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Analog Devices Inc LTC2983HLX-PBF MULTI SENSOR HIGH ACCURACY DIGIT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	LTC2983HLX-PBF	Tray	222		1	1 $56.78 10 $44.147 100 $37.9375 1000 $37.9375 10000 $37.9375	Buy Now
Analog Devices Inc LTC2983CLX-PBF IC SENSOR THERMAL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	LTC2983CLX-PBF	Tray	218		1	1 $45.07 10 $34.534 100 $29.25013 1000 $28.675 10000 $28.675	Buy Now
Analog Devices Inc LTC2983ILX-PBF IC SENSOR THERMAL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	LTC2983ILX-PBF	Tray	110		1	1 $50.56 10 $39.027 100 $33.24375 1000 $32.975 10000 $32.975	Buy Now
Diotec Semiconductor AG 2SC2983 BJT DPAK 160V 1500MA NPN
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SC2983	Bulk			2,500	1 - 10 - 100 - 1000 - 10000 $0.17628	Buy Now
Mouser Electronics	2SC2983		4,251			1 $0.61 10 $0.484 100 $0.29 1000 $0.283 10000 $0.159	Buy Now
TME	2SC2983		2,370		1	1 $0.446 10 $0.372 100 $0.297 1000 $0.201 10000 $0.186	Buy Now
Diotec Semiconductor AG 2SC2983-AQ BJT DPAK 160V 1500MA NPN
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SC2983-AQ	Bulk			25,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

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C2983 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
C2983 Abstract: C2983Y KTC2983D marking K Text: SEMICONDUCTOR C2983D MARKING SPECIFICATION DPAK PACKAGE 1. Marking method Laser Marking or Ink Marking 2. Marking K C2983 Y 016 No. Item Marking Description 1 KEC K KEC CORP. 2 Device Name C2983 C2983D 3 hFE Grade Y O,Y 4 Lot No. 016 00.12.27 Revision No :	Original	PDF	KTC2983D C2983 C2983 C2983Y KTC2983D marking K
C2983 Abstract: hFE kec KTC2983L C2983Y Text: SEMICONDUCTOR C2983L MARKING SPECIFICATION IPAK PACKAGE 1. Marking method Laser Marking or Ink Marking 2. Marking K C2983 Y 016 No. Item Marking Description 1 KEC K KEC CORP. 2 Device Name C2983 C2983L 3 hFE Grade Y O,Y 4 Lot No. 016 00.12.27 Revision No :	Original	PDF	KTC2983L C2983 C2983 hFE kec KTC2983L C2983Y
C2983 Abstract: No abstract text available Text: C2983 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process C2983 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 100 MHz (typ.) • Complementary to 2SA1225 Unit: mm Absolute Maximum Ratings (Ta = 25°C)	Original	PDF	2SC2983 2SA1225 C2983
C2983 Abstract: 2SC2983 2SA1225 Text: C2983 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process C2983 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 100 MHz (typ.) · Complementary to 2SA1225 Unit: mm Maximum Ratings (Ta = 25°C)	Original	PDF	2SC2983 2SA1225 C2983 2SC2983 2SA1225
C2983 Abstract: 2SA1225 2SC2983 Text: C2983 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process C2983 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 100 MHz (typ.) • Complementary to 2SA1225 Unit: mm Absolute Maximum Ratings (Ta = 25°C)	Original	PDF	2SC2983 2SA1225 C2983 2SA1225 2SC2983
C2983 Abstract: 2SA1225 2SC2983 Text: C2983 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process C2983 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 100 MHz (typ.) • Complementary to 2SA1225 Unit: mm Maximum Ratings (Ta = 25°C)	Original	PDF	2SC2983 2SA1225 C2983 2SA1225 2SC2983
C2983 Abstract: 2SA1225 2SC2983 Text: C2983 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process C2983 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 100 MHz (typ.) • Complementary to 2SA1225 Unit: mm Absolute Maximum Ratings (Ta = 25°C)	Original	PDF	2SC2983 2SA1225 C2983 2SA1225 2SC2983
C2983 Abstract: 2SC2983 2SA1225 Text: C2983 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process C2983 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 100 MHz (typ.) • Complementary to 2SA1225 Unit: mm Maximum Ratings (Ta = 25°C)	Original	PDF	2SC2983 2SA1225 C2983 2SC2983 2SA1225
Untitled Abstract: No abstract text available Text: C2983 シリコンNPNエピタキシャル形 PCT方式東芝トランジスタ C2983 ○ 電力増幅用 ○ 励振段電力増幅用単位: mm • トランジジョン周波数が高い。: fT = 100 MHz (標準) • 2SA1225 とコンプリメンタリになります。	Original	PDF	2SC2983 2SA1225
C2335 Abstract: C2331 C2458 C2491 C2314E C2021E C2275 C2271 C2987 C2499 Text: ADS 1.2 Build Tools - Errors and Warnings Release 1.2 - 2nd September 2003 Introduction This document illustrates the errors and warning messages that are generated by the Build Tools of ARM Developer Suite ADS version 1.2 and the RealView Compilation Tools (RVCT) version 1.2. Many of	Original	PDF	an104 L6875W: C2335 C2331 C2458 C2491 C2314E C2021E C2275 C2271 C2987 C2499
c2983 Abstract: No abstract text available Text: C2983 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process C2983 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 100 MHz (typ.) • Complementary to 2SA1225 Unit: mm Maximum Ratings (Ta = 25°C)	Original	PDF	2SC2983 2SA1225 c2983
C2983 Abstract: 2SC2983 2SA1225 Text: C2983 シリコンNPNエピタキシャル形 PCT方式東芝トランジスタ C2983 ○ 電力増幅用 ○ 励振段電力増幅用単位: mm • トランジジョン周波数が高い。: fT = 100 MHz (標準) • 2SA1225 とコンプリメンタリになります。	Original	PDF	2SC2983 2SA1225 20070701-JA C2983 2SC2983 2SA1225
C2983 Abstract: No abstract text available Text: C2983 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process C2983 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 100 MHz (typ.) • Complementary to 2SA1225 Unit: mm Absolute Maximum Ratings (Ta = 25°C)	Original	PDF	2SC2983 2SA1225 C2983