CAWR
Abstract: No abstract text available
Text: SN74LVC2T45-Q1 www.ti.com SCES818 – SEPTEMBER 2010 DUAL-BIT DUAL-SUPPLY BUS TRANSCEIVER WITH CONFIGURABLE VOLTAGE TRANSLATION AND 3-STATE OUTPUTS Check for Samples: SN74LVC2T45-Q1 FEATURES 1 • • • • • • • • Qualified for Automotive Applications
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SN74LVC2T45-Q1
SCES818
10-mA
24-mA
CAWR
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SN74LVC2T45QDCURQ1
Abstract: CAWR
Text: SN74LVC2T45-Q1 www.ti.com SCES818 – SEPTEMBER 2010 DUAL-BIT DUAL-SUPPLY BUS TRANSCEIVER WITH CONFIGURABLE VOLTAGE TRANSLATION AND 3-STATE OUTPUTS Check for Samples: SN74LVC2T45-Q1 FEATURES 1 • • • • • • • • Qualified for Automotive Applications
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SN74LVC2T45-Q1
SCES818
10-mA
24-mA
SN74LVC2T45QDCURQ1
CAWR
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Untitled
Abstract: No abstract text available
Text: SN74LVC2T45-Q1 www.ti.com SCES818 – SEPTEMBER 2010 DUAL-BIT DUAL-SUPPLY BUS TRANSCEIVER WITH CONFIGURABLE VOLTAGE TRANSLATION AND 3-STATE OUTPUTS Check for Samples: SN74LVC2T45-Q1 FEATURES 1 • • • • • • • • Qualified for Automotive Applications
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SN74LVC2T45-Q1
SCES818
10-mA
24-mA
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FTC 580
Abstract: alpha detector diode smd SA2 FTC 380 manual TZA1029 QFP44 TZA1020 EFM noise reduction CAWR
Text: INTEGRATED CIRCUITS DATA SHEET TZA1029 Pre-amplifier for CD-RW systems Product specification Supersedes data of 2000 Oct 30 File under Integrated Circuits, IC01 2000 Oct 31 Philips Semiconductors Product specification Pre-amplifier for CD-RW systems TZA1029
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TZA1029
753503/02/pp36
FTC 580
alpha detector
diode smd SA2
FTC 380 manual
TZA1029
QFP44
TZA1020
EFM noise reduction
CAWR
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CAWR
Abstract: No abstract text available
Text: TOSHIBA MOS MEMORY PRODUCTS T C 5 1 4 2 6 8 A P / A J / A Z - 7 0 , T C 5 1 4 2 6 8 A P / A J / A Z -80 T C 5 1 4 2 6 8 A P / A J / A Z -10 DESCRIPTION The T C 5 1 4 2 6 8 A P / A J / A Z is the n e w g e n e r a t i o n dy n a m i c R A M org a n i z e d 262,144 w o r d s by 4
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TC514268AP/AJ/AZ-70,
TCS14268AP/AJ/AZ-80
TC514268AP/AJ/AZ-10
CAWR
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CA3062
Abstract: CD40338 H5610 ic 4026b 3ssv monsanto
Text: ^ Tex a s In s t r u m e n t s CD4026B, CD4033B Types Data sheet acquired from Harris S em iconductor SCHS031 CMOS Decade Counters/Dividers High-Voltage Types <20-Volt Rating With Decoded 7-Segment Display Outputs and: Display Enable — CD4026B Ripple Blanking — CD40336
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SCHS031
CD4026B,
CD4033B
20-Volt
CD4026B
CD40336
CA3062
CD40338
H5610
ic 4026b
3ssv
monsanto
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Untitled
Abstract: No abstract text available
Text: M-*¡r 1I 1 ; a gKy*, ,R O Z Z3:0HHTiFÎGÂTI0M color — ~ :. bamd .s :- s e o i d t e _~ :& m o R m v z SIZE io ONLY =,02û'Miï£ L ¥ . % w £ lW ° • i& p m s m v . S EE MOTE .H D # . ' TSRST COLORANO TO BE. AP.PRÔX.
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11SS0
XX-36LP
JEC2i1930
t37-0S2
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Untitled
Abstract: No abstract text available
Text: PROOUCT NUMBER SEE U A E DIM A — .120 "3.05 2X DIM D - — - - 1 GUIDE PIN SHOWN mm m www % *c *m m v m i t cammmmm v n. nmtt-mt *» v n PTOOUCT NUMBER SEE TA0LC T HOUSING MATERIAL; POIYETHERIMIOE MEETS U L 9 4 - V - 0 SPECtFtCATlON. (D PW (3)
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Untitled
Abstract: No abstract text available
Text: Ipil 4,194,304 WORD x 1 BIT DYNAMIC RAM * This is advanced information and specifications are subject to change without notice. DESCRIPTION The TC514102J/Z is the new generation dynamic RAM organized 4,194,304 words by 1 bit. The TC514102J/Z utilizes TOSHIBA'S CMOS Silicon gate process technology as well
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TC514102J/Z
TC514102J/Z.
