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    C64 TRANSISTOR Search Results

    C64 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    C64 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    9926C

    Abstract: IPI037N06L3 s4si IPP037N06L3 G
    Text: IPB034N06L3 G Jf]R IPI037N06L3 G IPP037N06L3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9I R #562 =7@C9:89 7C6BF6? 4J DH:E49:? 8 2 ? 5 DJ? 4 C64 R  - @? > 2 I - ' R AE:> :K65 E649? @= @8J 7@C    4@? G6CE6CD I9   . K +&, Z" 1(


    Original     		PDF IPB034N06L3 IPI037N06L3 IPP037N06L3 76BF6? 766substances. 9926C s4si IPP037N06L3 G

    IPB230N06L3

    Abstract: IPP230N06L3 G s4si
    Text: IPB230N06L3 G IPP230N06L3 G Jf]R "%&$!"# 3 Power-Transistor Product Summary Features R #562 =7@C9:89 7C6BF6? 4J DH:E49:? 8 2 ? 5 DJ? 4 C64 R AE:> :K65 E649? @= @8J 7@C    4@? G6CE6CD V 9I . K R 9I"\[#$ZNe *+ Z" I9 +( 6 R  I46= = 6? E82 E6 492 C86 IR 9I"\[# AC@5F4E ) ' 


    Original     		PDF IPB230N06L3 IPP230N06L3 76BF6? IPP230N06L3 G s4si

    marking xd diode

    Abstract: e866 marking 8fc marking J6c s4si
    Text: IPB081N06L3 G IPP084N06L3 G Jf]R "%&$!"# 3 Power-Transistor Product Summary Features V 9I R #562 =7@C9:89 7C6BF6? 4J DH:E49:? 8 2 ? 5 DJ? 4 C64 R  - @? >2 I- ' R AE:> :K65 E649? @= @8J 7@C    4@? G6CE6CD   I9 . K 0&) Z" -( 6 R  I46= = 6? E82 E6 492 C86 IR 9I"\[# AC@5F4E ) ' 


    Original     		PDF IPB081N06L3 IPP084N06L3 76BF6? marking xd diode e866 marking 8fc marking J6c s4si

    AF41

    Abstract: diode 6e marking 8FC diode 6d 50 56E MARKING s4si
    Text: IPB049N06L3 G IPP052N06L3 G Jf]R "%&$!"# 3 Power-Transistor Product Summary Features V 9I R #562 =7@C9:89 7C6BF6? 4J DH:E49:? 8 2 ? 5 DJ? 4 C64 R  - @? >2 I- ' R AE:> :K65 E649? @= @8J 7@C    4@? G6CE6CD   I9 . K ,&/ Z" 0( 6 R  I46= = 6? E82 E6 492 C86 IR 9I"\[# AC@5F4E ) ' 


    Original     		PDF IPB049N06L3 IPP052N06L3 AF41 diode 6e marking 8FC diode 6d 50 56E MARKING s4si

    CMLT6427E

    Abstract: C64 transistor Marking C64
    Text: CMLT6427E ENHANCED SPECIFICATION SURFACE MOUNT, PICOminiTM SILICON NPN DARLINGTON TRANSISTOR CC CC E B SOT-563 CASE APPLICATIONS: • MOTOR DRIVERS • RELAY DRIVERS • PRE-AMPLIFIER INPUT APPLICATIONS • VOLTAGE REGULATOR CONTROLS Central TM Semiconductor Corp.


    Original     		PDF CMLT6427E OT-563 CMLT6427E 500mA 100mA, 500mA, 100mA 500mA 100MHz C64 transistor Marking C64

    Untitled

    Abstract: No abstract text available
    Text: CMLT6427E ENHANCED SPECIFICATION SURFACE MOUNT NPN DARLINGTON SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT6427E is an Enhanced Specification, PICOmini , NPN Silicon Darlington Transistor. High DC Current gains, coupled


    Original     		PDF CMLT6427E CMLT6427E OT-563 100mA, 500mA, 100mA 500mA 100MHz

    Untitled

    Abstract: No abstract text available
    Text: CMLT6427E ENHANCED SPECIFICATION SURFACE MOUNT SILICON NPN DARLINGTON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT6427E is an Enhanced Specification silicon NPN Darlington transistor. High DC current gains, coupled with a low


    Original     		PDF CMLT6427E CMLT6427E OT-563 100mA, 500mA, 100mA 500mA 100MHz

    CMLT6427E

    Abstract: No abstract text available
    Text: CMLT6427E ENHANCED SPECIFICATION SURFACE MOUNT NPN DARLINGTON SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT6427E is an Enhanced Specification, PICOmini , NPN Silicon Darlington Transistor. High DC Current gains, coupled


    Original     		PDF CMLT6427E CMLT6427E OT-563 100mA, 500mA, 100mA 500mA 100MHz

    Untitled

    Abstract: No abstract text available
    Text: IPB081N06L3 G IPP084N06L3 G Jf]R  3 Power-Transistor Product Summary Features R฀#562=฀7@C฀9:89฀7C6BF6?4J฀DH:E49:?8฀2?5฀DJ?4 ฀C64 R฀ AE:>:K65฀E649?@=@8J฀7@C฀ ฀4@?G6CE6CD V 9I . K R -@?>2I฀-' 0&) Z I9 -( 6


