SOT-23-hg
Abstract: MARKING k3 SOT-23 SOT-23hg
Text: KDV804M/S SEMICONDUCTOR VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TECHNICAL DATA TUNING OF SEPERATE RESONANT CIRCUIT, PUSH-PULL CIRCUIT IN FM RANGE, ESPECIALLY FOR CAR AUDIO. A B FEATURES O F Low Series Resistance : rs=0.3 TYP. . Small Package : SOT-23.
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KDV804M/S
OT-23.
OT-23
100MHz
SOT-23-hg
MARKING k3 SOT-23
SOT-23hg
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varactor diode fm
Abstract: No abstract text available
Text: ྏܤऔ! Varactor Diode FHV804 Varactor Diode ྏܤऔ DESCRIPTION & FEATURES 概述及特點 Low Series Resistance rs=0.3Ω低串聯電阻 FM Radio Band Tuning Application Especially for Car Audio 汽車音響FM無線波段應用
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OT-23
FHV804
OT-23
FHV804A
FHV804B
FHV804C
FHV804D
FHV804E
varactor diode fm
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SVC353
Abstract: 2230M
Text: Ordering number :EN3040B SVC353 Diffused Junction Type Silicon Diode Composite Varactor Diode for AM Receiver Low-Voltage Electronic Tuning Use Features Package Dimensions • Excellent matching characteristics because of composite type. · The number of manufacturing processes can be
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EN3040B
SVC353
SVC353
1214B
SVC353]
2230M
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SVC364
Abstract: No abstract text available
Text: Ordering number :EN4275A SVC364 Diffused Junction Type Silicon Diode Composite Varactor Diode for AM Receiver Low-Voltage Electronic Applications Features Package Dimensions • Excellent matching characteristics because of composite type. · Manufacturing processes reducible and automatic
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EN4275A
SVC364
SVC364]
125such
SVC364
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SVC351
Abstract: 4565l
Text: Ordering number:EN2819D SVC351 Diffused Junction Type Silicon Diode Composite Varactor Diode for AM Receiver Electronic Tuning Use Features Package Dimensions • Execellent matching characteristics because of composite type. · The number of manufacturing processes can be
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EN2819D
SVC351
1194B
SVC351]
SVC351
4565l
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SVC364
Abstract: No abstract text available
Text: Ordering number :EN4275A SVC364 Diffused Junction Type Sillicon Diode Composite Varactor Diode for AM Receiver Low-Voltage Electronic Applications Features Package Dimensions • Excellent matching characteristics because of composite type. · Manufacturing processes reducible and automatic
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EN4275A
SVC364
SVC364]
12such
SVC364
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Untitled
Abstract: No abstract text available
Text: Ordering number:EN2819D SVC351 Diffused Junction Type Silicon Diode Composite Varactor Diode for AM Receiver Electronic Tuning Use Features Package Dimensions • Execellent matching characteristics because of composite type. · The number of manufacturing processes can be
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EN2819D
SVC351
1194B
SVC351]
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30403
Abstract: 1214b SVC353 CD310
Text: Ordering number :EN3040B SVC353 Diffused Junction Type Sillicon Diode Composite Varactor Diode for AM Receiver Low-Voltage Electronic Tuning Use Features Package Dimensions • Excellent matching characteristics because of composite type. · The number of manufacturing processes can be
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EN3040B
SVC353
SVC353
1214B
SVC353]
30403
1214b
CD310
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cd3100
Abstract: EN3048 SVC363 EN3048B
Text: Ordering number :EN3048B SVC363 Diffused Junction Type Silicon Diode Composite Varactor Diode for AM Receiver Low-Voltage Electronic Tuning Use Features Package Dimensions • Excellent matching characteristics because of composite type. · The number of manufacturing processes can be
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EN3048B
SVC363
SVC363
1214B
SVC363]
cd3100
EN3048
EN3048B
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SVC371
Abstract: No abstract text available
Text: Ordering number :EN5135A SVC371 Diffused Junction Type Sillicon Diode Composite Varactor Diode for AM Receiver Low-Voltage Electronic Tuning Applications Features Package Dimensions • Excellent large-input characteristics because of dualvaractor composite type.
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EN5135A
SVC371
SVC371
SVC371]
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SVC371
Abstract: AM receiver 513-51
Text: Ordering number :EN5135A SVC371 Diffused Junction Type Silicon Diode Composite Varactor Diode for AM Receiver Low-Voltage Electronic Tuning Applications Features Package Dimensions • Excellent large-input characteristics because of dualvaractor composite type.
