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    C8V DIODE Search Results

    C8V DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    C8V DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SOT-23-hg

    Abstract: MARKING k3 SOT-23 SOT-23hg
    Text: KDV804M/S SEMICONDUCTOR VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TECHNICAL DATA TUNING OF SEPERATE RESONANT CIRCUIT, PUSH-PULL CIRCUIT IN FM RANGE, ESPECIALLY FOR CAR AUDIO. A B FEATURES O F Low Series Resistance : rs=0.3 TYP. . Small Package : SOT-23.


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    PDF KDV804M/S OT-23. OT-23 100MHz SOT-23-hg MARKING k3 SOT-23 SOT-23hg

    varactor diode fm

    Abstract: No abstract text available
    Text: ‫ྏܤ‬औ૵਌! Varactor Diode FHV804 Varactor Diode ‫ྏܤ‬औ૵਌ DESCRIPTION & FEATURES 概述及特點 Low Series Resistance rs=0.3Ω低串聯電阻 FM Radio Band Tuning Application Especially for Car Audio 汽車音響FM無線波段應用


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    PDF OT-23 FHV804 OT-23 FHV804A FHV804B FHV804C FHV804D FHV804E varactor diode fm

    SVC353

    Abstract: 2230M
    Text: Ordering number :EN3040B SVC353 Diffused Junction Type Silicon Diode Composite Varactor Diode for AM Receiver Low-Voltage Electronic Tuning Use Features Package Dimensions • Excellent matching characteristics because of composite type. · The number of manufacturing processes can be


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    PDF EN3040B SVC353 SVC353 1214B SVC353] 2230M

    SVC364

    Abstract: No abstract text available
    Text: Ordering number :EN4275A SVC364 Diffused Junction Type Silicon Diode Composite Varactor Diode for AM Receiver Low-Voltage Electronic Applications Features Package Dimensions • Excellent matching characteristics because of composite type. · Manufacturing processes reducible and automatic


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    PDF EN4275A SVC364 SVC364] 125such SVC364

    SVC351

    Abstract: 4565l
    Text: Ordering number:EN2819D SVC351 Diffused Junction Type Silicon Diode Composite Varactor Diode for AM Receiver Electronic Tuning Use Features Package Dimensions • Execellent matching characteristics because of composite type. · The number of manufacturing processes can be


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    PDF EN2819D SVC351 1194B SVC351] SVC351 4565l

    SVC364

    Abstract: No abstract text available
    Text: Ordering number :EN4275A SVC364 Diffused Junction Type Sillicon Diode Composite Varactor Diode for AM Receiver Low-Voltage Electronic Applications Features Package Dimensions • Excellent matching characteristics because of composite type. · Manufacturing processes reducible and automatic


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    PDF EN4275A SVC364 SVC364] 12such SVC364

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:EN2819D SVC351 Diffused Junction Type Silicon Diode Composite Varactor Diode for AM Receiver Electronic Tuning Use Features Package Dimensions • Execellent matching characteristics because of composite type. · The number of manufacturing processes can be


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    PDF EN2819D SVC351 1194B SVC351]

    30403

    Abstract: 1214b SVC353 CD310
    Text: Ordering number :EN3040B SVC353 Diffused Junction Type Sillicon Diode Composite Varactor Diode for AM Receiver Low-Voltage Electronic Tuning Use Features Package Dimensions • Excellent matching characteristics because of composite type. · The number of manufacturing processes can be


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    PDF EN3040B SVC353 SVC353 1214B SVC353] 30403 1214b CD310

    cd3100

    Abstract: EN3048 SVC363 EN3048B
    Text: Ordering number :EN3048B SVC363 Diffused Junction Type Silicon Diode Composite Varactor Diode for AM Receiver Low-Voltage Electronic Tuning Use Features Package Dimensions • Excellent matching characteristics because of composite type. · The number of manufacturing processes can be


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    PDF EN3048B SVC363 SVC363 1214B SVC363] cd3100 EN3048 EN3048B

    SVC371

    Abstract: No abstract text available
    Text: Ordering number :EN5135A SVC371 Diffused Junction Type Sillicon Diode Composite Varactor Diode for AM Receiver Low-Voltage Electronic Tuning Applications Features Package Dimensions • Excellent large-input characteristics because of dualvaractor composite type.


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    PDF EN5135A SVC371 SVC371 SVC371]

    SVC371

    Abstract: AM receiver 513-51
    Text: Ordering number :EN5135A SVC371 Diffused Junction Type Silicon Diode Composite Varactor Diode for AM Receiver Low-Voltage Electronic Tuning Applications Features Package Dimensions • Excellent large-input characteristics because of dualvaractor composite type.


