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    Excelitas Technologies Corporation C30902EH-2

    SENSOR PHOTODIODE 900NM TO18
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    DigiKey C30902EH-2 Box 50
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    Excelitas Technologies Corporation C30902EH

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    C30902E Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    C30902E PerkinElmer Optoelectronics Silicon Avalanche Photodiodes Original PDF
    C30902E EG&G Optoelectronics High Speed Solid State Detectors for Fibre Optic and Very Low Light Level Apps Scan PDF
    C30902EH Excelitas Technologies SI APD 0.5MM HIGH RESPONSE TO-18 Original PDF
    C30902EH-2 Excelitas Technologies SI APD, 0.5MM, TO-18 HIGH RESPON Original PDF

    C30902E Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    C30902SH-DTC

    Abstract: C30902EH PerkinElmer Avalanche Photodiode APD, laser, range, finder C30902 geiger apd C30902SH PerkinElmer mode a C3092SH-TC PerkinElmer trigger mode
    Text: Introduction PerkinElmer Type C30902EH avalanche photodiode is fabricated with a doublediffused “reach-through” structure. This structure provides high responsivity between 400 and 1000 nm as well as extremely fast rise and fall times at all wavelengths. The responsivity of the


    Original     		C30902EH C30921EH C30902SH-DTC PerkinElmer Avalanche Photodiode APD, laser, range, finder C30902 geiger apd C30902SH PerkinElmer mode a C3092SH-TC PerkinElmer trigger mode PDF

    C30902S

    Abstract: C30902E geiger PerkinElmer Avalanche Photodiode geiger counter C30921E avalanche photodiode c30902e PerkinElmer trigger avalanche photodiode bias C30921S
    Text: Description Silicon Avalanche Photodiodes PerkinElmer Type C30902E avalanche C30902E, C30902S, C30921E, C30921S EVERYTHING High Speed Solid State Detectors for Fiber Optic and Very Low Light-Level Applications IN A photodiode utilizes a silicon detector chip


    Original     		C30902E C30902E, C30902S, C30921E, C30921S C30902S geiger PerkinElmer Avalanche Photodiode geiger counter C30921E avalanche photodiode c30902e PerkinElmer trigger avalanche photodiode bias C30921S PDF

    C30902EH

    Abstract: No abstract text available
    Text: Silicon Avalanche Photodiodes C30902 Series High Speed APDs for Analytical and Biomedical Lowest Light Detection Applications Overview Features and Benefits Excelitas’ C30902EH avalanche photodiode is fabricated with a doublediffused “reach-through” structure. This


    Original     		C30902 C30902EH C30921EH DTS0408 PDF

    Untitled

    Abstract: No abstract text available
    Text: DATASHEET Photon Detection C30902 and C30921 Series High-speed solid state detectors for low light level applications Key Features • High quantum efficiency: 77% typical at 830 nm  C30902SH and C30921SH can be operated in Geiger mode  C30902EH/SH-2 version with


    Original     		C30902 C30921 C30902SH C30921SH C30902EH/SH-2 C30902BH C30902EH PDF

    C30902EH

    Abstract: C30902SH-DTC PerkinElmer Avalanche Photodiode geiger apd avalanche photodiodes geiger C30902 APD, laser, range, finder avalanche photodiode ghz C30921EH
    Text: High Speed APDs for Analytical and Biomedical Lowest Light Detection Applications Overview PerkinElmer’s C30902EH avalanche photodiode is fabricated with a doublediffused “reach-through” structure. This structure provides high responsivity between 400 and 1000 nm as well as


    Original     		C30902EH C30921EH DTS0408 C30902SH-DTC PerkinElmer Avalanche Photodiode geiger apd avalanche photodiodes geiger C30902 APD, laser, range, finder avalanche photodiode ghz PDF

    C30817E

    Abstract: datasheet apd 1550
    Text: PerkinElmer’s C30659 Series includes a Silicon or InGaAs Avalanche Photodiode with a hybrid preamplifier. It is supplied in a single modified 12-lead TO-8 package. The avalanche photodiodes used in these devices are the C30817EH, C30902EH, C30954EH, C30956EH,


