in 4 groups en 4 groupes F 2 dB max à V q § = 0 f » 1 kHz Plastic case F 139 B — See outline drawing CB-76 on last pages


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    PDF CB-76 lY21sl BC264 transistor a effet de champ b c 264 transistor bc264 F-139 equivalent transistor BC 55 TRANSISTOR effet de champ BC 264 CB-76 50 transistor BC 1 BF 212 transistor

    TC227

    Abstract: IR sensor LFN 2N700Z S14800 U53D LS 2027 audio amp a-b osai em 231 rtd aa2c SOT23-5 LM2729
    Text: Model: R15B R:0 Intel Banias+855PM+ICH4 PCB STACK UP LAY1 TOP LAY2 GND LAY3 IN1 LAY4 IN2 LAYS GND1 LAY6 VCC LAY7 IN3 LAY8 IN4 LAY9 GND2 LAY10 BOTTOM Revision History A Page Page Page Page Page Page Page Page Page Page Page ORIGINAL RELEASE 1 2 3 4 5 6 7 8


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    PDF 855PM LAY10 LM27281 LP2996 1AX1737 LM2729 SI4800 TC227 IR sensor LFN 2N700Z S14800 U53D LS 2027 audio amp a-b osai em 231 rtd aa2c SOT23-5 LM2729

    3866S

    Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM
    Text: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM


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    diode SY 192

    Abstract: KP902A Datenblattsammlung Halbleiterbauelemente DDR VEB mikroelektronik transistor kp mikroelektronik datenblattsammlung "halbleiterwerk frankfurt" KP306a mikroelektronik DDR
    Text: . • M ' - l ä r o u jk 1 U ’i m - í!Í'.>. "lA T T S A M M . 'Q elektronische Bauelemente IWT iO 1/87 I# %# S Die vorliegenden Datenblätter dienen nur zur Information« Sie beinhalten Informationen über Halbleiterbauelemente des in den Listen elektronischer Bauelemente eingestuften Sortiments«


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    KT368A

    Abstract: KT382aM KT382A kt399a KT325B KT201A KT371A KT-316 KT368AM kt382
    Text: TRANSISTORS Mfi Electron Device Mfg. Corp. M E A N -F R E Q U E N C Y T R A N S IS T O R S T ype p *m «x' mW It M Hz N o is e F a c to r R ated V a lu e s T em p e­ ra tu re R a n g e. ^CbOmax' •c V ^C E m ax' V U E B m tx » V ^C m ir mA KT201A KT201AM


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    PDF KT201A KT201AM KT201B KT20IBM KT20IB KT201T KT201TM KT20I KT368A KT382aM KT382A kt399a KT325B KT371A KT-316 KT368AM kt382

    BF410C

    Abstract: a5175
    Text: asc » • fl23SbQS 000447*1 1 « S I E G . 7^3/-Z.S^ Low-Noise N-channel Junction Field-Effect Transistor for RF Applications D 79 SIEMENS AKTI EN GE SE LLS CH AF BF 410 A BF 410 B BF 410 C BF 410 D BF 4 1 0 A, B, C, and D are asymmetric epitaxial planar N-channel junction field-effect


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    PDF fl23SbQS Q68000-A5440 68000-A5172 68000-A5173 68000-A5174 68000-A5175 0Q044 BF410D BF410C a5175

    IDCL25S

    Abstract: H2R09RA28B-2 c22s
    Text: CROSS REFERENCE This list shows competitors-to-NorComp equivalent parts for the most popular D-sub connectors NorComp manufactures more equivalents than these listed, both to these competitors and others. Please contact us for assistance in determining equivalent parts. We can usually help you over the phone. Call us or fax us a sketch!


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    PDF HD-C22S LHD-C22S C20S-30 LC20S-30 LC20S 15P5B-5K2 15S5B-5K2 50P5B-5K2 50S5B-5K2 50P5B-5K3 IDCL25S H2R09RA28B-2 c22s

    transistor BF 245

    Abstract: bf 245 BF245 transistor BF245 transistor BF 245 c transistor BF245 A BF245 canal n BF245 TRANSISTOR BF 245 C transistor Bf-245
    Text: BF245 FIELD EFFECT TRANSISTOR, SILICON, N CHANNEL TRANSISTOR A EFFE T DE CHAMP, SILICIUM , CANAL N - LF and HF amplification Vos 30 V max IDSS 2 . 25 mA .Vg s = 0 in 3 groups Amplification BF et H F en 3 groupes 1,1 pF typ. C12S Plastic case F 139 B — See outline drawing CB-76 on last pages


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    PDF BF245 CB-76 C22ss 300/is transistor BF 245 bf 245 BF245 transistor BF245 transistor BF 245 c transistor BF245 A BF245 canal n BF245 TRANSISTOR BF 245 C transistor Bf-245

    Untitled

    Abstract: No abstract text available
    Text: F IE L D -E F F E C T T R A N S IS T O R , S IL IC O N . N C H A N N E L *2N4416A TR A N S IS T O R A E F F E T D E C H AM P, S IL IC IU M . C A N A L N Preferred device D isp o sitif recommandé - H F amplification A m p lific a tio n H F 30 V min 2N 4416


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    TIS43

    Abstract: equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent
    Text: The Transistor and Diode Data Book for Design Engineers Volume II Northern European Edition IMPORTANT NOTICES Texas Instrum ents Ltd ., reserves the rig h t to make changes at any tim e in order to improve design and to supply the best p ro d u c t possible.


