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    C3072 NPN Search Results

    C3072 NPN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3083Z-G Rochester Electronics LLC CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY Visit Rochester Electronics LLC Buy
    CA3046 Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN Visit Rochester Electronics LLC Buy
    ISL73096EHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation

    C3072 NPN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    c3072

    Abstract: c3072 npn 2SC3072
    Text: Transistors SMD Type Silicon NPN Epitaxial 2SC3072 TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 High DC current gain. +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1


    Original     		PDF 2SC3072 O-252 C3072 c3072 c3072 npn 2SC3072

    Untitled

    Abstract: No abstract text available
    Text: 2SC3072 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3072 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain : hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A) •


    Original     		PDF 2SC3072

    c3072

    Abstract: 2SC3072 c3072 npn
    Text: 2SC3072 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3072 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain : hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A) •


    Original     		PDF 2SC3072 c3072 2SC3072 c3072 npn

    c3072

    Abstract: 2SC3072 c3072 npn
    Text: 2SC3072 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3072 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain : hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A) ·


    Original     		PDF 2SC3072 c3072 2SC3072 c3072 npn

    c3072 npn

    Abstract: c3072
    Text: 2SC3072 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3072 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain : hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A) •


    Original     		PDF 2SC3072 c3072 npn c3072

    Untitled

    Abstract: No abstract text available
    Text: 2SC3072 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3072 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain : hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A) •


    Original     		PDF 2SC3072

    2SC3072

    Abstract: C3072
    Text: 2SC3072 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3072 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain : hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A) •


    Original     		PDF 2SC3072 2SC3072 C3072

    2SC3072

    Abstract: C3072
    Text: 2SC3072 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3072 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain : hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A) •


    Original     		PDF 2SC3072 2SC3072 C3072

    C3072

    Abstract: c3072 npn 2SC3072
    Text: 2SC3072 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC3072 ○ ストロボフラッシュ用 ○ 中電力増幅用 • 単位: mm 直流電流増幅率が高い。 : hFE = 140~450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (最小) (VCE = 2 V, IC = 4 A)


    Original     		PDF 2SC3072 20070701-JA C3072 c3072 npn 2SC3072

    C3072

    Abstract: 2SC3072 c3072 npn
    Text: 2SC3072 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC3072 ○ ストロボフラッシュ用 ○ 中電力増幅用 • 単位: mm 直流電流増幅率が高い。 : hFE = 140~450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (最小) (VCE = 2 V, IC = 4 A)


    Original     		PDF 2SC3072 C3072 2SC3072 c3072 npn

    Tr431

    Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
    Text: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200


    OCR Scan     		PDF 25T12 Z1012 Z1014 Z1018 AA138 AA140 AA142 AA200 AA21Q AA300 Tr431 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76