QW-R206-081
Abstract: marking C5 2SA1774 2SC4617 2SC4617L-AE3-R 2SC4617-AE3-R hFE is transistor
Text: UNISONIC TECHNOLOGIES CO., 2SC4617 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR FEATURES 2 * Low Cob Cob=2.0pF typ * Complements the UTC 2SA1774 1 3 MARKING C5 SOT-23 *Pb-free plating product number: 2SC4617L PIN CONFIGURATION PIN NO. PIN NAME
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2SC4617
2SA1774
OT-23
2SC4617L
2SC4617-AE3-R
2SC4617L-AE3-R
QW-R206-081
marking C5
2SA1774
2SC4617
2SC4617L-AE3-R
hFE is transistor
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marking C5
Abstract: No abstract text available
Text: UTC 2SC4617 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR FEATURES * Low Cob Cob=2.0pF typ * Complements the UTC 2SA1774 1 MARKING 2 3 C5 SOT-523 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ) PARAMETER SYMBOL RATINGS
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2SC4617
2SA1774
OT-523
QW-R221-010
marking C5
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GE-3 PNP transistor
Abstract: Ge 652 TRANSISTOR marking k2 dual nt transistor
Text: UMC5N FMC5A and NPN’ with 2 resistors Features Dimensions Units: mm Transistor, digital, dual, PNP available in UMT5 (UM5) and SMT5 (FMT, SC-74A) packages UMC5N (UMT5) package marking: UMC5N and FMC5A; C5 package contains an NPN (DTC144EKA) and a PNP (DTA143XKA) digital transistor, each
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SC-74A)
DTC144EKA)
DTA143XKA)
SC-70)
SC-59)
GE-3 PNP transistor
Ge 652
TRANSISTOR marking k2 dual
nt transistor
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Untitled
Abstract: No abstract text available
Text: DSC5G02 Silicon NPN epitaxial planar type For high-frequency amplification DSC2G02 in SMini3 type package Unit: mm • Features High transition frequency fT Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant Marking Symbol: C5
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DSC5G02
DSC2G02
UL-94
DSC5G02Ã
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Untitled
Abstract: No abstract text available
Text: DSC9G02 Silicon NPN epitaxial planar type For high-frequency amplification DSC5G02 in SSMini3 type package Unit: mm • Features High transition frequency fT Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant Marking Symbol: C5
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DSC9G02
DSC5G02
UL-94
DSC9G02Ã
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RF2045
Abstract: NE AND micro-X
Text: RF2045 GENERAL PURPOSE AMPLIFIER NOT FOR NEW DESIGNS RoHS Compliant & Pb-Free Product Package Style: Micro-X Ceramic GND 4 Features MARKING - C5 SI GN S DC to 6000MHz Operation Internally matched Input and Output 14dB Small Signal Gain +32dBm Output IP3
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RF2045
RF2045
RF204X
DS070403
NE AND micro-X
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Untitled
Abstract: No abstract text available
Text: DSC2G02 Silicon NPN epitaxial planar type Unit: mm For high-frequency amplification • Features High transition frequency fT Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant Marking Symbol: C5 Packaging DSC2G02x0L Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard)
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DSC2G02
UL-94
DSC2G02Ã
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NEC Ga FET marking L
Abstract: Ga FET marking 1D 2SJ209 TF101-D NEC Ga FET marking A NEC Ga FET marking z NEC Ga FET "marking M" NEC Ga FET
Text: AdLib OCR Evaluation MOS FIELD EFFECT TRANSISTOR 2SJ209 P-CHANNEL MOS FET FOR SWITCHING PACKAGE DIMENSIONS Unit : mm 2.8±0.2 00 + 1.5 1~t, c'! +1 0~ C14 U T 0~ 0.65 _+0015 Ll 2 FEATURES Lo I 3 d+ csI Marking M 6 + t L C5 1 . Sourco 2 . Ga . 3 . Drain " Directly driven by lCs; having a 5 V power supply .