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EN5135A
SVC371
SVC371
SVC371]
AM receiver
513-51
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Untitled
Abstract: No abstract text available
Text: HN1V01H TO SH IBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE HN1V 0 1 H Unit in mm AM RADIO BAND TUNING APPLICATIONS 0.3 4.5 - 0.2 “ “ High Capacitance Ratio : CIV /C8V= 19.5(Typ. High Q : Q = 200 (Min.) Including Four Devices in FM8 Package (Flat Pack Mini 8Pin)
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HN1V01H
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Untitled
Abstract: No abstract text available
Text: TO SH IBA HN1V02H TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE H N1V 02 H Unit in mm AM RADIO BAND TUNING APPLICATIONS + 0.3 4.5 - 0.2 • • • • High Capacitance Ratio : C1V/C8V= 19.5 Typ. High Q : Q = 200 (Min.) Including Two Devices in FM8 Package (Flat Pack Mini 8Pin)
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HN1V02H
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Untitled
Abstract: No abstract text available
Text: TO SH IBA HN2V02H TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE HN2V02H Unit in mm AM RADIO BAND TUNING APPLICATIONS + 0.3 4.5 - 0.2 3.1 ±0 .2 □8 C'JCO to 7 to ÖÖ + 1 6 3 CHARACTERISTIC Reverse Voltage Junction Temperature Storage Temperature Range
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HN2V02H
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 1SV228 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1S V 228 Unit in ELECTRONIC TUNING APPLICATIONS OF FM RECEIVERS. mm ELECTRICAL CHARACTERISTICS Ta = 25°C CHARACTERISTIC Reverse Voltage Reverse Current Capacitance Capacitance
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1SV228
100MHz
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1SV149
Abstract: No abstract text available
Text: 1SV 149 TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V 1 49 Unit in mm AM RADIO BAND TUNING APPLICATIONS. • • • • High Capacitance Ratio : C iy /C g y = 15 Min. High Q : Q = 200 (Min.) Small Package Low Voltage Operation : 1V-8V
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1SV149
1SV149
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1SV228
Abstract: No abstract text available
Text: 1SV228 TOSHIBA 1 SV2 2 8 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm ELECTRONIC TUNING APPLICATIONS OF FM RECEIVERS. • • Low rg : rg = 0.30 Typ. Small Package 2 .5 1. 5 + - + - 0.5 0.3 0 .25 0 .15 öo + I È3- MAXIMUM RATINGS (Ta = 25°C)
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1SV228
SC-59
10juA
f-100MHz
1SV228
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1SV147
Abstract: toshiba lable
Text: SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE 1SV147 U nit in mm FM R A D IO B A N D T U N IN G A PP LIC A T IO N S . • • Low rs : rs = 0.3a Typ. Small Package M A X IM U M R ATINGS (Ta = 25°C) CHARACTERISTIC Reverse Voltage Junction Tem perature
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1SV147
10/yA
1SV147
toshiba lable
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1SV228
Abstract: No abstract text available
Text: TOSHIBA 1SV228 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 228 Unit in mm ELECTRONIC TUNING APPLICATIONS OF FM RECEIVERS. • • + 0.5 2 .5 - 0.3 + 0.25 1. 5 - 0.15 Low rs : rs = 0.30 Typ. Small Package H- M A X IM U M RATINGS (Ta = 25°C)
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1SV228
SC-59
10juA
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Untitled
Abstract: No abstract text available
Text: 1SV147 TO SHIBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V 1 47 Unit in mm FM RADIO BAND TUNING APPLICATIONS. • • Low rs : rs = 0.30 Typ. Small Package M A X IM U M RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Reverse Voltage
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1SV147
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1SV147
Abstract: toshiba lable information
Text: 1SV 147 TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V 1 47 Unit in mm FM RADIO BAND TUNING APPLICATIONS. • • Low rg : rg = 0.30 Typ. Small Package q 5 5 MAX. MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Reverse Voltage
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1SV147
1SV147
toshiba lable information
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KV1226
Abstract: KV1236Z KV1235Z KV1225 KV1236 KV1320 KV1260 KV1235 KV1310 KV1330A-2
Text: TOKO AMERICA INC D E .J cIDt>7Li32 □ 1 4 34 } VARjABLE^CAPACLTANCE^DiODES. — ' 9 0 6 7 6 3 2 T O K O A M E R I C A INC Variable Capacitance Diodes for AM KV1250 KV1260 • # KV1260-2 <* KV1230Z KV1235Z KV1234Z KV1236Z KV1225 KV1226 ♦ ■ KV1260M KV1560
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7Li32
KV1250
KV1260
KV1260-2
KV1230Z
KV1234Z
KV1235Z
KV1236Z
KV1225
KV1226
KV1226
KV1236Z
KV1235Z
KV1225
KV1236
KV1320
KV1260
KV1235
KV1310
KV1330A-2
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lm 8712
Abstract: LM 4741 1SV149
Text: SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE 1 S V 1 4 9 U n it in m m A M RADIO BAND TUNING APPLICATIONS, • H igh C apacitance Ratio : C i v / C 8V = 15 Min. • H igh Q : Q = 200 (Min.) • Sm all Package • Low V oltage O peration : 1V-8V
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1SV149
lm 8712
LM 4741
1SV149
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Untitled
Abstract: No abstract text available
Text: K n o x S e m ic o n d u c t o r , I n c . UHF HYPERABRUPT TUNING DIODES These implanted hyperabrupt varactors extend application frequencies up to 800 MHz with linear tuning capability between 3 and 8 volts. The diode capacitance ranges from 10.5 to 31 pF in support o f the higher application frequencies. Matched sets are available.
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LV2101
LV2103
C-20V
LV2I01
LV2101A
LV2802
LV2802A
LV2803
LV2803A
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