    Original     		C30659 12-lead C30817EH, C30902EH, C30954EH, C30956EH, C30645EH C30662EH, C30950 C30817E datasheet apd 1550 PDF

    C1383 NPN transistor collector base and emitter

    Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
    Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,


    Original     		10-foot C1383 NPN transistor collector base and emitter NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383 PDF

    FND-100Q

    Abstract: FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q Si apd photodiode nir emitter leds with 700 to 900 nm SPCM-AQR C30950E
    Text: High-performance emitters & detectors for the most demanding applications PerkinElmer Optoelectronics PerkinElmer Optoelectronics provides Sensor, Lighting and Digital Imaging technologies to speed the development of breakthrough applications for customers in industrial, safety & security, consumer and biomedical markets.


    Original     		CAT0506P FND-100Q FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q Si apd photodiode nir emitter leds with 700 to 900 nm SPCM-AQR C30950E PDF

    diode d1n914

    Abstract: d1n914 DIODE d1n914 C30817E C30659-1550-R2A InGaas PIN photodiode, 1550 NEP C30950 Silicon and InGaAs APD Preamplifier Modules C30954E avalanche photodiode 1550nm sensitivity
    Text: 117142_C30659.qxd 6/21/04 2:33 PM Page 1 Preliminary Data Sheet C30659-900-1060-1550nm Series Silicon and InGaAs APD Preamplifier Modules Applications Range Finding LIDAR Featur es System bandwidth 50 MHz and 200 MHz Ultra low noise equivalent power NEP


    Original     		C30659 C30659-900-1060-1550nm 1100nm 1700nm 12-lead C30817com. diode d1n914 d1n914 DIODE d1n914 C30817E C30659-1550-R2A InGaas PIN photodiode, 1550 NEP C30950 Silicon and InGaAs APD Preamplifier Modules C30954E avalanche photodiode 1550nm sensitivity PDF

    C30902S

    Abstract: C30817E C30817 C30955EH
    Text: Photodiodes for High-Performance Applications Avalanche Avalanche Photodiodes Silicon and InGaAs APDs Photodiodes FOR Industrial & ANALYTICAL Applications Avalanche Photodiodes – Silicon and InGaAs APDs Applications • Laser range finder • Scanning video imager


    Original     		C30902EH, C30921EH C30902SH, C30921SH C30902S C30817E C30817 C30955EH PDF

    C30817E

    Abstract: C30955EH
    Text: PhotodiodeS฀For฀hiGh-PerFormAnce฀APPlicAtionS฀ Avalanche Photodiodes Silicon and InGaAs APDs Avalanche Photodiodes – Silicon and InGaAs APDs Applications • Laser range inder • Free space communication Product฀description hese rear entry “reach-through” silicon APDs ofer the best compromise in terms of cost and


    Original     		C30902 C30902EH, C30921EH C30902SH, C30921SH C30817E C30955EH PDF

    Untitled

    Abstract: No abstract text available
    Text: DATASHEET Photon Detection LLAM Series 900/1060/1550/1550E Si and InGaAs Low-Light Analog APD Receiver Modules LLAM Key Features E LLAM-1550E InGasAs APD Preamplifier Modules exhibit enhanced damage threshold and greater resilience when exposed to higher optical power densities.


    Original     		900/1060/1550/1550E LLAM-1550E 12-lead PDF

    C30817E

    Abstract: No abstract text available
    Text: 117142_C30659.qxd 6/21/04 2:33 PM Page 1 Preliminary Data Sheet C30659-900-1060-1550nm Series Silicon and InGaAs APD Preamplifier Modules Applications Range Finding LIDAR Featur es System bandwidth 50 MHz and 200 MHz Ultra low noise equivalent power NEP


    Original     		C30659 C30659-900-1060-1550nm 1100nm 1700nm 12-lead C30om. C30817E PDF

    PerkinElmer Avalanche Photodiode

    Abstract: C30902 C30737EH C30902S PerkinElmer Optoelectronics C30902E avalanche photodiode bias and high voltage C30737E-500 photodiode Avalanche photodiode C30737
    Text: Description The C30737 type avalanche photodiode provides high responsivity between 500nm and 1000nm, as well as extremely fast rise times at all wavelengths with a frequency response up to 1.0 GHz. The active area diameter of the photosensitive surface is 0.5mm.


