C7 MARKING Fairchild
Abstract: No abstract text available
Text: FCP380N60E / FCPF380N60E N-Channel SuperFET II MOSFET 600 V, 10.2 A, 380 mΩ Features Description ® ® SuperFET II MOSFET is Fairchild Semiconductor ’s first generation of high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conduction loss, provide superior
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FCP380N60E
FCPF380N60E
FCPF380N60E
C7 MARKING Fairchild
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Untitled
Abstract: No abstract text available
Text: FDW2511NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 7.1A, 20V General Description rDS ON =0.020Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance
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FDW2511NZ
FDW2511NZ
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2511NZ
Abstract: FDW2511NZ dual mosfet tt 6 pin Diode N7 S2 2511N 6 pin diode n10
Text: FDW2511NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 7.1A, 20V General Description rDS ON =0.020Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance
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FDW2511NZ
FDW2511NZ
2511NZ
dual mosfet tt 6 pin
Diode N7 S2
2511N
6 pin diode n10
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n mosfet pspice parameters
Abstract: FDW2512NZ 2512nz
Text: FDW2512NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 6A, 20V General Description rDS ON = 0.028Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance
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FDW2512NZ
FDW2512NZ
n mosfet pspice parameters
2512nz
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5e8 marking
Abstract: 66E-3
Text: FDW2601NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 8.2A, 30V General Description rDS ON = 0.015Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance
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FDW2601NZ
FDW2601NZ
5e8 marking
66E-3
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Untitled
Abstract: No abstract text available
Text: FDW2512NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 6A, 20V General Description rDS ON = 0.028Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance
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FDW2512NZ
FDW2512NZ
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2601NZ
Abstract: FDW2601NZ 2601N
Text: FDW2601NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 8.2A, 30V General Description rDS ON = 0.015Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance
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FDW2601NZ
FDW2601NZ
2601NZ
2601N
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n20 n21 fet
Abstract: 53E1 FDG6318PZ SC-70-6 SC70-6 dual transistors sc-70-6 N2 SC70 SC-70-6 zener 15v 27E4 55E-4
Text: FDG6318PZ Dual P-Channel, Digital FET General Description Features These dual P-Channel logic level enhancement mode MOSFET are produced using Fairchild Semiconductor’s especially tailored to minimize on-state resistance. This device has been designed especially for bipolar digital
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FDG6318PZ
1200m
SC-70-6
n20 n21 fet
53E1
FDG6318PZ
SC70-6
dual transistors sc-70-6
N2 SC70
SC-70-6 zener 15v
27E4
55E-4
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Untitled
Abstract: No abstract text available
Text: FDW2512NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 6A, 20V General Description rDS ON = 0.028Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance
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FDW2512NZ
FDW2512NZ
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Untitled
Abstract: No abstract text available
Text: FDW2517NZ Dual N-Channel 2.5V Specified Trench MOSFET General Description Features This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching
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Untitled
Abstract: No abstract text available
Text: FDW2511NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 7.1A, 20V General Description rDS ON =0.020Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance
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FDW2511NZ
FDW2511NZ
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Untitled
Abstract: No abstract text available
Text: May 2008 FDW2601NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features 8.2A, 30V tmM General Description rDS ON = 0.015Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance
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FDW2601NZ
FDW2601NZ
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FDW2512NZ
Abstract: KP198
Text: May 2008 FDW2512NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 6A, 20V General Description rDS ON = 0.028Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance
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FDW2512NZ
FDW2512NZ
KP198
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FDW2601NZ
Abstract: N-Channel 2.5V 2601NZ
Text: May 2008 FDW2601NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 8.2A, 30V tmM General Description rDS ON = 0.015Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance
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FDW2601NZ
FDW2601NZ
N-Channel 2.5V
2601NZ
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2601NZ
Abstract: 47e3 Diode N7 S2 N9 S2 MARKING DIODE 096E-9 dual mosfet 337 Dual N-Channel 2.5V 17E-3
Text: FDW2601NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 8.2A, 30V General Description rDS ON = 0.015Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance
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FDW2601NZ
2601NZ
47e3
Diode N7 S2
N9 S2 MARKING DIODE
096E-9
dual mosfet 337
Dual N-Channel 2.5V
17E-3
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C7 MARKING Fairchild
Abstract: No abstract text available
Text: FDM3622 N-Channel PowerTrench MOSFET tm 100V, 4.4A, 60m: General Description Features r DS ON = 44m: (Typ.), VGS = 10V, ID = 4.4A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance
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FDM3622
C7 MARKING Fairchild
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2511NZ
Abstract: m068 BV150 FDW2511NZ n10 diode 51E3 KP17 Diode N7 S2
Text: May 2008 FDW2511NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features ! 7.1A, 20V tmM General Description rDS ON =0.020Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance
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FDW2511NZ
FDW2511NZ
2511NZ
m068
BV150
n10 diode
51E3
KP17
Diode N7 S2
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FDM3622
Abstract: TRS250
Text: FDM3622 N-Channel PowerTrench MOSFET 100V, 4.4A, 60mΩ General Description Features r DS ON = 44mΩ (Typ.), VGS = 10V, ID = 4.4A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance
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FDM3622
FDM3622
TRS250
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Untitled
Abstract: No abstract text available
Text: May 2008 FDW2511NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET Features 7.1A, 20V tmM General Description rDS ON =0.020Ω, VGS = 4.5V This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance
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FDW2511NZ
FDW2511NZ
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FDM606P
Abstract: m073
Text: FDM606P P-Channel 1.8V Logic Level Power Trench MOSFET General Description Features This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching
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FDM606P
FDM606P
m073
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m073
Abstract: FDM606P BTM marking
Text: FDM606P P-Channel 1.8V Logic Level Power Trench MOSFET General Description Features This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching
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FDM606P
m073
FDM606P
BTM marking
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nc7wz16l6x
Abstract: NC7WZ16P6X Z16 dual buffer NC7WZ16
Text: Revised May 2003 NC7WZ16 TinyLogic UHS Dual Buffer General Description Features The NC7WZ16 is a dual buffer from Fairchild’s Ultra High Speed Series of TinyLogic in the space saving SC70 6lead package. The device is fabricated with advanced CMOS technology to achieve ultra high speed with high
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NC7WZ16
NC7WZ16L6X
NC7WZ16P6X
Z16 dual buffer
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igbt current sensing
Abstract: FBA42060 home air conditioner circuit diagram
Text: Motion SPM FBA42060 Smart Power Module for Boost PFC Features General Description • 600V-20A rectifiers for single-phase ac input with IGBT switch for operation of active switching converter. FBA42060 is an advanced smart power module of PFC Power Factor Correction that Fairchild has newly developed and
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FBA42060
FBA42060
00V-20A
igbt current sensing
home air conditioner circuit diagram
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3 phase rectifier circuit diagram igbt
Abstract: FPAM30LH60 PFC2012 1/FPAM30LH60
Text: FPAM30LH60 PFC SPM 2 Series for 2-Phase Interleaved PFC Features General Description • Low Thermal Resistance Thanks to Al2O3 DBC Substrate FPAM30LH60 Is A PFC SPM 2 Series for 2-Phase Interleaved PFC Power Factor Correction that Fairchild Has Developed for Mid-Power Home Appliance Applications
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FPAM30LH60
FPAM30LH60
E209024
3 phase rectifier circuit diagram igbt
PFC2012
1/FPAM30LH60
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