    Original     		PDF IPB081N06L3 IPP084N06L3 492C86à E6DE65 E2C86Eà

    Untitled

    Abstract: No abstract text available
    Text: IPB049N06L3 G IPP052N06L3 G Jf]R  3 Power-Transistor Product Summary Features R฀#562=฀7@C฀9:89฀7C6BF6?4J฀DH:E49:?8฀2?5฀DJ?4 ฀C64 R฀ AE:>:K65฀E649?@=@8J฀7@C฀ ฀4@?G6CE6CD V 9I . K R -@?>2I฀-' ,&/ Z I9 0( 6


    Original     		PDF IPB049N06L3 IPP052N06L3 492C86à E6DE65 E2C86Eà

    IPP037N06L3 G

    Abstract: No abstract text available
    Text: IPB034N06L3 G Jf]R IPI037N06L3 G IPP037N06L3 G  3 Power-Transistor Product Summary Features V 9I . K R฀#562=฀7@C฀9:89฀7C6BF6?4J฀DH:E49:?8฀2?5฀DJ?4 ฀C64 R -@?>2I฀-' +&, Z R฀ AE:>:K65฀E649?@=@8J฀7@C฀ ฀4@?G6CE6CD


    Original     		PDF IPB034N06L3 IPI037N06L3 IPP037N06L3 492C86à E6DE65 E2C86Eà IPP037N06L3 G

    IPD110N12N3 G

    Abstract: No abstract text available
    Text: IPD110N12N3 G IPS110N12N3 G TM3Power-Transistor Features Product Summary R฀ 492?6=฀?@C>2=฀=6G6= V ;I *( K R ;I"\[#$>2I฀ ) Z I; /- 7 R฀ I46=6?E฀82E6฀492C86฀I฀R ;I"\[#฀AC@5F4E฀!)' R฀/6CJ฀=@H฀@? C6D:DE2?46฀R ;I"\[#


    Original     		PDF IPD110N12N3 IPS110N12N3 492C86à E2C86Eà E96CH IPD110N12N3 G

    Untitled

    Abstract: No abstract text available
    Text: IPB04CN10N G IPI04CN10N G IPP04CN10N G  2 Power-Transistor Product Summary Features R฀ 492?6=฀?@C>2=฀=6G6= R฀ I46=6?E฀82E6฀492C86฀I฀R ;I"\[#฀AC@5F4E฀! ' V ;I )( K R -@?>2I฀.)฀ +&1 Z I; )( 7 R฀/6CJ฀=@H฀@? C6D:DE2?46฀R ;I"\[#


    Original     		PDF IPB04CN10N IPI04CN10N IPP04CN10N 492C86à E2C86Eà

    Untitled

    Abstract: No abstract text available
    Text: IPB05CN10N G IPI05CN10N G IPP05CN10N G  2 Power-Transistor Product Summary Features R฀ 492?6=฀?@C>2=฀=6G6= R฀ I46=6?E฀82E6฀492C86฀I฀R ;I"\[#฀AC@5F4E฀! ' V ;I )( K R -@?>2I฀.)฀ -&) Z I; )( 7 R฀/6CJ฀=@H฀@? C6D:DE2?46฀R ;I"\[#


    Original     		PDF IPB05CN10N IPI05CN10N IPP05CN10N 492C86à E2C86Eà

    marking 6d

    Abstract: IPD110N12N3 G
    Text: IPD110N12N3 G IPS110N12N3 G "%&$!"#TM3Power-Transistor Features Product Summary R 492 ?6= ?@ C>2 =6G6= V ;I *( K R ;I"\[#$>2 I ) Z" I; /- 7 R I46=6?E82 E6 492 C86 IR ;I"\[# AC@ 5F4E!) '  R/ 6CJ =@ H @ ? C6D:DE 2 ?46 R ;I"\[# R   U @ A6C2 E:?8 E6>A6C2 E


    Original     		PDF IPD110N12N3 IPS110N12N3 8976BF6 marking 6d IPD110N12N3 G

    marking 6d

    Abstract: IPP04CN10N G diode 6e
    Text: IPB04CN10N G IPI04CN10N G IPP04CN10N G "%&$!"# 2 Power-Transistor Product Summary Features V ;I R 492 ?6= ?@ C>2 =6G6= R  - @ ?>2 I. R I46=6?E82 E6 492 C86 IR ;I"\[# AC@ 5F4E!) '   I; )( K +&1 Z" )( 7 R/ 6CJ =@ H @ ? C6D:DE 2 ?46 R ;I"\[#


    Original     		PDF IPB04CN10N IPI04CN10N IPP04CN10N marking 6d IPP04CN10N G diode 6e

