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C3H marking Abstract: UPC3224TB HS350 marking c1h UPC2712TB c3k cel Text: BIPOLAR ANALOG INTEGRATED CIRCUIT UPC3224TB 5 V, SILICON MMIC WIDEBAND AMPLIFIER DESCRIPTION The µPC3224TB is a silicon monolithic IC designed as IF amplifier for DBS tuners. This IC is manufactured using our 30 GHz fmax UHS0 Ultra High Speed Process silicon bipolar process.	Original	PDF	UPC3224TB PC3224TB PC3224TB-E3 C3H marking UPC3224TB HS350 marking c1h UPC2712TB c3k cel
PC3224TB Abstract: 2F P marking PC321 UPC3227TB PC2712T PC3227TB-E3-A Text: BIPOLAR ANALOG INTEGRATED CIRCUIT UPC3227TB 5 V, SILICON GERMANIUM MMIC WIDEBAND AMPLIFIER DESCRIPTION The PC3227TB is a silicon germanium SiGe monolithic integrated circuit designed as IF amplifier for DBS tuners. This IC is manufactured using our 50 GHz fmax UHS2 (Ultra High Speed Process) SiGe bipolar process.	Original	PDF	UPC3227TB PC3227TB PC3224TB 2F P marking PC321 UPC3227TB PC2712T PC3227TB-E3-A
UPC3227TB Abstract: marking C1G Text: BIPOLAR ANALOG INTEGRATED CIRCUIT UPC3227TB 5 V, SILICON GERMANIUM MMIC WIDEBAND AMPLIFIER DESCRIPTION The µPC3227TB is a silicon germanium SiGe monolithic integrated circuit designed as IF amplifier for DBS tuners. This IC is manufactured using our 50 GHz fmax UHS2 (Ultra High Speed Process) SiGe bipolar process.	Original	PDF	UPC3227TB PC3227TB UPC3227TB marking C1G
balancer battery Abstract: No abstract text available Text: 1 REVISION HISTORY ECO REV - 2 20 4 5 6 7 8 1 1 4 1210 6.3V 1210 6.3V 1210 6.3V C3 2 BATTERY CELL VOLTAGES 2.5V - 4.5V 2.5A 1 V- C4G 2.2nF 5.1 V- 2 OPT C5S 2.2uF 18 1206 470pF 100V 0603 1210 100V 1210 100V 5 6 7 8 1 3 2 1 RS5B 0.016 I5S 20 4 2 20 1206 C4E	Original	PDF	470pF LTC3300 DFLS260 DFLS1100 LTC3300ILXE-1 LTC6803IG-2 balancer battery
transistor smd d9d Abstract: smd transistor r5c transistor SMD a10a 4E smd diode smd transistor d9d DC1652A Text: DEMO MANUAL DC2064A LTC3300-1/LTC6803-2 Bidirectional Cell Balancer DESCRIPTION Demonstration Circuit DC2064A is a bidirectional cell balancer using two LTC 3300-1 ICs to achieve active cell balancing of up to 12 Li-Ion batteries. The board uses the LTC6803-2 multi-cell addressable battery stack monitor to	Original	PDF	DC2064A LTC3300-1/LTC6803-2 DC2064A LTC6803-2 LTC3300-1 DC2064A. LTC6803â DC590B transistor smd d9d smd transistor r5c transistor SMD a10a 4E smd diode smd transistor d9d DC1652A
M2KA Abstract: HEPC XS2F-D523-D80-A OMR H C3JW ly2f t2 YAZAKI Terminal7116-4022 WL01CA 54151A Text: We surveyed SVHC 161 substances. REACH/SVHC Information Product description SMCI XB. SMC TE SENSOR YA-JA01 PB FREE SENSOR YA-HC05 PBFREE SP SMC DI SENSOR YA-HC04 SMC DI SENSOR YA-JB01 SENSOR YA-HC09(SP) SENSOR YA-HA01PB-FREE(SP) SENSOR YA-HC09 SMC YA-JA02 A-TE SENSOR	Original	PDF	YA-JA01 YA-HC05 YA-HC04 YA-JB01 YA-HC09 YA-HA01PB-FREE YA-HC09 YA-JA02 YA-HC18 YA-JB05 M2KA HEPC XS2F-D523-D80-A OMR H C3JW ly2f t2 YAZAKI Terminal7116-4022 WL01CA 54151A
7 segmen Abstract: D101R Text: QS70261A, QS7026A PRELIMINARY High-Speed CMOS 16K x 16 Asynchronous Dual-Port RAM Q FEATURES QS70261A QS7026A DESCRIPTION High-speed asynchronous dual-port architecture Access times from either port, 17/20/25/35/55 ns Industry standard pin-out Independent port access and control	OCR Scan	PDF	QS70261A, QS7026A QS70261A QS7026A 100-pin 84-pin QS72026A QS70261A/26A 7 segmen D101R
ALC100 Abstract: ST CD C226 VM036 BK1606 COD-51 LS-120 WD62 L420 eef 1208 PA6 GF 10 MD10 Text: D i a g r a m s M a in b o a r d G T LH W 3 b TLH A 6 T LH W S G TL H i« G T L H tf? GT L HA#6 \ U . tq : 02: I4 n : « ; K1 . ji ; s . m : G r. h i; » : pi . H . r ; E l, 0« . IB . 0) E2, IS . w . f t , ci 83 . A3 02, 2 1; Ai AS 84, C5 , g t lh w s	OCR Scan	PDF	0UF/16V ALC100 ST CD C226 VM036 BK1606 COD-51 LS-120 WD62 L420 eef 1208 PA6 GF 10 MD10