Rack PDU
Abstract: AP7998
Text: APC World Wide[ Change] HomeProducts SupportServices Selectors How to Buy Switched Rack PDU Rack PDU, Switched, Zero U,12.5kW,208V, 21 C13&(3)C19; 10' Cord AP7998 Email Technical Specifications Printer Friendly AP7998 APC Switched Rack PDU , Input: 208V 3PH ,
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AP7998
AP7998
CS8365C
Rack PDU
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33250A
Abstract: NMB-001 42Vpk UL 61010-1
Text: Agilent 33502A 2-channel 50 Vpp Isolated Amplifier Data Sheet • Full-power BW 100kHz @ 50Vpp • Small-signal BW> 300kHz • Slew Rate 20V/ s min. • THD+N < 0.01% @ 10kHz, 40Vpp. • Output drive 200mA max. • Isolation Floats ±42Vpk to earth The Agilent 33502A is a dual-channel,
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3502A
100kHz
50Vpp
300kHz
10kHz,
40Vpp.
200mA
42Vpk
33250A
NMB-001
UL 61010-1
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Untitled
Abstract: No abstract text available
Text: SCANNER-BT Hand-held Scanner for Android Mobile Devices Description For eVance Services enterprises using the Inspection Manager software, the SCANNER-BT provides all necessary scanning functions, working seamlessly with supported Android™ smart phones and tablets using
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NSL12AW
Abstract: NSL12AWT1 NSL12AWT1G
Text: NSL12AW High Current Surface Mount PNP Silicon Low VCE sat Transistor for Battery Operated Applications http://onsemi.com Features • • • • • 12 VOLTS 3.0 AMPS PNP TRANSISTOR High Current Capability (3 A) High Power Handling (Up to 650 mW) Low VCE(s) (170 mV Typical @ 1 A)
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NSL12AW
NSL12AW/D
NSL12AW
NSL12AWT1
NSL12AWT1G
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AM1011-300
Abstract: interrogator 1030 PULSED 32uS MODE-S 1030 PULSED 32uS MODE-S vcc 36
Text: AM1011-300 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTING LOW RF THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 325 W MIN. WITH 7.7 dB GAIN
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AM1011-300
AM1011-300
interrogator
1030 PULSED 32uS MODE-S
1030 PULSED 32uS MODE-S vcc 36
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Untitled
Abstract: No abstract text available
Text: MMBTA05L, MMBTA06L Driver Transistors NPN Silicon Features • S and NSV Prefix for Automotive and Other Applications Requiring • http://onsemi.com Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
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MMBTA05L,
MMBTA06L
MMBTA05L
MMBTA05LT1/D
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SMMBTA06LT1G
Abstract: SMMBTA06LT1 canada ices class b Marking 1GM MMBTA05
Text: MMBTA05L, MMBTA06L, SMMBTA06L Driver Transistors NPN Silicon http://onsemi.com Features • S Prefix for Automotive and Other Applications Requiring Unique • Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
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MMBTA05L,
MMBTA06L,
SMMBTA06L
AEC-Q101
MMBTA05LT1
MMBTA06LT1,
SMMBTA06LT1
SMMBTA06LT1G
canada ices class b
Marking 1GM
MMBTA05
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polaris
Abstract: No abstract text available
Text: Regulatory Compliance Polaris System Chassis The Polaris has been tested under the following specifications: NEBS, ETSI, FCC, UL, and CE. For full information on these tests, please call our office or visit our website. 4U Hot Swap & High Availability NEBS and ETSI Specifications
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SD1446
Abstract: arco 468 M113
Text: SD1446 RF POWER BIPOLAR TRANSISTORS UHF MOBILE APPLICATIONS FEATURES SUMMARY • 50 MHz Figure 1. Package ■ 12.5 VOLTS ■ EFFICIENCY 55% ■ COMMON EMITTER ■ GOLD METALLIZATION ■ POUT = 70 W MIN. WITH 10 dB GAIN DESCRIPTION The SD1446 is a 12.5 V Class C epitaxial silicon
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SD1446
SD1446
arco 468
M113
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Untitled
Abstract: No abstract text available
Text: Agilent N9310A RF Signal Generator 9 kHz to 3.0 GHz Data Sheet Definitions and Conditions The signal generator will meet its specifications when: • It is within its calibration cycle “Specifications” describe the performance of parameters covered by the
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N9310A
BP-3-1-13)
5990-8116EN
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transistor marking code 12W
Abstract: transistor marking code 12W 80 8w RF POWER TRANSISTOR NPN M111 15 w RF POWER TRANSISTOR NPN TRANSISTOR C 460 865 RF transistor marking code 12w INTEGRATED CIRCUIT DATE code stmicroelectronics marking 12W
Text: SD1488 RF POWER BIPOLAR TRANSISTORS UHF MOBILE APPLICATIONS FEATURES SUMMARY • 470 MHz Figure 1. Package ■ 12.5 VOLTS ■ EFFICIENCY 50% ■ COMMON EMITTER ■ POUT = 38 W MIN. WITH 5.8 dB GAIN DESCRIPTION The SD1488 is a 12.5 V Class C epitaxial silicon
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SD1488
SD1488
transistor marking code 12W
transistor marking code 12W 80
8w RF POWER TRANSISTOR NPN
M111
15 w RF POWER TRANSISTOR NPN
TRANSISTOR C 460
865 RF transistor
marking code 12w
INTEGRATED CIRCUIT DATE code stmicroelectronics
marking 12W
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motorola sps transistor
Abstract: motorola 572 transistor Motorola 1600 395C-01 sps transistor
Text: MOTOROLA Order this document by MRF16030/D SEMICONDUCTOR TECHNICAL DATA The RF Line RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. 30 WATTS, 1.6 GHz RF POWER TRANSISTOR
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MRF16030/D
MRF16030
MRF16030