    DIODE 5c2 5t

    Abstract: No abstract text available
    Text: IPB144N12N3 G IPI147N12N3 G IPP147N12N3 G  3 Power-Transistor Product Summary Features R฀ 492?6=฀?@C>2=฀=6G6= R฀ I46=6?E฀82E6฀492C86฀I฀R ;I"\[#฀AC@5F4E฀! ' V ;I )*( K R -@?>2I฀ ),&/ Z I; -. 7 R฀/6CJ฀=@H฀@? C6D:DE2?46฀R ;I"\[#


    Original     		PDF IPB144N12N3 IPI147N12N3 IPP147N12N3 492C86à E2C86Eà DIODE 5c2 5t

    marking 9D

    Abstract: sd marking 8H IPP06CN10N PG-TO220-3 A6c DIODE
    Text: IPB06CN10N G IPI06CN10N G IPP06CN10N G "%&$!"# 2 Power-Transistor Product Summary Features R 492 ?6= ?@ C>2 =6G6= R I46=6?E82 E6 492 C86 IR ;I"\[# AC@ 5F4E! '  V ;I )( K R  - @ ?>2 I.)     .&* Z" I; )( 7 R/ 6CJ =@ H @ ? C6D:DE 2 ?46 R ;I"\[#


    Original     		PDF IPB06CN10N IPI06CN10N IPP06CN10N 8976BF6 marking 9D sd marking 8H PG-TO220-3 A6c DIODE

    marking J6c

    Abstract: marking 6C marking 09D marking 6c 7
    Text: IPB08CNE8N G IPI08CNE8N G IPP08CNE8N G "%&$!"# 2 Power-Transistor Product Summary Features R 492 ?6= ?@ C>2 =6G6= R I46=6?E82 E6 492 C86 IR ;I"\[# AC@ 5F4E! '  V ;I 0- K R  - @ ?>2 I.)     0&* Z" I; 1- 7 R/ 6CJ =@ H @ ? C6D:DE 2 ?46 R ;I"\[#


    Original     		PDF IPB08CNE8N IPI08CNE8N IPP08CNE8N marking J6c marking 6C marking 09D marking 6c 7

    "Darlington Transistor"

    Abstract: hFE is transistor darlington transistor TRANSISTOR GUIDE "Small Signal Amplifier" EIA-481-1 high hfe transistor CMLT6427E
    Text: PRODUCT announcement CMLT6427E Darlington Transistor World’s Smallest Darlington SOT-563 features Sample Devices • Utilizes 62% less board space than an industry standard SOT-23 available • Enhanced Specifications for ICEO, BVCBO, BVCES, BVEBO, VCE SAT , and hFE


    Original     		PDF CMLT6427E OT-563 OT-23 OT-563 OT-23. EIA-481-1-A "Darlington Transistor" hFE is transistor darlington transistor TRANSISTOR GUIDE "Small Signal Amplifier" EIA-481-1 high hfe transistor

    IPP054NE8N

    Abstract: FX23L-100S-0.5SV
    Text: IPB051NE8N G IPI05CNE8N G IPP054NE8N G "%&$!"# 2 Power-Transistor Product Summary Features V ;I R 492 ?6= ?@ C>2 =6G6= R  - @ ?>2 I. R I46=6?E82 E6 492 C86 IR ;I"\[# AC@ 5F4E!) '   I; 0- K -&) Z" )( 7 R/ 6CJ =@ H @ ? C6D:DE 2 ?46 R ;I"\[#


    Original     		PDF IPB051NE8N IPI05CNE8N IPP054NE8N 8976BF6 FX23L-100S-0.5SV

    Untitled

    Abstract: No abstract text available
    Text: PIC16C64 PIC16C64 Rev. A Silicon Errata Sheet The PIC16C64 Rev. A parts you have received conform functionally to the Device Data Sheet (DS30234D), except for the anomalies described below. All the problems listed here will be addressed in future revisions of the PIC16C64 silicon.


    Original     		PDF PIC16C64 PIC16C64 DS30234D) DS30234D/C64/E2A1-page

    IPP05CN10N

    Abstract: No abstract text available
    Text: IPB05CN10N G IPI05CN10N G IPP05CN10N G "%&$!"# 2 Power-Transistor Product Summary Features V ;I R 492 ?6= ?@ C>2 =6G6= R  - @ ?>2 I. R I46=6?E82 E6 492 C86 IR ;I"\[# AC@ 5F4E!) '   I; )( K -&) Z" )( 7 R/ 6CJ =@ H @ ? C6D:DE 2 ?46 R ;I"\[#


    Original     		PDF IPB05CN10N IPI05CN10N IPP05CN10N 8976BF6

    SDT55407

    Abstract: SDT55503 SDT55905
    Text: -Jfoutron Ä1FÄ L(Q ( Devices, Inc MEDIUM TO HIGH VOLTAGE, HIGH CURRENT CHIP N UM BER NPN EPITAXIAL PLANAR POWER TRANSISTOR (FORMERLY 55) CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver” also available)


    OCR Scan     		PDF 203mm) SDT55407 SDT55503 SDT55905