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    PDF EN5135A SVC371 SVC371 SVC371] AM receiver 513-51

    Untitled

    Abstract: No abstract text available
    Text: HN1V01H TO SH IBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE HN1V 0 1 H Unit in mm AM RADIO BAND TUNING APPLICATIONS 0.3 4.5 - 0.2 “ “ High Capacitance Ratio : CIV /C8V= 19.5(Typ. High Q : Q = 200 (Min.) Including Four Devices in FM8 Package (Flat Pack Mini 8Pin)


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    PDF HN1V01H

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA HN1V02H TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE H N1V 02 H Unit in mm AM RADIO BAND TUNING APPLICATIONS + 0.3 4.5 - 0.2 • • • • High Capacitance Ratio : C1V/C8V= 19.5 Typ. High Q : Q = 200 (Min.) Including Two Devices in FM8 Package (Flat Pack Mini 8Pin)


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    PDF HN1V02H

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA HN2V02H TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE HN2V02H Unit in mm AM RADIO BAND TUNING APPLICATIONS + 0.3 4.5 - 0.2 3.1 ±0 .2 □8 C'JCO to 7 to ÖÖ + 1 6 3 CHARACTERISTIC Reverse Voltage Junction Temperature Storage Temperature Range


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    PDF HN2V02H

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 1SV228 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1S V 228 Unit in ELECTRONIC TUNING APPLICATIONS OF FM RECEIVERS. mm ELECTRICAL CHARACTERISTICS Ta = 25°C CHARACTERISTIC Reverse Voltage Reverse Current Capacitance Capacitance


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    PDF 1SV228 100MHz

    1SV149

    Abstract: No abstract text available
    Text: 1SV 149 TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V 1 49 Unit in mm AM RADIO BAND TUNING APPLICATIONS. • • • • High Capacitance Ratio : C iy /C g y = 15 Min. High Q : Q = 200 (Min.) Small Package Low Voltage Operation : 1V-8V


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    PDF 1SV149 1SV149

    1SV228

    Abstract: No abstract text available
    Text: 1SV228 TOSHIBA 1 SV2 2 8 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm ELECTRONIC TUNING APPLICATIONS OF FM RECEIVERS. • • Low rg : rg = 0.30 Typ. Small Package 2 .5 1. 5 + - + - 0.5 0.3 0 .25 0 .15 öo + I È3- MAXIMUM RATINGS (Ta = 25°C)


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    PDF 1SV228 SC-59 10juA f-100MHz 1SV228

    1SV147

    Abstract: toshiba lable
    Text: SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE 1SV147 U nit in mm FM R A D IO B A N D T U N IN G A PP LIC A T IO N S . • • Low rs : rs = 0.3a Typ. Small Package M A X IM U M R ATINGS (Ta = 25°C) CHARACTERISTIC Reverse Voltage Junction Tem perature


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    PDF 1SV147 10/yA 1SV147 toshiba lable

    1SV228

    Abstract: No abstract text available
    Text: TOSHIBA 1SV228 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 228 Unit in mm ELECTRONIC TUNING APPLICATIONS OF FM RECEIVERS. • • + 0.5 2 .5 - 0.3 + 0.25 1. 5 - 0.15 Low rs : rs = 0.30 Typ. Small Package H- M A X IM U M RATINGS (Ta = 25°C)


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    PDF 1SV228 SC-59 10juA

    Untitled

    Abstract: No abstract text available
    Text: 1SV147 TO SHIBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V 1 47 Unit in mm FM RADIO BAND TUNING APPLICATIONS. • • Low rs : rs = 0.30 Typ. Small Package M A X IM U M RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Reverse Voltage


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    PDF 1SV147

    1SV147

    Abstract: toshiba lable information
    Text: 1SV 147 TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V 1 47 Unit in mm FM RADIO BAND TUNING APPLICATIONS. • • Low rg : rg = 0.30 Typ. Small Package q 5 5 MAX. MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Reverse Voltage


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    PDF 1SV147 1SV147 toshiba lable information

    KV1226

    Abstract: KV1236Z KV1235Z KV1225 KV1236 KV1320 KV1260 KV1235 KV1310 KV1330A-2
    Text: TOKO AMERICA INC D E .J cIDt>7Li32 □ 1 4 34 } VARjABLE^CAPACLTANCE^DiODES. — ' 9 0 6 7 6 3 2 T O K O A M E R I C A INC Variable Capacitance Diodes for AM KV1250 KV1260 • # KV1260-2 <* KV1230Z KV1235Z KV1234Z KV1236Z KV1225 KV1226 ♦ ■ KV1260M KV1560


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    PDF 7Li32 KV1250 KV1260 KV1260-2 KV1230Z KV1234Z KV1235Z KV1236Z KV1225 KV1226 KV1226 KV1236Z KV1235Z KV1225 KV1236 KV1320 KV1260 KV1235 KV1310 KV1330A-2

    lm 8712

    Abstract: LM 4741 1SV149
    Text: SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE 1 S V 1 4 9 U n it in m m A M RADIO BAND TUNING APPLICATIONS, • H igh C apacitance Ratio : C i v / C 8V = 15 Min. • H igh Q : Q = 200 (Min.) • Sm all Package • Low V oltage O peration : 1V-8V


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    PDF 1SV149 lm 8712 LM 4741 1SV149

    Untitled

    Abstract: No abstract text available
    Text: K n o x S e m ic o n d u c t o r , I n c . UHF HYPERABRUPT TUNING DIODES These implanted hyperabrupt varactors extend application frequencies up to 800 MHz with linear tuning capability between 3 and 8 volts. The diode capacitance ranges from 10.5 to 31 pF in support o f the higher application frequencies. Matched sets are available.


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    PDF LV2101 LV2103 C-20V LV2I01 LV2101A LV2802 LV2802A LV2803 LV2803A