    Original     		C30737 500nm 1000nm, MIL-STD-883 MIL-STD-750. DTS0206 C30737EH PerkinElmer Avalanche Photodiode C30902 C30737EH C30902S PerkinElmer Optoelectronics C30902E avalanche photodiode bias and high voltage C30737E-500 photodiode Avalanche photodiode PDF

    C30817E

    Abstract: SILICON APD Pre-Amplifier
    Text: DATASHEET Photon Detection C30659 Series 900/1060/1550/1550E Si and InGaAs APD Preamplifier Modules Key Features E C -1550E InGasAs APD Preamplifier Modules exhibit enhanced damage threshold and greater resilience when exposed to higher optical power densities.


    Original     		C30659 900/1060/1550/1550E -1550E C30817EH, C30902EH, C30954EH C30956EH C30645EH C30662EH C30817E SILICON APD Pre-Amplifier PDF

    Untitled

    Abstract: No abstract text available
    Text: E fi 8, G/CANADA/OPTOELEK n c i i 3D3DblG ÜÜÜD12L. 0b3 • CANA T1 1D E le c tro Silicon Avalanche Photodiodes OptiCS C30902E, C30902S, C3 0921E, C30921S DATA SHEET High Speed Solid State Detectors for Fiber Optic and Very Low Light-Level Applications RCA Type C30902E ava­


    OCR Scan     		C30902E, C30902S, 0921E, C30921S C30902E L-571 L-933 C30921E C30902E C30902S PDF

    C30902E

    Abstract: 30902E EG*G Optoelectronics C30902BFC avalanche photodiodes avalanche photodiode C30902 C30921E geiger C3090
    Text: 1 J l E C s 3 * 1 - 3 9 8 C O P TO ELECTR O N ICS C30902E, C30902S, C30921E. C 3 0921S, C30902BST, C30902BFC C c J i7 c iC / < 3 High Speed Solid State Detectors for Fibre Optic and Very Low Light-Level Applications EG&G 30902E avalanche photodiode utilises a silicon


    OCR Scan     		C30902E, C30902S. C30921E. C30921S, C30902BST. C30902BFC 30902E C30902E/S C30921E/S C30902E EG*G Optoelectronics C30902BFC avalanche photodiodes avalanche photodiode C30902 C30921E geiger C3090 PDF

    C30902E

    Abstract: C30921S avalanche photodiode c30902e C30921E C30902 740417 C30902S geiger RCA Transistor rca power transistor
    Text: RCA IO E D I 7MfiMb7S OQOQlSb U | T ' H i - INC/ ELECTRO OPTICS I t C il Silicon Avalanche Photodiodes C30902E, C30902S, C30921E, C3Q921S >?!-»»»'r.-V- D A T A S H E E T High Speed Solid State Detectors for Fiber Optic and Very Low Light-Level Applications


    OCR Scan     		C30902E, C30902S, C30921E, C30921S L-571 L-933 C30902E C30921E C30902S C30921S avalanche photodiode c30902e C30921E C30902 740417 geiger RCA Transistor rca power transistor PDF

    C30902S

    Abstract: diode C309 C30902E rangefinding tr c3090 C30902 DEAD TIME FOR THE DETECTOR C30902 geiger counter C30921E avalanche photodiode bias
    Text: E G & G/CANADA/OPTOELEK I t c / T OptiCS IO T1 Silicon Avalanche Photodiodes 3G3DblD DDGDlEb 0b3 • CANA » C30902E, C30902S, C30921E, C30921S DATA SHEET I High Speed Solid State Detectors for Fiber Optic and Very L o w Lig h t-Le ve l Applications RCA Type C30902E ava­