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2SJ209
2SJ209,
NEC Ga FET marking L
Ga FET marking 1D
2SJ209
TF101-D
NEC Ga FET marking A
NEC Ga FET marking z
NEC Ga FET "marking M"
NEC Ga FET
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data MMG3003NT1 Rev. 1, 1/2005 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3003NT1 Broadband High Linearity Amplifier The MMG3003NT1 is a General Purpose Amplifier that is internally input matched and internally output prematched. It is designed for a broad
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MMG3003NT1
MMG3003NT1
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freescale semiconductor body marking
Abstract: ML200C marking c5 Z3 marking
Text: Freescale Semiconductor Technical Data MMG3003NT1 Rev. 1, 1/2005 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3003NT1 Broadband High Linearity Amplifier The MMG3003NT1 is a General Purpose Amplifier that is internally input matched and internally output prematched. It is designed for a broad
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MMG3003NT1
OT-89
freescale semiconductor body marking
ML200C
marking c5
Z3 marking
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XMFP1-M3
Abstract: D 8243 HC E176 e170315 OF FET E176 FET E119 E176 field effect transistor E176 fet mc34063 step down external transistor 28428
Text: GaAs GaAs FIELD EFFECT TRANSISTOR GaAs FIELD EFFECT TRANSISTOR Murata Manufacturing Co., Ltd. Cat. No. O35E Contents Small Signal FETs XMFS Series ••••••••••••••••••••••••••••••••••••••••••••••••••••••
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Rating3-5698410
XMFP1-M3
D 8243 HC
E176
e170315
OF FET E176
FET E119
E176 field effect transistor
E176 fet
mc34063 step down external transistor
28428
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smd transistor marking z3
Abstract: smd transistor marking j6 J585 mosfet smd transistor marking z8 smd transistor z4 smd transistor marking mf capacitor philips Z9 TRANSISTOR SMD J216 transistor 6 pin SMD Z2
Text: Freescale Semiconductor Technical Data Rev. 6, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF18090AR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF18090AR3
smd transistor marking z3
smd transistor marking j6
J585 mosfet
smd transistor marking z8
smd transistor z4
smd transistor marking mf
capacitor philips
Z9 TRANSISTOR SMD
J216
transistor 6 pin SMD Z2
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smd transistor marking j8
Abstract: smd transistor marking j6 transistor J585 smd transistor marking mf transistor smd z3 smd transistor marking z8
Text: Freescale Semiconductor Technical Data Rev. 6, 12/2004 RF Power Field Effect Transistors MRF18090BR3 MRF18090BSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF18090BR3
MRF18090BSR3
smd transistor marking j8
smd transistor marking j6
transistor J585
smd transistor marking mf
transistor smd z3
smd transistor marking z8
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transistor 5d
Abstract: TC-2177 IC S350 marking s350
Text: AdLib OCR DATA SHEET Evaluation IVEC SILICON TRANSISTOR ELECTRON DEVICE GN1F4N MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR FEATURES PACKAGE DIMENSIONS in millimeters a Resistors Built-in TYPE C 2.1+0 .1 1 .25±0.1 z + p C5 C5 +1 M N U:~ Ci
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TC-2177
1988M
transistor 5d
TC-2177
IC S350
marking s350
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SMD Transistor z6
Abstract: transistor SMD Z2 Transistor smd Z3 J344 smd transistor marking z3 transistor 6 pin SMD Z2 MOSFET marking Z5 transistor Z6 SMD z6 SMD TRANSISTOR MARKING Z2
Text: Freescale Semiconductor Technical Data Rev. 6, 1/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for PCN and PCS base station applications with frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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GSM1930
MRF18060BLSR3
SMD Transistor z6
transistor SMD Z2
Transistor smd Z3
J344
smd transistor marking z3
transistor 6 pin SMD Z2
MOSFET marking Z5
transistor Z6
SMD z6
SMD TRANSISTOR MARKING Z2
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MF 198 ferrite
Abstract: capacitor j476 capacitor Marking J336
Text: Freescale Semiconductor Technical Data Rev. 4, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF18085BR3 MRF18085BLSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA, and multicarrier
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RF18085BR3
MRF18085BLSR3
MRF18085BR3
MF 198 ferrite
capacitor j476
capacitor Marking J336
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Untitled
Abstract: No abstract text available
Text: STAC9200 200 W, 32 V HF to 1.3 GHz LDMOS transistor in a STAC package Datasheet - preliminary data Features • Improved ruggedness: V BR DSS > 80 V • Load mismatch 65:1 all phases @ 200 W / 32 V / 860 MHz under 1 msec - 10% • POUT = 200 W min. (250 W typ.) with 16 dB
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STAC9200
2002/95/EC
STAC244B
STAC9200
DocID025416
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Untitled
Abstract: No abstract text available
Text: BFR193L3 NPN Silicon RF Transistor Preliminary data For low noise, high-gain amplifiers up to 2 GHz 3 For linear broadband amplifiers fT = 8 GHz 1 F = 1.2 dB at 900 MHz 2 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type
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BFR193L3
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0805 capacitor 10 pf
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Rev. 5, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large - signal, common source amplifier applications in 26 volt base station equipment.
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MRF9080LR3
MRF9080LSR3
0805 capacitor 10 pf
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100B220GW
Abstract: 100B100GW
Text: Freescale Semiconductor Technical Data Rev. 3, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9100R3 MRF9100SR3 Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these
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MRF9100R3
MRF9100SR3
100B220GW
100B100GW
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infineon marking L2
Abstract: BFR193L3
Text: BFR193L3 NPN Silicon RF Transistor* • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers 3 1 • fT = 8 GHz, F = 1 dB at 900 MHz 2 * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!
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BFR193L3
infineon marking L2
BFR193L3
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BFR193L3
Abstract: BFR380L3 marking FC
Text: BFR380L3 NPN Silicon RF Transistor* • High current capability and low figure for wide dynamic range application 3 1 • Low voltage operation 2 • Ideal for low phase noise oscillators up to 3.5 GHz • Low noise figure: 1.1 dB at 1.8 GHz * Short term description
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BFR380L3
BFR193L3
BFR380L3
marking FC
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marking FC
Abstract: No abstract text available
Text: BFR380L3 NPN Silicon RF Transistor Preliminary data High current capability and low figure for 3 wide dynamic range application Low voltage operation Ideal for low phase noise oscillators up to 3.5 GHz 1 2 Low noise figure: 1.1 dB at 1.8 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BFR380L3
marking FC
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BFR193L3
Abstract: BFR340L3 marking FA
Text: BFR340L3 NPN Silicon RF Transistor* • Low voltage/ Low current operation • Transition frequency of 14 GHz 3 1 • High insertion gain 2 • Ideal for low current amplifiers and oscillators * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!
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BFR340L3
BFR193L3
BFR340L3
marking FA
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