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onsemi MOC3072SR2VM 6PW RP TRIAC T&R VDE
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MOC3072SR2VM	Digi-Reel	1,520		1	1 $1.5 10 $0.947 100 $1.5 1000 $0.64388 10000 $0.64388	Buy Now
	MOC3072SR2VM	Cut Tape	1,520		1	1 $1.62 10 $1.023 100 $1.62 1000 $0.60116 10000 $0.60116	Buy Now
	MOC3072SR2VM	Reel	1,000		1,000	1 - 10 - 100 - 1000 $0.56455 10000 $0.48408	Buy Now
Mouser Electronics	MOC3072SR2VM		881			1 $1.54 10 $0.975 100 $0.71 1000 $0.545 10000 $0.473	Buy Now
Newark	MOC3072SR2VM	Bulk			1,000	1 - 10 - 100 - 1000 $0.623 10000 $0.488	Buy Now
Avnet Silica	MOC3072SR2VM		3,000	16 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	MOC3072SR2VM			17 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

New Advantage Corporation	MOC3072SR2VM		2,000		1	1 - 10 - 100 - 1000 $0.787 10000 $0.7282	Buy Now
onsemi MOC3072SVM 6PW RP TRIAC SMD VDE
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MOC3072SVM	Tube	1,199		1	1 $1.89 10 $1.89 100 $1.89 1000 $0.68434 10000 $0.59208	Buy Now
Mouser Electronics	MOC3072SVM		1,000			1 $1.88 10 $0.945 100 $0.863 1000 $0.675 10000 $0.592	Buy Now
Newark	MOC3072SVM	Bulk			1	1 $1.92 10 $1.23 100 $0.904 1000 $0.683 10000 $0.62	Buy Now
Avnet Silica	MOC3072SVM			16 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	MOC3072SVM			17 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Picker Components PC307-24G-X RELAY GEN PURPOSE SPDT 1A 24V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	PC307-24G-X	Tube	1,175		1	1 $1.43 10 $1.43 100 $1.0726 1000 $0.83426 10000 $0.80446	Buy Now
onsemi MOC3072SM 6-PIN DIP RAND. PHASE TRIAC OUTP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MOC3072SM	Bulk	920		1	1 $1.44 10 $0.909 100 $1.44 1000 $0.50904 10000 $0.46177	Buy Now
Mouser Electronics	MOC3072SM		1,538			1 $1.43 10 $0.909 100 $0.672 1000 $0.451 10000 $0.451	Buy Now
Newark	MOC3072SM	Bulk			1,000	1 - 10 - 100 - 1000 $0.598 10000 $0.468	Buy Now
Rochester Electronics	MOC3072SM		58		1	1 $0.5 10 $0.5 100 $0.47 1000 $0.425 10000 $0.425	Buy Now
TME	MOC3072SM				1	1 $1.631 10 $0.902 100 $0.69 1000 $0.595 10000 $0.577	Get Quote

Avnet Silica	MOC3072SM			16 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	MOC3072SM			17 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
onsemi MOC3072TVM OPTO TRIAC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MOC3072TVM	Tube	920		1	1 $1.75 10 $1.114 100 $1.75 1000 $0.62262 10000 $0.53634	Buy Now
Mouser Electronics	MOC3072TVM		401			1 $1.53 10 $0.971 100 $0.703 1000 $0.596 10000 $0.523	Buy Now
Avnet Silica	MOC3072TVM			16 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	MOC3072TVM		1,000	17 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
New Advantage Corporation	MOC3072TVM		1,000		1	1 - 10 - 100 - 1000 $0.9742 10000 $0.9742	Buy Now

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C3072 Datasheets (4)

Part	Manufacturer	Description	Datasheet Type	PDF
C30723G	PerkinElmer Optoelectronics	Ingaas Pin Large-area 900 NM to 1700 NM	Original	PDF
C30723GH	Excelitas Technologies	INGAAS PIN, 5MM, TO-8 PACKAGE	Original	PDF
C30724P	EG&G	LOW COST SILICON AVALANCHE PHOTODIODE (Plastic Encapsulated Package)	Scan	PDF
C30724PH	Excelitas Technologies	Sensors, Transducers - Optical Sensors - Photodiodes - PHOTODIODE APD TO-18 PLASTIC	Original	PDF