    OCR Scan     		C30902E, C30902S, C30921E, C30921S L-571 L-933 C30902E C30921E C30902S diode C309 rangefinding tr c3090 C30902 DEAD TIME FOR THE DETECTOR C30902 geiger counter C30921E avalanche photodiode bias PDF

    Untitled

    Abstract: No abstract text available
    Text: G & G/CANADA/OPTOELEK WM • IQ 3D3DL1D 0G000M4 1TÔ io l «CANA Solid State Detectors ~ MW Electro Optics and Devices Developmental Types C30950 Seríes Photodiodes Very Wide Bandpass Silicon Avalanche Photodiode Preamplifier Modules Available With Integral Light Pipes For Fiber Optic


    OCR Scan     		0G000M4 C30950 6x10s 9x10s 9x104 C30950E, C30950F, C30950G PDF

    C30817

    Abstract: photodiode preamplifier C30950E RCA C30817 preamplifier voltage RCA Solid State avalanche photodiodes C30950 equivalent C30902E C30950EL
    Text: C A INC/ ELECTRO OPTICS IDE D I 74A4L.75 000D04M 4 | ItCil */|- Solid State Detectors ~ Electro Optics and Devices Developmental Types C30950 Series Photodiodes Very Wide Bandpass Silicon Avalanche Photodiode Preamplifier Modules Available With Integral Light Pipes For Fiber Optic


    OCR Scan     		74fl4b75 000D044 C30950 6x10s 9x10s 9x104 6084V1 C30817 photodiode preamplifier C30950E RCA C30817 preamplifier voltage RCA Solid State avalanche photodiodes C30950 equivalent C30902E C30950EL PDF

    C30950E

    Abstract: C30817 C30950EL photodiode preamplifier C30950 avalanche photodiode bias avalanche photodiodes C30902E emitter "1060 nm" RCA Solid State
    Text: E G & G/CANADA/OPTOELEK 10 D • Electro Optics and Devices _ 7 “^- *//•' iol 303DL1D 0000044 ITfl ■ CANA R G il Solid State Detectors Developmental Types C30950 Series € Photodiodes Very Wide Bandpass Silicon Avalanche Photodiode Preamplifier Modules


    OCR Scan     		303DL1D C30950 6x10s 9x10s C30950E C30817 C30950EL photodiode preamplifier avalanche photodiode bias avalanche photodiodes C30902E emitter "1060 nm" RCA Solid State PDF

    C30902E

    Abstract: C30904E avalanche photodiodes C30817 C30905E C30908E C30916E
    Text: R C A INC/ ELECTRO OPTICS 10E D • 7484k7S DDDD133 3 | r- Vi-íi C30904E. C30905E. C30908E Silicon Avalanche Photodiodes Developmental Types Silicon Avalanche Photodiodes With Integral Light Pipes — Desigred Especially for Optical Communication Systems


    OCR Scan     		74fl4b75 DDDD133 C30904E, C30905E, C30908E C30902E C30904E avalanche photodiodes C30817 C30905E C30916E PDF

    C30950E

    Abstract: C30950EL C30950 equivalent C30817 30950G RCA Solid State C30950 C30902 C30902E
    Text: ELECTRO OPTICS R C IDE D /1 m Electro O ptics and Devices 3Û741S4 □□OODMM 1 m GEEO _ T ' - H l - io ~ J Solid State Detectors Developmental Types C30950 Series Photodiodes Very Wide Bandpass Silicon Avalanche Photodiode Preamplifier Modules Available With Integral Light Pipes For Fiber Optic


    OCR Scan     		741S4 C30950 6x10s 9x10s 9x104 C30950E C30950EL C30950 equivalent C30817 30950G RCA Solid State C30902 C30902E PDF