TC514102
TC514102J/Zâ
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Z80 INTERFACING TECHNIQUES
Abstract: TC514102J t-rcj
Text: i 4,194,304 WORD x 1 BIT DYNAMIC RAM * This is advanced information and specifications are subject to change without notice, DESCRIPTION The TC514102J/Z is the new generation dynamic RAM organized 4,194,304 wo r d s b y 1 The TC514102J/Z utilizes T O S H I B A ’S CMOS Silicon gate process technology as well
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TC514102J/Z
TC5141Q2J/Z
TC514102J/Z.
TC514102
TC514102J/Z-10
Z80 INTERFACING TECHNIQUES
TC514102J
t-rcj
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SHC76
Abstract: ADC71
Text: BURR-BROW N« | b b SHC76 ] SAMPLE/HOLD AMPLIFIER FEATURES D ESC R IPTIO N • FAST 6/^ max ACQUISITION TIME (14-bit) T he S H C 76 is a fast, high-accuracy hybrid sa m p le /hold circuit suitable fo r use in high-resolution d a ta acquisition systems. • COMPATIBLE WITH HIGH RESOLUTION A/0
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SHC76
14-bit)
ADC76,
PCM75,
ADC71
ADC71
14-bit
C76KG
C71KG
SHC76
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MOS MEMORY PRODUCTS THM 91002S/L-85, 10 , 12 description! The THM91002S/L is a 1,048,576 words by 9 bits dynamic RAM module which assembled 9 pcs of TC511002J on the printed circuit board. The THM91002S/L is optimized for application to the systems which are required
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91002S/L-85,
THM91002S/L
TC511002J
THM91002S/L-85
165ns
THM91002S/L-85)
THM91002S/L-10)
THM91002S/L-12)
THM91002S/L-
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24824
Abstract: CD4510 CD4516 15-V CD451 CD4510B CD4516B MC14516
Text: CD451O0, CD4516B Types CMOS Presettable Up/Down Counters High-Voltage Types 20-V o lt Rating . Features: PRESET ENABLE • Medium-speed operation fQl_ = 8 MHz typ. at 10 V C D 4 5 1 6 B -B in a ry T yp e ■ 5-V, 10-V, and 15-V parametric ratings
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20-Volt
CD4510B---BCD
CD4516B---Binary
RCA-CD4510B
CD4516
CD4510B
or10/16
CD4071B.
I7I94R5
24824
CD4510
15-V
CD451
CD4516B
MC14516
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Z80 INTERFACING TECHNIQUES
Abstract: TC514 TC514402J CAWR
Text: - ^ ~ 1,048,576 WORD x 4 BIT DYNAMIC RAM * This is advanced information and specifications are subject to change without notice. DESCRIPTION The TC514402J/Z is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The TC514402J/Z utilizes TOSHIBA’S CMOS Silicon gate process technology as well
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TC514402J/Z
TC514402J/Z.