C3072 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
c3072 Abstract: line filter 6.8mH C307-2 Text: C3072 REV A Product Description 6.8mH Ringing Filter Inductor Customer Terminal #1 Indicator EIA date code and lot code A COEV C3072 XXXXX [9.91 MAX] 0.390 MAX Coplanar with surface A +0.006"/-0.000" 0.40 .016REF 1 8 2 7 3 6 4 5 [11.05 MAX] 0.435 MAX [9.14 MAX]	Original	PDF	C3072 C3072 016REF 10kHz, 100mVAC, 100mADC, 100kHz, line filter 6.8mH C307-2
Untitled Abstract: No abstract text available Text: PhotodiodeS฀For฀hiGh-PerFormAnce฀APPlicAtionS฀ Right: TO-C30737PH Series T-1¾ TO-like hrough-Hole Package (4.9 mm Diameter) Let: C30737LH Series Leadless Ceramic Carrier Package (3 x 3 mm2) C30737 High Speed, Low Voltage APD – C30724 Low Temperature Coeficient APD	Original	PDF	O-C30737PH C30737LH C30737 C30724 Standard-90 C30737PH-500-90 C30737LH-500-90 C30737LH-500-92
c3072 Abstract: hFE kec KTC3072L marking K 00 Marking C307-2 Text: SEMICONDUCTOR C3072L MARKING SPECIFICATION IPAK PACKAGE 1. Marking method Laser Marking or Ink Marking 2. Marking K C3072 Y 016 No. Item Marking Description 1 KEC K KEC CORP. 2 Device Name C3072 C3072L 3 hFE Grade Y O,Y,GR 4 Lot No. 016 00.12.27 Revision No :	Original	PDF	KTC3072L C3072 c3072 hFE kec KTC3072L marking K 00 Marking C307-2
c3072 Abstract: KTC3072D Text: SEMICONDUCTOR C3072D MARKING SPECIFICATION DPAK PACKAGE 1. Marking method Laser Marking or Ink Marking 2. Marking K C3072 Y 016 No. Item Marking Description 1 KEC K KEC CORP. 2 Device Name C3072 C3072D 3 hFE Grade Y O,Y,GR 4 Lot No. 016 00.12.27 Revision No :	Original	PDF	KTC3072D C3072 c3072 KTC3072D
smd t1A Abstract: t1A 13 Text: Photodiodes for High-Performance Applications Avalanche Right: TO-C30737PH Series T-1¾ TO-like Through-Hole Package (4.9 mm Diameter) P hotodiodes for Range Left: C30737LH Series Leadless Ceramic Carrier Package (3 x 3 mm2) F inding Applications C30737 High Speed, Low Voltage APD – C30724 Low Temperature Coefficient APD	Original	PDF	O-C30737PH C30737LH C30737 C30724 C3072490 C30737PH-500-90 C30737LH-500-90 C30737LH-500-92 C30724EH smd t1A t1A 13
Untitled Abstract: No abstract text available Text: C3072 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process C3072 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain : hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A) •	Original	PDF	2SC3072
C1383 NPN transistor collector base and emitter Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383 Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,	Original	PDF	10-foot C1383 NPN transistor collector base and emitter NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
FND-100Q Abstract: FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q Si apd photodiode nir emitter leds with 700 to 900 nm SPCM-AQR C30950E Text: High-performance emitters & detectors for the most demanding applications PerkinElmer Optoelectronics PerkinElmer Optoelectronics provides Sensor, Lighting and Digital Imaging technologies to speed the development of breakthrough applications for customers in industrial, safety & security, consumer and biomedical markets.	Original	PDF	CAT0506P FND-100Q FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q Si apd photodiode nir emitter leds with 700 to 900 nm SPCM-AQR C30950E
MAX8770 Abstract: ICS954310 motherboard samsung ba41 MDB41 PC87541 QUANTA C3229 C3198 PC87541 sil3512 quanta Text: 1 2 3 4 5 CPU Yonah/Merom 478 PIN micro FC-PGA 1 RJ9 Block Diagram P3,4 14.318MHz FSB 667 MHz(166X4) A LVDS LCD A LVDS P7 CLOCK GEN DDRII 400/533/667 Calistoga DVI M56 UNBUFFERED DDRII SODIMM CRT P11 P2 P12 945GM/PM R/G/B ICS954310 R/G/B 1466 PIN (micro FCBGA)	Original	PDF	318MHz 166X4) ICS954310 945GM/PM P5-10 16Lanes P36-40 88E8053 ALC260 TI-TPA6011A4 MAX8770 ICS954310 motherboard samsung ba41 MDB41 PC87541 QUANTA C3229 C3198 PC87541 sil3512 quanta
C3072 Abstract: 2SC3072 c3072 npn Text: C3072 シリコンNPNエピタキシャル形 PCT方式東芝トランジスタ C3072 ○ ストロボフラッシュ用 ○ 中電力増幅用 • 単位: mm 直流電流増幅率が高い。 : hFE = 140~450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (最小) (VCE = 2 V, IC = 4 A)	Original	PDF	2SC3072 C3072 2SC3072 c3072 npn
C3072 Abstract: c3072 npn 2SC3072 Text: C3072 シリコンNPNエピタキシャル形 PCT方式東芝トランジスタ C3072 ○ ストロボフラッシュ用 ○ 中電力増幅用 • 単位: mm 直流電流増幅率が高い。 : hFE = 140~450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (最小) (VCE = 2 V, IC = 4 A)	Original	PDF	2SC3072 20070701-JA C3072 c3072 npn 2SC3072
PGEW 3S09 Abstract: C30724 PerkinElmer Optoelectronics 3S09 PGEW 1S03 laser diode 905nm 905nm Plastic Pulsed Laser Diode LO-081 2S09 PGEW2S09 Text: Optoelectronics Description Applications The PGEW series employs an advanced multiple quantum well laser diode chip design producing high peak output power at low drive current. Peak wavelength is centered near the maximum responsivity of most silicon photodiodes including PerkinElmer	Original	PDF	C30724 905nm lO-0812/03 PGEW 3S09 PerkinElmer Optoelectronics 3S09 PGEW 1S03 laser diode 905nm 905nm Plastic Pulsed Laser Diode LO-081 2S09 PGEW2S09
Untitled Abstract: No abstract text available Text: D A T A S H E DPGEW & TPGEW Series 905 nm Pulsed Laser Diodes E S E N S O R S O LUTI O N S Multi EPI-Cavity Plastic Lasers T Overview The double DPEW and triple (TPGEW) EPI-cavity structures are 905 nm pulsed lasers in low cost plastic encapsulated packages. These package types complement PerkinElmer's	Original	PDF	DTS1107
laser diode 905nm Abstract: C30724 EXCELITAS LIDAR pgew1s09 3S09 PGEW 2S09 PGEW 1S09 2S09 PGEW2S09 Text: PGEW Series 905nm Plastic Pulsed Laser Diode Description Applications The PGEW series employs an advanced multiple quantum well laser diode chip design producing high peak output power at low drive current. Peak wavelength is centered near the maximum responsivity of	Original	PDF	905nm C30724 lO-0812/03 laser diode 905nm EXCELITAS LIDAR pgew1s09 3S09 PGEW 2S09 PGEW 1S09 2S09 PGEW2S09