DEVICEMRF16030/D
motorola sps transistor
motorola 572 transistor
Motorola 1600
395C-01
sps transistor
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IEC-1076-4-101
Abstract: gvrp 8102HA IXE5416 ZNYX Networks NetStructure PICMG 2.0 R3.0
Text: 16434_ZT8102_PB.qxd 5/23/03 10:22 AM Page 1 Product Brief Intel NetStructure ZT 8102 Switch and Intel NetStructure ZT 8102HA Switch ® ™ Product Overview The Intel® NetStructure™ ZT 8102 Switch and Intel® NetStructure™ ZT 8102HA Switch are part
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ZT8102
8102HA
14-node
0503/OC/DC/PP/500
IEC-1076-4-101
gvrp
IXE5416
ZNYX Networks
NetStructure
PICMG 2.0 R3.0
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TRANSISTOR motorola 838
Abstract: motorola diode 739 MRF16030 motorola rf Power Transistor Motorola 1600
Text: MOTOROLA Order this document by MRF16030/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF16030 NPN Silicon RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. 30 WATTS, 1.6 GHz
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MRF16030/D
MRF16030
TRANSISTOR motorola 838
motorola diode 739
MRF16030
motorola rf Power Transistor
Motorola 1600
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MARKING 3NP
Abstract: NSM80101MT1G
Text: NSM80101MT1G NPN Transistor with Dual Series Switching Diode Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com Typical Applications • LCD Control Board • High Speed Switching • High Voltage Switching
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NSM80101MT1G
NSM80101M/D
MARKING 3NP
NSM80101MT1G
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Untitled
Abstract: No abstract text available
Text: NSM80100MT1G PNP Transistor with Dual Series Switching Diode Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications http://onsemi.com • LCD Control Board • High Speed Switching • High Voltage Switching
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NSM80100MT1G
NSM80100M/D
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Untitled
Abstract: No abstract text available
Text: SD1726 THA15 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS FEATURES • OPTIMIZED FOR SSB • 30 MHz • 50 V • IMD-30 dB • COMMON EMITTER • GOLD METALLIZATION M174 epoxy sealed • POUT = 150 W PEP MIN. WITH 14 dB GAIN ORDER CODE SD1726 DESCRIPTION
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SD1726
THA15)
IMD-30
SD1726
THA15
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Untitled
Abstract: No abstract text available
Text: NSM80101MT1G NPN Transistor with Dual Series Switching Diode Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications http://onsemi.com • LCD Control Board • High Speed Switching • High Voltage Switching
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NSM80101MT1G
NSM80101M/D
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SD1446
Abstract: M113 arco 468
Text: SD1446 RF POWER BIPOLAR TRANSISTORS UHF MOBILE APPLICATIONS FEATURES SUMMARY • 50 MHz ■ Figure 1. Package 12.5 VOLTS s t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l
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SD1446
SD1446
M113
arco 468
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TH430
Abstract: SD1728 M177 TH430 D Transistor TH430 D M177 SD1728
Text: SD1728 TH430 RF & MICROWAVE TRANSISTORS HF SSB APPLICATION • OPTIMIZED FOR SSB • 30 MHz • 50 V • IMD = -30 dB • GOLD METALLIZATION • COMMON EMITTER • POUT = 250 W PEP WITH 14.5 dB GAIN M177 epoxy sealed DESCRIPTION The SD1728 is a 50 V epitaxial silicon NPN planar
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SD1728
TH430)
SD1728
TH430
TH430
SD1728 M177
TH430 D
Transistor TH430 D
M177
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NSL05TT1
Abstract: SMD310
Text: NSL05TT1 High Current Surface Mount PNP Silicon Low VCE sat Transistor for Battery Operated Applications http://onsemi.com 5 VOLTS 1.0 AMPS PNP TRANSISTOR MAXIMUM RATINGS (TA = 25°C) Rating Symbol Max Unit Collector-Emitter Voltage VCEO −5.0 Vdc Collector-Base Voltage
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NSL05TT1
NSL05TT1/D
NSL05TT1
SMD310
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Logic Level Gate Drive mosfet
Abstract: NUS5530MN 506AL NUS5530MNR2G
Text: NUS5530MN Integrated Power MOSFET with PNP Low VCE sat Switching Transistor This integrated device represents a new level of safety and board−space reduction by combining the 20 V P−Channel FET with a PNP Silicon Low VCE(sat) switching transistor. This newly integrated
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NUS5530MN
NUS5530M
Logic Level Gate Drive mosfet
NUS5530MN
506AL
NUS5530MNR2G
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NSS20300MR6T1G
Abstract: No abstract text available
Text: NSS20300MR6T1G Product Preview 20 V, 5 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These
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NSS20300MR6T1G
NSS20300MR6/D
NSS20300MR6T1G
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sps 1951 transistor
Abstract: MRF857S A 673 C2 transistor 851 MOTOROLA MOTOROLA ELECTROLYTIC CAPACITOR sps 1951 motorola rf Power Transistor transistor motorola 359 305D TL11
Text: Order this document by MRF857/D SEMICONDUCTOR TECHNICAL DATA The RF Line Designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 800 – 960 MHz. CLASS A
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MRF857/D
MRF857S
sps 1951 transistor
MRF857S
A 673 C2 transistor
851 MOTOROLA
MOTOROLA ELECTROLYTIC CAPACITOR
sps 1951
motorola rf Power Transistor
transistor motorola 359
305D
TL11
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