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    PDF 2S301 BS9300-C-598 2S305 BS9300-C-366 2S307 2S322 CV7396 BS9300-C-396 CV7647 BS9300-C-647 TIS43 equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent

    csi 93c46

    Abstract: LC502 20pmt04a IC565 ycl 20PMT04A
    Text: - l 3 VER: 0 . 1 _ K ^ v J !U 334280110 F OR Q U IC K S T A R T M O D E 50 0M H z 45 0M H z 40 0M H z VC C C U f' STt*v . Ü R237 R34 10K 10K = ^ S 'JM P ,. 13 - X J2 _ _ _ -< < rC s D *‘ “r i i - siz e D o c u m e n t Numbe> C PU _A 1 60V 1 60V 1 35 V


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    PDF 20PMT04A N2907 2N7002 csi 93c46 LC502 IC565 ycl 20PMT04A

    high power Triode for induction heating

    Abstract: BRIMAR general electric valve data 4043 POWER TRIODE cold cathode thyratron 4228A BS448 cathode ray x ray filament transformer Vacuum Tube 300B
    Text: Standard Valves Standard Telephones and Cables Limited V A L V E D IV IS IO N C O N N A U G H T HOUSE, A L D W Y C H , L O N D O N , W .C .2 Telephone : Holborn 8765 Telegrams “ Relay, Telex, London” PRICE Septem ber, 1947 15/- A_I Standard Telephones and Cables Limited


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    PDF G240/2A V230C/ID high power Triode for induction heating BRIMAR general electric valve data 4043 POWER TRIODE cold cathode thyratron 4228A BS448 cathode ray x ray filament transformer Vacuum Tube 300B

    IC 7447

    Abstract: "halbleiterwerk frankfurt" IC 7495 dioda by 238 SYk 04 vergleichsliste BY 235 D147d IC 7474 ic 74193
    Text: eiecrronic Halbleiter-Bauelemente Vergleichsliste Hersteller Bi BA Bi Bi Bi Bi Bi Bi 100 103 106 116 127 147/25 147/50 152 i E S 8 Ti 8 T. T Se B i 152 Hl B i 170 B i 177 B i 178 B i 1«B BA 187 B i 204 B i 216 B i 217 B i 216 B i 219 B i 220 BA 221 B i 222


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    c225 diode smd

    Abstract: CY7C225-40PC 88518 Programming CY7C225 CY7C225-25DC R1250 CY7C225-30LC
    Text: r» 4bE D YPRESS SEMICONDUCTOR • ESA^bbE O O D k ? ^ □ ■ CYP "TM lö -13 CY7C225 ~Z7 r ^ v p p r 'c c 512 x 8 Registered PROM C M O S fo r o p tim u m speed/pow er • Slim 300-m il, 2 4-pin p lastic o r h e r­ m etic DIP, 2 8-pin LCC, o r 28-pin PL C C


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    PDF aaDk744 TMt-13 CY7C225 300-mil, 24-pin 28-pin CY7C225-30DMB CY7C225â 30LMB c225 diode smd CY7C225-40PC 88518 Programming CY7C225 CY7C225-25DC R1250 CY7C225-30LC

    Untitled

    Abstract: No abstract text available
    Text: HITACHI PF0147 MOS FET Power Amplifier Module for GSM Handy Phone HITACHI ADE-208-322D Z 5th. Edition June, 1996 Application For G SM class4 890 to 915M H z. Features • 2stage am plifier


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    PDF PF0147 ADE-208-322D

    BF256

    Abstract: BF 256 BF256C BF246 bf256b BF 246B BF 246 ELLS 110 BF246A BF246C
    Text: 2SC D • S23SbOS Q Q tm tiH T « S I E Ö N-Channel Junction Field-Effect Transistors 25C 04-464SIEMENS AKTIENGESELLSCHAF D BF 246 A B F246B B F246C BF 24 6 A, B, and C are N-channel junction field-effect transistors in plastic package similar to TO 92 10 A 3 DIN 41868 . They are particularly suitable for RF amplifiers.


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    PDF 023SbOS BF246B BF246C Q62702-F219 Q62702-F393 Q62702-F254 Q62702-F250 127mm BF256A BF2S68 BF256 BF 256 BF256C BF246 bf256b BF 246B BF 246 ELLS 110 BF246A BF246C