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    C3665 TRANSISTOR Search Results

    C3665 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    C3665 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    C3665 transistor

    Abstract: c3665 2SC3665 2SC3665 equivalent 2-7D101A 2SA1425
    Text: 2SC3665 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3665 Audio Power Amplifier Applications Driver-Stage Amplifier Applications • Unit: mm Complementary to 2SA1425. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit


    Original
    2SC3665 2SA1425. C3665 transistor c3665 2SC3665 2SC3665 equivalent 2-7D101A 2SA1425 PDF

    C3665 transistor

    Abstract: c3665 2-7D101A 2SA1425 2SC3665
    Text: 2SC3665 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3665 Audio Power Amplifier Applications Driver-Stage Amplifier Applications • Unit: mm Complementary to 2SA1425. Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage


    Original
    2SC3665 2SA1425. C3665 transistor c3665 2-7D101A 2SA1425 2SC3665 PDF

    C3665 transistor

    Abstract: C3665
    Text: 2SC3665 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3665 Audio Power Amplifier Applications Driver-Stage Amplifier Applications • Unit: mm Complementary to 2SA1425. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit


    Original
    2SC3665 2SA1425. 2-7D101A C3665 transistor C3665 PDF

    C3665 transistor

    Abstract: c3665 2SC3665 2-7D101A 2SA1425
    Text: 2SC3665 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3665 Audio Power Amplifier Applications Driver-Stage Amplifier Applications • Unit: mm Complementary to 2SA1425. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit


    Original
    2SC3665 2SA1425. C3665 transistor c3665 2SC3665 2-7D101A 2SA1425 PDF