Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    C3328 NPN TRANSISTOR Search Results

    C3328 NPN TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation

    C3328 NPN TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    C3328 NPN Transistor

    Abstract: c3328 2SC3328
    Text: 2SC3328 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3328 Power Amplifier Applications Power Switching Applications • Unit: mm Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High-speed switching: tstg = 1.0 µs (typ.) •


    Original     		2SC3328 2SA1315 O-92MOD C3328 NPN Transistor c3328 2SC3328 PDF

    C3328 NPN Transistor

    Abstract: c3328 2SC3328 2SA1315
    Text: 2SC3328 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3328 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High-speed switching: tstg = 1.0 s (typ.) •


    Original     		2SC3328 2SA1315 C3328 NPN Transistor c3328 2SC3328 2SA1315 PDF

    C3328 NPN Transistor

    Abstract: c3328 2SC3328 transistor 2Sa1315 2sc3328
    Text: 2SC3328 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3328 Power Amplifier Applications Power Switching Applications • Unit: mm Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High-speed switching: tstg = 1.0 µs (typ.) •


    Original     		2SC3328 2SA1315 C3328 NPN Transistor c3328 2SC3328 transistor 2Sa1315 2sc3328 PDF

    c3328

    Abstract: C3328 NPN Transistor 2SC3328 2SA1315
    Text: 2SC3328 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3328 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High-speed switching: tstg = 1.0 s (typ.) •


    Original     		2SC3328 2SA1315 c3328 C3328 NPN Transistor 2SC3328 2SA1315 PDF

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


    OCR Scan     		PDF