512Kx
TC514402J/Z--80
TC514402J/Zâ
Z80 INTERFACING TECHNIQUES
TC514
TC514402J
CAWR
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Untitled
Abstract: No abstract text available
Text: H igh P erform ance 1M X 16 CM OS DRAM II A S4C 1M I6E 0 AS4LC1M16EÖ II 1 M X 1 6 CM O S EDO DRAM Preliminary information Features • Read-modify-write • TTL-compatible, three-state I/O • JEDEC standard package and pinout - 400 mil, 42-pin SOJ • 5V pow er supply 4C1M 16E0
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AS4LC1M16EÃ
42-pin
4C1M16EO-SO)
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cs11002
Abstract: tc51100a IA317 TC511002
Text: TOSHIBA MOS MEMORY PRODUCTS TC511002AP/AJ/AZ-70, TC511002AP/AJ/AZ-80 TC511002AP/AJ/AZ-10 DESCRIPTION The TC5110C2AP/AJ/AZ is the new generation dynamic RAM organized 1,048,576 words by 1 bit. The TC511002AP/AJ/AZ utilizes TOSHIBA'S CMOS Silicon gate process technology as
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TC511002AP/AJ/AZ-70,
TC511002AP/AJ/AZ-80
TC511002AP/AJ/AZ-10
TC5110C2AP/AJ/AZ
TC511002AP/AJ/AZ
/AJ/AZ-70,
TCS11002AP/AJ/AZ-80
cs11002
tc51100a
IA317
TC511002
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4C1M16
Abstract: 1MX16 4LC1M16
Text: H ig h P erfo rm a n ce 1M X 16 CMOS DRAM AS4C1 M l 6E0 AS4LC1M16E0 l M x 16 CMOS EDO DRAM Preliminary information Features • Organization: 1 ,0 4 8 ,5 7 6 words x 16 bits • H igh speed • Read-modify-write • TTL-compatibie, three-state I/O • JEDEC standard package and pinout
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1MX16
AS4LC1M16E0
42-pin
4C1M16E0)
4LC1M16E0)
6E0-50
4C1M16E0-60
6E0-70
AS4C1M16E0
4C1M16
4LC1M16
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TC514
Abstract: TC514402J toshiba tc51 TC51440 TC514402Z
Text: TOSHIBA MEMORY E lectronic C omponents B usiness S ector 1,0 4 8 ,5 7 6 W ORD X 4 BIT T C 514 4 0 2 J / Z -80 T C 51440 2 J / Z -10 DYNAMIC RAM DESCRIPTION The TC514402J/Z is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The TC514402J/Z utilizes TOSHIBA'S CMOS Silicon gate process technology as well
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TC514402J/Z-80
TC514402J/Z-10
TC514402J/Z
TC514
TC514402J
toshiba tc51
TC51440
TC514402Z
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Untitled
Abstract: No abstract text available
Text: H igh Performance 1MX16 CMOS DRAM •■ II AS4C1M16E0 AS4LC1M16E0 l M x 16 CMOS EDO DRAM Preliminary information Features • Read-modify-write • TTL-compatible, three-state I/O • JEDEC standard package and pinout - 400 mil, 42-pin SOJ • SV power supply 4C1M16E0
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1MX16
AS4C1M16E0
AS4LC1M16E0
42-pin
4C1M16E0)
4LC1M16E0)
AS4LC1M16E0
AS4LC1M16EO-70JC
42-pm
1M16E0
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SN74LS324
Abstract: IC 7447 logic SN74LS327 LS324A SN54LS327 LS326 LS327 54LS324
Text: TYPES SNS4LS324 THRU SN54LS327. SN74LS324 THRU. SN74LS327 VOLTAGE-CONTROLLED OSCILLATORS _ B U L L E T I N WO. P L -8 7613472. O C T O B E H 1876 'LS325, LS326 and LS327 Hava Two Independent VCO's In a Single Package Output Frequency Set by Single External
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SNS4LS324
SN54LS327.
SN74LS324
SN74LS327
LS325,
LS326
LS327
LS324,
IC 7447 logic
LS324A
SN54LS327
54LS324
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sam8905
Abstract: sinus oscillator digital sound generator I211 409s TDA1541 sinus wave oscillator 1S84 TDA1541 Application Notes WD0-WD11
Text: B S E D • la 7 Ì 0 4 5 7 OOOQBfifc, fa ■ ON C H IP SYSTEMS OnCliip Systems SAM8905 digital sound generator/processor for musical applications G E N E R A L DESCRIPTIO N Ths SAM8905 is a'general purpose digital sound generator/processor designed Tor audio
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a7104S?
-T-17-13Â
SAM8905
SAM8905
104S7
DDOQ43
sinus oscillator
digital sound generator
I211
409s
TDA1541
sinus wave oscillator
1S84
TDA1541 Application Notes
WD0-WD11
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3935-01
Abstract: LSE 0405
Text: H ig h P e rfo rm a n ce mm AS4C1 4 4 0 0 1M X4 II A S4C 14405 CMOS DRAM I M -bit X 4 CMOS DRAM Fast page m ode or EDO P relim in a ry in form ation Features • 1 0 2 4 re fresh cy d es, 16 m s refresh interval • O rganization: 1 ,0 4 8 ,5 7 6 w o rd s x 4 bits
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1DD344
3935-01
LSE 0405
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M5M418160
Abstract: DQ0-DQ18 M5M418160B e5as
Text: MITSUBISHI LSI* M 5 M 4 1 8 1 6 0 B J ,T P - 6 ,- 7 ,- 6 S ,- 7 S FAST PAGE MODE 16777216-BIT 1Q48576-WORD BY 16-BIT DYNAMIC RAM DESCRIPTION This is a family of 1048576-word by 16-bit dynamic RAMS, fabricated with the high performance CMOS process,and is ideal for
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16777216-BIT
1Q48576-WORD
16-BIT)
1048576-word
16-bit
1024cyc
M5M418160BJ
16-BIT
M5M418160
DQ0-DQ18
M5M418160B
e5as
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