2SC3072 Abstract: C3072 Text: C3072 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process C3072 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain : hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A) •	Original	PDF	2SC3072 2SC3072 C3072
c3072 Abstract: 2SC3072 c3072 npn Text: C3072 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process C3072 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain : hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A) •	Original	PDF	2SC3072 c3072 2SC3072 c3072 npn
c3072 Abstract: 2SC3072 c3072 npn Text: C3072 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process C3072 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain : hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A) ·	Original	PDF	2SC3072 c3072 2SC3072 c3072 npn
c3072 Abstract: c3072 npn 2SC3072 Text: Transistors SMD Type Silicon NPN Epitaxial C3072 TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 High DC current gain. +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1	Original	PDF	2SC3072 O-252 C3072 c3072 c3072 npn 2SC3072
Untitled Abstract: No abstract text available Text: C3072 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process C3072 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain : hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A) •	Original	PDF	2SC3072
c3072 npn Abstract: c3072 Text: C3072 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process C3072 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain : hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A) •	Original	PDF	2SC3072 c3072 npn c3072
2SC3072 Abstract: C3072 Text: C3072 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process C3072 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain : hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A) •	Original	PDF	2SC3072 2SC3072 C3072
c3207 Abstract: C3331 c3206 C3374 C3478 C3507 c3355 C3502 Toshiba C3388 c3320 Text: CR-1 8 7 6 5 3 4 2 1 REVISIONS ZONE DESCRIPTION LTR DATE APPR. SONY PROPRIETARY INFORMATION F F SONY CONFIDENTIAL IRX-3130 E SCHEMATICS E TV TUNER BOARD ENX-31 TABLE OF CONTENTS BLOCK TITLE D PAGE REF.NO. DESCRIPTIONS 1 XXXX - XXXX INDEX THIS PAGE HISTORY	Original	PDF	IRX-3130 ENX-31 RB3557 RB3600 RB3601 RB3602 RB3603 RB3610 RB3611 RB3612 c3207 C3331 c3206 C3374 C3478 C3507 c3355 C3502 Toshiba C3388 c3320
EG*G Optoelectronics Abstract: C30724 C30724P EG&G VS289 MIL-Q-9858A Si apd photodiode 800 nm EG&G optoelectronics apd bias 200v eg&g HUV-1100 Text: J^E G S G CANADA AN OPTOELECTRONICS GROUP COMPANY SÌ APD Package 04-22-97) C30724P Features: 3.25/3.17 ( 0 . 1 2 8 ) / ( 0 .125) 3_ 1 .0 2 (0.040) CATHODE cxzzr 3 t = I J . 2.54 ( 0 . 100 ) ANODE 0 .4 6 -c	OCR Scan	PDF	C30724P 900nm C30724P EG*G Optoelectronics C30724 EG&G VS289 MIL-Q-9858A Si apd photodiode 800 nm EG&G optoelectronics apd bias 200v eg&g HUV-1100
Tr431 Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76 Text: I RJ 1 international, rectifier IR R e p la c e m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 700 21012 AA200	OCR Scan	PDF	25T12 Z1012 Z1014 Z1018 AA138 AA140 AA142 AA200 AA21Q AA300 Tr431 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76

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onsemi MOC3072SR2VM

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C3072 Datasheets (4)

C3072 Datasheets Context Search

c3072

Untitled

c3072

c3072

smd t1A

Untitled

C1383 NPN transistor collector base and emitter

FND-100Q

MAX8770

C3072

C3072

PGEW 3S09

Untitled

laser diode 905nm

2SC3072

c3072

c3072

c3072

Untitled

c3072 npn

2SC3072

c3207

EG*G Optoelectronics

Tr431